BA 2ND YEAR DATE SHEET Search Results
BA 2ND YEAR DATE SHEET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MSP430F2274MDATEP |
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16-bit Ultra-Low-Power Micro controller, 32kB Flash, 1K RAM 38-TSSOP -55 to 125 |
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AMC1203PSA |
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1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator 8-SOP -40 to 105 |
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AMC1203BPSA |
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1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator 8-SOP -40 to 105 |
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AMC1203DUBR |
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1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator 8-SOP -40 to 105 |
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AMC1203BDWR |
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1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator 16-SOIC -40 to 105 |
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BA 2ND YEAR DATE SHEET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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ba 2nd year date sheetContextual Info: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com Approval Sheet For Product Specification Issued Date: May, 28, 2008 |
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TA0839A FR-71S03-01 ba 2nd year date sheet | |
TA0839AContextual Info: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com Approval Sheet For Product Specification Issued Date: Aug, 21, 2008 |
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TA0839A FR-71S03-01 TA0839A | |
Contextual Info: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com Approval Sheet For Product Specification Issued Date: Mar, 13, 2008 |
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TA0839A FR-71S03-01 | |
Contextual Info: Rev : 005 Product Family Data Sheet LC006A - COB Chip on Board LED Introduction Features • 6.4 COB LED : 18.0 x 13.5 x t 6.4 (mm) · InGaN/GaN MQW LED with long-time reliability · Lead (Pd) free product - RoHS compliant Applications · Spot / Downlighting |
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LC006A | |
502a hall sensor
Abstract: hall sensor smd 502A TO-92UA SMD Hall sensors code se micronas ordering codes SMD Hall sensors code C to92ua hal 502a
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6200-249-2E 502a hall sensor hall sensor smd 502A TO-92UA SMD Hall sensors code se micronas ordering codes SMD Hall sensors code C to92ua hal 502a | |
stv 312
Abstract: TX09D70VM1CBA 319th 2708 D2390 REV.A LCD Hitachi Scans-001
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OCR Scan |
TX09D70VM1CBA 7B64PS 2701-TX09D70VM1 2702-TX09D70VM1 2703-TX09D70VM1 2704-TX09D70VM1 stv 312 TX09D70VM1CBA 319th 2708 D2390 REV.A LCD Hitachi Scans-001 | |
THM5421C
Abstract: M22139 C7089U1006 temperature sensor circuit diagram of remote control door lock system m23522 M23544 W8835A1004 W8735A1005-EnviraCOM C7189U1005 heat sensor with fan cooling
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W8835A TH9421C UV100E2009 UV100E1043 UV100E3007 D509151; H25192; H25193 THM5421C M22139 C7089U1006 temperature sensor circuit diagram of remote control door lock system m23522 M23544 W8835A1004 W8735A1005-EnviraCOM C7189U1005 heat sensor with fan cooling | |
Contextual Info: Regulations No. KG3F6688/K Total pages Page 13 1 Product Specification 3528 Package Size Type Chip LED Type Number:LNJ024X4ARA Panasonic Unified Parts Number:LNJ024X4ARA Semiconductor Company, Panasonic Corporation Established by Applied by Checked by |
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KG3F6688/K LNJ024X4ARA | |
Contextual Info: DATA SHEET 512MB Unbuffered SDRAM S.O.DIMM HB52RF649DC-B 64M words x 72 bits, 2 bank HB52RD649DC-B (64M words × 72 bits, 2 bank) Description Features The HB52RF649DC, HB52RD649DC are a 64M × 72 × 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 18 |
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512MB HB52RF649DC-B HB52RD649DC-B HB52RF649DC, HB52RD649DC 144-pin M01E0107 E0223H30 | |
Contextual Info: DATA SHEET 1 GB Registered SDRAM DIMM EBS11RC4ACNA 128M words x 72 bits, 2 banks Description Features The EBS11RC4ACNA is 128M words × 72 bits, 2 banks Synchronous Dynamic RAM Registered Module, mounted 36 pieces of 256M bits SDRAM sealed in TCP package. This module provides high |
