Q65110A3624
Abstract: No abstract text available
Text: Power TOPLED long life Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: weißes P-LCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch
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Q65110A7885
Abstract: LBE6SG BA 516 diode U/25/20/TN26/15/850/smd led 5050 0.5 w datasheet
Text: Power TOPLED long life Enhanced optical Power LED ThinGaN Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Released Besondere Merkmale • Gehäusetyp: weißes P-LCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch
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D-93055
Q65110A7885
LBE6SG
BA 516 diode
U/25/20/TN26/15/850/smd led 5050 0.5 w datasheet
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Q65111A0322
Abstract: No abstract text available
Text: Power TOPLED long life Enhanced optical Power LED ThinGaN Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Released Besondere Merkmale • Gehäusetyp: weißes PLCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch
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D-93055
Q65111A0322
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diode lt 0236
Abstract: Q65110A7885 LBE6SG E6SG-AABA-36-1 lt e6sg E6SG-T1U2-35 9 BJE 61 lt e6sg-aaba
Text: Power TOPLED long life Enhanced optical Power LED ThinGaN Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Released Besondere Merkmale • Gehäusetyp: weißes P-LCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch
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Untitled
Abstract: No abstract text available
Text: Power TOPLED long life Enhanced optical Power LED ThinGaN Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Released Besondere Merkmale • Gehäusetyp: weißes PLCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch
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BA 516 diode
Abstract: No abstract text available
Text: Power TOPLED long life Enhanced optical Power LED ThinGaN Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Released Besondere Merkmale • Gehäusetyp: weißes PLCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch
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D-93055
BA 516 diode
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Untitled
Abstract: No abstract text available
Text: Power TOPLED long life Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: weißes P-LCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch
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e6sg
Abstract: S2U1 diode lt 0236 GPLY6135
Text: Power TOPLED long life Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: weißes P-LCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch
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Untitled
Abstract: No abstract text available
Text: Power TOPLED long life Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: weißes P-LCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch
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diode lt 0236
Abstract: No abstract text available
Text: Power TOPLED long life Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: weißes P-LCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch
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D-93049
diode lt 0236
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Untitled
Abstract: No abstract text available
Text: Power TOPLED long life Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LB E6SG, LT E6SG Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: weißes P-LCC-4 Gehäuse, farbloser klarer Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch
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NX8501
Abstract: NX8501AC NX8501AC-BA NX8501AC-CA NX8501BC NX8501CC 25TC
Text: DATA SHEET LASER DIODE NX8501 Series 1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB Distributed Feed-Back laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation
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NX8501
TA-NWT-000983
NX8501AC
NX8501AC-BA
NX8501AC-CA
NX8501BC
NX8501CC
25TC
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Untitled
Abstract: No abstract text available
Text: Product Brief January 2002 ORCA OR3LxxxB Series Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, 0.25 µm 5-level metal technology. 2.5 V internal supply voltage and 3.3 V I/O supply voltage for speed and compatibility.
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16-bit
208-Pin
240-Pin
352-Pin
432-Pin
680-Pin
OR3L165B
OR3L225B
PN00-012FPGA
PN99-053FPGA)
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MOV 270/20
Abstract: 2322 640 90007 NTC thermistor philips phct 203 VARISTOR 275 K20 cma 00124 BC 2222 037 71109 ic 40154 2322 661 91002 UAA 1006 34821
Text: Information Product guide 200 BCcomp Information World wide web New products and highlights Series index Ceramic capacitors Film capacitors Electrolytic capacitors Variable capacitors Linear resistors Non-linear resistors Switches and potentiometers 02/2003
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bgt S2000
Abstract: MC68B09 HD6809P NAFI adcb 27 ASSEMBLER RR00110 SAA 1025 HD68B09 AOCB
Text: HD6809,HD68A09,HD68B09 M PU M icro Processing Unit The HD6809 is a revolutionary high performance 8-bit microprocessor which supports modem programming tech niques such as position independence, reentrancy, and modular programming. This third-generation addition to the HMCS6800 family has
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HD6809
HD68A09
HD68B09
HMCS6800
HD6809,
HD68A09,
bgt S2000
MC68B09
HD6809P
NAFI
adcb 27
ASSEMBLER
RR00110
SAA 1025
HD68B09
AOCB
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GaAs IRED & PHOTO-TRANSISTOR TLP630 Programmable Controllers AC/DC-Input Module Telecommunication The Toshiba TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel in a six lead
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TLP630
5000Vrms
UL1577,
E67349
TLP630
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bs 103f
Abstract: 11A3 ST MC68B09
Text: HD6809,HD68A09,HD68B09 M PU Micro Processing Unit The HD6809 is a revolutionary high performance 8-bit microprocessor which supports modem programming tech niques such as position independence, reentrancy, and modular programming. This third-generation addition to the HMCS6600 family has
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HD6809
HD68A09
HD68B09
HMCS6600
HD6809,
HD68A09,
bs 103f
11A3 ST
MC68B09
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HD63C09EP
Abstract: HD63B09EP HD63C09E-CMOS HD63C09E OT31 saa 1030 hd63c09ec Hitachi HD63B09 hitachi HD6309e HD63B09E
Text: HD63B09E,HD63C09E-CMOS M P U M icro Processing Unit The HD6309E is the highest 8-bit microprocessor o f HMCS6800 family, which is just compatible w ith the con ventional HD6809E. The HD6309E has hardware and software features which make it an ideal processor for higher level language execution or
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HD63B09E
HD63C09E--------CMOS
HD6309E
HMCS6800
HD6809E.
