BC237A TRANSISTOR Search Results

Contextual Info: BC237A Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).60 @I(C) (A) (Test Condition)100m

Transistor BC239c

Abstract: BC239 BC237B TRANSISTOR BC237a BC237 BC238 datasheet transistor bc237 bc337 transistor bc238 BC237A BC238
Contextual Info: BC237.239 NPN Silicon Amplifier Transistors The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations TO-92 Plastic Package Weight approx. 0.19g

BC237

Abstract: 238B transistor 238B BC238 bc237b TRANSISTOR bc237b BC237A transistor TRANSISTOR bc237c BC238 DATASHEET transistor bc237 bc337
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC237/238/239 TRANSISTOR NPN TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR 2. BASE 3. EMITTER 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

238b

Abstract: BC238 transistor 238B BC239 BC238 NPN transistor bc237b transistor bc237 bc337 transistor bc239C BC239C BC237
Contextual Info: BC237.239 NPN Silicon Amplifier Transistors The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations TO-92 Plastic Package Weight approx. 0.19g

BC237B

Abstract: transistor 238B TRANSISTOR bc237c BC237 238C BC237A transistor TRANSISTOR BC237b transistor bc237 bc337 BC238 238B
Contextual Info: BC237/238/239 BC237/238/239 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.35 W (Tamb=25℃) 1. COLLECTOR 0.1 A 2. BASE 3. EMITTER BC237 50V BC238/239 30V Operating and storage junction temperature range

transistor 238B

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC237/238/239 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. COLLECTOR PCM: 0.35 W (Tamb=25℃) 2. BASE Collector current ICM: Collector-base voltage V(BR)CBO: 0.1

bc238

Contextual Info: TO-92 Plastic-Encapsulate Transistors BC237/238/239 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. COLLECTOR PCM: 0.35 W (Tamb=25℃) 2. BASE Collector current ICM: Collector-base voltage V(BR)CBO: 0.1 3. EMITTER A BC237 50V BC238/239 30V Operating and storage junction temperature range

bc237

Abstract: BC237B bc238 bc237a bc237c bc239 238B 238c
Contextual Info: BC237/238/239 NPN TO-92 Bipolar Transistors 1. COLLECTOR TO-92 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCEO VEBO Parameter Value BC237 45 BC238/239 25 Collector-Emitter Voltage

BC237

Abstract: BC238 bc237b 238C BC237A TRANSISTOR bc237c transistor bc237 TRANSISTOR bc237b BC239
Contextual Info: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC237/238/239 TRANSISTOR NPN TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR 2. BASE 3. EMITTER 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

bc237v

Abstract: bc238 BC237
Contextual Info: ON Semiconductort BC237,A,B,C BC238B,C BC239C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector–Emitter Voltage VCEO 45 25 25 Vdc Collector–Emitter Voltage VCES 50 30 30 Vdc Emitter–Base Voltage VEBO 6.0

BC238BC

Abstract: bc237a BC238B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors BC237,A,B,C BC238B,C BC239,C NPN Silicon EMITTER MAXIMUM RATINGS Symbol BC237 BC238 BC239 Unit C ollector-E m itter Voltage VCEO 45 25 25 Vdc C ollector-E m itter Voltage VCES 50 30 30 Vdc V EBO

BC237

Abstract: bc238 BC239C BC238B bc237v
Contextual Info: ON Semiconductort BC237,A,B,C BC238B,C BC239C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector −Emitter Voltage VCEO 45 25 25 Vdc Collector −Emitter Voltage VCES 50 30 30 Vdc Emitter −Base Voltage VEBO

BC239C

Abstract: BC237 BC238B DATASHEET Transistor BC239c 238b BC238 datasheet BC239C equivalent BC237A BC238 BC239
Contextual Info: ON Semiconductort BC237,A,B,C BC238B,C BC239C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector–Emitter Voltage VCEO 45 25 25 Vdc Collector–Emitter Voltage VCES 50 30 30 Vdc Emitter–Base Voltage VEBO 6.0

