hFE-1000 BC
Abstract: C943 bc879 c942 bc 384 b bc 877 bc 390 C853 bc877 876 pin
Text: NPN Silicon Darlington Transistors BC 875 … BC 879 High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 PNP ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 875 BC 877 BC 879
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Original
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C62702-C853
C62702-C854
C62702-C855
hFE-1000 BC
C943
bc879
c942
bc 384 b
bc 877
bc 390
C853
bc877
876 pin
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PDF
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C942
Abstract: C943 bc 877 C62702-C941 C62702-C943 C62702-C942 bc876 bc880 bc 880 bc 878
Text: PNP Silicon Darlington Transistors BC 876 … BC 880 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 875, BC 877, BC 879 NPN ● Type Marking Ordering Code BC 876 BC 878 BC 880 – C62702-C943
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Original
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C62702-C943
C62702-C942
C62702-C941
C942
C943
bc 877
C62702-C941
C62702-C943
C62702-C942
bc876
bc880
bc 880
bc 878
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PDF
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bc 877
Abstract: C853 C62702-C853 C62702-C854 C62702-C855 marking bc BC879 bc 879 BC875
Text: NPN Silicon Darlington Transistors BC 875 … BC 879 High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 PNP ● Type Marking Ordering Code BC 875 BC 877 BC 879 – C62702-C853 C62702-C854 C62702-C855
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Original
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C62702-C853
C62702-C854
C62702-C855
bc 877
C853
C62702-C853
C62702-C854
C62702-C855
marking bc
BC879
bc 879
BC875
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PDF
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BC617
Abstract: No abstract text available
Text: BC 617 BC 618 NPN Silicon Darlington Transistors BC 617 BC 618 High current gain ● High collector current ● 2 1 Type Marking Ordering Code BC 617 BC 618 – Q62702-C1137 Q62702-C1138 Pin Configuration 1 2 3 C B E 3 Package1 TO-92 Maximum Ratings Parameter
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Original
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Q62702-C1137
Q62702-C1138
BC617
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PDF
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transistor bc 517
Abstract: BC517 transistor bc 100 Q62702-C825 TRANSISTOR BC c825 BC 517 TRANSISTOR BC 135
Text: BC 517 NPN Silicon Darlington Transistor BC 517 High current gain ● High collector current ● Complementary type: BC 516 PNP ● 2 1 1 3 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 517 – Q62702-C825 C TO-92 B E Maximum Ratings Parameter
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Original
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Q62702-C825
transistor bc 517
BC517
transistor bc 100
Q62702-C825
TRANSISTOR BC
c825
BC 517
TRANSISTOR BC 135
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PDF
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transistor bc 318
Abstract: TRANSISTOR BC 321 transistor bc 325 TRANSISTOR BC 135 bc516 BC517 TRANSISTOR BC C944 Q62702-C944 transistor bc 517
Text: PNP Silicon Darlington Transistor BC 516 High current gain ● High collector current ● Complementary type: BC 517 NPN ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 516 – Q62702-C944 C TO-92 B E Maximum Ratings Parameter Symbol
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Original
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Q62702-C944
transistor bc 318
TRANSISTOR BC 321
transistor bc 325
TRANSISTOR BC 135
bc516
BC517
TRANSISTOR BC
C944
Q62702-C944
transistor bc 517
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PDF
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bc516
Abstract: C944 Q62702-C944 TRANSISTOR BC BC 517 TRANSISTOR BC 135 517 bc
Text: PNP Silicon Darlington Transistor BC 516 High current gain ● High collector current ● Complementary type: BC 517 NPN ● 2 1 3 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 516 – Q62702-C944 C TO-92 B E Maximum Ratings Parameter Symbol
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Original
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Q62702-C944
bc516
C944
Q62702-C944
TRANSISTOR BC
BC 517
TRANSISTOR BC 135
517 bc
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PDF
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bcx38c
Abstract: bcx38b BCX38A
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS BCX38A BCX38B BCX38C TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL
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Original
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BCX38A
BCX38B
BCX38C
C-120
BCX38ABCRev010602E
bcx38c
bcx38b
BCX38A
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PDF
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS BCX38A BCX38B BCX38C TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL
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Original
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BCX38A
BCX38B
BCX38C
C-120
BCX38ABCRev010602E
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PDF
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MPSA28
Abstract: MPSA29
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS MPSA28 / MPSA29 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage
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Original
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MPSA28
MPSA29
C-120
29Rev270607E
MPSA29
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Darlington Transistors BC 875 . BC 879 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 876, BC 878 BC 880 PNP Type Marking BC 875 BC 877 BC 879 Ordering Code PinClonfiguration 1 2 3 Package1)
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OCR Scan
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C62702-C853
C62702-C854
C62702-C855
EHP0022B
120blb
CHP00232
fl235b05
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PDF
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BC87
Abstract: No abstract text available
Text: SIEMENS PNP Silicon Darlington Transistors • BC 876 . BC 880 High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 875, BC 877, BC 879 NPN Type Marking BC 876 BC 878 BC 880 Ordering Code
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OCR Scan
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C62702-C943
C62702-C942
C62702-C941
235b05
BC876
BC87
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PDF
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BU 808 DX
Abstract: ei50 bu 808 df 3AR 3ER 3FR BB 4130 BC860 BCV26 T3 BCV26 BCV46 BCW29
Text: /T T SGS-THOMSON SURFACE MOUNT DEVICES Ä 7# U D M iyiC TM Ö tgS GENERAL PURPOSE & INDUSTRIAL PNP GENERAL PURPOSE TRANSISTORS Vc e O 'c ptot hFE 'C LU VcBO O > Type / Iß max VCES* BC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-25 BC 808-40 BC 856 A BC 856 B
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OCR Scan
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BSS63
SOA55
SOA56
BCV26
BCV46
BU 808 DX
ei50
bu 808 df
3AR 3ER 3FR
BB 4130
BC860
BCV26 T3
BCW29
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PDF
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bc617
Abstract: No abstract text available
Text: S IE M E N S NPN Silicon Darlington Transistors BC 617 BC 618 • High current gain • High collector current Type Marking Ordering Code BC 617 BC 618 — Q62702-C1137 Q62702-C1138 Pin Co nfigurat ion 1 2 3 C B .E Package1 TO-92 Maximum Ratings Parameter
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OCR Scan
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Q62702-C1137
Q62702-C1138
71utoff
CHPOOI87
fi23SbOS
D120531
235b05
G12D532
fl235b05
bc617
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PDF
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|
Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Darlington Transistor BC 517 • High current gain • High collector current • Complementary type: BC 516 PNP Type Marking Ordering Code P inC onfigur ation 1 2 3 Package1) BC 517 - Q62702-C825 C TO-92 B E Maximum Ratings Parameter
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OCR Scan
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Q62702-C825
111Jlllll!
