BA CAPACITANCE DIODE Search Results

transistor a950

Abstract: A950 a950 transistor a950 transistor datasheet 592 diode marking A950 Q62702-A950
Contextual Info: BA 592 Silicon RF Switching Diode BA 592 Preliminary Data ● For VHF band switching in TV/VTR tuners ● Low forward resistance, small capacitance, small inductance Type Marking Ordering Code tape and reel BA 592 blue S Q62702-A950 Pin Configuration Package

diode 244

Abstract: diode 243 diode ba 244 BA244S BA244 BA243 ba 243 rf DIODE BA243 Q62702-A607 ba capacitance diode
Contextual Info: SIEM EN S BA 243 S BA 244 S Silicon RF Switching Diodes • For VHF band switching in TV tuners • Low forward resistance and low diode capacitance • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 243 S yellow Q62702-A607 DO-35 DHD

Contextual Info: SIEMENS Silicon RF Switching Diode BA 592 Preliminary Data • For VHF band switching in TV/VTR tuners • Low forward resistance, small capacitance, small inductance Type Marking Ordering Code tape and reel BA 592 blue S Q62702-A950 Pin Configuration '

Contextual Info: SIEM ENS BA 892 Silicon Rf Switching Diode Preliminary data • For VH F band switching in TV / VTR tuners • Low forward resistance, small capacitance, small inductance Type Marking Ordering Code Pin Configuration BA 892 A Q62702-A1214 1 =C 2 =A Package

Q62702-A1214

Abstract: GP 018 DIODE VES05991 diode marking AU
Contextual Info: BA 892 Silicon Rf Switching Diode Preliminary data • For VHF band switching 2 in TV / VTR tuners • Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Ordering Code Pin Configuration Package BA 892 A Q62702-A1214 1=C SCD-80

592 diode

Abstract: BA592
Contextual Info: BA 592 Silicon RF Switching Diode 2 • For VHF band switching in TV / VTR tuners 1 • Low forward resistance, small capacitance small inductance VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BA 592 blue S 1=C SOD-323 2=A Maximum Ratings Parameter

diode ba110

Abstract: BA142 BA110 BA 141 diode BB142 BB141 ba112 BA 30 C Diode BAY 45 S3 marking DIODE
Contextual Info: Silicon Capacitance Diodes Variable Capacitance Silcon Diodes for automatic frequency control Type BA 110 BA 110 G 1 C h a ra c te ris tic s @ T am b = 2 5 °C @ VR = 2 V f = 30 M Hz @ Ip = 60 m A @ VR = 10V r¡ Q Q l/f V I r nA 1 540 < 0,95 < 50 V BR}R V

Contextual Info: BA 892-02V Silicon Rf Switching Diode
For band switching in TV / VTR tuners up to 2GHz 2
Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Pin Configuration Package BA 892-02V AA 1=C SC-79 2=A Maximum Ratings Parameter

Contextual Info: BA 892 Silicon Rf Switching Diode
For band switching in TV / VTR tuners up to 2GHz 2
Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Pin Configuration Package BA 892 A 1=C SCD-80 2=A Maximum Ratings Parameter Symbol

BB205

Abstract: BB105 BB209 BB109 Din 5461 BA111 BA121 BB204 BB205 g BB104
Contextual Info: Dioden Capacitance diodes Type Group Fig. Nr. Maximum ratings Characteristics Cd £/r = 3 V CD ( i / R = 3 V ) CD at V CD ( t / R = 25 V) CD (£/r = 30 V) PF ^R V 's at O ^R V BA 111 10 20 - - 4 5 -6 5 2 0.5 2 BA 121 10 30 - - 8 -1 2 2 0.9 2 50 10 30 -

BA111

Abstract: 741532 TFK U 111 B ba capacitance diode TUNER Ba 111
Contextual Info: BA 111 Silizium-Diffusions-Kapazitäts-Diode Silicon diffusion capacitance diode Anwendungen: Automatische Nachstimmschaltungen in VHF-Tunern Applications: AFC in VHF tuner Abmessungen in mm Dimensions in mm |L II .- J - -2 6 - - 1 1

BA125 Diode

Abstract: 74118 diode BA125 BA125
Contextual Info: BA 125 Silizium-Kapazitäts-Diode Silicon capacitance diode Anwendungen: Automatische Nachstimmschaltungen in VHF-Tunern Applications: AFC in VHF tuner Abmessungen in mm Dimensions in mm Ir" r\ . . . — II . 1 1— — -L=H»I— . . l Normgehäuse

Contextual Info: Band-switching diode BA 892 FEATURES • Small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance. 1 APPLICATIONS · Low loss band-switching in VHF television tuners 2 · Surface mount band-switching circuits. DESCRIPTION

