Untitled
Abstract: No abstract text available
Text: BA157 . BA159 BA157 . BA159 Fast Silicon Rectifier Diodes – Schnelle Silizium-Gleichrichterdioden Version 2013-01-21 Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung ± 0.1 Plastic case Kunststoffgehäuse
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BA157
BA159
DO-41
DO-204AC
UL94V-0
BA157
BA158
BA159
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BA157
Abstract: BA158 BA159 DO-204AL
Text: BA157 . BA159 BA157 . BA159 Fast Silicon Rectifier Diodes – Schnelle Silizium-Gleichrichterdioden Version 2009-10-16 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung -0.1 DO-41 DO-204AL Weight approx. Gewicht ca.
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BA157
BA159
DO-41
DO-204AL
UL94V-0
BA157
BA158
BA159
DO-204AL
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Untitled
Abstract: No abstract text available
Text: Silicon Rectifier Formosa MS BA157 THRU BA159 List List. 1 Package outline. 2 Features. 2
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BA157
BA159
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
1000hrs.
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BA157
Abstract: BA158 BA159
Text: BA157 - BA159 FAST RECOVERY RECTIFIER DIODES PRV : 400 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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BA157
BA159
DO-41
UL94V-O
MIL-STD-202,
BA158
BA159
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Untitled
Abstract: No abstract text available
Text: BA157 - BA159 FAST RECOVERY RECTIFIER DIODES PRV : 400 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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BA157
BA159
DO-41
UL94V-O
MIL-STD-202,
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BA159
Abstract: ba159 diode diode BA159 10A DIODE 1000C 500C
Text: BA159 Naina Semiconductor emiconductor Ltd. Fast Recovery Diode Diode, 1.0A Features • • • • • Diffused junction High efficiency Low forward voltage drop Low power loss High surge current capability Mechanical Characteristics • Case: Molded Plastic
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BA159
MIL-STD-202,
1000C
BA159
ba159 diode
diode BA159
10A DIODE
1000C
500C
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ba159 diode
Abstract: BA157 diode ba157 diode BA159 BA157-T3 BA157-TB BA158 BA158-T3 BA158-TB BA159
Text: BA157 – BA159 WTE POWER SEMICONDUCTORS Pb 1.0A FAST RECOVERY DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic
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BA157
BA159
DO-41,
MIL-STD-202,
DO-41
ba159 diode
BA157
diode ba157
diode BA159
BA157-T3
BA157-TB
BA158
BA158-T3
BA158-TB
BA159
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Untitled
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 www.eicsemi.com BA157 - BA159 IATF 0113686 SGS TH07/1033 FAST RECOVERY RECTIFIER DIODES PRV : 400 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current
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TH09/2479
TH97/2478
BA157
BA159
TH07/1033
DO-41
UL94V-O
MIL-STD-202,
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diode BA159
Abstract: BA157 BA158 BA159
Text: BA157 - BA159 FAST RECOVERY RECTIFIER DIODES PRV : 400 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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BA157
BA159
DO-41
UL94V-O
MIL-STD-202,
diode BA159
BA158
BA159
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Untitled
Abstract: No abstract text available
Text: BA157 - BA159 FAST RECOVERY RECTIFIER DIODES PRV : 400 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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BA157
BA159
DO-41
UL94V-O
MIL-STD-202,
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BA157
Abstract: BA158 BA159 BA159D
Text: LESHAN RADIO COMPANY, LTD. BA157 – BA159 1A 1A FAST RECOVERY DIODES TYPE Maximum Peak Reverse Voltage Maximum Average Maximum Rectified Current Forward Peak @ Half-Wave Surge Current @ Resistive Load 60Hz 8.3ms Superimposed PRV I O@ T L V PK BA157 BA158
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BA157
BA159
BA158
BA159D
BA157
BA158
BA159
BA159D
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Untitled
Abstract: No abstract text available
Text: BA157 – BA159 1.0A FAST RECOVERY DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data
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BA157
BA159
DO-41,
MIL-STD-202,
DO-41
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Untitled