fl235b05
053SbOS
D1SQ52Ã
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PDF
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Untitled
Abstract: No abstract text available
Text: J BC 516 BC 517 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.
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OCR Scan
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BC516
BC517
T0-92F
400mA
625mW
0430B
0650B
4300B
6500B
20MHz
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PDF
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BC517
Abstract: BC516 bc516 micro electronics
Text: J BC 516 BC 517 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS J The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.
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OCR Scan
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BC516
BC517
T0-92F
400mA
625mW
100nA
100mA
20MHz
bc516 micro electronics
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PDF
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BC517
Abstract: BC516 bc516 micro electronics bc 517
Text: BC 5 1 6 BC 5 1 7 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS JP*. %. CASE T0-92F The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence
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OCR Scan
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BC517
T0-92F
400mA
625mW
100mA
BC516
20MHz
80x69477
bc516 micro electronics
bc 517
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PDF
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C22B
Abstract: ESM2369 bc 517
Text: c général purpose dlarlington — plastic case darlington usage général — boîtier plastique 1H0MS0N-CSF NPN Characteristic» at 25 °C Maximum ratings Type PNP Ptot V cEO mW (V) 625 30 •»21E min BC 517 BC 516 (1) Lead formed to TO 18 pin configuration
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OCR Scan
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CB-76
C22B
ESM2369
bc 517
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PDF
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555T
Abstract: me 555 IC 555 ML555T ML555V 12v to 5v 555 ML555 555 amplifier 2N5305 TTL 555
Text: fllultipl* Transistor/ Darlington amplifier/ r Electrical C ha racteristics @ M a x im u m R atin gs T Y P E NO. PD C BVc b O LV CEO h jrg e v EBO @ T a = 25°C ME 2N 2N 2N 2N 5308 5305 5306 5307 5308 BC 516 BC 517 m in. 250m W 500m W 5Q 0m W 500m W 500m W
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OCR Scan
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250mW
300mA
60MHz
O-106
500mW
O-92B
555T
me 555
IC 555
ML555T
ML555V
12v to 5v 555
ML555
555 amplifier
2N5305
TTL 555
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PDF
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Untitled
Abstract: No abstract text available
Text: BCV26 BCV46 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSU E 3 - SEPTEMBER 1995 FEATURES * L o w saturation voltage C O M P LE M E N T A R Y TYPE - B C V 2 6 - BC V27 P A R T M A R K IN G D E T A IL S - 8 C V 2 6 - ZFD c V E BC V46 - BCV47 B C V 4 6 - ZFE
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OCR Scan
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BCV47
BCV26
BCV46
BCV46
10rnA
150OC
-100mA
-10roA,
-100mA,
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PDF
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2904 kd
Abstract: No abstract text available
Text: BC372 BC373 M AXIM UM RATINGS Symbol BC 372 BC 3 73 Collector-Emitter V oltage Rating VCES 100 80 Vdc C ollector-Base V oltage VCBO 100 80 V dc Em itter-Base V oltage U nit CASE 29-04, STYLE 1 TO-92 TO-226AA vebo 12 V dc Collector Current — C o n tin u o u s
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OCR Scan
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BC372
BC373
O-226AA)
2904 kd
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PDF
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BC372
Abstract: bc373 BC373-25 BC373-16 to 92 case BC 372
Text: MOT ORO LA SC 12E D I t3b72SM QGÔSÔ53 1 | X S TR S/R F 7 BC372, -16, -25, -40 BC373, -16, -25 M A X IM U M RATINGS BC 373 U nit 100 80 Vdc 100 80 Vd c Sym bol BC 372 Collector-Emitter Voltage VC E O Collector-Base Voltage VCBO Em itter-Base Voltage R a tin g
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OCR Scan
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BC370
b3b7E54
BC372,
BC373,
Tj-25C:
BC372
bc373
BC373-25
BC373-16
to 92 case
BC 372
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PDF
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KT853
Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN
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OCR Scan
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
3N24x
24xTX
KT853
KT850
KT853A
LTR-305D
H0A0872-n55
H0A1405-1
h0a2001
MOC70T3
HOA708-1
smd diode 825B
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PDF
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