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    BC636 NPN TRANSISTOR Search Results

    BC636 NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    BC636 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BC635

    Abstract: BC636 BC637 BC638 BC639 BC640 BC639 pin details
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 37, 39 NPN BC636, 38, 40 (PNP) TO 92 BCE Driver Stages of Audio Amplifier Application.


    Original     		BC635, BC636, BC635 BC636 C-120 BC635 BC636 BC637 BC638 BC639 BC640 BC639 pin details PDF

    bc736

    Abstract: BC635 BC637 BC639
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc736 BC635 BC637 BC639 PDF

    c63610

    Abstract: transistor C636 BC635 BC636 BC636-10 BCP51 BCP54 BCX51 BCX54 SC-43A
    Text: BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA


    Original     		BC636; BCP51; BCX51 BC636 SC-43A BC635 BCP51 OT223 SC-73 BCP54 c63610 transistor C636 BC635 BC636-10 BCP51 BCP54 BCX51 BCX54 SC-43A PDF

    Untitled

    Abstract: No abstract text available
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		BC635/637/639 BC636/638/640 BC635 BC637 BC639 PDF

    transistor bC640 OF CDIL

    Abstract: BC639 bc639 npn BC635 TRANSISTOR E C B BC635 BC636 BC637 BC638 BC640 NPN, PNP for 500ma, 30v
    Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC635 BC637 BC639 NPN BC636 BC638 BC640 PNP TO-92 Plastic Package E CB Driver Stages of Audio Amplifiers Applications


    Original     		QSC/L-000019 BC635 BC637 BC639 BC636 BC638 BC640 BC636, BC638, transistor bC640 OF CDIL BC639 bc639 npn BC635 TRANSISTOR E C B BC635 BC636 BC637 BC638 BC640 NPN, PNP for 500ma, 30v PDF

    c63610

    Abstract: transistor C636 BC635 BC636 BC636-10 BCP51 BCP54 BCX51 BCX54 SC-43A
    Text: BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors Rev. 07 — 29 June 2007 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA


    Original     		BC636; BCP51; BCX51 BC636 SC-43A BC635 BCP51 OT223 SC-73 BCP54 c63610 transistor C636 BC635 BC636-10 BCP51 BCP54 BCX51 BCX54 SC-43A PDF

    bc736

    Abstract: bc635 BC637 BC639
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc736 bc635 BC637 BC639 PDF

    NPN transistor ECB TO-92

    Abstract: Bc637 BC635 ECB transistor C 639 W transistor BC637 complement
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		BC635/637/639 BC636/638/640 BC635 BC637 BC639 NPN transistor ECB TO-92 Bc637 BC635 ECB transistor C 639 W transistor BC637 complement PDF

    bc639

    Abstract: 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		BC635/637/639 BC636/638/640 BC635 BC637 BC639 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild PDF

    transistor C 639 W

    Abstract: No abstract text available
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		BC635/637/639 BC636/638/640 BC635 BC637 BC639 transistor C 639 W PDF

    bc635

    Abstract: transistor C 639 W
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc635 transistor C 639 W PDF

    BC635

    Abstract: bc639 BC637
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		BC635/637/639 BC636/638/640 BC635 BC637 BC639 BC635 bc639 BC637 PDF

    c63610

    Abstract: bc636 BCX51 c636 philips
    Text: BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors Rev. 06 — 29 March 2006 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1: Product overview Type number [1] Package NPN complement Philips


    Original     		BC636; BCP51; BCX51 BC636 BCP51 SC-43A SC-73 SC-62 O-243 c63610 bc636 BCX51 c636 philips PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB


    Original     		BC635, BC636, 640Rev 030106E C-120 PDF

    NPN Silicon Epitaxial Planar Transistor to92

    Abstract: BC639-BC640 Transistor BC637 or BC639 BC635 BC636 BC637 BC638 BC639 BC640 transistor C 639 W
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB


