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    BA779

    Abstract: No abstract text available
    Text: BA779–2 Vishay Semiconductors Dual RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ BA779–2 Ordering Code


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    BA779 13-Feb-01 mmx50 D-74025 PDF

    BA779

    Abstract: No abstract text available
    Text: BA779–2 Vishay Telefunken Dual RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ BA779–2 Ordering Code


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    BA779 13-Feb-01 mmx50 D-74025 PDF

    BA779

    Abstract: No abstract text available
    Text: BA779–2 TELEFUNKEN Semiconductors Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol


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    BA779 50mmx50mmx1 D-74025 PDF

    8550 sot-23

    Abstract: BA779 BA779S
    Text: BA779.BA779S Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature


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    BA779 BA779S 50mmx50mmx1 D-74025 12-Dec-94 8550 sot-23 BA779S PDF

    sot-23 diode m9

    Abstract: No abstract text available
    Text: BA779-2_ Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled attenuators HF resistance in adjustable Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current Junction temperature


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    BA779-2_ 50mmx50mmx1 100MHz, 01-Apr-99 BA779-2 OT-23 sot-23 diode m9 PDF

    Untitled

    Abstract: No abstract text available
    Text: BA779-2 VISHAY Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25° C Parameter Reverse voltage Forward current


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    BA779-2 50mmx50mmx1 100MHz, 10i7i 01-Apr-99 PDF

    BA779

    Abstract: BA779S
    Text: BA779.BA779S TELEFUNKEN Semiconductors Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current


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    BA779 BA779S 50mmx50mmx1 D-74025 BA779S PDF

    BA779

    Abstract: No abstract text available
    Text: BA779–2 Vishay Telefunken Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature


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    BA779 50mmx50mmx1 D-74025 01-Apr-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: BA779/BA779S VISHAY Vishay Semiconductors RF PIN Diodes Features 3 • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 1 2 16923 Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 8 mg


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    BA779/BA779S OT-23 BA779 BA779S BA779-GS18 BA779-GS08 BA779S-GS18 BA779S-GS08 D-74025 24-Feb-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: BA779.BA779S_ v is h a y Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Parameter


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    BA779 BA779S_ 50mmx50mmx1 01-Apr-99 BA779S OT-23 PDF

    BA779

    Abstract: BA779S
    Text: BA779.BA779S Vishay Telefunken Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature


    Original
    BA779 BA779S 50mmx50mmx1 D-74025 01-Apr-99 BA779S PDF

    Untitled

    Abstract: No abstract text available
    Text: BA779-2 VISHAY Vishay Semiconductors Dual RF PIN Diodes Features 3 • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 1 2 16923 Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 8 mg


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    BA779-2 OT-23 BA779-2 BA779-2-GS18 BA779-2-GS08 D-74025 24-Feb-04 PDF

    BA779

    Abstract: SOT-23 94
    Text: BA779–2 Silicon PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range


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    BA779 50mmx50mmx1 D-74025 12-Dec-94 SOT-23 94 PDF

    BA779-2

    Abstract: BA779
    Text: T e m ic BA779-2 TELEFUNKEN Semiconductors Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current


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    BA779-2 50mmx50mmx 100MHz, l00MHz, BA779-2 BA779 PDF

    Untitled

    Abstract: No abstract text available
    Text: BA779.BA779S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ


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    BA779 BA779S BA779 BA779â BA779Sâ 13-Feb-01 D-74025 PDF

    Untitled

    Abstract: No abstract text available
    Text: v tS H A Y _ BA779-2 ▼ Vishay Telefunken Silicon PIN Diodes Features • W ide freq ue n cy range 10 M Hz to 1 GHz Applications C urrent controlled attenuators HF resistance In adjustable Absolute Maximum Ratings Tj = 2 5 °C


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    BA779-2 D-74025 01-Apr-99 PDF

    BA779

    Abstract: BA779S
    Text: BA779.BA779S Vishay Semiconductors RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ


    Original
    BA779 BA779S BA779 BA779S 13-Feb-01 D-74025 PDF

    Untitled

    Abstract: No abstract text available
    Text: BA779.BA779S V ï|P A f Vishay Telefu nken ▼ Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled attenuators HF resistance In adjustable Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current


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    BA779 BA779S 50mmx50mmx1 D-74025 24-Jun-98 PDF

    Untitled

    Abstract: No abstract text available
    Text: BA779-2-V-GH www.vishay.com Vishay Semiconductors RF PIN Diodes - Dual Series FEATURES • Wide frequency range 10 MHz to 1 GHz 3 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 1 2 APPLICATIONS


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    BA779-2-V-GH AEC-Q101 OT-23 18/10K 10K/box 08/3K 15K/box BA779-2-V-GH-18 BA779-2-V-GH-08 PDF

    BA779-V-GH

    Abstract: No abstract text available
    Text: BA779-V-GH www.vishay.com Vishay Semiconductors RF PIN Diodes FEATURES • Wide frequency range 10 MHz to 1 GHz 3 • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 1 2 APPLICATIONS • Current controlled HF resistance in adjustable


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    BA779-V-GH AEC-Q101 OT-23 08/3K 15K/box BA779-V-GH-08 2002/95/EC. 2002/95/EC 2011/65/EU. BA779-V-GH PDF

    BA779

    Abstract: BA779S
    Text: BA779.BA779S Vishay Telefunken RF PIN Diodes Features D Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Order Instruction Type Type Differentiation VR = 30 V, Zr = 5kΩ VR = 30 V, Zr = 9kΩ


    Original
    BA779 BA779S BA779 BA779S 13-Feb-01 D-74025 PDF

    BA779

    Abstract: BA779-GS08 BA779-GS18 BA779S BA779S-GS08 BA779S-GS18
    Text: BA779 / BA779S VISHAY Vishay Semiconductors RF PIN Diodes - Single in SOT-23 Features 3 • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 1 2 16923 Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.1 mg


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    BA779 BA779S OT-23 OT-23 BA779 BA779-GS18 BA779-GS08 BA779S-GS18 BA779S-GS08 BA779-GS08 BA779S BA779S-GS08 PDF

    Untitled

    Abstract: No abstract text available
    Text: BA779-2 VISHAY Vishay Semiconductors Dual RF PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz 2 Applications 3 1 Current controlled HF resistance in adjustable attenuators 1 2 3 18256 Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 8.1 mg


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    BA779-2 OT-23 BA779-2 BA779-2-GS18 BA779-2-GS08 D-74025 21-Apr-04 PDF

    T4AS

    Abstract: No abstract text available
    Text: Tem ic BA779-2 S e m i c o n d u c t o r s Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25 °C Symbol Value Unit Reverse voltage


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    BA779-2 50mmx50mmxl D-74025 12-Dec-94 T4AS PDF