BA8E Search Results

BA8E Result Highlights (5)

Part	Manufacturer	Description
UPD78F0114M1GB(A)-8ES	Renesas Electronics Corporation	Compact, Low-power 8-bit Microcontrollers for General Purpose Applications (Non Promotion), LQFP, /
UPD78F0138M6GB(A)-8EU	Renesas Electronics Corporation	Compact, Low-power 8-bit Microcontrollers for General Purpose Applications (Non Promotion), LQFP, /
UPD78F0114M6GB(A)-8ES	Renesas Electronics Corporation	Compact, Low-power 8-bit Microcontrollers for General Purpose Applications (Non Promotion), LQFP, /
UPD78F0138M2GB(A)-8EU	Renesas Electronics Corporation	Compact, Low-power 8-bit Microcontrollers for General Purpose Applications (Non Promotion), LQFP, /
UPD78F9852GB(A)-8ES-A	Renesas Electronics Corporation	8-bit Microcontrollers (Non Promotion)

BA8E Price and Stock

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Micron Technology Inc MT25QL128ABA8E12-0SIT-TR IC FLASH 128MBIT SPI 24TPBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MT25QL128ABA8E12-0SIT-TR	Digi-Reel	10,556		1	1 $3.5 10 $3.107 100 $2.759 1000 $2.44832 10000 $2.44832	Buy Now
	MT25QL128ABA8E12-0SIT-TR	Cut Tape	10,556		1	1 $3.5 10 $3.107 100 $2.759 1000 $2.44832 10000 $2.44832	Buy Now
	MT25QL128ABA8E12-0SIT-TR	Reel	7,500		2,500	1 - 10 - 100 - 1000 - 10000 $1.99492	Buy Now
Micron Technology Inc MT25TL512BBA8ESF-0AAT IC FLASH 512MBIT SPI 16SOP2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MT25TL512BBA8ESF-0AAT	Tube	4,281		1	1 $8.21 10 $7.288 100 $6.475 1000 $6.475 10000 $6.475	Buy Now
Avnet Asia	MT25TL512BBA8ESF-0AAT			12 Weeks	1,000	1 - 10 - 100 - 1000 $6.81579 10000 $6.39506	Buy Now
Micron Technology Inc MT25QL256ABA8E12-0AAT IC FLASH 256MBIT SPI 24TPBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MT25QL256ABA8E12-0AAT	Bulk	2,454		1	1 $6.46 10 $5.729 100 $5.0839 1000 $4.6756 10000 $4.48272	Buy Now
Newark	MT25QL256ABA8E12-0AAT	Bulk	401		1	1 $3.62 10 $3.62 100 $3.62 1000 $3.62 10000 $3.62	Buy Now
Bristol Electronics	MT25QL256ABA8E12-0AAT		4,247			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	MT25QL256ABA8E12-0AAT			12 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $3.9359	Buy Now
Avnet Silica	MT25QL256ABA8E12-0AAT			17 Weeks	1,122	1 - 10 - 100 - 1000 - 10000 -	Buy Now

New Advantage Corporation	MT25QL256ABA8E12-0AAT		187		1	1 - 10 - 100 $6.43 1000 $6.43 10000 $6.43	Buy Now
Win Source Electronics	MT25QL256ABA8E12-0AAT		1,136			1 - 10 $6.0624 100 $4.0416 1000 $4.0416 10000 $4.0416	Buy Now
Micron Technology Inc MT25QU128ABA8E12-0AAT-TR IC FLASH 128MBIT SPI 24TPBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MT25QU128ABA8E12-0AAT-TR	Cut Tape	1,453		1	1 $4.44 10 $3.947 100 $3.5043 1000 $3.10946 10000 $3.10946	Buy Now
Micron Technology Inc MT25QL256ABA8E12-1SIT-TR IC FLASH 256MBIT SPI 24TPBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MT25QL256ABA8E12-1SIT-TR	Digi-Reel	1,230		1	1 $5.33 10 $4.732 100 $4.2011 1000 $3.72749 10000 $3.72749	Buy Now
	MT25QL256ABA8E12-1SIT-TR	Cut Tape	1,230		1	1 $5.33 10 $4.732 100 $4.2011 1000 $3.72749 10000 $3.72749	Buy Now

