BC300 TRANSISTOR Search Results

BC301

Abstract: bc500 BC300
Contextual Info: BC300 BC301 BC302 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES i CASE TO-39 THE BC300, BC301, BC302 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICAT­ IONS UP TO 1 AMPERE. THEY ABE COMPLEMENTARY TO

BC301

Abstract: BC300 bc302 BC300-BC301-BC302 BC301-BC302
Contextual Info: BC300 BC301-BC302 MEDIUM POWER AUDIO DRIVERS DESCRIPTION The BC300, BC301 and BC302 are silicon planar epitaxial NPN transistors in TO-39 metal case.They are intended for audio driver stages in commercial and industrial equipments. In addition they are useful as high speed saturated switches and general

BC301

Abstract: bc500 BC302 BC300 BC303 BC304 VCB-60V BC301-BC302 BC300-BC301-BC302
Contextual Info: BC300 BC302 BC301 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES CASE TO-39 THE BC300, BC301, BC302 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICAT­ IONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO

Contextual Info: 30E » • 7^5^537 "TV^Pl-23- 00306=11 1 ■ r z 7 SGS-THOMSON S G BC300 BC301-BC302 S -TH 0M S 0N MEDIUM POWER AUDIO DRIVERS DESCRIPTION The BC300, BC301 and BC302 are silicon planar epitaxial NPN transistors in TO-39 metal case.They are intended for audio driver stages in commercial

sth 39 d

Abstract: bc300
Contextual Info: r Z 7 SGS-THOMSON ^ 7 # raramiera « ® BC300 BC301-BC302 MEDIUM POWER AUDIO DRIVERS D E S C R IP T IO N The BC300, BC301 and BC302 are silicon planar epitaxial NPN transistors in TO-39 metal case.They are intended for audio driver stages in commercial and industrial equipments. In addition they are use­

BC300

Abstract: bc301
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTORS BC300, BC301, BC302 TO-39 Metal Can Package NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

bc500

Abstract: bc301 BC302 BC300 BC303 BC304 BOX69477 "Medium Power Amplifiers" BC301-BC302
Contextual Info: BC300 BC301 BC302 KPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES i CASE TO-39 THE BCJOO, BC301, BC302 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICAT­ IONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO

BC300

Abstract: BC301 BC302 BC301-BC302
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN EPITAXIAL PLANAR SILICON TRANSISTORS BC300, BC301, BC302 TO-39 Metal Can Package NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

BC300

Abstract: bc301 BC302
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTORS BC300, BC301, BC302 TO-39 Metal Can Package NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

BC301

Abstract: BC302 BC300 BC303 BC304 BOX69477 VCB-60V BC301-BC302
Contextual Info: BC300 BC301 BC302 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES CASE TO-39 THE BCJOO, BC301, BC302 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AP DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICAT­ IONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO

SGS-ATES c426

Abstract: ME6002 BFR97 SGS-Ates BC125 sgs-ates transistors ME6101 sgs c426 BC142 BC300
Contextual Info: M icro- Electronics Sem iconductors NPN Transistors N P N Medium Power Transistors R EFER EN C E T A B L E C426 30 BC125 BC142 BC300 min. 15 a l c mA (Ok I c fT Cob pF 150 40 25 19578D 66 150 40 200 150 40 120 25 12 — 76 67 0.5 150 120 — 19480B 19491G

C744

Abstract: BC301-6 cp409 SGS-ATES c426 BFY72 sgs c426 Transistor 2N3866 BC119 sgs-ates BFR97
Contextual Info: S G S -A T E S Semiconductors Transistors -N P N N P N Medium Po w er Transistors R EFEREN CE T A B L E 0.8 6* 6* «* 3* o u_ C ode BC119 BC300 BC301 BC302 BFR36 M ax P tot @ T * m b = 25 -C W 30 80 60 45 30 Max lc (A ) 1 7 7 7 0.3 @ lc (m A ) Min fr (MHz)

bc500

Abstract: bc300
Contextual Info: V * B C 300 BC301 BC302 KPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES J CASE TO-39 THE BC JOO, BC301, BC302 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICAT­ IONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO

bc303

Contextual Info: BC303 B C 304 PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 CASE $0-39 TEE BC303, BC304 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS RECOMMENDED FOR AF DRIVERS & OUTPUTS, AS WELL A3 FOR SWITCHING- APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE NPN TYPE

