BAS21 PIN CONFIGURATION Search Results

bas19

Abstract: BAS20 BAS21 BAS21 A82
Contextual Info: BASI9 BAS20 BAS21 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon planar epitaxial high-speed diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M arking BAS19 = A8 BAS20 = A81 BAS21 = A82 _3.0_ 2.8 0.48 0.38 0.14 0.09 0.70 0.50 Pin configuration 1 = ANODE

BAS21 SOD323

Abstract: BAS21-03W
Contextual Info: BAS21-03W 2 Silicon Switching Diode 1
For high-speed switching applications
High breakdown voltage VPS05176 Type BAS21-03W Marking D Pin Configuration 1=C 2=A Package SOD323 - Maximum Ratings Parameter Symbol Diode reverse voltage VR 200 Peak reverse voltage-

BAS21

Abstract: BAS20 BAS19 BAS21 A82 bas21 lp
Contextual Info: BASI 9 BAS20 BAS21 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon planar epitaxial high-speed diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M arking BAS19 = A8 BAS20 = A81 BAS21 = A82 _3.0_ 2.8 3 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 0.14

BAS21 SOT23

Abstract: BAS21 BAS20 diode 2U BAS21 A82 BAS19 BAS21A82 Diode a82 10 SOT23 BAS21 pin configuration
Contextual Info: BAS19 BAS20 BAS21 BAS19 BAS20 BAS21 SOT23 SILICON HIGH SPEED SWITCHING DIODE ISSUE 2 – JANUARY 1995 SWITCHING TIME TEST DATA PIN CONFIGURATION  Recovery Time Equivalent Test Circuit Pulse Generator DUT ! 10% SOT23 ABSOLUTE MAXIMUM RATINGS. tp tot 90% 3

Contextual Info: BAS19 BAS20 BAS21 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon planar epitaxial high-speed diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BAS19 = A8 BAS20 = A81 BAS21 = A82 _3.0_ 2.8 0.14 0.48 0.38 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE

Contextual Info: Transys Electronics L I M I T E D SILICON PLANAR HIGH SPEED DIODES BAS19, BAS20, BAS21 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS19 = A8 BAS20 = A81 BAS21 = A82 High-Speed Switching Diodes in a Microminiature Plastic Envelope.

A82 SMD

Abstract: smd A81 marking A82 SOT-23 BAS21 SOT-23 smd diode A82 smd marking A8 BAS19 BAS20 BAS21 SOT-23 marking a8
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR HIGH SPEED DIODES BAS19, BAS20, BAS21 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS19 = A8 BAS20 = A81 BAS21 = A82 High-Speed Switching Diodes in a Microminiature Plastic Envelope.

smd A81

Abstract: BAS21 SOT-23 A82 SMD smd diode A82 smd marking A8 BAS19 BAS20 BAS21
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR HIGH SPEED DIODES BAS19, BAS20, BAS21 SOT-23 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS19 = A8 BAS20 = A81 BAS21 = A82

BAS20 SOT23

Abstract: bas21 jss BAS19 BAS20 BAS21
Contextual Info: BAS19.BAS21 3 Silicon Switching Diodes
High-speed, high-voltage switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking Pin Configuration Package BAS19 JPs 1=A 2 = n.c. 3=C SOT23 BAS20 JRs 1=A 2 = n.c. 3=C SOT23 BAS21 JSs 1=A 2 = n.c. 3=C SOT23 Maximum Ratings

Contextual Info: BASI 9 BAS20 BAS21 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon p la n a r epitaxial high-speed diodes P A C K A G E O U T L IN E DETAILS ALL D IM E N S IO N S IN m m M a rk in g BA ST9 = AB BAS20 = A81 BAS21 = A82 3.0 2.8 0.48 0.38 3 Pin configuration

Contextual Info: BAS 19 BAS20 BAS21 SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODES PIN CONFIGURATION P A R T M A R K IN G D E TA ILS A BAS19 A8 B A S 2 0 . A 8 1 B A S 2 1 .A 8 2 3 ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L C ontin uou s Reverse V oltag e

BAS21 SOD323

Abstract: marking JSs BAS21 BAS21 SOT23 Marking code jSs BAS21U JSs marking code 65 marking sot23 marking code ag BAR63-03W
Contextual Info: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage BAS21 BAS21-03W BAS21U $ ! ,     " # , , ! ! Type Package Configuration Marking BAS21 BAS21-03W BAS21U SOT23 SOD323 SC74 single single parallel triple