    Original     		BC635, BC636, 640Rev 030106E C-120 NPN Silicon Epitaxial Planar Transistor to92 BC639-BC640 Transistor BC637 or BC639 BC635 BC636 BC637 BC638 BC639 BC640 transistor C 639 W PDF

    CTBC 635

    Abstract: 635-16 TBC635-16 TBC635 63516 cbc635 BC635 TRANSISTOR E C B BC635 BC635-10 BC635-16
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC635 9AC TBC635 (Tin Finish Part) LEAD FREE TO-92 Plastic Package E CB High Current Transistor Complementary BC636 ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)


    Original     		BC635 TBC635 BC636 C-120 TBC635Rev020505E CTBC 635 635-16 TBC635-16 TBC635 63516 cbc635 BC635 TRANSISTOR E C B BC635 BC635-10 BC635-16 PDF

    639 TRANSISTOR PNP

    Abstract: 638 transistor bc636 npn transistor bc640 transistor bC640 OF CDIL transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 ts 4141 TRANSISTOR BC635
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB


    Original     		BC635, BC636, C-120 BC640Rev 030106E 639 TRANSISTOR PNP 638 transistor bc636 npn transistor bc640 transistor bC640 OF CDIL transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 ts 4141 TRANSISTOR BC635 PDF

    BC635

    Abstract: BC636 BC636-AP
    Text: BC636 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC636 BC636 TO-92 / Bulk BC636-AP BC636 TO-92 • ■ ■ / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY


    Original     		BC636 BC636-AP BC635 BC635 BC636 BC636-AP PDF

    BC640

    Abstract: BC639-BC640 BC636 C637 BC635 BC638 BC637 BC639 BC635BC636
    Text: COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors T0-92 for AF driver stages and amplifier applications up to 1A. BC6351 BC636 45V iC(max) IBC637 BC638 60V 1A 1.5A


    OCR Scan     		BC635 BC640 BC635, BC637, BC639 BC636, BC638, BC640 BC636 BC639-BC640 BC636 C637 BC638 BC637 BC639 BC635BC636 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC635 THRU’ BC640 COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors for AF driver stages and amplifier applications up to 1A. ‘ TO-92 L Collector-Emitter Voltage


    OCR Scan     		BC635, BC637, BC639 BC636, BC638, BC640 3C637 BC638 PDF

    BC838

    Abstract: BC640 bc636 npn transistor BC63 transistor BC639 BC635 BC636 BC637 BC638 BC639
    Text: B C 6 3 5 THRU’ B C 6 4 0 ÏA COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors ‘ TO-92 for AF driver stages and amplifier applications up to 1A. ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		BC635, BC637, BC639 BC636, BC638, BC640 BC635 T0-92 BC838 BC640 bc636 npn transistor BC63 transistor BC639 BC636 BC637 BC638 BC639 PDF

    bc638

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Audio and video amplifiers.


    OCR Scan     		BC636; BC638; BC640 BC635, BC637 BC639. BC636 BC638 BC640 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b'lE ]> • bbS3R31 □QSTS'lb Ml? « A P X BC636; BC638; BC640 A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, primarily intended fo r use in driver stages of audio amplifiers. N-P-N complements are BC635, BC637 and BC639.


    OCR Scan     		bbS3R31 BC636; BC638; BC640 BC635, BC637 BC639. BC636 BC638 PDF

    7Z104

    Abstract: BC635 BC636 BC636-10 BC637 BC638 BC638-10 BC639 BC640 BC640-10
    Text: BC636; BC638; BC640 PHILIPS INTERNA T IO NA L SbE » 711D Ö2L 0042QSÖ 013 BI P H I N SILICON PLANAR EPITAXIAL TRANSISTORS T - 2 ^ - 2 P'N P transistors in a plastic TO-92 envelope, prim arily intended fo r use in driver stages of audio amplifiers. N-P-N complements are BC635, BC637 and BC639.


    OCR Scan     		BC635, BC637 BC639. BC636 BC638 BC640 7Z104 BC635 BC636-10 BC638-10 BC639 BC640 BC640-10 PDF