2N3742

Abstract: bc140 Bc300 BC300-5 2N3678 2N4237 2N4926 2N5320 2N5321 2N5681
Contextual Info: TO-39 Metal-Can Package Transistors NPN Maximum Ratings Type No. 2N3678 Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) ^cao ^CEO ^EBO (V) (V) (V) Pd (W) Min Min Min @Tc=25°c 75 55 6 0.8 'c 'cm (A) (A) 'c 8 0 W ^CB 'ces ^CE e (V) (ma)

2n2222 itt

Abstract: BSY86 ME6002 ME6102 BFY72 MA8003 fairchild semiconductors 2n2222 micro electronics ME8003 BFY50
Contextual Info: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N PN Silicon High Speed Saturated Switching Transistors M etal Can T O IS REFERENCE T A B LE For medium speed - see General Purpose S ection. C H A R A C TE R IS TIC S @ 25"C

Contextual Info: TO-39 Metal-Can Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) ^CBO ^C E O ^EBO PD Min (V) Min (V) Min (W) 0Tc=25°c 75 55 6 0.8 m 2N3678 'c (A) 0.8 *CM (A) ^CBO (PA) Max 0.01 VC8 *CES e (V)

2n5859 equivalent

Abstract: BFW16A bc140 BD115 2N5859 2N6190 2N6191 2N6192 2N6193 BC141
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO @ µA) (µ VCB (V) *ICEO *ICES *ICEV *ICER hFE @ IC @ VCE VCE (SAT) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) ton (ns) toff (ns) (dB) *TYP *TYP

2N5859

Abstract: 2N5784 2N5785 2N5786 2N5861 2N6190 2N6191 2N6192 2N6193 BC140
Contextual Info: Small Signal Transistors TO-39 Case Continued T Y PE NO. DESCRIPTION VC BO h :E @ I C @ VC E VCE(SA T) lc (roA) (MHz) <mA) (V) (V) C0 b *TYP NF *off (ns) (dB) *TYP *TYP *TYP *TYP MIN MIN MIN *'C EO *'C E S *ICEV *'CER MIN M AX MIN MAX M AX M AX

2n5861

Abstract: 2n5859 equivalent 2N5859 BD115 BF178 2N5784 2N5785 2N5786 2N6190 2N6191
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO VCEO (V) (V) VEBO (V) *VCER ICBO @ (mA) VCB (V) hFE @ IC @ VCE VCE (SAT) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) ton (ns) toff (ns) (dB) *TYP *TYP †TYP *TYP *TYP *TYP *ICEO *ICES

2N3055

Abstract: 2N3055H BDY25C bu103a 2n2243 transistor U3158 transistor BUX22 bu102 TRANSISTOR BSW68A Transistor BFX79
Contextual Info: Illl iF ti mi Semelab Mil / Aerospace Division NATO LISTED TRANSISTO R PRO D UCT Semelab is listed and supplies transistors for use in NATO military systems. Semelab’s CAGE number is U3158. Below is a SELECTION from the 740 device types listed. NATO NUMBER

bfr36

Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO m h|*E v CEO v EBO ! c b o v CBO (V) (V) m VeSBM T)*C m («A» • *c mt (V) ’teE O *VCER NF ♦r (MU*} <PF) ton <*) *off (n*) (dB) •TYP *TYP *TYP TYP -TYP MM MAX MAX MAX MAX

BC118

Abstract: BC125 ME6002 fairchild semiconductors fairchild to-106 ME6101 bc142 BFY72 BC537 BC537-10
Contextual Info: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors N P N General Purpose A m plifier and Sw itching Transistors P la s tic P a c k a g e T O 92, T O 105, T O 106 REFERENCE T A B L E See a lso lo w level and h ig h vo lta g e s e c tio n .

2N5859

Abstract: 2N6191 2N5784 2N5785 2N5786 2N5861 2N6190 2N6192 2N6193 BC140
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO VCEO (V) (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) ton (ns) toff (ns) (dB) *TYP *TYP †TYP *TYP *TYP *TYP MAX *ICEO *ICES