BC237

Abstract: BC238B BC238 datasheet BC238B npn Bc238B, NPN BC239 NPN transistor download datasheet BC237A BC238 BC239 BC237B/2388/2398
Contextual Info: BC237,A,B,C BC238B,C BC239,C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector–Emitter Voltage VCEO 45 25 25 Vdc Collector–Emitter Voltage VCES 50 30 30 Vdc Emitter–Base Voltage VEBO 6.0 5.0 5.0 Vdc Collector Current — Continuous

BC 2388

Abstract: BC739 BC236 BC237B 239b BC237A BC231 bc2376 06008v BC238
Contextual Info: ^ BC237 BC238 BC239 OßtCf MAXIMUM RATINGS R*l»r»V Symbol Collector-Emitter Voltage BC BC BC 237 231 239 Unit v e to 45 25 25 Vdc Collector Emitter Voltage VCfS 50 30 30 Vdc £»ni»t<r-8i*e Voltage v i9 0 6 0 SO 5.0 Vdc Collector Current - Continuous 100

BC238B

Abstract: BC239 BC237A BC238 BC237 bc237v
Contextual Info: MOTOROLA Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors BC237,A,B,C BC238B,C BC239,C NPN Silicon COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol BC 237 BC 238 BC 239 Unit VCEO 45 25 25

TRANSISTOR 237b

Abstract: BC237 237B TRANSISTOR BC237CTA BC238 bc237a 2bc237
Contextual Info: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter

Contextual Info: BC237,A,B,C BC238,B,C BC239,C M AXIM U M R A T IN G S R atin g Sym b ol BC BC BC 2 3 7 2 3 8 2 39 Unit Collector-Em itter Voltage VCEO 45 25 25 Vdc Collector-Em itter Voltage VCES 50 30 30 Vdc Em itter-Base Voltage vebo 6.0 5.0 5.0 Vdc Collector Current - Continuous

BC337-16-5

Abstract: BC207 BC208B BC209C BC237 BC237A BC237B BC237C BC238 BC238B
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. V EBO *CBO ^CB (V) (W) (|iA) @ (V) Min 8Tc=25°c 0.625 45 BC207 50 BC208B 25 (A) 0.015 @ ^CE(SAT) (mA) 0 (V ) Min Max Max 0.1

BC183A

Contextual Info: TO-92 Plastic Package Transistors NPN Electrical C haracteristics IT;) -.2 5 C. Unless O therw ise S pecified) Maxim um Ratings i I i ! ^ HI ^EBO (V) Min (V) Min (V) Min 60 50 6 #BC182 ^CBO Pd (W) (A) @Tc=25'c 0.35 0.1 (pA) Max 0.015 V C!I @ 00 *CES (pA)

Bc23b

Abstract: BC207 BC337-16-5 BC237-5 BC320 BC208B BC209C BC237 BC237A BC237B
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. V EBO *CBO ^CB (V) (W) (|iA) @ (V) Min 8Tc=25°c 0.625 45 BC207 50 BC208B 25 (A) 0.015 @ ^CE(SAT) (mA) 0 (V ) Min Max Max 0.1

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BC207 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min Pd 'c (W) W @Tc=25°c SO 45 5 0.625 0.1 ‘CBO V CB w ï(V ) Max 'c e s m ^ce

SL 100 NPN Transistor

Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE

BC238B npn

Abstract: BC337-25 BC415A CBE BC238B Bc238B, NPN BC337 CBE BC307A BC414B BC337-25 CBE BC238C
Contextual Info: S P R AGUE EconolineR Plast ic-M old ed Silicon S E P T R Transistors SMALL-SIGNAL AMPLIFIERS PRO-ELECTRON SERIES >- Pd BC Ta = 25°C V(BR) V(BR) V(BR) Conditions C BO CEO E BO Ic Q. (mW) Vo lts V olts Vo lts (m A) BC182A NPN 300 60 50 6 2 5 120 BC182B NPN