BC317 TRANSISTOR Search Results

BC317

Abstract: transistor BC317 BC317B BC317 transistor BC317A BC317B equivalent bc 357 transistor
Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic Package E BC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic Package E BC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL

BC317 transistor

Abstract: transistor BC317 BC317 BC317A BC317B bc 357 transistor pin
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic Package E BC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL

BC519

Abstract: fbc237 BC317 BC167 bc107-108-109 BC313 BC320 BC107 BC237 complementary BC238
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

BC238 h parameter

Abstract: bc313 BC167 BC231 BC317 BC107 bc101 BC168 BC320 30Hz-15kHz
Contextual Info: CRO BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

BC167

Abstract: BC107 CE amplifier BC1O7 BC237 complementary hFE Group BC169 bc107 bc168
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 CRO THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

bc1078

Abstract: BC317 BC167 BC1O7 BCI69 BC168 bc108 cbe BC257 bc2378 T0-92A
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.

BC177

Abstract: BC257 BC520 bc1778 bc258 BC317 BC321 BC320 bc3078 BC107
Contextual Info: BC177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 KmmoGtgfimoMNHwoMMwmNwmNmomMMwmmmoooHMígetMemmm^^ THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9.

SE4021

Abstract: BC207B 2N4248 2N4249 BC207 pnp BC521 BC207 BC526 BC204 EN3962
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING V q eq (Cont’d) DEVIC EN O . Pola rity PNP Item NPN VCEO V Min 1 PN4250 40 a 2N4248 40 3 hFE hFE @ >c mA Mln/Max 250/700 50/- @ ic mA NF dB Max @f kHz NF dB Max

BC337-16-5

Abstract: BC207 BC208B BC209C BC237 BC237A BC237B BC237C BC238 BC238B
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. V EBO *CBO ^CB (V) (W) (|iA) @ (V) Min 8Tc=25°c 0.625 45 BC207 50 BC208B 25 (A) 0.015 @ ^CE(SAT) (mA) 0 (V ) Min Max Max 0.1

Bc23b

Abstract: BC207 BC337-16-5 BC237-5 BC320 BC208B BC209C BC237 BC237A BC237B
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. V EBO *CBO ^CB (V) (W) (|iA) @ (V) Min 8Tc=25°c 0.625 45 BC207 50 BC208B 25 (A) 0.015 @ ^CE(SAT) (mA) 0 (V ) Min Max Max 0.1

transistor Comparison Tables

Abstract: pin configuration npn transistor BC557 BC647 BC548 or BC558B TRANSISTOR To92 transistor motorola BC647B BC319 BC182 BC547 pin configuration NPN transistor BC548B pin configuration NPN transistor BC548
Contextual Info: Plastic-Encapsulated Small-Signal Transistors CASE 29-02 CASE 29-03 TO-92 M o to ro la ’s sm all-sig na l TO-92 p la stic tra n s is to rs encom ­ pass hundreds of d evices w ith a w id e v a rie ty of ch a ra cte ristics fo r gen eral purpose, a m p lifie r and s w itc h ­

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BC207 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min Pd 'c (W) W @Tc=25°c SO 45 5 0.625 0.1 ‘CBO V CB w ï(V ) Max 'c e s m ^ce

BC319B

Abstract: BF337 BC115 BC114 BC207 BC113 BC207A BC207b fairchild semiconductors BC208
Contextual Info: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors NPN Low Level, Low Noise Amplifier Transistors Plastic Package T092, T O IM REFERENCE T A B LE M a x R a tin g s Co d e Vceo V o lts Ptot T a — 25*C M in mW C h a r a c te r is tic s @

Contextual Info: TO-92 Plastic Package Transistors NPN Ele ctrical C h a ra c t e ris t ic s (Ta -25 C M a x im u m R a tin g s Type No. BC238B BC238C BC239 BC239B BC239C ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min $30 25 5 $30 $ 0 $30 $30 25 25 25 25 5 5 5 5 Pd 'c (W) (A) @Tc=25“c

bc322

Contextual Info: , One. BC177,8,9 BC257,8,9 .BC307,8,9 BC320,1,2 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS,

C184L

Abstract: BC184LC
Contextual Info: AL LE GR O MICROSYSTEMS INC =53 8 5 1 4 0 1 9 SPRA GU E. D • G50433Ö 0 0 0 3 5 T 3 T ■ ALGR S E M I C O N D S / ICS 93D 03593 J PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘D’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C V) (V) (V)

BC257

Abstract: BC320 BC107 transistor BC257 BO307 BC237 BC317 YC 322 BC177 BC178
Contextual Info: CRO BC177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9. BC257, 8, 9 are complementary to BC167, 8, 9.

Contextual Info: S P RAG UE /S EM IC ON D GROUP =13 8 5 1 40 19 SPRAGUE. ÔS13ÔSD D DOOBSTB S E M I C O N D S / ICS Q 93D 03593 J /7~ T - 3 - 1 - ¿io PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘D’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C *CBO Device

bc177

Abstract: BC257
Contextual Info: CRO BC177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9. BC257, 8, 9 are complementary to BC167, 8, 9.

bc207

Abstract: ME1120 bc208 BC209 BC113 BC207b BC209C BC107B fairchild BC207A BC209B
Contextual Info: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors N P N Low Level, Low Noise Amplifier Transistors Plastic Package T092, T O IM REFERENCE TABLE Max Ratings Code BC113 BC114 BC115 BC207 BC207A BC207B BC203 BC208A BC20IB BC209 BC209B

110 3cg motorola

Abstract: pin configuration transistor 110 3CG BC647 110 3CG transistor 110 3CG bc459c pin configuration transistor BC549 transistor bc237 - bc337 bc459 pin configuration NPN transistor BC560
Contextual Info: Plastic-Encapsulated Small-Signal Transistors CASE 29-02 CASE 29-03 TO-92 M o to r o la ’s s m a ll-s ig n a l T O -9 2 p la s tic tra n s is to rs e n c o m ­ p ass h u n d re d s of d e v ic e s w ith a w id e v a rie ty of c h a ra c te ris tic s fo r g e n e ra l p u rp o s e , a m p lifie r a n d s w itc h ­

BC207b

Abstract: BC113 SGS BC208A BC209B BC207A BF257 BC113 BC114 BC209 BC208 transistor
Contextual Info: Fairchild Sem iconductors Semiconductors Silicon Small Signal Transistors NPN Low Level, Low Noise Amplifier Transistors P lastic P ack ag e T 0 9 2 , T O IM REFERENCE TABLE Max Ratings Characteristics @ 25‘ C Code V c e o Pt o t Volts T a — 25*C mW

AT3904

Abstract: raytheon transistor AT3866A BC177 pnp transistor AT915 Raytheon AT3906 transistor eb 2030 AT720 AT918 at3209
Contextual Info: RAYTHEON/ SEMICONDUCTOR 27E D • 7S^73bD DQDTBbT Raytheon Company Semiconductor Division S ■ 7^27-9*? Raytheon Transistor Dice Catalog I RAYTHEON/ SEMICONDUCTOR 27E D ■ TSTVBbO 0007370 1 ■ J-S7- 11 Features Shipping Formats ■ Wafer size 2'A inches, 3 inches