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    BB504 Search Results

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    BB504 Price and Stock

    Rochester Electronics LLC BB504CDS-TL-H

    RF MOSFET
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    DigiKey BB504CDS-TL-H Bulk 1,249
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    TT electronics / BI Technologies P166P10F3BB504

    PANEL ROTARY POTENTIOMETER
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    DigiKey P166P10F3BB504 Tray 4,800
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    Sager P166P10F3BB504 1,600
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    TT electronics / BI Technologies P166H10F3BB504

    PANEL ROTARY POTENTIOMETER
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    DigiKey P166H10F3BB504 Tray 4,800
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    Sager P166H10F3BB504 1,600
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    TT electronics / BI Technologies P166P11F6BB504

    PANEL ROTARY POTENTIOMETER
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    DigiKey P166P11F6BB504 Tray 4,800
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    Sager P166P11F6BB504 1,600
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    TT electronics / BI Technologies P166V10F2BB504

    PANEL ROTARY POTENTIOMETER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey P166V10F2BB504 Tray 4,800
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    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.06454
    Buy Now
    Sager P166V10F2BB504 1,600
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    BB504 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BB504 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BB504C Hitachi Semiconductor Bias Controlled Monolithic IC UHF RF Amplifier Original PDF
    BB504C Renesas Technology Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Original PDF
    BB504C Renesas Technology Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Original PDF
    BB504C-E Renesas Technology Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Original PDF
    BB504M Hitachi Semiconductor Bias Controlled Monolithic IC UHF RF Amplifier Original PDF
    BB504M Renesas Technology MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.15; |yfs| (S) typ: 0.029; PG (dB) typ: 22; Ciss (pF) typ: 2.1; NF (dB) typ: 1.75; IDSS (mA): -; Package: MPAK-4 Original PDF
    BB504M Renesas Technology Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Original PDF

    BB504 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode MARKING CODE 917

    Abstract: marking code g1s 1SV70 BB504C DSA003645
    Text: BB504C Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier ADE-208-983D Z 5th. Edition Dec. 2000 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz


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    PDF BB504C ADE-208-983D OT-343mod) BB504C diode MARKING CODE 917 marking code g1s 1SV70 DSA003645

    BB504CDS-TL-E

    Abstract: BB504CDS 1SV70 BB504C
    Text: BB504C Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier REJ03G0836-0600 Previous ADE-208-983D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz


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    PDF BB504C REJ03G0836-0600 ADE-208-983D) OT-343mod) PTSP0004ZA-A BB504C BB504CDS-TL-E BB504CDS 1SV70

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB504M R07DS0286EJ0800 Previous: REJ03G0837-0700 Rev.8.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz


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    PDF BB504M R07DS0286EJ0800 REJ03G0837-0700) OT-143Rmod) PLSP0004ZA-A BB504M

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB504C R07DS0285EJ0700 Previous: REJ03G0836-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz


    Original
    PDF BB504C R07DS0285EJ0700 REJ03G0836-0600) OT-343mod) PTSP0004ZA-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB504C R07DS0285EJ0700 Previous: REJ03G0836-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz


    Original
    PDF BB504C R07DS0285EJ0700 REJ03G0836-0600) OT-343mod) PTSP0004ZA-A BB504C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB504M R07DS0286EJ0800 Previous: REJ03G0837-0700 Rev.8.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz


    Original
    PDF BB504M R07DS0286EJ0800 REJ03G0837-0700) OT-143Rmod) PLSP0004ZA-A

    1SV70

    Abstract: BB504M L1103 kk20 AB5S
    Text: BB504M Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier REJ03G0837-0700 Previous ADE-208-982E Rev.7.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz


    Original
    PDF BB504M REJ03G0837-0700 ADE-208-982E) OT-143Rmod) PLSP0004ZA-A BB504M 1SV70 L1103 kk20 AB5S

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB504M R07DS0286EJ0800 Previous: REJ03G0837-0700 Rev.8.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz


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    PDF BB504M R07DS0286EJ0800 REJ03G0837-0700) OT-143Rmod) PLSP0004ZA-A

    ADE-208-982E

    Abstract: GR 733 diode MARKING CODE 917 1SV70 BB504M DSA003645
    Text: BB504M Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier ADE-208-982E Z 6th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF = 1.75 dB typ. at f =900 MHz


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    PDF BB504M ADE-208-982E OT-143Rmod) BB504M ADE-208-982E GR 733 diode MARKING CODE 917 1SV70 DSA003645

    diode BB102

    Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


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    PDF ADE-A08-003G diode BB102 RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet

    HAT1058C

    Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,


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    PDF notic50 SON3024-8 HAT1062G ADE-A08-003Q HAT1058C HAT2106G HAT1068C Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


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    PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


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    PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    1SV70

    Abstract: BB504C
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


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    PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    1SV70

    Abstract: BB504M
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


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    PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


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    PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


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    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


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    PDF HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


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    PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


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    PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    1SV70

    Abstract: BB504M
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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