BB53S31 Search Results

MRC223

Abstract: BSP130 MRC21B
Contextual Info: Philips Semiconductors bb53S31 0023047 'ìfll B A P X Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 N AMER P H IL IP S /D IS C R E T E FEATURES b7E D QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • No secondary breakdown.

MPSA25

Abstract: npn transistor t12 MPSA75 MPSA76 MPSA77
Contextual Info: fe^E ]> • bb53S31 D02ÔD23 747 MPSA75 MPSA76 MPSA77 N AI1ER PHILIPS/DISCRETE PNP DARLINGTON TRANSISTOR PNP small-signal Darlington transistors, each in a plastic TO-92 envelope. NPN complementary types are MPSA25, 26, and 27. Q UICK REFERENCE D A T A Collector-em itter voltage

BFY90 PHILIPS

Abstract: BFW92 BFW92 sot23 BFS17 BFY90 X3A-BFW92 Philips BFy90 philips bfw92
Contextual Info: Philips Semiconductors _ • bb53S31 0032220 APX 254 Product specification NPN 1 GHz wideband transistor crystal X3A-BFW92 N AMER PHILIPS/DISCRETE DESCRIPTION bRE 3> MECHANICAL DATA Crystal NPN crystal used in BFW 92 SOT37 , BFY90 (TO-72)

Contextual Info: DISCRETE SEMICONDUCTORS P B Y R 10100 se rie s Schottky Barrier rectifier diodes Product specification Fiie under Discrete Semiconductors, SC02 August 1992 Philips Semiconductors PHILIPS bb53S31 0 032^2 A17 Product s pacification Philips Sem iconductor* PBYR10100 series

d0245

Abstract: BCW30 BCW29 IEC134 332 z marking, sot-23
Contextual Info: •I bb53S31 DD^MSbl MTb H A P X N AUER P H I L I P S / D I S C R E T E BCW29 BCW30 b?E ]> SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.

BFG195

Abstract: 5609 transistor transistor 5609 5609 npn transistor 5609 npn 5609 6 LC 0703 transistor 702 Z TRANSISTOR MSB037 5609 t transistor
Contextual Info: Philips Semiconductors bb53S31 □ □ 3 1 3 3 li 314 M APX Product specification NPN 7 GHz wideband transistor — ^ DESCRIPTION BFG195 N AUER PHILIPS/DISCRETE b'lE ]> PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband

Contextual Info: bb53S31 DDEba^l 7bO H A P X N AUER PHILIPS/DISCRETE fc.TE 1N914 1N916 T> HIGH-SPEED SILICON DIODES Planar e p ita x ia l diodes intended fo r general purpose a p p lications. Q U IC K R E F E R E N C E D A T A C o n tinuous reverse voltage Vr max. R epetitive peak reverse voltage

Contextual Info: bb53S31 OQBSEbb IBB « A P X Philips Semiconductors _ Preliminary specification NPN 1 GHz wideband transistor BFS17W N A PIER PHILIPS/DISCRETE DESCRIPTION b7E PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is

Contextual Info: I l b^E D • APX bb53S31 002b544 1T1 A N AMER PHILIPS/DISCRETE BYD11 SERIES CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded SOD-91 ID* envelope, intended for general purpose rectifier applications.

Contextual Info: N AUER PHILIPS/DISCRETE bSE 1> • bb53S31 002clbbb 41S HIAPX I BLY87C A _ V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and

1ehj3

Abstract: BUK581-60A Transistor 8d4
Contextual Info: N AUER PHILIPS/DISCRETE bRE D • bb53S31 DDaDflaQ 604 * A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope

Contextual Info: bb53T31 0055064 36b « A P X P hilips Sem iconductors N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES PINNING BFQ67W PIN CONFIGURATION • High power gain • Low noise figure • High transition frequency 1 • Gold metallization ensures excellent reliability

Contextual Info: BD950; 952 BD954; 956 _ y v SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic TO-220 envelope. With their n-p-n complements BD949; 951; 953 and 955 they are intended for use in a wide range o f power amplifiers and for switching applications.

