bc640
Abstract: transistor bC640 BC640BU BC639 BC640TA BC640TAR BC640TF BC640TFR transistor c 458 bc640 pnp
Text: BC640 PNP Epitaxial Silicon Transistor BC640 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC639 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter
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BC640
BC640
BC639
transistor bC640
BC640BU
BC639
BC640TA
BC640TAR
BC640TF
BC640TFR
transistor c 458
bc640 pnp
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR BC640-16 BPL TO-92 BCE Driver Stages of Audio Amplifier Application.
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BC640-16
C-120
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SMD Marking Code 43a
Abstract: BC640 SPICE model transistor C640 to92 marking code DG SMD Transistor TRANSISTOR SMD MARKING CODE 723 BC640 smd A2 SMD CODE MARKING SOT89 TRANSISTOR SMD MARKING CODE 9339 BC640,116 TRANSISTOR SMD MARKING CODE LF
Text: BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA
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BC640;
BCP53;
BCX53
BC640
BCP53
SC-43A
SC-73
SC-62
O-243
SMD Marking Code 43a
BC640 SPICE model
transistor C640 to92
marking code DG SMD Transistor
TRANSISTOR SMD MARKING CODE 723
BC640 smd
A2 SMD CODE MARKING SOT89
TRANSISTOR SMD MARKING CODE 9339
BC640,116
TRANSISTOR SMD MARKING CODE LF
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BC640-16
Abstract: BC640
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR BC640-16 BPL TO-92 BCE Driver Stages of Audio Amplifier Application. ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )
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BC640-16
C-120
BC640-16
BC640
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bc640
Abstract: transistor bc640 transistor c 458 BC640BU BC639 BC640TA BC640TAR BC640TF BC640TFR applications of Transistor BC640
Text: BC640 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC639 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter Value Units V VCER Collector-Emitter Voltage at RBE=1KΩ
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BC640
BC639
bc640
transistor bc640
transistor c 458
BC640BU
BC639
BC640TA
BC640TAR
BC640TF
BC640TFR
applications of Transistor BC640
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BC635 ECB
Abstract: BC638
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC635 ECB
BC638
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BC636
Abstract: BC638 BC640
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC636
BC638
BC640
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BC636
Abstract: BC638 BC640
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC636
BC638
BC640
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BC636
Abstract: BC638 BC640
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC636
BC638
BC640
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NPN Silicon Epitaxial Planar Transistor to92
Abstract: BC639-BC640 Transistor BC637 or BC639 BC635 BC636 BC637 BC638 BC639 BC640 transistor C 639 W
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB
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BC635,
BC636,
640Rev
030106E
C-120
NPN Silicon Epitaxial Planar Transistor to92
BC639-BC640
Transistor BC637 or BC639
BC635
BC636
BC637
BC638
BC639
BC640
transistor C 639 W
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB
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BC635,
BC636,
640Rev
030106E
C-120
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB
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BC635,
BC636,
640Rev
180712E
C-120
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639 TRANSISTOR PNP
Abstract: 638 transistor bc636 npn transistor bc640 transistor bC640 OF CDIL transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 ts 4141 TRANSISTOR BC635
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB
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BC635,
BC636,
C-120
BC640Rev
030106E
639 TRANSISTOR PNP
638 transistor
bc636 npn transistor
bc640
transistor bC640 OF CDIL
transistor C 639 W
BC639-BC640
NPN transistor 500ma TO-92
ts 4141 TRANSISTOR
BC635
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BC635
Abstract: BC636 BC637 BC638 BC639 BC640 BC639 pin details
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 37, 39 NPN BC636, 38, 40 (PNP) TO 92 BCE Driver Stages of Audio Amplifier Application.
