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    BC 357 TRANSISTOR PIN Search Results

    BC 357 TRANSISTOR PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC 357 TRANSISTOR PIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC 114 transistor

    Abstract: bc 357 transistor pin details bc 357 transistor bc 357 transistor pin transistor bc 318 transistor BC 153 BC 170 transistor BC307A transistor BC 307 CDIL BC307
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification


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    PDF BC307 BC308 BC309 C-120 Rev160701 BC 114 transistor bc 357 transistor pin details bc 357 transistor bc 357 transistor pin transistor bc 318 transistor BC 153 BC 170 transistor BC307A transistor BC 307 CDIL BC307

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification


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    PDF BC307 BC308 BC309 C-120 Rev160701

    bc 357 transistor datasheet

    Abstract: bc 309 b transistor BC307 bc 357 transistor BC308 BC 114 transistor BC307A low noise transistor bc transistor BC 308 BC309
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification


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    PDF BC307 BC308 BC309 C-120 Rev160701 bc 357 transistor datasheet bc 309 b transistor bc 357 transistor BC 114 transistor BC307A low noise transistor bc transistor BC 308 BC309

    TRANSISTOR BC 413

    Abstract: BC414C BC413C bc 357 transistor pin details BC413B BC413 bc 357 transistor BC414B BC414 Transistor BC413C
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC 413, B, C BC 414, B, C TO-92 Plastic Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF BC414 C-120 Rev160701 TRANSISTOR BC 413 BC414C BC413C bc 357 transistor pin details BC413B BC413 bc 357 transistor BC414B BC414 Transistor BC413C

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic Package E BC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL


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    PDF BC317/A/B C-120 Rev220103E

    BC317 transistor

    Abstract: transistor BC317 BC317 BC317A BC317B bc 357 transistor pin
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic Package E BC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL


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    PDF BC317/A/B C-120 Rev220103E BC317 transistor transistor BC317 BC317 BC317A BC317B bc 357 transistor pin

    BC317

    Abstract: transistor BC317 BC317B BC317 transistor BC317A BC317B equivalent bc 357 transistor
    Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic Package E BC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage


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    PDF QSC/L-000019 BC317/A/B C-120 Rev220103E BC317 transistor BC317 BC317B BC317 transistor BC317A BC317B equivalent bc 357 transistor

    BF199 parameters

    Abstract: BF199
    Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR RF EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless otherwise specified DESCRIPTION


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    PDF QSC/L-000019 BF199 C-120 BF199Rev110302D BF199 parameters BF199

    cmd transistor marking cy

    Abstract: CY-360 marking code WM4 U1015 uPD753108 uPD753204 uPD753206 uPD753208 uPD75P3216 code marking s20 TRANSISTOR
    Text: User’s Manual µPD753208 4-bit Single-chip Microcontrollers µPD753204 µPD753206 µPD753208 µPD75P3216 Document No. U10158EJ2V0UM00 2nd edition Date Published December 1997 N Printed in Japan 1995 [MEMO] 2 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS


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    PDF PD753208 PD753204 PD753206 PD75P3216 U10158EJ2V0UM00 cmd transistor marking cy CY-360 marking code WM4 U1015 uPD753108 uPD753204 uPD753206 uPD753208 uPD75P3216 code marking s20 TRANSISTOR

    nb-358

    Abstract: U1015 marking code WM4 RBS 6000 Data more RBS 6000 RBS 6000 -ericsson RBS 6000 software rbs manual CY-360 marking WM4
    Text: User’s Manual µPD753208 4-bit Single-chip Microcontrollers µPD753204 µPD753206 µPD753208 µPD75P3216 Document No. U10158EJ2V1UM00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995 [MEMO] 2 User’s Manual U10158EJ2V1UM00 NOTES FOR CMOS DEVICES


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    PDF PD753208 PD753204 PD753206 PD75P3216 U10158EJ2V1UM00 nb-358 U1015 marking code WM4 RBS 6000 Data more RBS 6000 RBS 6000 -ericsson RBS 6000 software rbs manual CY-360 marking WM4

    U1015

    Abstract: CY-360 marking code WM4 marking WM4 TRANSISTOR BC 135 TRANSISTOR BC 157 TRANSISTOR BC 187 upper ram digital sphygmomanometer circuit diagram uPD753108 uPD753204
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF d88-6130 U1015 CY-360 marking code WM4 marking WM4 TRANSISTOR BC 135 TRANSISTOR BC 157 TRANSISTOR BC 187 upper ram digital sphygmomanometer circuit diagram uPD753108 uPD753204

    2N5551

    Abstract: 2N5551 TO92 india limited
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR E 2N5551 TO- 92 CBE BC High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified


