BC 139 TRANSISTOR Search Results

BC 139 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

BC 139 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
bcw 94 b Abstract: BF-139 F 540 NS BSY54 BCW95B BSY55 Text: CB 76 (CB 6} (CB 7) Silicon NPN transistors, general purpose (continued) Tamb= 25 °C Transistors N P N silicium , usage générai (suite) (mW) VCEO (V) h21 E VCER* h21E V c E X a min max F 139 Bc F 139 B<> F 139 B TO 18 TO 18 540 540 540 330 330 40 60 60	OCR Scan	PDF
transistor bc 138 Abstract: bc 301 transistor transistor Bc 287 bc 303 transistor transistor BC 341 transistor BC 388 TRANSISTOR BC 345 transistor bc 144 transistor BC 310 transistor BC 185 Text: 6 0 9 1 7 8 8 M I C R O E L E C T R O N I C S criiy» as D E Ït.D 'ilT flfl DODDbSS 82 D 0 0 6 5 5 7 Medium Power Amplifiers and Switches POLARITY M AXIM UM RATINGS CASE BC119 BC 138 BC 139 BC 140 BC 141 N N P N N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 700	OCR Scan	PDF	BC119 to-237 to-02 melf-002. melf-006 to-237 MT-12 Sto/s-20 O-16H S40/S- transistor bc 138 bc 301 transistor transistor Bc 287 bc 303 transistor transistor BC 341 transistor BC 388 TRANSISTOR BC 345 transistor bc 144 transistor BC 310 transistor BC 185
BC264 Abstract: transistor a effet de champ b c 264 transistor bc264 F-139 equivalent transistor BC 55 TRANSISTOR effet de champ BC 264 CB-76 50 transistor BC 1 BF 212 transistor Text: BC 264 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EF FE T OE CHAMP, SILICIUM, CANAL N - LF amplification Amplification BF V DS 30 V max. ' dss 2 . . . . 12 mA à V GS = 0 in 4 groups en 4 groupes F 2 dB max à V q § = 0 f » 1 kHz Plastic case F 139 B — See outline drawing CB-76 on last pages	OCR Scan	PDF	CB-76 lY21sl BC264 transistor a effet de champ b c 264 transistor bc264 F-139 equivalent transistor BC 55 TRANSISTOR effet de champ BC 264 CB-76 50 transistor BC 1 BF 212 transistor
transistor bc 102 Abstract: BC139 TRANSISTOR BC 139 TRANSISTOR BC 119 Text: BC 139 S I L I C O N PLANAR PNP A U D IO O U T P U T A M P L I F I E R The B C 13 9 is a silicon planar epitaxial P N P transistor in a T O - 3 9 metal case. It is particu larly designed fo r use in a ud io o u tp u t and driver stages. T h e com p lem entary N P N type is	OCR Scan	PDF	-50mA s-100mA transistor bc 102 BC139 TRANSISTOR BC 139 TRANSISTOR BC 119
BF-139 Abstract: bf139 transistors BC 549 transistors TO-92 case bc bc 540 BC211 8C547 J BC211 CL16F CTO-92 Text: S ilic o n N P N transistors, general purpose continued Tam b- 25 °C Transistors N P N silicium , usage généra! (suite) tS v CEO (V) h2 ie (V) ic / 'b max ImA) max ImA) min 40 250 150 1 1000/100 300 § 341 40 250 150 1 1000/100 300 § 341 45 110 240 2	OCR Scan	PDF
bc 658 Abstract: bo 135 bc 433 bc 540 bo 139 BF139 BA 659 BC658 BCW93B BC659 Text: s ß / F 1139 8 CB 76 T 0 18 (CB 6) s T O 39 (CB 7) T O 92 (CB 97) Silicon PN P transistors, general purpose (continued) Transistors P N P silicium, usage générai (suite) VcEO (V) Case Ptot (mW) VCER* Tamb — 25 °C h21 E h2 1 E * min *C (m A) V C Esat	OCR Scan	PDF
