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    BAY60 Search Results

    BAY60 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BAY60 International Semiconductor Rectifier Diode, Switching Diode, Single, 150V, SOD-27, 2-Pin Scan PDF
    BAY60 International Semiconductor SWITCHING DIODE Scan PDF
    BAY60 Microsemi (BAYxx) Switching Scan PDF
    BAY60 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BAY60 Unknown Cross Reference Datasheet Scan PDF
    BAY60 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BAY60 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BAY60 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BAY60 Siemens Semiconductor Manual, Discrete Industrial Types 1974 Scan PDF
    BAY60 Unitrode International Semiconductor Data Book 1981 Scan PDF

    BAY60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original
    5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    1N4548

    Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
    Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A


    Original
    1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428 PDF

    BAY41

    Abstract: BAY43 bax12 BAY42
    Text: COMPUTER DIODE BAY41-BAY43 BAY60 BAX 12 Switching FEATURES DESCRIPTION • Metallurgical Bond • Planar Passivated This series offers Metallurgical Bonding and is very popular for general purpose switching applications. • 00-35 ABSOLUTE MAXIMUM RATINGS. AT 25°C


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    BAY41-BAY43 BAY60 BAY41 BAY42 BAY43 BAX12 225mA bax12 PDF

    BAX12

    Abstract: bay43
    Text: Erosemi corp/ uatertoun 5üe d Switching <1347^3 0012377 524 • U N I T BAY41-BAY43 BAY60 BAX 12 FEATURES • Metallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers Metallurgical Bonding and Is very popular for general purpose switching applications.


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    DO-35 BAY41-BAY43 BAY60 BAY41 BAY42 BAY43 225mA 100mA 200mA 400mA BAX12 PDF

    bay41-bay43

    Abstract: BAY41 BAY42 BAY43 BAY60
    Text: COMPUTER DIODE BAY41-BAY43 BAY60 Switching FEATURES • Metallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers Metallurgical Bonding and is very popular for general purpose switching applications. ABSOLUTE MAXIMUM RATINGS, AT 25°C


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    BAY41-BAY43 BAY60 DO-35 BAY41 225mA 600mA BAY42 BAY43 225mA. BAY41 BAY60 PDF

    Untitled

    Abstract: No abstract text available
    Text: SWITCHING DIODES, GLASS PACKAGE Cent rmou* Forward Capacitance Reverse Rev Peak Voltage C Recovery Package ts i Dissipation Voltage Ctrl rent Drop Maximum Time Quantities Part P. fmW V, Volts) 1. ("A ) V, (Volta) V, (Volts) 1. {mAj Number (PF> T,. (nS) Hulkmeel


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    1N4149 MMBD4201 BD1202 BD1283 BD1204 MMBD4448 OT-23 PDF

    BAW75

    Abstract: BAY60 BAY63
    Text: BAY 60, BAY 63 Not for new developm ent Silicon planar logic diodes Silicon planar diodes B A Y 60 and B A Y 63 are designed for use as high-speed switches in computers, as well as for general switching applications. Small reverse recovery times, low capacitance and limited spread in the characteristics, coupled


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    Q60201-Y BAY60 BAW75 BAY60 BAY63 PDF

    Diode BAY 80

    Abstract: BAY72 Diode BAY 72 34696 BAY80 BAY 80 diode
    Text: FAIRCH IL D SE MI CO NDU CTO R S4 i F| DaBTBlb E J~- 3469 674 T A I R C H I U D ”SE MI C O N D U C T O R g g fg g ^ T S 84D 27296 BAY72/BAY80 - A Schlum berger C om pany T. PACKAGES BAY72 BAY80 ABSOLUTE MAXIMUM RATINGS N ote 1) T e m p e ra tu re s S torage Tem perature Range


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    BAY72/BAY80 BAY72) Diode BAY 80 BAY72 Diode BAY 72 34696 BAY80 BAY 80 diode PDF

    in5282

    Abstract: bax13 1N3064 1N3600 1N4009 1N4148 1N4149 1N914 J 1N4151 1N914B
    Text: SWITCHING DIODES, GLASS PACKAGE Continuous liiS il! N um ber a m W Vi„IVqH s> C a p a c ita n ce R e v e r s e C. R e c o v e ry PatKaga Time Quantities Maximum Forw ard Voltage Drop Pow er Dissipation l É s i s g f í í i, in A) V (V o lts) V (V o lt 1 1 (mA|


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    1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 in5282 bax13 1N4149 J 1N4151 PDF

    diode BA170

    Abstract: 1N4009 bax13 diode 1n4009 BA170 1N4376 1N3600 1N4148 1N914 1N914A
    Text: I n t e r n a t/ o n a l S e m ic o n d u c t o r , I n c . 1N914 GENERAL PURPOSE SWITCHING DIODES And Other Signal Diodes DIFFUSED SILICON PLANAR f IS I P a rt Number 1N 914 1N914A 1N914B Max Power Dissipation Peak Note 1 Voltage P D (m W ) 250 Continuous


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    1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 diode BA170 bax13 diode 1n4009 BA170 1N4376 1N4148 1N914 PDF

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82 PDF

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


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    Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367 PDF

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


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    A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17 PDF

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


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    bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G PDF