BA QC TRANSISTOR Search Results

Contextual Info: / T l i n f i A R LTC1558-3.3/LTC 1558-5 Backup Battery Controller with Programmable Output — TECHNOLOGY FCRTURCS DCSCRIPTIOn • Complete Battery Backup System in an S O -8,16-P in GN or SO Package ■ Generates Adjustable Backup Voltage from a Single 1.2V NiCd Button Cell

Mahr 40 ex

Abstract: ba qc transistor 1558G LR2D VB30E CD54-220 CD54-22
Contextual Info: r r \imL- LTC1558-3.3/LTC 1558-5 Backup Battery Controller with Programmable Output TECHNOLOGY FCRTURCS DCSCRIPTIOn • Complete Battery Backup System in an S O -8,16-P in GN or SO Package ■ Generates Adjustable Backup Voltage from a Single 1.2V NiCd Button Cell

Saft, battery Ni-Cd

Abstract: ba qc transistor P-11AAH gb170 gb60 nicd VB10E TC1435 LTC1559CGN-5 LTC1559CS8-5
Contextual Info: LTC1559-3.3/LTC 1559-5 r r u n m TECHNOLOGY Backup Battery Controller with Fixed Output F€RTUR€S D C S C R IP TIO n • Complete Battery Backup System in an SO-8, 16-Pin GN or SO Package ■ Generates Fixed Backup Voltage 3.07V/4.63V from a Single 1.2V NiCd Button Cell

ATINY 12

Abstract: A1252 62128
Contextual Info: r r u rm TECHNOLOGY LTC690/LTC691 _ LTC694/LTC695 M icroprocessor Supervisory Circuits F€RTU R€S D C S C R IP T IO n • ■ ■ ■ The LTC690family provides complete powersupply moni­ toring and battery control functions for microprocessor

GB60 saft

Abstract: M/gb60 nicd
Contextual Info: r r u n LTC1559-3.3/LTC 1559-5 m TECH N O LO G Y B a cku p Battery Controller with Fixed O utp ut F€RTUR€S DCSCRIPTIOn • Complete Battery Backup System in an SO-8, 16-Pin GN or SO Package ■ Generates Fixed Backup Voltage 3.07V/4.63V from a Single 1.2V NiCd Button Cell

The 8002 Amplifier IC

Abstract: 8002 amplifier M12j 8002 op amp C 4242 transistor 457V constant current source with 500mA n-channel mosfet triggering LT 8001 P LT1620
Contextual Info: [p[F3H[FaH[L[Il^iaH Electrical Specifications Subject to Change r r u v _ LTC1731 m TECHNOLOGY Lithium-Ion Linear Battery C harger C ontroller July 1999 F€fflTUR€S DCSCRIPTIOn • Complete Linear Charger Controller for 1- or 2-Cell Lithium-Ion Batteries

2SD780

Abstract: 7802S
Contextual Info: NEC SILICON TRANSISTORS BECTRON DEVICE 2SD780,2SD780A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2S0780, 2SD780A are designed fo r use in small type equipments espe­ in m illim eters 2 .8 + 0 2

Contextual Info: • b3E bSMTfls? o o m ^ M ä sas ■ m i t b M ITSUB ISH I BIPOLAR DIGITAL ICs M54502P niTSUBISHI DGTL LOGIC DUAL AND GATE W ITH DRIVE TRANSISTOR DESCRIPTION The M54502P is a semiconductor integrated circuit contain­ ing two TTL AND gates and two high current, high break­

Contextual Info: MITSUBISHI DISCRETE SC bSiHflST D015273 fll3 «tlITS blE T> MITSUBISHI RF POWER TRANSISTOR 2SC2798 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION O UTLINE DRAWING 2 S C 2 7 9 8 is a s ilic o n N P N e p itaxia l plan ar ty p e t ra n sisto r d e sign e d fo r R F b ro a d -b a n d p o w e r a m p lifie rs in U H F band.

transistor k 316

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated dam per diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved

NEC PS2001B

Abstract: PS2001B ps2001
Contextual Info: SEC PHOTO BECTM M DEVICE COUPLER PS2001B PHOTO COUPLER INDUSTRIAL USE -NEPO C SERIES - DESCRIPTION The PS2001B is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon photo transistor. FEATURES PACKAGE DIMENSIONS • High isolation voltage

1200 va ups circuit diagram

Abstract: transistor BA RW QM15
Contextual Info: i j I MITSUBISHI TRANSISTOR MODULES I j QM150DY-24K I % j HIGH POWER SWITCHING USE j S INSULATED TYPE j j j QM150DY-24K • • • • • lc Collector current. 150A Vcex Collector-emitter voltage. 1200V hFE DC current gain.75

