DS1212
Abstract: DS1222 DS1222S
Text: DS1222 BankSwitch Chip www.dalsemi.com FEATURES Provides bank switching for 16 banks of memory Bank switching is software-controlled by a pattern recognition sequence on four address inputs Automatically sets all 16 banks off on power-up Bank switching logic allows only one bank on
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Original
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DS1222
16-pin
DS1222
DS1212
DS1222S
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Untitled
Abstract: No abstract text available
Text: DS1222 BankSwitch Chip www.dalsemi.com FEATURES Provides bank switching for 16 banks of memory Bank switching is software-controlled by a pattern recognition sequence on four address inputs Automatically sets all 16 banks off on power-up Bank switching logic allows only one bank on
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Original
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DS1222
16-pin
DS1222
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Untitled
Abstract: No abstract text available
Text: 2 MEG x 16 ASYNC/PAGE FLASH MEMORY FLASH MEMORY MT28F322P3 LOW VOLTAGE, EXTENDED TEMPERATURE Features • Flexible dual-bank architecture Support for true concurrent operation with zero latency Read bank a during program bank b and vice versa Read bank a during erase bank b and vice versa
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Original
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09005aef808cfe29
MT28F322P3FJ
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 MEG x 16 ASYNC/PAGE FLASH MEMORY FLASH MEMORY MT28F322P3 Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture Support for true concurrent operation with zero latency Read bank a during program bank b and vice versa Read bank a during erase bank b and vice versa
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Original
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MT28F322P3
MT28F322P3FJ
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 MEG x 16 ASYNC/PAGE FLASH MEMORY FLASH MEMORY MT28F322P3 LOW VOLTAGE, EXTENDED TEMPERATURE Features • Flexible dual-bank architecture Support for true concurrent operation with zero latency Read bank a during program bank b and vice versa Read bank a during erase bank b and vice versa
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Original
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MT28F322P3FJ
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PDF
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FX222
Abstract: FX223
Text: 2 MEG x 16 PAGE FLASH MEMORY FLASH MEMORY MT28F321P2FG Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa – Read bank a during erase bank b and vice versa
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Original
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100ns
110ns
100ns/110ns
35ns/45ns.
MT28F321P2FG
FX222
FX223
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 MEG x 16 PAGE FLASH MEMORY FLASH MEMORY MT28F321P2FG Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa – Read bank a during erase bank b and vice versa
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Original
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MT28F321P2FG
100ns
110ns
MT28F321P2FG
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PDF
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A13L
Abstract: IDT707288 R3592
Text: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks
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Original
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IDT707288S/L
16-bit
IDT707288
100-pin
PN100-1)
A13L
IDT707288
R3592
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PDF
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A12L
Abstract: A13L IDT707288 707288
Text: HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks
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Original
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IDT707288S/L
16-bit
100-pin
PN100-1)
A12L
A13L
IDT707288
707288
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PDF
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ci 4077
Abstract: A12L A13L IDT70V7288
Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks
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Original
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IDT70V7288S/L
16-bit
100-pin
PN100-1)
70V7288
ci 4077
A12L
A13L
IDT70V7288
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PDF
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A12L
Abstract: IDT70V7278 register with truth table
Text: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. ADVANCED IDT70V7278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 8K x 16 banks
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Original
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IDT70V7278S/L
16-bit
IDT70V7278
100-pin
PN100-1)
70V7278
A12L
IDT70V7278
register with truth table
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PDF
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A12L
Abstract: IDT70V7278
Text: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 8K x 16 banks
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Original
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IDT70V7278S/L
16-bit
x1DT70V7278S/L
100-pin
PN100-1)
70V7278
512Kbit
A12L
IDT70V7278
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PDF
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A13L
Abstract: IDT70V7288
Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. ADVANCED IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks
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Original
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IDT70V7288S/L
16-bit
IDT70V7288
100-pin
PN100-1)
70V7288
A13L
IDT70V7288
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PDF
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A12L
Abstract: A13L IDT70V7288 4077 cmos
Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks
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Original
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IDT70V7288S/L
16-bit
x1670V7288S/L
100-pin
PN100-1)
70V7288
A12L
A13L
IDT70V7288
4077 cmos
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PDF
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O10L
Abstract: A12L IDT70V7278 "32K x 16" dual port SRAM O8L-15L
Text: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 8K x 16 banks
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Original
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IDT70V7278S/L
16-bit
x1IDT70V7278S/L
100-pin
PN100-1)
70V7278
512Kbit
O10L
A12L
IDT70V7278
"32K x 16" dual port SRAM
O8L-15L
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PDF
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TN219
Abstract: 0xa8000 TN238 TN241 0X55000 0xC0000
Text: TN241 Accessing Large Memories and Bank-Switching with the Rabbit This Technical Note describes memory bank-switching using the Rabbit microprocessor. Bank-switching is needed to map memory devices beyond the current 1MB limit* imposed by the Dynamic C compiler and
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Original
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TN241
TN241
TN202,
TN219,
TN238,
TN219
0xa8000
TN238
0X55000
0xC0000
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PDF
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EM73A88
Abstract: No abstract text available
Text: Notation for Program ROM 1. ROM bank switched by P3. P3 0.3 0000 0001 0010 0011 0100 0101 0110 0000~0FFFh Bank 0 1000-lFFFh Bank 1 Bank 2 Bank 3 Bank 4 Bank 5 Bank 6 Bank 7 2. You only can branch to different bank form bank 0. 3. For example, we do not allow branch from bank 1 to bank 2.
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OCR Scan
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1000-lFFFh
EM73A88,
EM73A88
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7278S/L Features 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture * processor communications; interrupt option Interrupt flags with programmable masking
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OCR Scan
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IDT70V7278S/L
100-pin
16-bit
eac16
MO-136,
492-M
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L Features 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture processor communications; interrupt option Interrupt flags with programmable masking
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OCR Scan
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IDT70V7288S/L
100-pin
16-bit
O-136,
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PDF
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks
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OCR Scan
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IDT707288S/L
16-bit
32-bit
IDT707288
100-pin
PN100-1)
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PDF
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Untitled
Abstract: No abstract text available
Text: I * / Integrated Device Technology, Inc. HIGH-SPEED 64K X 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks
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OCR Scan
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IDT707288S/L
16-bit
IDT707288
IDT707288S/L
100-pin
PN100-1)
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PDF
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Untitled
Abstract: No abstract text available
Text: I dt Integrated Device Technology, Inc. HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 8K x 16 banks
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OCR Scan
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IDT707278S/L
16-bit
IDT707278
IDT707278
IDT707278S/L
100-pin
PN100-1)
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PDF
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IN 4077
Abstract: IC 4077 910UB
Text: \dt Integrated Device Technology, Inc. HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks
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OCR Scan
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IDT70V7288S/L
16-bit
IDT70V7288
IDT70V7288S/L
100-pin
PN100-1)
70V7288
IN 4077
IC 4077
910UB
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PDF
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V727
Abstract: ce1111
Text: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS I dt Integrated Device Technology, Inc. PRELIMINARY IDT70V7278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 8K x 16 banks
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OCR Scan
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IDT70V7278S/L
16-bit
IDT70V7278
100-pin
PN100-1
70V7278
512Kbit
V727
ce1111
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PDF
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