Abstract: No abstract text available
Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com BA157 - BA159 FAST RECOVERY
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BA157
BA159
DO-41
UL94V-O
MIL-STD-202,
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BA157
Abstract: BA159 DO-204AL J-STD-002 Vishay P
Text: BA157 thru BA159 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106
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BA157
BA159
22-B106
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
AEC-Q101
11-Mar-11
BA159
DO-204AL
J-STD-002
Vishay P
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BA157
Abstract: BA158 BA159 DIODE BA159 ba159 diode diode BA157
Text: CURRENT 1.0 Ampere VOLTAGE 400 to 1000 Volts BA157 THRU BA159 Features • Plastic package has Underwrites Laboratory Flammability Classification 94V-0 · Fast switching speed · Diffused junction · High current capability · High temperature soldering guaranteed : 250℃/10 seconds,
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BA157
BA159
DO-41
DO-41
MIL-STD-750,
BA158
BA159
DIODE BA159
ba159 diode
diode BA157
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BA157
Abstract: BA159 DO-204AL JESD22-B102 J-STD-002
Text: BA157 thru BA159 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC
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BA157
BA159
2002/95/EC
2002/96/EC
DO-204AL
DO-41)
DO-204AL,
18-Jul-08
BA159
DO-204AL
JESD22-B102
J-STD-002
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BA157
Abstract: BA159 DO-204AL JESD22-B102D J-STD-002B
Text: BA157 thru BA159 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC
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BA157
BA159
2002/95/EC
2002/96/EC
DO-204AL
DO-41)
DO-204AL,
08-Apr-05
BA159
DO-204AL
JESD22-B102D
J-STD-002B
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Diode BA159
Abstract: No abstract text available
Text: BA157, BA158, BA159D, BA159 www.vishay.com Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106
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BA157,
BA158,
BA159D,
BA159
22-B106
DO-204AL
DO-41)
2002/95/EC.
2002/95/EC
2011/65/EU.
Diode BA159
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Untitled
Abstract: No abstract text available
Text: BA157 thru BA159 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC
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BA157
BA159
2002/95/EC
2002/96/EC
DO-204AL,
J-STD-002B
JESD22-B102D
08-Apr-05
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BA157
Abstract: BA159 DO-204AL JESD22-B102D J-STD-002B
Text: BA157 thru BA159 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC
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BA157
BA159
2002/95/EC
2002/96/EC
DO-204AL
DO-41)
08-Apr-05
BA159
DO-204AL
JESD22-B102D
J-STD-002B
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Untitled
Abstract: No abstract text available
Text: BA157 thru BA159 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106
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BA157
BA159
22-B106
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
AEC-Q101
DO-204AL,
18-Jul-08
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ba159
Abstract: No abstract text available
Text: BA157 thru BA159 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106
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BA157
BA159
22-B106
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
AEC-Q101
DO-204AL,
2011/65/EU
ba159
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Untitled
Abstract: No abstract text available
Text: BA157 – BA159 WTE POWER SEMICONDUCTORS Pb 1.0A FAST RECOVERY DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic
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BA157
BA159
DO-41,
MIL-STD-202,
DO-41
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ITT BA159
Abstract: diode ITT 157 ba ba159 ITT BA157 ba159 diode BA157 BA157 200 BA158 DIODE BA159 BA159 switching diode
Text: ITT SEMICON»/ INTERMETALL 50E D 4bA2711 OODBMSS S74 M I S I 13 BA157 . BA159 Fast General Purpose Silicon Rectifiers for high speed switching applications, e. g. as clamping diode in colour TV receivers J * - max 3.2 islI f I Cathode Mark ^0.8 i> Plastic case
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4bfl2711
BA157
BA159
BA157
BA158
BA159
4b62711
BA157:
ITT BA159
diode ITT 157 ba
ITT BA157
ba159 diode
BA157 200
DIODE BA159
BA159 switching diode
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