Marking code jSs

Abstract: BAS21 SOD323 BAS21 JSs marking code BAS21 SOT23 bas21 infineon BAS21-03W BAS21U BCW66H SC74
Contextual Info: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS21 BAS21-03W BAS21U $ ! ,     " # , , ! ! Type Package Configuration Marking

Contextual Info: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS21 BAS21-03W BAS21U $ ! " # ,  , , !    ! Type Package Configuration Marking

JJ SOT23

Abstract: 0A81 IR100
Contextual Info: BAS19 BAS20 BAS21 SWITCHING TIME TEST DATA Recovery Time Equivalent Test Circuit Pulse Generator DUT Sampling Oscilloscope Rin =50n RS =50fi +|F trr t Input Signal Output Signal Input Signal Reverse Pulse Duration tp 100ns Rise Tim e tr 0.35ns C ircuit Capacitance*

BAS20

Contextual Info: BASI9 BAS20 BAS21 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon planar epitaxial high-speed diodes PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN mm Marking BAS19 = A8 BAS20 = A81 BAS21 = A82 _3.0_ 2.8 0.14 - " ^ 0.09 0.48 03§ 1 = ANODE 2 = NC 3 = CATHODE

Diode SOT-23 marking Js

Abstract: DIODE JS4 Js SMD MARKING CODE SOT23 smd diode JS
Contextual Info: BAS21 / A / C / S 225mW SMD Switching Diode Small Signal Diode SOT-23 A Features F B E ­Fast switching speed ­Surface device type mounting C ­Moisture sensitivity level 1 G D ­Matte Tin Sn lead finish with Nickel(Ni) underplate ­Pb free version and RoHS compliant

Js SMD MARKING CODE SOT23

Abstract: DIODE JS4 smd code marking js Js MARKING CODE SOT23 smd diode JS smd JS marking code js "MARKING CODE JS" JS3 SOT23 Diode marking CODE JS
Contextual Info: BAS21 / A / C / S 225mW SMD Switching Diode Small Signal Diode SOT-23 A Features F B E —Fast switching speed —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate —Pb free version and RoHS compliant

06035C103KAT2A

Abstract: E4 PNP SMD TRANSISTOR transistor P18 FET 1nF, 50V, AVX Corporation c86 sot23 Cap X7R 1210 T4 LTC3706EGN pa1494.242 TMK325BJ475KN 16TQC68M
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 888A-C 36V-72VIN, ISOLATED SYNCHRONOUS FORWARD LTC3725/LTC3706 DESCRIPTION Demonstration circuit 888A-C is a high power isolated synchronous forward converter featuring the LTC3725 and LTC3706. When powered from a 3672V input, a single DC888A-C provides an isolated

A82 SMD

Abstract: BAS19 BAS20 BAS21 smd A81
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BAS19 BAS20 BAS21 SILICON PLANAR EPITAXIAL HIGH–SPEED DIODES Silicon planar epitaxial high-speed diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

A82 SMD

Abstract: smd diode A82 smd A81 smd marking A8 BAS19 BAS20 BAS21
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BAS19 BAS20 BAS21 SILICON PLANAR EPITAXIAL HIGH–SPEED DIODES Silicon planar epitaxial high-speed diodes

DATA SHEET IC CD4011

Abstract: IC cd4011 D306A cd4011 datasheet L1514 CD4011 D033 1N4148 BAS21 D03316
Contextual Info: Data Sheet D306A Electroluminescent Lamp Driver IC General Description The Durel D306A is a high-power IC inverter intended for driving EL lamps as large as 180 cm2. The D306A IC is equipped with many control functions, including: waveshapingTM programmability for minimizing audible noise, and

TRANSISTOR 2N2222

Abstract: 2200uf capacitor NPN transistor 2n2222 AN180 IRFS23N15D MJD340 X80000 DC-DC Converters 0.25W 2N2222 circuit 2200uf 35v SM series
Contextual Info: Using the X80070 in an Advanced TCA Application Application Note December 1, 2004 AN180.0.0 Author: Carlos Martinez Introduction This application note describes one possible implementation of an Advanced TCA PICMG 3.x power supply control. This particular implementation shows the power on control of one

transistor P18 FET

Abstract: PA1954NL KFH-032-6 TEPSLV0J227M c86 sot23 PA0955 transistor SMD p16 PA1382 Q12-Q15 DC888A
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 888A-B 36V-72VIN, ISOLATED SYNCHRONOUS FORWARD LTC3725/LTC3706 DESCRIPTION Demonstration circuit 888A-B is a high power isolated synchronous forward converter featuring the LTC3725 and LTC3706. When powered from a 3672V input, a single DC888A-B provides an isolated