HD6809E
HD63B09E,
HD63C09EP
HD63B09EP
HD63C09E-CMOS
HD63C09E
OT31
saa 1030
hd63c09ec
Hitachi HD63B09
hitachi HD6309e
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nsp 106 thermistor
Abstract: nsp 105 thermistor nsp thermistor 106 nsp thermistor 10megohms 1N4001 general diode purpose surface mount 1N4001 SMT 1210 potentiometer cross reference chart
Text: Table of Contents and Selection Chart ALUMINUM AND TANTALUM ELECTROLYTIC CAPACITORS LEADED AXIAL SUB-MINIATURE TYPES RADIAL LOW IMPEDANCE HIGH RELIABILITY TYPES RADIAL LOW LEAKAGE TYPES RADIAL SUPER-MINIATURE TYPES RADIAL STANDARD TYPES Type Series Application/Feature
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1N4001
1N4007)
1N5817
1N5819)
nsp 106 thermistor
nsp 105 thermistor
nsp thermistor 106
nsp thermistor
10megohms
1N4001 general diode purpose surface mount
1N4001 SMT 1210
potentiometer cross reference chart
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transistor smd DAG
Abstract: smd transistor asy lcd inverter n mosfet cross reference smd transistor asy EA TRANSISTOR ASY 75 Royer oscillator diode d7b lm 6358 MAX753
Text: 19-0197: Rev 1:1/9 5 CCFL B a c k l i g h t a n d LCD C o n t r a s t C o n t r o l l e r s Both the backplane bias and the CCFL su p p ly can be shut down independently. When both sections are shut down, su p p ly current drops to 25|iA. The LCD contrast
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AX753/M
AX754
MAX753/MAX754
transistor smd DAG
smd transistor asy
lcd inverter n mosfet cross reference
smd transistor asy EA
TRANSISTOR ASY 75
Royer oscillator
diode d7b
lm 6358
MAX753
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BAS516 High-speed diode 1998 Aug 31 Product specification File under Discrete Semiconductors, SC01 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed diode BAS516 PINNING FEATURES
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BAS516
BAS516
MAM408
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em 518 diode
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES | QM50CY-H | MEDIUM POWER SWITCHING USE \ INSULATED TYPE ? QM50CY-H • lc Collector c u rre n t. • Vcex C ollector-em itter v o lta g e . DC current g a in . • hFE 50A ! 600V I 75 I
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QM50CY-H
E80276
E80271
em 518 diode
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Untitled
Abstract: No abstract text available
Text: JV\JYXAJV\ 19-0263: Rev 1; 7/95 12V or Adjustable, High-Efficiency, Low IQ , Step-Up DC DC C ontroller The M A X 1771 s te p -u p s w itc h in g c o n tro lle r p ro v id e s 90% efficie n cy over a 30m A to 2A load. A unique cu r re n t-lim ite d p u ls e -fre q u e n c y -m o d u la tio n PFM co n tro l
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CMPZ5240/
MMBZ5240BL
300mA,
DD141bfl
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PCR 406 J
Abstract: Hitachi HD68B09E HD6309 PCF HITACHI PS5 1020 HD6309e SAA 1025 HD68B09E HD6809E LM 8002
Text: H D 6809E,H D 68A 09E, HD68B09E M P U M i c r o Processing Unit The H D 6809E is a revolutionary high perform ance 8-bit microprocessor which supports m odern programming techniques such as position independence, reentrancy, and m odular programming. This third-generation addition to th e HMCS6800 family has
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HD6809E
HD68A09E,
HD68B09E
HMCS6800
JA000
PCR 406 J
Hitachi HD68B09E
HD6309
PCF HITACHI
PS5 1020
HD6309e
SAA 1025
HD68B09E
LM 8002
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