BAE 86 Search Results

OSD 9616

Abstract: Remocon 558 ic HS 2272 bpl TV vERTICAL SECTION CIRCUIT DIAGRAM TB 1226 EN HYNIX 512 Mbit 10069 14069 U EIA-608 HMS81C4260
Contextual Info: HYNIX SEMICONDUCTOR INC. 8-BIT SINGLE-CHIP MICROCONTROLLERS HMS81C4x60 User’s Manual Ver. 1.1 Version 1.1 Published by MCU Application Team Heung-il Bae(hibae@hynix.com), Byoung-jin Lim( bjinlim@hynix.com) 2001 Hynix Semiconductor Inc. All rights reserved.

JN1123

Abstract: Radiall connector Radiall Crimp 02 MIL-C-83527 radiall connector, receptacle MIL-C-83527 contacts
Contextual Info: TCX* SERIES - BAE JN1123 Connector for use on the Eurofighter / Typhoon Aircraft - Designed for L-shaped boxes. - 5 shell sizes with environmental sealing and metal to metal bottoming. - Field replaceable inserts. - Ground spring on the plug shell providing

rad750 user manual bae

Abstract: bae rad750 RAD750 RAD750 processor 234A524 RAD750 3U single board computer IEC-1076-4-101 RAD750 software reference manual wedgelock mil-b-5087
Contextual Info: RAD750• Board Hardware Specification Document Number 234A524 Release Date August 1, 2000 Copyright by BAE SYSTEMS All Rights Reserved Document Number: 234A524 RAD750 CompactPCI Hardware Specification Notices Before using this information and the product it supports, be sure to read the general information on the

Contextual Info: DC-DC Converter Bricks, Open/Enclosed BAE SERIES, 1/8 BRICK, UP TO 150W FEATURES: 5 year warranty Output current up to 30A 1500Vdc isolation voltage Efficiency up to 93% Operating temperature range -40 ℃ to +85 ℃ Under voltage, over current, short circuit,

nas620

Abstract: RAD750 Uralane 5753 Uralane 5750 RAD750 processor RAD6000 bae rad750 rad750 user manual bae RAD750 software reference manual Calmark
Contextual Info: RAD750 Board Hardware User's Manual Document Number 234A533 Release Date December 20, 2000 Copyright by BAE SYSTEMS All Rights Reserved Document #: 234A533 RAD750 3U CompactPCI Hardware Users Manual Notices Before using this information and the product it supports, be sure to read the general information on the

TB 2929 H

Abstract: i486sx 82424TX LT3112 i486sx intel idt 256kb cache intel 486 dx 33mhz P6135
Contextual Info: INTEGRATED DE VI CE baE • 4 3 5 5 77 1 D O m S b n 128KB/256KB/512KB SECONDARY CACHE MODULES FOR THE INTEL* i486 CPU/82420TX PCI SET Sib ■ PRELIMINARY IDT7MP6133 Id™ ! « ¡SESSIS IDT7MP6153 FEATURES DESCRIPTION • 128KB/256KB/512KB secondary cache m odule family

bd 8h

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mp6119

Contextual Info: INTEGRATE» DEVICE baE D • 4A5S771 00145144 373 M IDT 128KB/256KB SECONDARY CACHE MODULE FOR THE INTEL i486 Integrated Device Technology, Inc. ADVANCE INFORMATION IDT7MP6118 IDT7MP6119 FEATURES DESCRIPTION • 12 8K B /2 56K B d ire ct m a pped , n o n-sectored , ze ro -w a itsta te se co n d a ry cach e m o dule

bd 8h

Abstract: 8H68 8A98 8d-8d 6GDG
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78H68

Abstract: d879 879D
Contextual Info: Jg_T $   "  "%&$!"#E  $ ;B 1='=-: >5>?;= $ =;0@/?& @9 9 -=D 6MI[\YMZ S 4EFEI<F6;<A: ' -  . 9BD- ' * S ) CF<@ <L87 F86;AB?B: K 9BD    6BAH8DF8DE S + G4?<9<87 466BD7<A: FB $     )#  ) 9I , K '  - BA@ 4J )&- \" $9 )*( 6 9BDF4D: 8F4CC?<64F<BAE

AFBA

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BAE Systems

Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 209A542 transistor B885 LM136A-2.5QML
Contextual Info: 128K x 16 Radiation Hardened Static RAM MCM – 3.3 V 209A542 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

197A807

Abstract: BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4
Contextual Info: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V 197A807 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)

transistor B885

Abstract: 209A542 AEFJANTXV1N4100-1-BAE/TR/BAE LM136A-2.5QML
Contextual Info: 128K x 16 Radiation Hardened Static RAM MCM – 3.3 V 209A542 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

Contextual Info: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

L7582AAE

Abstract: L8581 L7581AAE L7541 L7581AC 24-Pin Plastic DIP L7581 L7582 L7583 SOG PACKAGE
Contextual Info: Product Brief June 2000 L7581/2/3 and L8581 Ringing, Tip/Ring, and Line Card Access Switches Features • Small size/surface-mount packaging ■ Monolithic IC reliability ■ Low impulse noise ■ Make-before-break, break-before-make operation ■ Clean, bounce-free switching

S4 46

Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 225A833
Contextual Info: 128K x 32 Radiation Hardened Static RAM MCM– 5 V 225A833 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

A1760

Abstract: 86-65-3 AEFJANTXV1N4100-1-BAE/TR/BAE
Contextual Info: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

prom 238A790

Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems
Contextual Info: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)

prom 238A790

Abstract: AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE
Contextual Info: 238A790 32K x 8 Read Only Memory PROM – 3.3V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches) • Latchup Free

transistor B885

Abstract: 201A072 225A837 B885
Contextual Info: 201A072 225A837 256K x 8 Radiation Hardened Static RAM MCM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

Contextual Info: 212A625 512K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with RHCMOS5XL 0.35 µm Process for Strategic rad hard or R25 0.25 µm Commercial process for rad hard • Radiation Hardened Total Dose hardness through

238A792

Contextual Info: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

EZ 729

Abstract: H944 SO45 OEE19415 OEE194152915 77ZA EZ 642 DI 944 63gp
Contextual Info: =;4203 0/1 8DJEF6? 86A =:D@:F>86?J E:6?:9 D; D:?6J ;OKZ[XOY * AheWZXWdZ * Iem _di[hj_ed beii0^_]^ _iebWj_ed * G_]^ WcX_[dj Wffb_YWX_b_jo * @bb c[jWb m[bZ[Z YedijhkYj_ed * G[hc[j_YWbbo m[bZ[Z WdZ cWha[Z Xo bWi[h 6@7>:AF 696CF67>?>FJ _ @cX_[dj ]hWZ[ @cX_[dj j[cf[hWjkh[