BTO18 Abstract: sc 107 b BC190B BC190 BC140 BC 241 bo 139 BC107 2N3708 2N3707 Text: Silicon NPN transistors, general purpose continued Tamb = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76 Page	OCR Scan	PDF	BC140 BTO18 sc 107 b BC190B BC190 BC 241 bo 139 BC107 2N3708 2N3707
bf 649 Abstract: BC 247 bo 139 BF139 bf 867 BO30 Bc 649 ESM4091 bc 877 ESM4092 Text: N channel field effect transistors plastic case Transistors à effet de champ, canal N (boîtier plastique) Case V ( B R )G S S (V) Type Boîtier min * 2 U 38 19 T O 92o -2 5 2 N I5425 F 139 Bo — 3(3 2 N $ 4 26 F 13 9 0o -30 *G SS (nA) ( p A )# <D SS (m A)	OCR Scan	PDF	F139BÂ Bo-30_ ESM4091 ESM4092 ESM4303 Bo-30 bf 649 BC 247 bo 139 BF139 bf 867 BO30 Bc 649 bc 877
BC 641 Abstract: bc 207 npn BC190 bu 1011 ET 3005 h21e BU 208 BC140 BC190B bc107 Text: Silicon N PN transistors, general purpose continued Tam b = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76	OCR Scan	PDF
transistors BC 293 Abstract: 92-o350 BC212 3906 pnp BC177A BC178VI BC212f 2N4058 bc178b Text: Silicon P N P transistors, general purpose Tamb — 25 oc Transistors PN P sificium, usage général v CEO V Type j h 2 iE Case Plot VCER * B oîtie r (mW) VCEXD *21E min max 'c V cEsat (V ) (mAI max I c ^'b (mA) fT (MHz) min 2N 1131 TO 39 600 -35 20 45	OCR Scan	PDF	BC177A BC178VI BC212 transistors BC 293 92-o350 3906 pnp BC212f 2N4058 bc178b
general purpose power transistors Abstract: BC139 Text: CONSUMER TRANSISTORS X CD _E c E UJ IL JZ < u C3 > « LÜ U > < _o o h< oc c < X CO E o o L fl CNI II CJ o I@ [E X CO PACKAG E t 0c o C/3 UJ a (5 lc RANGE (mA) PO L A R IT Y z o (A )o a o A TYPE Medium power audio amplifiers s ji E Hi LL -C Q Q. BC 119 NPN Audio output	OCR Scan	PDF
BC639 Abstract: r 639 r 640 BC 639 bc635 BC637 JEDECTO-92 bc 640 BC 137 complementary 637 638 BC 138 Text: BC 635 • BC 637 • BC 639 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Kom plem entäre NF-Treiberstufen. K om plernentärtypen zu BC 636/BC 638/BC 640 Applications: For com plem entary AF driver stages.	OCR Scan	PDF	636/BC 638/BC BC639 r 639 r 640 BC 639 bc635 BC637 JEDECTO-92 bc 640 BC 137 complementary 637 638 BC 138
bc 540 Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0	OCR Scan	PDF	BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
transistor C 639 W Abstract: transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639 Text: BC 635 BC 637 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , P LAN A R E P IT A X IA L BC 639 Compì, of BC 636, BC 638, BC 640 - Driver stages of audio amplifiers Etages "D rive rs" d'amplificateurs BF 'CEO h21E 150m A	OCR Scan	PDF	150mA) F139B. CB-76 transistor C 639 W transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639