Find more BA8E price and stock on Findchips.com

BA8E Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
BA-8E6UW	Bright LED	LED LIGHT BAR & BAR GRAPH ARRAY	Original	PDF
BA-8E6UW	Bright LED	10.0 x 20.16mm LIGHT BAR	Original	PDF
BA-8E6UW	YellowStone	LED LIGHT BAR & BAR GRAPH ARRAYS	Original	PDF
BA-8E7UW-D	American Bright Optoelectronics	LED Light Bar & Bar Graph Array	Original	PDF
BA-8E7UW-D	YellowStone	Hi-eff red/orange , anode/cathode, LED light bar	Original	PDF
BA-8E9UW	American Bright Optoelectronics	LED Light Bar & Bar Graph Array	Original	PDF
BA-8E9UW	YellowStone	Hi-eff red/orange , anode/cathode, LED light bar	Original	PDF

BA8E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
DSP62 Abstract: AD14 BA-3H12UW Text: LED Light Bar & Bar Graph Arrays Part No. Digit Size 15.015.0mm Light Bar Cylindrical 8.50 Light Bar 33.022.0mm Light Bar Triangular Light Bar Common Anode Common Cathode Peak Wave Length λ p nm GaAsP/Red 655 40 160 40 200 3.4 4.0 BA-8H7UW-2 GaP/ Bright Red	Original	PDF	DSP-62 AD-13 AD-14 AD-15 AD-16 2x10UW AD-17 BA-16x11UW AD-18 3x12UW DSP62 AD14 BA-3H12UW
Untitled Abstract: No abstract text available Text: LED LIGHT BAR & BAR GRAPH ARRAYS Part No. Digit Size Common Anode Common Cathode Absolute Maximum Ratings Chip Electro-optical Data At 10mA Drawing Peak Vf (v) Iv. Typ. 'O No. Wave Pd If Ifp Per. Seg. Length (nm) (mw) (mA) (mA) Typ. Max. (mcd) P(nm) Material/Emitted	Original	PDF	BA-10H1UD BA-10G1UD 10Bar BA-10Y1UD BA-10E1UD BA-10S1UD BA-3E12UW BA-3S12UW BA-3D12UW AD-07
Untitled Abstract: No abstract text available Text: FE00 0002* 0!+,)&/!2)2.% %&0'0=40>0C7FAA0+,?> 9?0774209?0":94?:=492 #0&,470":@9?4920%:B0=0'@;740> )&' 800000009000000B 09E1A00A 1A 000A4260 B0000000030000003 G00)94A0=>,7009;@? G00'3:=?04=.@4?0%=:?0.?4:90B4?30@?:0&0.:A0=D	Original	PDF	800000009000000B 1A00A 000A4260 B0000000030000003 D4920* 90BCA AC789 D7E45324 50000000F000001 640006CA006
Untitled Abstract: No abstract text available Text: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BA-8E9UW Package Dimensions : Features : 1. Emitting area : 31.0x20.0 mm . 2. Low power requirement. 3. Excellent characters appearance. 4. Solid state reliability. 5. Categorized for luminous intensity. Description :	Original	PDF
DSP62 Abstract: No abstract text available Text: LED Light Bar & Bar Graph Arrays Part No. Digit Size 15.015.0mm Light Bar Cylindrical 8.50 Light Bar 33.022.0mm Light Bar Triangular Light Bar Common Anode Common Cathode Peak Wave Length λ p nm GaAsP/Red 655 40 160 40 200 3.4 4.0 BA-8H7UW-2 GaP/ Bright Red	Original	PDF	DSP-62 AD-13 AD-14 AD-15 AD-16 2x10UW AD-17 BA-16x11UW AD-18 3x12UW DSP62
d718d Abstract: No abstract text available Text: 123452667898ABCD8EF6B7 86DEA 123314567891A758BCD814E1F3D167D1F1C5A36 896616 BC !"F#$662%51&'6%F76 AA6!"F688987 123456 5 23+52) FF1 9 1 6 1 9633 1 4B 1 A5D7B3 1 8DD35AD 1 45678 1 5 1 3D 1 E5B 1 C5753 1 1	Original	PDF	123452667898ABCD8EF6 123314567891A758BCD814E1F3 167D1 17D36E15B B7D91 91A599 D71F3 F1A75 B33E15AD 67D16 d718d