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BC635,
BC636,
BC635
BC636
C-120
BC635
BC636
BC637
BC638
BC639
BC640
BC639 pin details
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UPA76ha
Abstract: 2SC2291 uPA49A 2AD149 MA7809 MP2060-6 B1181MP BFX10 HA7808 2N4009
Text: MATCHED PAIRS & COMPOSITES Item Number Part Number Manufacturer V BR CEO hFE (V) Ic Max (A) fT (Hz) PD Max (W) Mati. Description Package Style NPN Monolithic Pairs, (Co nt' d) 5 10 BFY83 BFY83 BFY83 2N3517 2N3517 MD8003 UPA76HA AD813 2N4044 MP312 ~S~;:~A 15
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BFY83
2N3517
MD8003
UPA76HA
AD813
2N4044
MP312
2SC2291
uPA49A
2AD149
MA7809
MP2060-6
B1181MP
BFX10
HA7808
2N4009
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npn 8050 ecb
Abstract: 2n5401 2n3904 S8050 equivalent LB120 NPN S8550 S9011 npn M28S bc547 pnp Transistor S9013 BC558 ebc
Text: TO-92 PACKAGE MX MICROELECTRONICS ● Applied widely for AV,Fm,phones ,toys ,high&low frequency analogy amplifiers and controlers. ICBO TYPE NPN Ptot Ic VCBO VCEO ※ ICEO OR PNP ▲ mW (mA) VCES ICES VCB hFE fT PIN IC IB VCE IC *TPY (V) (mA) (MHZ) 123 100
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S9011
S9012
S9013
S9014
BC636
BC638
BC640
BF420
BF422
npn 8050 ecb
2n5401 2n3904
S8050 equivalent
LB120
NPN S8550
S9011 npn
M28S
bc547 pnp
Transistor S9013
BC558 ebc
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Untitled
Abstract: No abstract text available
Text: Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222 MPS4123 PN3643
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BF370
2N2712
2N2714
BC368
BF254
BF494
BF495
BF496
BF959
2N2924
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Untitled
Abstract: No abstract text available
Text: Bipolar Transistors Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222
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BF370
2N2712
2N2714
BC368
BF254
BF494
BF495
BF496
BF959
2N2924
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TRANSISTOR BC337 SMD
Abstract: transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139
Text: • Transistors • • • • • Small Signal Medium Power Power Darlington MOSFET CDIL Semiconductors ~ Worldwide Reach Product Profile Transistors Product Range • • Chips/Dice – Diffused Silicon Wafers Surface Mount and Leaded Semiconductor Devices
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MPSA45
P2N2369
PN2222
MPSA05
MPSA55
P2N2369A
PN2222A
MPS2907A
MPSA06
MPSA56
TRANSISTOR BC337 SMD
transistor BC170
C5198
CDIL 2N2222A Transistor
bd139 smd
bc337 SMD PACKAGE
bd140 SMD equivalent
BC109 BC184 BC549
a1941
CDIL BD139
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c640 pnp
Abstract: c 64016 C 63816 c638 Philips 64016
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 07 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A
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BC636;
BC638;
BC640
BC639.
BC636
115002/00/03/pp8
c640 pnp
c 64016
C 63816
c638
Philips 64016
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bc 148 npn transistor
Abstract: NPN transistor bc 148 bc639 BC 148 transistor BC637
Text: BC635; BC637; BC639 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 package. PNP com plem ents are BC636, BC638 and BC640. QUICK REFERENCE D A T A BC635 BC637 BC639 100 Collector-base voltage open em itter v CBO max. 45 60 Collector-emitter voltage (open base)
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BC635;
BC637;
BC639
BC636,
BC638
BC640.
BC635
BC637
BC639
bc 148 npn transistor
NPN transistor bc 148
BC 148 transistor
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bc639
Abstract: bc640 transistor BC637 complement BC635 BC635-10 BC636 BC637 BC637-10 BC638 BC639-10
Text: T> m N AUER PHILIPS/DISCRETE ^53^31 □□EVS'ìD T?^ B A P X A BC635; BC637; BC639 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 envelope, prim arily intended fo r use in driver stages o f audio amplifiers. P-N-P complements are BC636, BC638 and BC640.
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BC635;
BC637;
BC639
BC636,
BC638
BC640.
BC635
BC637
bc639
bc640
transistor BC637 complement
BC635-10
BC636
BC637-10
BC639-10
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ecb transistors
Abstract: BC635 ECB P2N2907 P2N2222 P2N2222A CBE BF423 CBE BF422 CBE BC368 BC369 BC636
Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued Central Collector 800 MW TO-92 The transistors listed in th is table have been designed to provide power dissipation. These devices are listed in order of decreasing breakdown voltage (BVCEO). — Device Type
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BF420
BF422
BC639
BC637
BC635
BC368
BF421
BF423
BC640
P2N2222
ecb transistors
BC635 ECB
P2N2907
P2N2222
P2N2222A CBE
BF423 CBE
BF422 CBE
BC369
BC636
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63516
Abstract: 635-16 63916 Bc 649
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 12 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A
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BC635;
BC637;
BC639
BC636,
BC640.
BC635
115002/00/03/pp8
63516
635-16
63916
Bc 649
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