BA124 Diode

Abstract: BA124
Contextual Info: BA 124 Silizium-Kapazitäts-Diode Silicon capacitance diode Anwendungen: Automatische Nachstimmschaltungen in VHF-Turiern Applications: AFC in VHF tuner Abmessungen in mm Dimensions in mm 02,6 Cl 5 117 0 0,55 I Normgehäuse Case 5 1 A 2 DIN 41880 JEDEC DO 7

diode BA121

Abstract: BA121 diode u2J BA121 Diode
Contextual Info: € 1^ BA 121 'W Silizium-Kapazitäts-Diode Silicon capacitance diode Anwendungen: Nachstimmschaltungen in VHF- und UHF-TV-Tunern Applications: AFC in VHF and UHF-TV tuners Abmessungen In mm Dlmensions in mm KATHODE - > II1 — —1 I 1 1M Hl Normgehäuse

DIODE S4 08

Abstract: smd diode 891 BA891 DIODE S4 65 smd diode S4 S4 DIODE ultra low forward voltage diode diode s4 smd diode nh smd diode JS
Contextual Info: LESHAN RADIO COMPANY, LTD. Band-switching diode BA 891 FEATURES • Ultra small plastic SMD package · Low diode capacitance: max. 1.05 pF · Low diode forward resistance: max. 0.7 Ω · Small inductance. APPLICATIONS · Low loss band-switching in VHF television tuners

S1912

Abstract: 1S1912 smd diode JS BA277 smd diode S4 s4 79 diode smd Diode S4 10 35 DIODE
Contextual Info: LESHAN RADIO COMPANY, LTD. Band-switching diode BA 277 FEATURES • Small plastic SMD package · Continuous reverse voltage: max. 35 V · Continuous forward current: max. 100 mA · Low diode capacitance: max. 1.2 pF · Low diode forward resistance: max. 0.7 Ω.

Contextual Info: SIEMENS Silicon RF Switching Diode BA592 • For VHF band switching in TV/VTR tuners • Low forward resistance, small capacitance, small inductance Type Marking Ordering Code tape and reel BA 592 blue S Q62702-A950 Pin Configuration Package SOD-323 o- k j —— »

Contextual Info: Band-switching diode BA 891 FEATURES • Ultra small plastic SMD package · Low diode capacitance: max. 1.05 pF · Low diode forward resistance: max. 0.7 Ω · Small inductance. APPLICATIONS · Low loss band-switching in VHF television tuners · Surface mount band-switching circuits.

BB910

Contextual Info: bTE 5 N AMER P H I L I P S / D I S C R E T E • bb 5 3 ^ 3 1 I DDEtj43b 144 BB910 VHF VARIABLE CAPACITANCE DIODE The BB 910 is a V H F variable capacitance d iode in planar te chnology w ith a very high capacitance ra tio intended fo r V H F -ba n d B u p to 4 6 0 M Hz in all-band tuners.

1300313

Abstract: JE 13003
Contextual Info: b7 {DISCRETE/OPTO} 9 09 725 0 T OS HI BA D eT| TOTVHSG 000^355 5 | ~ D IS C R E T E / O P T O 6 7c 09355 ; D " Silicon EpitaxiaL P la n a r Ty pe 1SV100 Variable Capacitance Diode AM RADIO BAND TUNING APPLICATIONS. Unit in mm 4 .2 MAX. FEATURES: . High Capacitance Ratio : C]_v/c9V= 17(Min.)

DIODE BA243

Abstract: BA243 BA243 diode 0588 JEDEC to 243 diode 244 BA244
Contextual Info: A E G CORP 17E QQETMab o o o ' m s D & 2 • BA 243 •BA 244 TjTSLGiiFüfllîiBSIMelectronic Creative Techno'ogres Silicon Planar Diodes A p p lica tio n s: Band selector in VHF-tuners Features: • Low differential forward resistance in VHF-range Low diode capacitance

Contextual Info: Band-switching diode BA 277 FEATURES • Small plastic SMD package · Continuous reverse voltage: max. 35 V · Continuous forward current: max. 100 mA · Low diode capacitance: max. 1.2 pF · Low diode forward resistance: max. 0.7 Ω. APPLICATIONS · Low loss band switching in VHF television tuners.

Contextual Info: N AMER PHILIPS/DISCRETE bbSB'lBl ODSblMa 113 • APX BA 281 blE D A SILICON RATIO DETECTOR DIODE Silicon planar epitaxial diode in DO-35 envelope, intended for use in ratio detector circuits. Due to small spreads of forward voltage at low currents and of junction capacitance, the diodes can be used as