BA4* AMPLIFIER Search Results

BA4 amplifier

Abstract: ba4 RF amplifier
Contextual Info: BIPOLARICS, INC. Part Number BA4 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 3.8 GHz in ceramic Micro-X - DC to 3.6 GHz in plastic packages • Suitable for 7V systems

Contextual Info: CV111-1A PCS/DCS-band High Linearity Downconverter 1234 BE 76472 BF 1234 1234 879764 B BD BC BB4 4 764 BA4 764 7644 B 123 123 C A 123 123 D A 123 4344 123 E A 7 AF 123 564 879564 4 4 4 AA AB AC 123 A 4  879 Typical applications include frequency down conversion,

BA4510F

Abstract: BA4510FV IC i voltage follower
Contextual Info: Standard ICs Dual high slew rate operational amplifier B A 4 5 1 0 F/BA4 5 1 OFV The BA451 OF an d B A 4510FV are m o n o lith ic ICs th a t co n ta in tw o o p e ra tio n a l a m p lifie rs w ith h ig h sle w rate, fe a tu rin g p h a s e c o m p e n s a tio n . T h e s e ICs can b e d rive n w ith a lo w -v o lta g e p o w e r s u p p ly, re q u irin g a p o w e r s u p p ly ra n g e o f

Contextual Info: Advanced Data Sheet SBA-4089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process

sba-4086

Contextual Info: SBA-4086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

BA4Z

Abstract: sba4089 SBA-4089 sba-4089z InP transistor HEMT sot 163 Package
Contextual Info: SBA-4089 Z SBA-4089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal

Contextual Info: SBA-4089 Z SBA-4089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal

BA4 amplifier

Abstract: SIRENZA MARKING
Contextual Info: Preliminary Data Sheet SBA-4086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process

SBA-4089

Abstract: S1-101 BA433 ba4 transistor
Contextual Info: SBA-4089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

Tone Design Technology

Abstract: ba4 transistor 4086 SBA-4086Z SBA-4086 InP transistor HEMT
Contextual Info: SBA-4086 Z SBA-4086(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-86 Product Description Features RFMD’s SBA-4086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed

TRANSISTOR BI 187

Contextual Info: SBA-4089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

ba4 transistor

Abstract: SBA-4086 ba4 RF amplifier
Contextual Info: SBA-4086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with

BA4Z

Abstract: sba4089z SIRENZA MARKING SBA-4089 sba-4089z
Contextual Info: SBA-4089 Product Description SBA-4089Z Sirenza Microdevices’ SBA-4089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal

marking D mmic b4z

Abstract: 4086 datasheet b4z diode diode marking B4Z SBA-4086 SBA-4086Z SIRENZA MARKING
Contextual Info: SBA-4086 Product Description SBA-4086Z Sirenza Microdevices’ SBA-4086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal

LM1205N

Abstract: ccd board Circuit Schematic Diagram Electronic 11831 differential pair cascode darlington C1995 LM1205 N28B Q102
Contextual Info: LM1205 130 MHz RGB Video Amplifier System with Blanking Y General Description The LM1205 is a very high frequency video amplifier system intended for use in high resolution RGB monitor applications In addition to the three matched video amplifiers the LM1205 contains three gated single ended input black level

LM1205N

Abstract: ccd board Circuit Schematic Diagram Electronic schematic diagram lcd monitor TL 150 11831 differential pair cascode darlington C1995 LM1205 N28B Q102 E1V09
Contextual Info: LM1205 130 MHz RGB Video Amplifier System with Blanking Y General Description The LM1205 is a very high frequency video amplifier system intended for use in high resolution RGB monitor applications In addition to the three matched video amplifiers the LM1205 contains three gated single ended input black level

Contextual Info: C ütO U H I IF il n FLH826A4N H l il \p_ ^ ul I I R nW \V aV/cU I d I J^ . UR I Q HI I7£— A i lmV Ii Id iI—. i11c i11— iid I 1 / • ! ow co^î hinh rv^rform^nrp ^ 77^ to S f-iH? ■V! ■fe power amplifier 20dB gain, 8 watt output power Compact package with SMA connectors

differential pair cascode darlington

Abstract: C1996 LM1208 LM1208N LM1209 LM1209N N28B
Contextual Info: LM1208 LM1209 130 MHz 100 MHz RGB Video Amplifier System with Blanking Y General Description The LM1208 LM1209 is a very high frequency video amplifier system intended for use in high resolution RGB monitor applications In addition to the three matched video amplifiers the LM1208 LM1209 contains three gated single ended input black level clamp comparators for brightness control three matched DC controlled attenuators for contrast

Contextual Info: LM1205 LM1207 130 MHz 85 MHz RGB Video Amplifier System with Blanking Features Y Y Y Y Y Y Applications Y Y High resolution RGB CRT monitors Video AGC amplifiers Wideband amplifiers with gain and DC offset controls Interface amplifiers for LCD or CCD systems

LM1205N

Abstract: ccd board Circuit Schematic Diagram Electronic schematic diagram lcd monitor TL 150 differential pair cascode darlington TRIO R27 DIFFERENTIAL VIDEO AMPLIFIER crt monitor PCB LAYOUT LM1207N crt monitor circuit diagram crt monitor functional diagram
Contextual Info: LM1205 LM1207 130 MHz 85 MHz RGB Video Amplifier System with Blanking Y General Description The LM1205 LM1207 is a very high frequency video amplifier system intended for use in high resolution RGB monitor applications In addition to the three matched video amplifiers the LM1205 LM1207 contains three gated single ended input black level clamp comparators for brightness control three matched DC controlled attenuators for contrast

4510 opamp

Abstract: VF10 BA45 BA4510
Contextual Info: ? a 2 ö cm IRHM 0DCH114 T i l RDHm Products Type Page Semiconductor IC B A 4 51 0 F STRUCTURE Silicon Monolithic IntegratedC ircuit TYPE BA45 10F PRODUCT SERIESD u a l PACKAGE OUTLINES BLOCK DIAGRAM SHEMATIC DIAGRAM Operational Figure Figure Figure Amp 1 i f i r e s

Contextual Info: LM1205,LM1207 LM1205 LM1207 130 MHz/85 MHz RGB Video Amplifier System with Blanking Literature Number: SNVS111A LM1205 LM1207 130 MHz 85 MHz RGB Video Amplifier System with Blanking Features Y Y Y Y Y Y Applications Y Y High resolution RGB CRT monitors Video AGC amplifiers

max14920

Abstract: MAX14921 fet ba7 max17501 max14850
Contextual Info: EVALUATION KIT AVAILABLE MAX14920/MAX14921 High-Accuracy 12-/16-Cell Measurement AFEs General Description The MAX14920/MAX14921 battery measurement analog front-end devices accurately sample cell voltages and provide level shifting for primary/secondary battery packs

Contextual Info: EVALUATION KIT AVAILABLE MAX14920/MAX14921 High-Accuracy 12-/16-Cell Measurement AFEs General Description The MAX14920/MAX14921 battery measurement analog front-end devices accurately sample cell voltages and provide level shifting for primary/secondary battery packs