BASE OF S9014 TRANSISTOR Search Results

BASE OF S9014 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TMPM3HMFYAFG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003
TMPM3HPFYADFG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001
TMPM3HLFYAUG	Toshiba Electronic Devices & Storage Corporation	Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003

BASE OF S9014 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
s9014 equivalent Abstract: transistor S9014 S9014 s9014 Transistor s9014 transistor datasheet transistor npn s9014 Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 S9014 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts Tamb=25 OC of Power Dissipation. Collector-current 0.1A Collector-base Voltage 50V	Original	PDF	S9014 -55OC 100mAdc, 10mAdc, 30MHz) s9014 equivalent transistor S9014 S9014 s9014 Transistor s9014 transistor datasheet transistor npn s9014
s9014 equivalent Abstract: S9014 S9014 TO92 S9014 datasheet S9014 TRANSISTORS S-9014 Text: S9014 NPN General Purpose Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC Value 45 50 5.0 100	Original	PDF	S9014 100uAdc, 30MHz) 270TYP s9014 equivalent S9014 S9014 TO92 S9014 datasheet S9014 TRANSISTORS S-9014
s9014 Abstract: No abstract text available Text: S9014 NPN General Purpose Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO	Original	PDF	S9014 100uAdc, 30MHz) 270TYP s9014
S9014 Abstract: transistor SOT23 J6 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	PDF	OT-23 S9014 OT-23 S9015 30MHz S9014 transistor SOT23 J6
s9014 Abstract: S9014 TO92 s9015 Text: S9014 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO	Original	PDF	S9014 S9015 100mA, 30MHz S9014 TO92 s9015
transistor S9014 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	PDF	OT-23 S9014 OT-23 S9015 30MHz transistor S9014
transistor SOT23 J6 Abstract: transistor S9014 S9014 SOT-23 j6 sot23 J6 transistor j6 transistor sot-23 SOT-23 j6 transistor npn s9014 S9014 J6 J6 SOT 23 Text: S9014 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9015 MARKING: J6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	PDF	S9014 OT-23 OT-23 S9015 30MHz transistor SOT23 J6 transistor S9014 S9014 SOT-23 j6 sot23 J6 transistor j6 transistor sot-23 SOT-23 j6 transistor npn s9014 S9014 J6 J6 SOT 23
transistor SOT23 J6 Abstract: S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	PDF	OT-23 S9014 OT-23 S9015 30MHz transistor SOT23 J6 S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6
transistor S9014 Abstract: s9014 equivalent s9014 transistor S9014 Text: S9014 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES TO-92 Power dissipation o P CM :0.4 W (Tamb=25 C) Collector current I CM :0.1 A Collector-base voltage V (BR)CBO :50 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C	Original	PDF	S9014 160uA 140uA 120uA 100uA transistor S9014 s9014 equivalent s9014 transistor S9014
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High total power dissipation.(PC=0.45W) z High hFE and good linearity z Complementary to S9015 2. BASE 3. COLLECTOR	Original	PDF	S9014 S9015 100mA, 30MHz
transistor S9014 Abstract: s9014 s9014 equivalent transistor -s9014 s9014 transistor transistor TO-92 S9015 S9014 TO92 S9015 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High total power dissipation.(PC=0.45W) z High hFE and good linearity z Complementary to S9015 2. BASE 3. COLLECTOR	Original	PDF	S9014 S9015 100mA, 30MHz transistor S9014 s9014 s9014 equivalent transistor -s9014 s9014 transistor transistor TO-92 S9015 S9014 TO92 S9015
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High Total Power Dissipation.(PC=0.45W) z High hFE and Good Linearity z Complementary to S9015 2. BASE 3. COLLECTOR	Original	PDF	S9014 S9015
BR 9014 Abstract: BR 9014 c BR 9014 transistor transistors BR 9014 TRANSISTOR 9014 S9014 V. 9014 c 9014 Text: TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. BASE 0.4 W (Tamb=25℃) 3. COLLECTOR Collector current 0.1 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range	Original	PDF	S9014 BR 9014 BR 9014 c BR 9014 transistor transistors BR 9014 TRANSISTOR 9014 S9014 V. 9014 c 9014
s9015 transistor Abstract: s9015 to92 s9014 equivalent transistor TO-92 S9015 S9014 S9015 s9015 equivalent transistor S9015 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors TO-92 S9015 TRANSISTOR PNP 1.EMITTER FEATURES z High total power dissipation.(PC=0.45W) z High hFE and good linearity z Complementary to S9014 2. BASE 3. COLLECTOR 1 2 3	Original	PDF	S9015 S9014 -100A, -100mA, -10mA 30MHz s9015 transistor s9015 to92 s9014 equivalent transistor TO-92 S9015 S9014 S9015 s9015 equivalent transistor S9015

S9015 SOT-23 Abstract: m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	PDF	OT-23 S9015 OT-23 S9014 -100A, -100mA, -10mA S9015 SOT-23 m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015
S9015 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	PDF	OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz S9015
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	PDF	OT-23 S9014 OT-23 S9015 30MHz
s9015 Abstract: No abstract text available Text: S9015 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9014 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO	Original	PDF	S9015 S9014 -100A, -100mA, -10mA -10mA 30MHz
m6 marking transistor sot-23 Abstract: sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6 Text: S9015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9014 MARKING: M6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	PDF	S9015 OT-23 OT-23 S9014 -100A, -100mA, -10mA m6 marking transistor sot-23 sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors TO-92 S9015 TRANSISTOR PNP 1.EMITTER FEATURES z High Total Power Dissipation.(PC=0.45W) z High hFE and Good Linearity z Complementary to S9014 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	PDF	S9015 S9014 -100mA, -10mA 30MHz
s9014 transistor Abstract: transistor TO-92 S9014 s9014 equivalent datasheet of ic 555 S9014 s9014 datasheet S9014transistor Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 0.4 W（Tamb=25℃） Collector current ICM : 0.1 A Collector-base voltage V BR CBO : 50 V Operating and storage junction temperature range	Original	PDF	S9014 O--92 30MHz 270TYP 050TYP s9014 transistor transistor TO-92 S9014 s9014 equivalent datasheet of ic 555 S9014 s9014 datasheet S9014transistor
triac zd 607 Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published	OCR Scan	PDF	thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p

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BASE OF S9014 TRANSISTOR Result Highlights (5)

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s9014 equivalent

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transistor SOT23 J6

transistor S9014

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transistor S9014

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BR 9014

s9015 transistor

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S9015

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s9015

m6 marking transistor sot-23

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s9014 transistor

triac zd 607