BA240 Search Results

BA-1212S1

Abstract: BA-0505S1 BA-0505S BA-0512S BA-0512S1 BA-053R3S BA-053R3S1 BA-1205S BA-1205S1 BA-1212S
Contextual Info: BA - 0.5 to 1 Watt Isolated DC-DC Converter SIL Series Single Output 1. Features : n 4 Pin SIL Package n Low Ripple and Noise n Input / Output Isolation 1000 Vdc n 100 % Burn-In n Input Filter with Internal Capacitor n Custom Design Available 2. Absolute maximum ratings:

BA-0505D1

Abstract: ba-0505D1Lf BA 20 BA 50 900DDH BA-0505D BA-0505S BA-0512D BA-0512S BA-053R3D BA-053R3S
Contextual Info: BA LF Series 0.5 to 1 Watt Isolated DC-DC Converter Single / Dual Output 1. Features λ λ λ λ λ λ λ λ 4 Pin SIL / 8 Pin DIL Package Low Ripple and Noise Input / Output Isolation ：1000 Vdc 100% Burn-In Input Filter with Internal Capacitor Custom Design Available

K8P2815UQB

Contextual Info: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

BA258

Abstract: ba146 BA148 ba198 BA204
Contextual Info: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

samsung electronics ba41

Abstract: BA175
Contextual Info: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

BA379

Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

Contextual Info: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

TC58FVM7B5BTG65

Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
Contextual Info: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as

06SEC

Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
Contextual Info: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TC58FVM7B5BTG65

Abstract: TC58FVM7t5BTG65 BK-10 HA145
Contextual Info: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as

BA254

Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT
Contextual Info: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features

Contextual Info: SN54BCT2240, SN74BCT2240 OCTAL BUFFERS AND LINE/MOS DRIVERS WITH 3-STATE OUTPUTS SCBS030E – SEPTEMBER 1988 – REVISED MARCH 2003 D D SN54BCT2240 . . . J OR W PACKAGE SN74BCT2240 . . . DB, DW, N,OR NS PACKAGE TOP VIEW Operating Voltage Range of 4.5 V to 5.5 V

Contextual Info: SN54BCT2240, SN74BCT2240 OCTAL BUFFERS AND LINE/MOS DRIVERS WITH 3-STATE OUTPUTS SCBS030E − SEPTEMBER 1988 − REVISED MARCH 2003 D Operating Voltage Range of 4.5 V to 5.5 V D State-of-the-Art BiCMOS Design SN54BCT2240 . . . J OR W PACKAGE SN74BCT2240 . . . DB, DW, N,OR NS PACKAGE

Contextual Info: SN54BCT2240, SN74BCT2240 OCTAL BUFFERS AND LINE/MOS DRIVERS WITH 3-STATE OUTPUTS SCBS030E – SEPTEMBER 1988 – REVISED MARCH 2003 D D SN54BCT2240 . . . J OR W PACKAGE SN74BCT2240 . . . DB, DW, N,OR NS PACKAGE TOP VIEW Operating Voltage Range of 4.5 V to 5.5 V

Contextual Info: BA LF Series 0.5 To 1 Watt Isolated DC-DC Converter Single / Dual Output 1. Features l l l l l l l l 4 Pin SIL / 8 Pin DIL Package Low Ripple And Noise Input / Output Isolation：1000 Vdc 100% Burn-In Input Filter With Internal Capacitor Custom Design Available

Contextual Info: SN54BCT2240, SN74BCT2240 OCTAL BUFFERS AND LINE/MOS DRIVERS WITH 3-STATE OUTPUTS SCBS030E − SEPTEMBER 1988 − REVISED MARCH 2003 D Operating Voltage Range of 4.5 V to 5.5 V D State-of-the-Art BiCMOS Design SN54BCT2240 . . . J OR W PACKAGE SN74BCT2240 . . . DB, DW, N,OR NS PACKAGE

Contextual Info: SN54BCT2240, SN74BCT2240 OCTAL BUFFERS AND LINE/MOS DRIVERS WITH 3-STATE OUTPUTS SCBS030E – SEPTEMBER 1988 – REVISED MARCH 2003 D D SN54BCT2240 . . . J OR W PACKAGE SN74BCT2240 . . . DB, DW, N,OR NS PACKAGE TOP VIEW Operating Voltage Range of 4.5 V to 5.5 V

BA142

Contextual Info: Target Information FLASH MEMORY K8Q2815UQB 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: K8C54 55 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR

BA188

Abstract: BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213
Contextual Info: Rev. 1.0, Nov. 2010 K8S5615ETC 256Mb C-die NOR Flash 44FBGA, Muxed Burst, Multi Bank SLC 16M x16, 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

BA512

Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
Contextual Info: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh

BA251

Abstract: 16N10
Contextual Info: K8F56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

BA339

Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
Contextual Info: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

BA339

Abstract: K8C1215ET BA507
Contextual Info: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,