BC636 TRANSISTOR Search Results

BC635

Abstract: BC636 BC636-AP
Contextual Info: BC636 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC636 BC636 TO-92 / Bulk BC636-AP BC636 TO-92 • ■ ■ / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY

bc640

Abstract: bc636 bc638
Contextual Info: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 1 EMITTER Vdc –45 –60

BC640

Abstract: bc636 Diode bc640 BC636-16 BC636ZL1 BC638 BC638ZL1 BC640-16 BC640ZL1
Contextual Info: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC636 BC638 BC640 Collector-Base Voltage VCBO BC636 BC638 BC640 Emitter-Base Voltage

bc640

Abstract: BC638 BC636
Contextual Info: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 Emitter-Base Voltage VCEO VCBO Value

24825

Abstract: BC639 BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC640
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640

transistor BC636

Abstract: BC635 BC636 BC636BU BC636TA BC636TAR BC636TF BC636TFR
Contextual Info: BC636 PNP Epitaxial Silicon Transistor BC636 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC635 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter

BC640

Abstract: BC636 BC635 BC636-10 BC636-16 BC637 BC638 BC639 SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 2001 Oct 10 2004 Oct 11 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640

bc640

Abstract: BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC639 BC635 TRANSISTOR E C B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1997 Mar 07 1999 Apr 23 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640

BC640

Abstract: bc636 bc638 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP
Contextual Info: BC636/BC638/BC640 Transistor PNP TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features — High current transistors MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value Units -45 BC636

BC636

Abstract: BC638 BC640
Contextual Info: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

BC635 ECB

Abstract: BC638
Contextual Info: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 1 EMITTER M AXIMUM RATINGS Rating Symbol BC636 BC638 BC640 Unit Collector-Emitter Voltage VCEO -45 -60 -80 Vdc Collector-Base Voltage VCBO —45 -60 -8 0

bc638 equivalent

Abstract: bc640 equivalent bc636
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol BC636 BC638 BC640 Unit Collector – Emitter Voltage VCEO –45 –60 –80 Vdc Collector – Base Voltage

BC640

Abstract: BC639-BC640 BC636 C637 BC635 BC638 BC637 BC639 BC635BC636
Contextual Info: COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors T0-92 for AF driver stages and amplifier applications up to 1A. BC6351 BC636 45V iC(max) IBC637 BC638 60V 1A 1.5A

BC636

Abstract: BC638 BC640
Contextual Info: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

BC636

Abstract: BC638 BC640
Contextual Info: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

BC638

Abstract: bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola
Contextual Info: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80

bc638 motorola

Contextual Info: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80

bc640

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 1 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage Symbol BC636 BC638 BC640 -6 0 -6 0 Vdc -8 0 Vdc VCEO -4 5 C ollector-B ase Voltage VCBO -4 5

Bc636

Abstract: BC640 639 TRANSISTOR PNP BC638 pnp bc636 transistor
Contextual Info: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • C o m p le m e n t to BC635/637/639 ABSOLUTE MAXIMUM RATINGS Ta= 25°C 1 Sym bol Characteristic C o llecto r Emitter Voltage: BC636 a t R BE = 1Kohm : BC638 V cE R : BC640

bc640c

Abstract: BC639 BC638
Contextual Info: BC636; BC638; BC640 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 package. amplifiers. N-P-N complements are BC635, BC637 and BC639. Q U IC K R EF E R E N C E D A T A BC636 Collector-base voltage open emitter Collector-emitter voltage (open base)

bc640c

Contextual Info: BC636 BC638 BC640 M A X IM U M RATINGS Symbol BC636 BC638 BC640 Unit Collector-Emitter Voltage Rating v CEO -4 5 -6 0 -8 0 Vdc Collector-Base Voltage v CBO -4 5 -6 0 -8 0 Vdc Emitter-Base Voltage v EBO -5 .0 Collector Current — Continuous >C -0 .5 Ade Total Device Dissipation

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR "" TECHNICAL DATA BC636 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS * Complement to Bc635 Characteristic Collector-Emitter Voltage atRfiE=lKL! Collector-Emitter Voltage Collector-Emitter Voltage

bc640

Abstract: st bc638 BC635 application note bc638-10 BC635 BC636 BC636-10 BC637 BC638 BC639
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 07 Philips Semiconductors Product specification