Contextual Info: MOTOROLA Order this document by BUT33/D SEMICONDUCTOR TECHNICAL DATA BUT33 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS

transistor vn2222

Abstract: AC adapter GLT1505 11N4148
Contextual Info: /rim Final Electrical Specifications LT1505 TECHNOLOGY C o n s ta n t-C u rre n t/V o lta g e High E fficiency B attery C h a rg e r F e b ru a ry 1999 FCRTURCS • Simple Design to Charge NiCd, NiMH and Lithium Rechargeable Batteries— Charging Current Programmed by Resistors or DAC

Contextual Info: DISCRETE SEMICONDUCTORS PH2369 NPN switching transistor 1999 Apr 27 Product specification Supersedes data of 1997 May 27 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN switching transistor PH2369 FEATURES PINNING • Low curren t max. 200 mA

ICS844S

Abstract: vco 2GHz
Contextual Info: PRELIMINARY ICS844S012I CRYSTAL-TO-LVDS/LVCMOS FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS844S012I is an optimized PCIe, sRIO and ICS Gigabit Ethernet Frequency Synthesizer and a HiPerClockS member of HiperClocks™ family of high performance clock solutions from IDT. The ICS844S012I

Contextual Info: /^ruum _ LT1510/LT1510-5 TECHNOLOGY C o n s ta n t-V o lta g e / C o n sta n t-C u rre n t Battery C h a rg e r FCRTURCS • Charges NiCd, NiMH and Lithium-Ion Batteries — Only One V10W Resistor Is Needed to Program Charging Current ■ High Efficiency Current Mode PWM with 1.5A

Contextual Info: ba MR f l ST 0017211 350 • MITSUBISHI RF POWER MODULE M57749 903-905MHZ, 12.5V, 7W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM PIN : Pin ®VCCi @VCC2 @VCC3 ®Po ®GND : RF INPUT : 1st. DC SUPPLY : 2nd. DC SUPPLY : 3rd. DC SUPPLY : RF OUTPUT

PCIe 4X

Abstract: QC200 osc xtal 25MHZ osc xtal 25MHZ function XTAL 25MHZ Datasheet MO-220
Contextual Info: PRELIMINARY ICS841S012I CRYSTAL-TO-0.7V DIFFERENTIAL HCSL/ LVCMOS FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS841S012I is an optimized PCIe, sRIO and ICS Gigabit Ethernet Frequency Synthesizer and a HiPerClockS member of HiperClock s™ family of high performance clock solutions from IDT. The ICS841S012I

Contextual Info: r r u n m m TECH N O LO G Y C o n s t a n t - C u r r e n t/ V o lt a g e H ig h E ffic ie n c y B a tte ry C h a r g e r FCRTURCS D C S C R IP T IO n • Simple Charging of Li-Ion, NiMH and NiCd Batteries ■ Very High Efficiency: Up to 97% ■ Precision 0.5% Charging Voltage Accuracy

ICS44s

Abstract: ICS844S012I-01 844S012BKI-01LFT ICS844S012BKI-01 MO-220 ics844s
Contextual Info: Crystal-to-LVDS/LVCMOS Frequency Synthesizer ICS844S012I-01 DATA SHEET General Description Features The ICS844S012I-01 is an optimized PCIe, sRIO and Gigabit Ethernet Frequency Synthesizer. The HiPerClockS ICS844S012I-01 uses a 25MHz parallel resonant crystal to generate 33.33MHz - 200MHz clock signals,

Contextual Info: Crystal-to-LVDS/LVCMOS Frequency Synthesizer ICS844S012I DATA SHEET General Description Features The ICS844S012I is an optimized PCIe, sRIO and Gigabit Ethernet Frequency Synthesizer. The HiPerClockS ICS844S012I uses a 25MHz parallel resonant crystal to generate 33.33MHz - 200MHz clock signals,

ICS844S012AIL

Abstract: ICS844S012AKI ICS844S012I MO-220 ICS44s
Contextual Info: Crystal-to-LVDS/LVCMOS Frequency Synthesizer ICS844S012I DATA SHEET General Description Features The ICS844S012I is an optimized PCIe, sRIO and Gigabit Ethernet Frequency Synthesizer. The HiPerClockS ICS844S012I uses a 25MHz parallel resonant crystal to generate 33.33MHz - 200MHz clock signals,

GE 4N35

Abstract: 4n35 optoisolator motorola 4n35 4N36 Control 4N35 4N35 VDE0160 VDE0832 VDE0833 C4N35
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 35 4N 36 4N 37 6-Pin D IP O ptoisolators Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • • • •