BA 75 IS Search Results

4154 diode

Abstract: BAW75 R-1 GREEN CATHODE diode
Contextual Info: BAW75 Silicon planar logical diode BA W 75 is a silicon planar diode in "double heat sink" technique in a case 56 A 2 DIN 41 883 D O -35 . The cathode is marked by a green colour ring. BAW 75 is particularly suitable for use as high-speed switch in computers as well as for general

V23614-A102-A57

Abstract: C42334-A285 V23600-A1027-C1 C4233 V23614-A602 V23600A1027C1
Contextual Info: Coaxial Connectors Series 1,0/2,3 S e rie s 1,0/2,3 50 a an d 75 Q 1 he se connectors com ply with C E C C 22230. T he connectors for 75 f l are suitable for operation up to 2 G H z. The design is ba se d on the pin-and-socket principle, i.e. the inner and outer conductors

Contextual Info: 71 Series High-Performance, Horizontal Single-Port Jacks • Enhanced Shield For Commonly Ordered Parts See Page 25 i Eight-Contact, Eight-Position Enhanced Shield PG4-BA Style Standard Footprint | • § : , ]— 148|3 75] TO i HIGHEST POINT | OF BEAU 083 (2.12] TO —

rg59 connector

Contextual Info: Lead BNC to BNC Specifications Cable Type Coaxial Cable Type RG59 OFC RG59 Connector Type A Connector Type B BNC Plug BNC Plug Page <1> Impedance R Lead Length (m) Part Number 75 1.5 BA-BVL6002 16/05/08 V1.0 Lead BNC to BNC Notes: International Sales Offices:

Contextual Info: Bussmann Telpower DC Power Distribution Fuses TPL ® 170 Volts, DC, 70-800 Amps Dimensional Data 2.66" ± .031 (67.5mm) (– 0.79) 2.19" (55.6mm) 1.91" (48.4mm) 1.0" 1.16" (± 0.02) (25.4mm) (29.4mm) (– 0.51) .75" (19.1mm) .33" .19" (8.3mm) (4.8mm) TPL-BA, TPL-BB, TPL-BC, TPL-BD, TPL-BE,

Contextual Info: CM75RX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts AV AU AW AQ AE K BA Y DETAIL "B" AH Q AM BB Y BB Y BB Y MN BC BB Y W 20 19 AX Y DETAIL "C" 18 17

Contextual Info: CM75RX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts AV AU AW AQ AE K BB BA Y DETAIL "B" AH Q AM Y BB BB Y AX Y DETAIL "C" W 20 19 18 17 16 15 AZ 12 11

Contextual Info: CM75RX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts AV AU AW 45° K AT AE BE K BA BD DETAIL "B" AH Q AM BB Y BB Y BB Y K T MN BC BB Y W 20 19 AX Y DETAIL "C"

Contextual Info: BNC Series PANEL PLUG mounting detail Straight /-A H oles t dia fixing hole sizes see part number M 2 .5 x 0 .4 5 — 6H=D 3.56 UNF=E 4.40 UNC=F 6 BA=G 3.0mm=H 2.8mm=K 17.5 square Part Number Impedance 50 ohm B35 C86 • 999 t99 75 ohm B37 C86 • 999 f9 9

Contextual Info: Sectl 0 n 5 H E RAYTHEON/ D | fl | _ LM111/LH2111 S E M IC O N D U C TO R LM111/LH2111 Voltage Comparators Features • ■ ■ ■ 75 R73 ba 0 0 0 b l 3 5 Low input offset current — 10 nA max Low input bias current — 100 nA max. Operates from a single +5V supply

KA206

Abstract: KZZ47 KZZ46 tesla schaltkreise KA206S KA225 KZZ45 KA207 KA221 KA22235
Contextual Info: TESLA ELEKTRONICKE 35E D • flTSDS4H QDnai34 1D3 ■ TELC ~T=ö -Oi SILICO N HIGH S P EED DIO D ES SILIZIUM S EH R S C H N E LLE DIODEN KA206 mA V 75 50 Characteristic data • • mW ba Uf °c V at bei Kenndaten If Ir mA pA at bei Ui trr from von If = 5 mA

250v t855e4

Abstract: ADK1807 YA-2RB19-A64 ADK1
Contextual Info: < >I slCM O ro m icro swtt <t a Honeywell Division FED .M F B .CO D E CATALOG L I S T I N G YA-2RB19-A64 ADK1807 SWITCH - BA SIC 9 1 9 2 9 X .75 ±.01 CD < i ST AIN LESS STEEL PLUNGER 2 m 01 n CNJ O 1.03 ±-02 OPERATING POSITION >Lü O < jar.|40t-SS? A CO

J223

Contextual Info: FEATURES • D C -1 5 0 MHz ■ 0.75 dB Insertion Loss ■ 110 dB Isolation ■ Non-Reflective SP2T ■ SMA Connectors SO LD ER T E R M IN A L -B 4 P L S -1 (2 P L S ) 4 3© (o )J2 2© BA SIC so .75 ± .03 J1© 1© J2 -1 (FA ILS A FE) 50 .X X .X X X a