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    PDF 2N5551 25deg C-120 2N5551 2N5551 TO92 india limited

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR E 2N5551 TO- 92 CBE BC High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified


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    PDF 2N5551 25deg C-120

    bc 357 transistor pin details

    Abstract: 2N5551
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR E 2N5551 TO- 92 CBE BC High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified


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    PDF ISO/TS16949 2N5551 25deg C-120 bc 357 transistor pin details 2N5551

    TRANSISTOR SMD MARKING CODES

    Abstract: PMBT3906YS MARKING CODE SMD IC
    Text: PMBT3904YS 40 V, 200 mA NPN/NPN general-purpose double transistor Rev. 01 — 12 May 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose double transistor in a SOT363 SC-88 very small Surface-Mounted Device (SMD) plastic package.


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    PDF PMBT3904YS OT363 SC-88) PMBT3904YS SC-88 PMBT3906YS PMBT3946YPN TRANSISTOR SMD MARKING CODES PMBT3906YS MARKING CODE SMD IC

    TRANSISTOR BC 384

    Abstract: bc 357 transistor transistor BC 336 TRANSISTOR BC 413 transistor BC 310 TRANSISTOR BC 321 bc 357 transistor pin TRANSISTOR BC 256 transistor bc 318 BC347
    Text: 6091788 MICRO ELECTRO N I C S f.QRP 05 _ 820 0 0 6 4 4 D E j b O c] 1 7 ñ ñ 0 7 1 2 ^ - / 7 000Gb44 E | Low Level and General Purpose Amplifiers P O LA R IT Y CASE 251 252 253 256 257 P P P P P TO-92F TO-92F TO-92F TO-92F TO-92B 300 300 300 300 300


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    PDF O-92F O-92B to-02 melf-002. melf-006 TRANSISTOR BC 384 bc 357 transistor transistor BC 336 TRANSISTOR BC 413 transistor BC 310 TRANSISTOR BC 321 bc 357 transistor pin TRANSISTOR BC 256 transistor bc 318 BC347

    Untitled

    Abstract: No abstract text available
    Text: 0 . OPTEK Product Bulletin JANTX, JANTXV, 2N5794U September 1996 Surface Mount Dual NPN Transistor Type JANTX, JANTXV, 2N5794U • • • Ceramic surface mount package Hermetically sealed Miniature package minimizes circuit board area required • Electrical performance similar to dual


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    PDF 2N5794U 2N2222 MIL-PRF-19500/495

    BOW54A

    Abstract: BDW540 BOW54B BDWS30 BDW53c
    Text: BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARUNGTONS Copyright C 1997, Power Innovations Limited, UK • _ AUGUST 1978-REVISED MARCH 1997 Designed or Complementary Use with BDW53, BDW53A, BDW53B, BDW53C and BDWS30 • 40 W at 25°C Case Temperature


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    PDF BDW54, BDW54A, BDW54B, BDW54C, BDW54D 1978-REVISED BDW53, BDW53A, BDW53B, BDW53C BOW54A BDW540 BOW54B BDWS30

    BCB60

    Abstract: BC860 BC859 BC859A BC859B BC859C BC860A BC860B BC860C BCB59
    Text: • bhS3n31 □ÜS447CI 755 BIAPX BC859 BC860 b?E J> N AUER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic SOT-23 package p rim a rily intended f o r low-noise in p u t stages in tape recorders, h i-fi a m p lifiers and o th e r audio freq u e n cy e q u ipm ent in th ic k and th in -film h y b rid circu its.


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    PDF bhS3n31 GE447là BC859 BC860 OT-23 BC859 bbS3T31 G024M63 BCB60 BC860 BC859A BC859B BC859C BC860A BC860B BC860C BCB59

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


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    PDF BUK203-50X BUK203-5QX BUK203-50X

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


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    PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    bts 43202

    Abstract: BTS432E2-E3062A BTS 732 3H DIODE smd smd transistor jst BTS432E2 E3062A SMD code E2 thermal overload relay fas E3043 Q67060-S6202-A2
    Text: • 0235bOS ODfilMTb TTT SIEMENS PROFET BTS 432 E2 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • • Load dump and reverse battery protection1 80 M_oad dump Clamp of negative voltage at output 58 V bb-VouT Avalanche Ciatnp


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    PDF 0235bOS fl23Sb05 O-220AB/5 Q67060-S6202-A2 CPT0SI65 O-22QAB/5, E3043 Q67060-S6202-A4 bts 43202 BTS432E2-E3062A BTS 732 3H DIODE smd smd transistor jst BTS432E2 E3062A SMD code E2 thermal overload relay fas Q67060-S6202-A2