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    BC 357 TRANSISTOR Search Results

    BC 357 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC 357 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q62702-C1689

    Abstract: ic 807 QBC807 Q62702-C1504 Q62702-C1692 Q62702-C1721 Q62702-C1735 Q62702-C1736 marking code 359 sot-23 marking code BC
    Text: PNP Silicon AF Transistors ● ● ● ● ● BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN 2 3 1 Type Marking Ordering Code Pin Configuration


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    PDF Q62702-C1735 Q62702-C1689 Q62702-C1721 Q62702-C1736 Q62702-C1504 Q62702-C1692 OT-23 Q62702-C1689 ic 807 QBC807 Q62702-C1504 Q62702-C1692 Q62702-C1721 Q62702-C1735 Q62702-C1736 marking code 359 sot-23 marking code BC

    bc 5411

    Abstract: BC107 pin configuration BC108 pin configuration BC108 transistor BC108 BC107 BC107 DATASHEET bc108b equivalent BC107B Transistor BC107
    Text: BC107/BC108 Series Low Power Bipolar Transistors General Purpose Amplifier/Switches Feature: • NPN Silicon Planar Epitaxial Transistors. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27


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    PDF BC107/BC108 BC107 BC108 bc 5411 BC107 pin configuration BC108 pin configuration BC108 transistor BC108 BC107 BC107 DATASHEET bc108b equivalent BC107B Transistor BC107

    bc 357 transistor

    Abstract: bc 357 transistor datasheet BCW61B BCW61C BCW61C-BC BD 140 transistor PNP Epitaxial Silicon Transistor sot-23 transistor BC 55 transistor BD 140 BCW61D
    Text: BCW61B BCW61C BCW61D SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package,


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    PDF BCW61B BCW61C BCW61D OT-23 200Hz bc 357 transistor bc 357 transistor datasheet BCW61B BCW61C BCW61C-BC BD 140 transistor PNP Epitaxial Silicon Transistor sot-23 transistor BC 55 transistor BD 140 BCW61D

    BC 114 transistor

    Abstract: bc 357 transistor pin details bc 357 transistor bc 357 transistor pin transistor bc 318 transistor BC 153 BC 170 transistor BC307A transistor BC 307 CDIL BC307
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification


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    PDF BC307 BC308 BC309 C-120 Rev160701 BC 114 transistor bc 357 transistor pin details bc 357 transistor bc 357 transistor pin transistor bc 318 transistor BC 153 BC 170 transistor BC307A transistor BC 307 CDIL BC307

    Untitled

    Abstract: No abstract text available
    Text: BCW61B BCW61C BCW61D w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low level, low noise


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    PDF BCW61B BCW61C BCW61D BCW61B OT-23

    bc 357 transistor

    Abstract: BCW61C-BC BCW61C transistor BC SERIES transistor BC 55 BCW61B BCW61D BC transistor series transistor W-32 Bcw61d sot23
    Text: BCW61B BCW61C BCW61D w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low level, low noise


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    PDF BCW61B BCW61C BCW61D BCW61B OT-23 bc 357 transistor BCW61C-BC BCW61C transistor BC SERIES transistor BC 55 BCW61D BC transistor series transistor W-32 Bcw61d sot23

    Untitled

    Abstract: No abstract text available
    Text: Central BCW61B BCW61C BCW61D TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package,


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    PDF BCW61B BCW61C BCW61D BCW61B: BCW61C: BCW61D: OT-23 200Hz

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification


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    PDF BC307 BC308 BC309 C-120 Rev160701

    bc 357 transistor datasheet

    Abstract: bc 309 b transistor BC307 bc 357 transistor BC308 BC 114 transistor BC307A low noise transistor bc transistor BC 308 BC309
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C TO-92 Plastic Package General Purpose Transistors Deisgned For Small Signal Amplification


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    PDF BC307 BC308 BC309 C-120 Rev160701 bc 357 transistor datasheet bc 309 b transistor bc 357 transistor BC 114 transistor BC307A low noise transistor bc transistor BC 308 BC309

    TRANSISTOR BC 413

    Abstract: BC414C BC413C bc 357 transistor pin details BC413B BC413 bc 357 transistor BC414B BC414 Transistor BC413C
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC 413, B, C BC 414, B, C TO-92 Plastic Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF BC414 C-120 Rev160701 TRANSISTOR BC 413 BC414C BC413C bc 357 transistor pin details BC413B BC413 bc 357 transistor BC414B BC414 Transistor BC413C

    BC182A

    Abstract: bc182b BC182G
    Text: BC182, BC182A, BC182B Amplifier Transistors NPN Silicon Features • Pb−Free Package is Available* http://onsemi.com COLLECTOR 1 2 BASE MAXIMUM RATINGS Rating Symbol BC182 Unit Collector −Emitter Voltage VCEO 50 Vdc Collector −Base Voltage VCBO 60 Vdc


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    PDF BC182, BC182A, BC182B BC182 BC182A BC182G

    BC307D

    Abstract: BC307 BC309B 308C BC308C BC309 BC309 Motorola
    Text: MOTOROLA Order this document by BC307/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307,B,C PNP Silicon BC308C BC309B COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 307 BC 308C BC 309 Unit Collector – Emitter Voltage VCEO –45 –25


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    PDF BC307/D BC307 BC308C BC309B BC307/D* BC307D BC309B 308C BC308C BC309 BC309 Motorola

    BC183

    Abstract: BC182 BC182A BC184 BC182B BC184 pin out transistors BC 183
    Text: MOTOROLA Order this document by BC182/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 182 BC 183 BC 184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage


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    PDF BC182/D BC182 BC183 BC184 BC182/D* BC183 BC182A BC184 BC182B BC184 pin out transistors BC 183

    equivalent of transistor bc212 bc 214

    Abstract: BC212 BC212B BC213 BC214 pin out bc212b equivalent BC214 BC 213 Motorola
    Text: MOTOROLA Order this document by BC212/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC212,B PNP Silicon BC213 BC214 COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 212 BC 213 BC 214 Unit Collector – Emitter Voltage VCEO –50 –30 –30


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    PDF BC212/D BC212 BC213 BC214 BC212/D* equivalent of transistor bc212 bc 214 BC212B BC213 BC214 pin out bc212b equivalent BC214 BC 213 Motorola

    BF-139

    Abstract: bf139 transistors BC 549 transistors TO-92 case bc bc 540 BC211 8C547 J BC211 CL16F CTO-92
    Text: S ilic o n N P N transistors, general purpose continued Tam b- 25 °C Transistors N P N silicium , usage généra! (suite) tS v CEO (V) h2 ie (V) ic / 'b max ImA) max ImA) min 40 250 150 1 1000/100 300 § 341 40 250 150 1 1000/100 300 § 341 45 110 240 2


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    Transistoren DDR

    Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
    Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60


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    PDF SCE237 SCE238 SCE239 SCE308 Transistoren DDR vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369

    bc 357 transistor

    Abstract: transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC
    Text: * BC 237 BC 238 BC 239 "RANSISTORS NPN SILIC IU M , PLANAR EP ITAXIAUX IPN SILIC O N TRANSISTORS, E P IT A X IA L PLAN A R Preferred device D is p o s itif recommandé 3C 237 and BC 238 transistors are intended for ise in audio frequency preamplifier and driver


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    PDF CB-76 bc 357 transistor transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC

    SSY20

    Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
    Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3


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    BC416C

    Abstract: BC416 BC415C BC416B BC415B BC415
    Text: MO TORO LA SC 12E D I XSTRS/R F GDÖSÖSfc. ? I T -W ? BC415, B, C BC416, B, C MAXIM UM RATINGS S ym b o l R atin g BC 415 BC 416 U n it Vdc CASE 29-04, STYLE 17 TO-92 TO-226AA C ollector-E m itter Voltage VcEO 35 45 C ollector-Base Voltage VcBO 45 50 Emitter-Base Voltage


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    PDF BC415, BC416, O-22C BC416C BC416 BC415C BC416B BC415B BC415

    BC238B

    Abstract: BC239 BC237A BC238 BC237 bc237v
    Text: MOTOROLA Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors BC237,A,B,C BC238B,C BC239,C NPN Silicon COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol BC 237 BC 238 BC 239 Unit VCEO 45 25 25


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    PDF BC237/D BC237 BC238B BC239 O-226AA) BC237A BC238 bc237v

    TR BC 237 B

    Abstract: TR BC 238 C238B 239 BC bc237v
    Text: BC237,A,B,C BC238,B,C BC239,C M A X IM U M R A TIN G S R a tin g Sym bol U n it BC BC BC 237 238 239 C o llecto r-E m itte r Voltage VCEO 45 25 25 C olle cto r-E m itte r Voltage VCES 50 30 30 Vdc vebo 6.0 5.0 5.0 Vdc E m itter-Base Voltage Vdc CASE 29-04, STYLE 17


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    PDF BC237 BC238 BC239 O-226AA) BC239 TR BC 237 B TR BC 238 C238B 239 BC bc237v

    BC182

    Abstract: bc183 bc184 transistors BC 183
    Text: BC182rA,B BC183 BC184 M AXIM UM RATINGS Rating S ym bol BC BC BC 182 1 83 184 U nit C o llecto r-E m itte r Voltage VCEO 50 30 30 Vdc C ollector-Base Voltage VCBO 60 45 45 Vdc E m itter-Base Voltage vebo 6 .0 Vdc C ollector C urrent - C ontinuous 'C 100 mAdc


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    PDF BC182rA BC183 BC184 O-226AA) BC237 fC183 BC184 BC182A BC182B BC182 transistors BC 183

    cbc212

    Abstract: KSS 213 BC212 BC214 BC214 pin out kss 213 b kss 213 c BC212B kss 210 BC213
    Text: MOTOROLA Order this document by BC212/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC212,B BC213 BC214 PNP Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Collector-Em itter Voltage Symbol BC 212 BC 213 BC 214 Unit VCEO -5 0 -3 0 -3 0 Vdc Collector-Base Voltage


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    PDF BC212/D BC212 BC213 BC214 O-226AA) BC212/D cbc212 KSS 213 BC214 BC214 pin out kss 213 b kss 213 c BC212B kss 210

    bc183b

    Abstract: BC183B MOTOROLA 2904S cbc182 BC184C transistors BC 183 BC182 bc184b BC183 2 bc184
    Text: MOTORCLA SC ISE D I t.3t.755M QaflSfl31 2 | XSTRS/R F - r r W 7 BC182, A, B BC183, A, B, C BC184, B, C M A X IM U M RATINGS Sym bol R a t in g BC BC BC 182 183 184 U n it C o lle c to r-E m itte r V o lta g e VcEO 50 30 30


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    PDF QaflSfl31 BC182 BC183 bc183b BC183B MOTOROLA 2904S cbc182 BC184C transistors BC 183 bc184b BC183 2 bc184