T126

Contextual Info: CAtALOGUE LISTING Dü œ o d œ s t c m b V5B120DB TCH-BA OO ±0 .I 3.3 ±0. I5 6.35 Û i Q 0.3 O 4 . 75 T" in + 0.2 - 0.0 0 \ .4 HOLE IN T E R M I N A L S 2 L±J <J < _l û_ ÜJ OC ±0.25 20.2 PRETRAVEL h* 0) + 0 . IO 03. I -0.05 CD MSo: iii *55 <5 c\j

MP7523KN

Abstract: 7523a
Contextual Info: M P 7 5 23 /X R D 75 2 3 15 V CM O S M ultiplying 8-Bit Digital-to-Analog C onverter .the analog plus com pany VJSSSFÆ ÊFâ January 1996-2 FEATURES APPLICATIONS Full F o u r - Q u a d r a n t Mul t i pl yi ng Low Feedthrough: F as t Settling: Ba t t e r y O p e ra t e d E q u i p m e n t

74150

Abstract: 18E DBM panasonic resistors ERA marking code CH1770 CH1765-01 fsk modem 1200 HM6116 interface z 80 with 8251a usart marking code 1AW 74LS374 74LS373 74ls373
Contextual Info: CERÍ1ETEK M I C R O E L EC TR ON IC S IflE D 1 7 0 0 • EQ05flD3 5 ■ S E R I E ST-75 -33-05 Cermetek mtoroatootronlo« 130» B O * IE O A » A V I SU M N YY A lt CA •<««« T lL .U 0 * t 7 t a - W « CH1765 » 6 0 / 1 2 6 0 BA U D IM T K lL t& tM T tftODCM

8 channel RF transmitter and Receiver circuit for RC airplane

Abstract: BA rx transistor T45 to DB9 DL0054 toshiba rdram
Contextual Info: TC59RM716 8 MB/RB-8,-7,-6 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAMTM (Direct RDRAMTM) is a general-purpose high performance memory device suitable for use in a broad range of applications including computer memory, graphics, video and any other applications

256-288 MBit Direct RDRAM

Abstract: DL0054 da53 BA rx transistor BYt 32 TC59RM818MB-6 TC59RM818MB-7 TC59RM818MB-8 RDRAM SOP
Contextual Info: TC59RM816 8 MB-8,-7,-6 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAMTM (Direct RDRAMTM) is a general-purpose high performance memory device suitable for use in a broad range of applications including computer memory, graphics, video and any other applications

M2S56D20

Abstract: M2S56D20ATP M2S56D30ATP
Contextual Info: MITSUBISHI LSIs DDR SDRAM Rev.1.44 M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10 M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10 Mar. '02 256M Double Data Rate Synchronous DRAM Contents are subject to change without notice. DESCRIPTION M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit,

Contextual Info: MITSUBISHI LSIs DDR SDRAM Rev.1.43 M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10 M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10 Jan. '01 256M Double Data Rate Synchronous DRAM Contents are subject to change without notice. DESCRIPTION M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit,

Contextual Info: DDR SDRAM Rev.1.31 Dec. '01 MITSUBISHI LSIs M2S56D20/ 30/ 40ATP –75A, -75, -10 M2S56D20/ 30/ 40AKT –75A, -75, -10 256M Double Data Rate Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit,

DDR RAM 512M

Abstract: DDR dRAM 512M M2S12D20TP M2S12D30TP
Contextual Info: DDR SDRAM Rev.1.1 MITSUBISHI LSIs M2S12D20/ 30TP -75, -75L, -10, -10L MITSUBISHI Feb.ELECTRIC '02 512M Double Data Rate Synchronous DRAM DESCRIPTION M2S12D20TP is a 4-bank x 33,554,432-word x 4-bit, M2S12D30TP is a 4-bank x 16,777,216-word x 8-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are

UGSV1286T

Contextual Info: UGSV1286T Data sheets can be downloaded at www.unigen.com 128Mb CMOS SYNCHRONOUS DRAM General Description The UGSV1286T is a 134,217,728bit CMOS Synchronous DRAM. organized as 4 banks of 2,097,152 words by 16 bits. All inputs and outputs are synchronized with the rising edge of the clock input and all levels are compatible with LVTTL.

Sonnenschein SL-770

Abstract: Sonnenschein SL-340 SL-340 ica 700 Y Sonnenschein SL-790 SL-350 SL-386 LI 20 AB diode ed 85 SL-550
Contextual Info: Inorganic Li hium Ba eries Shor Form Ca a ogue The Sonnenschein Li hium Ba ery The Sonnenschein Li hium Ba ery is a componen ha can be permanen y connec ed o a circui , in many cases for he ife ime of he equipmen . I s major advanages are: High ce vo age.