Contextual Info: N AUER PHILIPS/DISCRETE bSE D bbsa^ai □ D27bBL bSb IAPX D r BF422 SILICON EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelope primarily intended fo r class-B video output stages in colour television and professional monitor equipment. P-N-P complements are BF421 and BF423.

BCW69

Abstract: BCW70 IEC134 marking 2rr
Contextual Info: •I bbSBTBl ÜDSMSêl 5=54 H A P X N AMER PHILI P S / D I S C R E T E BCW69 BCW70 b?E ]> SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a m icro m in ia tu re plastic envelope, intended fo r lo w level general purpose a p p li­ cations in th ic k and th in -film circuits.

QS 100 NPN Transistor

Abstract: transistor BFR93 L7E transistor BFR93 BFR91 BFT93 BFR91 NPN 6 GHz Wideband Transistor
Contextual Info: • P hilips Sem iconductors •— bb S3 T3 1 D0 25 17 5 254 « A P X N AUER P H I L I P S / D I S C R E T E Product specification b7E NPN 5 GHz wideband transistor DESCRIPTION fc BFR93 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use

1521 n-p-n

Abstract: BSR17A IEC134 BSR17A equivalent
Contextual Info: • bbS3T31 N AMER 0025577 7 50 H A P X PHILIPS/DISCRETE b7E BSR17A D _y v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon tran sisto r in a m ic ro m in ia tu re plastic envelope intended fo r sw itching and linear applii tio n s in th ic k and th in -film circuits.

2N4393

Abstract: 2N4392 2N4391 transistor 4393
Contextual Info: 2N4391 to 4393 J ' - N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes with the gate connected to the case. The transistors are intended for low power, chopper or switching,

potentiometer 502 TJ

Abstract: BLF276 mra843
Contextual Info: Philips Semiconductors 00300GÔ □□□ I A P X eliminary specification BLF276 VHF power MOS transistor N AMER PHILIPS/DISCRETE LIE J> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability DESCRIPTION Silicon N-channel enhancement

transistor n53

Abstract: BC869-10
Contextual Info: bbS3^31 00244*13 N AUER PHILIPS/DISCRETE • APX BC869 b?E D y v SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic microminiature envelope, intended for low-voltage, high-current l.f. applications. BC868/BC869 is the matched complementary pair suitable fo r class-B audio output

Contextual Info: bbsa'm Philips Sem iconductors 0024012 2T2 • a p x N-channel silicon field-effect transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections

bd950

Abstract: 80954 b0952 B0950 BD949 BD954 USA060-1
Contextual Info: BD950; 952 BD954; 956 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. W ith the ir n-p-n complements BD949; 951; 953 and 955 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.

smd 2t1

Abstract: PMBTA64 smd transistor 2t1 MARKING CODE SMD IC marking p2U PMBTA63 2T1 SOT-23 sot-23 MARKING CODE 2T1
Contextual Info: • bbSBTai □□2SficlLi 355 M A P X N AMER P HI L IP S/DI SCRETE PMBTA63 PMBTA64 b?E i> P-N-P SMALL-SIGNAL DARLINGTON TRANSISTORS P-N-P small-signal da rlin g to n transistors in a m icro m in ia tu re SM D envelope SOT-23 . Designed p rim a rily fo r p re a m p lifie r in p u t a pplications requiring high in p u t impedance.

BC550

Abstract: BC549 BC550 equivalent BC550C Amplifier with transistor bc549 bc550 noise figure bc549 equivalent TBC549 BC550C equivalent bub49
Contextual Info: N AMER PHILIPS/DISCRETE b^E » • btS3T31 G0575bb 7ST * A P X A B U b4y BC550 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, prim arily intended fo r low-noise input stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.