2SD1417 Abstract: No abstract text available Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1417 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. FEATURES: . High DC Current Gain: h F E = 2 0 0 0 (Min.)(at V c e = 3V, Ic=3A) . Low Saturation Voltage: V q e (sat)=1-5V(Max.) (at Ic=3A)	OCR Scan	PDF	2SB1022. 2SD1417 a76-ai5 2-10L1A 2SD1417
Untitled Abstract: No abstract text available Text: D I S P L A Y LED LIGHT BARS & BAR GRAPH ARRAYS Chip P a rt No. E m itte d Digit Size Common Common Anode Cathode Color Electro-optical A b s o lu te M a x im u m R atings D ata A t 10mA Drawing Peak Wave Iv T yp. Vf(V) Pd Peak No. L ength A A P e r Seg.	OCR Scan	PDF
BU407 Abstract: BU406 1462, TRANSISTOR Text: ÆàMOS PEC NPN POWER TRANSISTOR These devices are high voltage,high speed transistors for hor izontal deflection output stages of TV's and CTV"s circuits. NPN BU406 BU407 FEATURES: * Collector-Emitter Sustaining Voltage VCEV = 330 V Min. - BU407 = 400 V (M in.)-BU406	OCR Scan	PDF	BU407 BU406 BU406 BU407 BU406- BU407- 150oC 1462, TRANSISTOR
TP30C Abstract: A 652 tip30c TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B Text: ÆÂMOS PEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS NPN TIP29 TIP29A TIP29B TÍP29C . designed for use in genera! purpose power amplifier and switching applications. FEATURES: * Coilector-Emitter Sustaining Voltage V~,v._r 40V Min - TIP29.TIP30	OCR Scan	PDF	TIP29 TIP30 TIP29A TIP30A TIP29B TIP30B -TiP29C TIP30C TP30C A 652 tip30c TIP29C TIP30
KSP06 Abstract: KSP05 Text: KSP05/06 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: VCEo = KSP05: 60V KSP06: 80V • Collector DlMlpatlon: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (T, =25#C) Characteristic Symbol C o lle cto r B ase Voltage	OCR Scan	PDF	KSP05/06 KSP05: KSP06: 625mW KSP05 KSP06 KSP06 KSP05
TTK SG 2368 Abstract: BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf Text: AP-55A APPLICATION NOTE i n t e i A u g u s t 1979 S.A. Distributor E l e c t r o n ic \ \ B u il d in g E l e m e n t s p t y l t d PURVEYORS OF a l l ELECTRONIC COMWNENTS Tel eph on e 7 8 - 9 2 2 1 / 6 P O B o x 4 6 0 9 , Pretoria T e l e x 3 01 8 1 S A	OCR Scan	PDF	AP-55A PR00UCT. MCS-48 /TP-11/1179/5K TTK SG 2368 BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf
Untitled Abstract: No abstract text available Text: KSC1393 NPN EPITAXIAL SILICON TRANSISTOR TV VHF TUNER RF AMPLIFIER FORWARD AGC TO-92 • High Current Gain Bandwidth Product fr=700MHz (Typ) • Low Noise Figure NF=3.0dB (Max) at f*200MHz • Low Reverse Transfer Capacitance C RE=0.5pF (Max) ABSOLUTE MAXIMUM RATINGS (TA-25t:)	OCR Scan	PDF	KSC1393 700MHz 200MHz
Untitled Abstract: No abstract text available Text: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain Bandwidth Product fT>600MHz Typ • High Power Gain Gpe=22dB at f= 100MHz ABSOLUTE MAXIMUM RATINGS (TA-2 5 t:) C haracteristic	OCR Scan	PDF	KSC1674 600MHz 100MHz 100MHz

