BC 303 TRANSISTOR Search Results

bc 303 transistor

Abstract: bc303 bc 301 transistor
Contextual Info: BC 303 BC 304 S I L I C O N P L A N A R PNP MEDIUM POWER AUDIO DRIVERS The BC 303 and BC 304 are silicon planar epitaxial PNP transistors in TO-39 metal case. They are intended p a rticularly as audio driver stages in com m ercial and professional equipm ents. In addition they are useful as high speed saturated switches

bc 303 transistor

Abstract: bc303 bc 301 transistor BC304
Contextual Info: BC 303 BC 304 S IL IC O N PLANAR PNP M EDIUM POWER A U D IO DRIVERS The BC 303 and BC 304 are silicon planar epitaxial PIMP transistors in TO-39 metal case. They are intended particularly as audio driver stages in commercial and professional equip­ ments. In addition they are useful as high speed saturated switches and general purpose

general purpose power transistors

Abstract: BC139
Contextual Info: CONSUMER TRANSISTORS X CD _E c E UJ IL JZ < u C3 > « LÜ U > < _o o h< oc c < X CO E o o L fl CNI II CJ o I@ [E X CO PACKAG E t 0c o C/3 UJ a (5 lc RANGE (mA) PO L A R IT Y z o (A )o a o A TYPE Medium power audio amplifiers s ji E Hi LL -C Q Q. BC 119 NPN Audio output

BC301

Abstract: bc 301 transistor bc300 bc audio transistors BC302 bc 303 transistor transistor bc 102 bc 103 bc 301 Bc 303
Contextual Info: BC 300 BQ 301 BC 302 SILICON P L A N A R NPN MEDIUM POWER AUDIO DRIVERS The BC 300, BC 301 and BC 302 are silicon planar epitaxial NPN transistors in TO-39 metal case. They are intended fo r audio driver stages in com m ercial and industrial equipm ents. In addition they are useful as high speed saturated sw itches and

BC113

Abstract: audio NPN bc 657 BC 114
Contextual Info: CONSUMER TRANSISTORS continued > Li. a. < _§ X CD E u > CD O """a) o ’ o o n o @ a. >• UJ ll.c PACKAGE POLARITY DESCRIPTION (A )03 3A TYPE High voltage amplifiers o in CM II ro 1@ < j= _u 5 a a. BC 300 NPN Audio driver 80 120 1000 (10) 140 5 0.85 BC 393

bc 301 transistor

Abstract: bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A < 0 ,2 A v C E O ^ \^ PNP PNP

BC413

Abstract: AMI siemens BC414C N 413 af BC414 BC413C bc 580 BTB 700 siemens marking 411 414c
Contextual Info: SIE D SIEM EN S • A53Sba5 D041S64 4bb « S I E C SIEMENS AKTIENGESELLSCHAF NPN Silicon AF Transistors BC 413 BC 414 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 415, BC 416 PNP

bc 303 transistor

Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
Contextual Info: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in

CN302

Abstract: CN300 CN301 CN303 CN304 CP500
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS CN300 / 301 / 302 CN303 / 304 TO-92 Plastic Package E BC General Purpose Audio Transistors Complementary CP500 series ABSOLUTE MAXIMUM RATINGS

CN301

Abstract: CN302 CN304 CN300 CN303 CP500 "304" "TO-92" dsa001063
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CN300 / 301 / 302 CN303 / 304 TO-92 Plastic Package E BC General Purpose Audio Transistors Complementary CP500 series ABSOLUTE MAXIMUM RATINGS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CN300 / 301 / 302 CN303 / 304 TO-92 Plastic Package E BC General Purpose Audio Transistors Complementary CP500 series ABSOLUTE MAXIMUM RATINGS

Contextual Info: 5SC » • ÛH3SbOS QÜ0MSS4 T ■ S I E 6 r NPN Silicon AF Transistors - 25C BCX 22 BCX 24 0 4 7 *5 ^ SIEMENS AKTIEN6ESELLSCHAF BCX 22, BCX 24, and BCX 94 are epitaxial NPN silicon planar transistors in TO 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case. These transistors

Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type BR CBO V ’ (BR)CEO (V) (V) v DC Current Gain (BR)EBO Max. @ V C8 (V) (nA) (V) K* v CE(MI) @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)

transistor bc 138

Abstract: bc 301 transistor transistor Bc 287 bc 303 transistor transistor BC 341 transistor BC 388 TRANSISTOR BC 345 transistor bc 144 transistor BC 310 transistor BC 185
Contextual Info: 6 0 9 1 7 8 8 M I C R O E L E C T R O N I C S criiy» as D E Ït.D 'ilT flfl DODDbSS 82 D 0 0 6 5 5 7 Medium Power Amplifiers and Switches POLARITY M AXIM UM RATINGS CASE BC119 BC 138 BC 139 BC 140 BC 141 N N P N N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 700

TMPT404

Contextual Info: ALLEGRO MICROSYSTEMS 8514019 SPRAGUE. INC =53 D • G5DM33Ö 0D03b07 b ■ A L GR SE M IC O N DS /I C S SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type Marking BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D

marking C1

Abstract: TMPTA70 TMPT5401 h2t1
Contextual Info: PNP TRANSISTORS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T. = 25°C V BF CBO v (BR)CEO V(BR)EBO Max. @ v CB Device hFE We «T @ lc @ v CE Max. @ lc Marking (V) (V) (V) (nA) BCW29 C1 303 32 5.0 100 20 120 260 2.0 BCW30 C2 3ID3 32 5.0 100 20 215 500 2.0

BC449

Abstract: BC449A equivalent bc 303 transistor AN469 BC447 BC449A MPS8598 MPS8599
Contextual Info: BC447, BC449, BC449A High Voltage Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Collector-Emitter Voltage BC447 BC449, BC449A VCEO Collector-Base Voltage BC447 BC449, BC449A VCBO Emitter-Base Voltage VEBO 5.0 Vdc Collector Current – Continuous

TMPT404

Contextual Info: SPRAGUE/SEM ICOND T 3 GROUP 8 5 1 4 0 1 9 SPRAGUE. SEMICONDS / IC S D • 0513050 0 D G 3 LiG7 7 ■ 93D 0 3 6 0 7 SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at Tfl = 25°C IcBO Device Type Marking BCW29 C1 BCW30 C2 BCW61A

bc487

Abstract: bc487b
Contextual Info: BC487, BC487B High Current Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 60 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current – Continuous

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

Contextual Info: ALLEGRO MICROSYSTEMS INC LIE ]> • 0504330 000b3A7 ■ A L 6R PNP TRANSISTORS TO-92ITO-226AA V*3 W and ‘T P DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C 'cBO DC Current Gain v CEIMl] * le V Max. v BR CBO V y(BR>CEO * (BR)EBO Max. @ v CB hFE K e

BC527

Abstract: BC528 BC538 BC537 BOX69477
Contextual Info: BC 527 • B C 528 FNP SILICON IP MEDIUM POWER TRANSISTORS. lifcw THE BC527, BC528 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC527, BC528 ARE COM­ PLEMENTARY TO THE NPN TYPE BC537, BC538

2sd 5023

Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

2sd 5023

Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1