TRANSISTOR 636 Abstract: pnp transistor d 640 BC63B 639 TRANSISTOR PNP transistor BC 638 transistor BC 635 bc 640 bc638 638 transistor transistor BC 639 Text: BC 636 g Q 638 PNP S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR PNP S ILIC IU M , PLA N A R E P IT A X IA L BC 640 Compl. of BC 635, BC 637, BC 639 - Driver stages of audio amplifiers " " Etages Drivers d'am plificateurs BF Maximum power dissipation	OCR Scan	PDF	150mA) CB-76 TRANSISTOR 636 pnp transistor d 640 BC63B 639 TRANSISTOR PNP transistor BC 638 transistor BC 635 bc 640 bc638 638 transistor transistor BC 639
TRANSISTOR BC 413 Abstract: 414 transistor TRANSISTOR BC 413 npn TRANSISTOR BC 414 transistor c 413 bc 330 transistor TRANSISTOR BC 135 TRANSISTOR BC 413 b BC413C BC414C Text: *BC413 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR , ßQ TRANSISTOR NPN S ILIC IU M PLA N A R E P IT A X IA L sfc Preferred device D is p o s itif recommandé BC 413 and BC 414 are very low noise transis tors intended for input stages in audio frequen cy amplifiers.	OCR Scan	PDF	BC413 BC414 CB-76 indi13 TRANSISTOR BC 413 414 transistor TRANSISTOR BC 413 npn TRANSISTOR BC 414 transistor c 413 bc 330 transistor TRANSISTOR BC 135 TRANSISTOR BC 413 b BC413C BC414C
3866S Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM	OCR Scan	PDF
BC 418 Abstract: bc415b ssv 620 BC416A bc415a bc415 bc415c 416b IC 415 ms 415 Text: *BC 415 BC 416 PNP SILICON TRANSISTORS, EPITA X IA L PLANAR TRANSISTORS PNP S ILIC IU M , PLA N A R E P IT A X IA U X % Preferred device D is p o s itif recommandé The BC 415 and BC 416 are very low noise transistors intended for input stages in audio ^ frequency amplifiers.	OCR Scan	PDF	CB-76 BC 418 bc415b ssv 620 BC416A bc415a bc415 bc415c 416b IC 415 ms 415
TRANSISTOR BC 327 Abstract: h21e bc 327 complementary pair transistor BC 337 transistor AS 337 transistor BC 327 40 transistor bc 630 TRANSISTOR BC 328 BC327 transistor 327 Text: *B C 3 2 7 BC328 NP SILICON TRANSISTORS, EPITAXIAL PLANAR R A N S IS T O R S PNP S IL IC IU M , P L A N A R E P IT A X IA U X ompl. of BC 337 and BC 338 îf; Preferred device Dispositif recommandé he BC 327 and BC 328 transistors are intended fo r a ide variety o f medium power AF am plifier and switlin g application ; they are particulary useful as	OCR Scan	PDF	BC327 BC328 TRANSISTOR BC 327 h21e bc 327 complementary pair transistor BC 337 transistor AS 337 transistor BC 327 40 transistor bc 630 TRANSISTOR BC 328 transistor 327
Transistor 337 Abstract: transistor bc 337 transistor bc 630 c 337 25 transistor 338 BC 337 transistor BC 338 transistors bc 337 NPN 337 337 npn transistor Text: *B C 337 BC 338 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLA N A R E P IT A X IA U X Compì, of BC 327, BC 328 % Preferred device D isp o sitif recommandé The 8C 337 and BC 338 transistors are intended fo r a wide variety o f medium power AF am plifier	OCR Scan	PDF
catalogue des transistors bipolaires de puissance Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91 Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM	OCR Scan	PDF
transistor BC 331 Abstract: BC 331 Transistor bc 331 BC182 BC184 bc 184 transistor h21e BC183 transistor BC 55 transistor bc 182 Text: BC182 BC 183 BC 184 NPN SILICON TRANSISTOR, EPITAXIAL P LA N A R T R A N S IS T O R N P N S ILIC IU M , P L A N A R E P IT A X IA L Compì, of BC 212, BC 213, BC 214 H Preferred device D isp o sitif recommandé - Low noise preamplifier Préamplificateurs faible b ruit	OCR Scan	PDF	BC182 CB-76 V240-500 BC183C-BC184C 300tit 200/xA transistor BC 331 BC 331 Transistor bc 331 BC184 bc 184 transistor h21e BC183 transistor BC 55 transistor bc 182
Transistoren DDR Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369 Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60	OCR Scan	PDF	SCE237 SCE238 SCE239 SCE308 Transistoren DDR vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
TRANSISTOR BC 137 Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107 Text: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.	OCR Scan	PDF	023SbGS BC107, BC1071Â Q62702-C680 Q60203-X107-A Q60203-X107-B Q60203-X108 BC108 Q60203-X108-A Q60203-X108-B TRANSISTOR BC 137 TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107

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BC 139 TRANSISTOR Search Results

BC 139 TRANSISTOR Result Highlights (5)

BC 139 TRANSISTOR Datasheets Context Search

bcw 94 b

transistor bc 138

BC264

transistor bc 102

BF-139

bc 658

BTO18

bf 649

BC 641

transistors BC 293

general purpose power transistors

BC639

bc 540

transistor C 639 W

TRANSISTOR 636

TRANSISTOR BC 413

3866S

BC 418

TRANSISTOR BC 327

Transistor 337

catalogue des transistors bipolaires de puissance

transistor BC 331

Transistoren DDR

TRANSISTOR BC 137