MG75H2YL1A Abstract: A 222G Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75H2YL1A HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hpg=80 Min. (Iç=75A)	OCR Scan	PDF	MG75H2YL1A 00A/ns MG75H2YL1A A 222G
Untitled Abstract: No abstract text available Text: INTERNATIONAL RECTIFIER IO R 73 D \| MflSSMSa □0071ÖM i f T'-¿>/' 2'3 Data Sheet No. PD-2.134 In t e r n a t i o n a l , r e c t i f i e r R23D & R23DR SERIES 600 - 400 VOLTS RANGE 350 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS	OCR Scan	PDF	R23DR D0-205AB R23DGR4A. 4fl55452 00071flfl
Untitled Abstract: No abstract text available Text: KSC1815 NPN EPITAXIAL SILICO N TRANSISTO R AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC • Complement to KSC1815 • Collector-Base Voltage Vcbo=-50V ABSOLUTE MAXIMUM RATINGS Characteristic Ta=25°C Symbol Rating Unit VCBO 60 50 5 150 50 400 125 -55-150	OCR Scan	PDF	KSC1815
Untitled Abstract: No abstract text available Text: KST3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Ch a ra cteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature	OCR Scan	PDF	KST3906 OT-23
H11A520-H11A550 Abstract: H11A51 H11A5100 H11A520 H11A550 HUA550 Text: S OL I D STATE D1 DE I 3 Ö7 SDÖ1 0 0 1 ^ 4 7 Optoelectronic Specifications - T - m - s z Photon Coupled Isolator H11A520-H11A550 -H11A5100 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor T h e G E Solid State H 11A520, H11A550 and H I 1A5100 consist o f a	OCR Scan	PDF	3fl75Dfll H11A520-H11A550 -H11A5100 H11A520, H11A550 H11A5100 referencefileE51868 H11A520-H11A550-H11A5100 H11A51 H11A520 HUA550
KSA545 Abstract: KSC853 LTAGE WALTA Text: SAMSUNG SEMI C O NDU CT OR INC KSC853 11E \| V lfcq ita O O Ob S S ? 3 \| 'T - - 1 - f t NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER • Complement to KSA545 • High Collector-Bas* Voltage Vcso =70V • Collector Dissipation Pc =400mW ABSOLUTE MAXIMUM RATINGS Ta=25°C	OCR Scan	PDF	7U414E KSC853 KSA545 400mW KSA545 LTAGE WALTA
BU406 Abstract: BU407 HI SPEED, HI CURRENT, TO-220, TRANSISTOR Text: ÆàMOS PEC NPN POWER TRANSISTOR These devices are high voltage,high speed transistors for hor izontal deflection output stages of TV's and CTV"s circuits. NPN BU406 BU407 FEATURES: * Collector-Emitter Sustaining Voltage VCEV = 330 V Min. - BU407 = 400 V (M in.)-BU406	OCR Scan	PDF	BU407 -BU406 BU406 BU407 150oC HI SPEED, HI CURRENT, TO-220, TRANSISTOR
ica 700 Y Abstract: transistor 16299 Text: TOSHIBA -CDISCRETE/OPTOÏ 9097250 TOSHIBA TO SH IBA TD DISCRETE/OPTO 1)1 ^ 0^7550 OOlbETt 3 DT-3 3 - 3 5 90D 16296 SEMICONDUCTOR TOSHIBA GTR MODULE TECHNICAL DATA MG400H1F L 1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.	OCR Scan	PDF	MG400H1F ica 700 Y transistor 16299
MG75H6EL1 Abstract: No abstract text available Text: MG75H6EL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . High DC Current Gain	OCR Scan	PDF	MG75H6EL1 MG75H6EL1
Untitled Abstract: No abstract text available Text: INTERNATIONAL RECTIFIER lOR j\| 4055455 □□0720cï E \| in t e r n a t io n a l, r e c t if i e r _ T — c/— 7^3 DataSheetNo.PD-2.139 R30D & R30DR S E R IE S 600 - 400 VOLTS R A N G E 485 A M P AVG S T U D M O U N T E D D IF F U SE D JU N C T IO N R E C T IF IE R D IO D E S	OCR Scan	PDF	0720c R30DR 600Vi R30DR6A.

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BA8E Search Results

BA8E Result Highlights (5)

BA8E Price and Stock

Micron Technology Inc MT25QL128ABA8E12-0SIT-TR

Micron Technology Inc MT25TL512BBA8ESF-0AAT

Micron Technology Inc MT25QL256ABA8E12-0AAT

Micron Technology Inc MT25QU128ABA8E12-0AAT-TR

Micron Technology Inc MT25QL256ABA8E12-1SIT-TR

BA8E Datasheets (7)

BA8E Datasheets Context Search

DSP62

Untitled

Untitled

Untitled

DSP62

d718d

2SD1417

Untitled

BU407

TP30C

KSP06

TTK SG 2368

Untitled

Untitled

MG75H2YL1A

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Untitled

H11A520-H11A550

KSA545

BU406

ica 700 Y

MG75H6EL1

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