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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: DEVELO PM ENTDATA " bbS3cl31 QQia?a3 5 • 11 This data sheat contains advance Information and specifications are subject to change without notice, BUS133 SERIES _ N AMER PHIL-IPS/DISCRETE 5SE j> T - 3 3 -1 5 " _ SILICON DIFFUSED POWER TRANSISTORS	OCR Scan	PDF	BUS133 BUS133H BUS133 T-33-15
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b'lE ]> bbS3cl31 DOETfciflM 430 BLY88C APX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is	OCR Scan	PDF	BLY88C bb53T31
PMSS3904 Philips SOT323 Abstract: transistor p04 p04 transistor PMSS3904 MARKING CODE D4t Text: b b S 3 * î3 1 Philips Semiconductors □ □ 2 5 CJ2E 2 7 7 H A P X N AMER PHILIPS/DISCRETE NPN general purpose transistor FE A T U R E S Product specification b?E D PMSS3904 P IN C O N F IG U R A T IO N • S-m ini package. D E S C R IP T IO N N P N transistor in a plastic S O T 3 2 3	OCR Scan	PDF	bbS3T31 25CJ2E PMSS3904 OT323 MAM062 bbS3T31 PMSS3904 Philips SOT323 transistor p04 p04 transistor PMSS3904 MARKING CODE D4t
BT145-500R Abstract: thyristor TAG 20 600 thyristor TAG 20 800 m2561 JS168 600R BT145 thyristor TAG 800 Text: N AMER PHILIPS/DISCRETE bTE D • t.bS3T31 []CI272bß flflT ■ BT145 SERIES THYRISTORS Glass-passivated 25 ampere th y ris to rs intended fo r use in applications involving high fatigue stress due to therm al c yclin g and repeated sw itching. These th y ris to rs feature a high surge cu rre n t	OCR Scan	PDF	bS3T31 CI272bÃ BT145 BT145-500R M2740 thyristor TAG 20 600 thyristor TAG 20 800 m2561 JS168 600R thyristor TAG 800
Untitled Abstract: No abstract text available Text: • b b S a ' O l QQ24b5cl 72T « A P X N APIER P H I L I P S / D I S C R E T E BF570 b7E P 7 V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic SOT-23 variant envelope, intended for use in large-signal handling i.f. pre amplifiers of TV receivers in combination with surface acoustic wave filters.	OCR Scan	PDF	QQ24b5cl BF570 OT-23
bsx20 Abstract: No abstract text available Text: bb53T31 0Q134AS b • BSX19 BSX20 A ~ V - i 5 '- / 5" SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes, primarily intended for high-speed saturated switching and h.f. amplifier applications. QUICK REFERENCE DATA BSX19 BSX20 v CBO	OCR Scan	PDF	bb53T31 0Q134AS BSX19 BSX20 lcb53T31 00124Tb bsx20
BUV98 Abstract: BUV98A BUV98AV BUV98V sot227a Text: I I N AMER PHILIPS/DISCRETE b^E » • bbSB'iai DQSÔSÜ3 Mb3 « A P X BUV98 V BUV98A(V) A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supplies.	OCR Scan	PDF	ABUV98 BUV98A BUV98IV) OT227B BUV98V BUV98 BUV98AV sot227a