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EBS11RC4ACNA EBS11RC4ACNA 168-pin 20inch) 133MHz M01E0107 E0106E30 | |
Contextual Info: PRELIMINARY DATA SHEET 512MB Unbuffered SDRAM S.O.DIMM HB52RF649DC-B 64M words x 72 bits, 2 bank HB52RD649DC-B (64M words × 72 bits, 2 bank) Description Features The HB52RF649DC, HB52RD649DC are a 64M × 72 × 2 banks Synchronous Dynamic RAM Small Outline |
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512MB HB52RF649DC-B HB52RD649DC-B HB52RF649DC, HB52RD649DC HM5225805BTB) 144-pin M01E0107 E0223H10 | |
Contextual Info: PRELIMINARY DATA SHEET 256MB Unbuffered SDRAM Micro DIMM HB52RF328GB-B 32M words x 64 bits, 1 bank HB52RD328GB-B (32M words × 64 bits, 1 bank) Features Description EO L The HB52RF328GB and HB52RD328GB are a 32M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual |
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256MB HB52RF328GB-B HB52RD328GB-B HB52RF328GB HB52RD328GB HM522805BTB/BLTB) 144-pin M01E0107 E0202H10 | |
Contextual Info: DATA SHEET 2GB Registered SDRAM DIMM EBS21RC2ACNA 256M words x 72 bits, 2 banks Description Features The EBS21RC2ACNA is 256M words × 72 bits, 2 banks Synchronous Dynamic RAM Registered Module, mounted 72 pieces of 256M bits SDRAM sealed in TCP package. This module provides high density and |
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EBS21RC2ACNA EBS21RC2ACNA 168-pin 65inch 133MHz M01E0107 E0105E50 | |
Contextual Info: PRELIMINARY DATA SHEET 2GB Registered SDRAM DIMM EBS21RC2ACNA 256M words x 72 bits, 2 banks Description Features The EBS21RC2ACNA is 256M words × 72 bits, 2 banks Synchronous Dynamic RAM Registered Module, mounted 72 pieces of 256M bits SDRAM sealed in |
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EBS21RC2ACNA EBS21RC2ACNA 168-pin M01E0107 E0105E40 | |
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PC133 registered reference design
Abstract: elpida
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EBS21RC2ACNZ 256M-word 72-bit, EBS21RC2ACNZ 256M-bit EDS2502ACN) E0105E20 PC133 registered reference design elpida | |
Contextual Info: PRELIMINARY DATA SHEET 256MB Unbuffered SDRAM Micro DIMM HB52RF328GB-B 32M words x 64 bits, 1 bank HB52RD328GB-B (32M words × 64 bits, 1 bank) Description Features The HB52RF328GB and HB52RD328GB are a 32M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual |
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256MB HB52RF328GB-B HB52RD328GB-B HB52RF328GB HB52RD328GB HM522805BTB/BLTB) 144-pin M01E0107 E0202H10 | |
Contextual Info: DATA SHEET 1 GB Registered SDRAM DIMM EBS11RC4ACNA 128M words x 72 bits, 2 banks Description Features The EBS11RC4ACNA is 128M words × 72 bits, 2 banks Synchronous Dynamic RAM Registered Module, mounted 36 pieces of 256M bits SDRAM sealed in TCP package. This module provides high |
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EBS11RC4ACNA EBS11RC4ACNA 168-pin 20inch) 133MHz M01E0107 E0106E30 | |
Contextual Info: DATA SHEET 2GB Registered SDRAM DIMM EBS21RC2ACNA 256M words x 72 bits, 2 banks Description Features The EBS21RC2ACNA is 256M words × 72 bits, 2 banks Synchronous Dynamic RAM Registered Module, mounted 72 pieces of 256M bits SDRAM sealed in TCP package. This module provides high density and |
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EBS21RC2ACNA EBS21RC2ACNA 168-pin 65inch 133MHz M01E0107 E0105E50 | |
Contextual Info: DATA SHEET 512MB Registered SDRAM DIMM EBS51RC4ACFC 64M words x 72 bits, 1 bank Description Features The EBS51RC4ACFC is 64M words × 72 bits, 1 bank Synchronous Dynamic RAM Registered Module, mounted 18 pieces of 256M bits SDRAM sealed in TSOP package. This module provides high density |
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512MB EBS51RC4ACFC EBS51RC4ACFC 168-pin 20inch) 133MHz M01E0107 E0108E30 | |
Contextual Info: DATA SHEET 512MB Registered SDRAM DIMM EBS51RC4ACFC 64M words x 72 bits, 1 bank Description Features The EBS51RC4ACFC is 64M words × 72 bits, 1 bank Synchronous Dynamic RAM Registered Module, mounted 18 pieces of 256M bits SDRAM sealed in TSOP package. This module provides high density |
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512MB EBS51RC4ACFC EBS51RC4ACFC 168-pin 20inch) 133MHz M01E0107 E0108E30 | |
EBS11RC4ACNAContextual Info: PRELIMINARY DATA SHEET 1 GB Registered SDRAM DIMM EBS11RC4ACNA 128M words x 72 bits, 2 banks Description Features The EBS11RC4ACNA is 128M words × 72 bits, 2 banks Synchronous Dynamic RAM Registered Module, mounted 36 pieces of 256M bits SDRAM (EDS2504ACN) sealed in TCP package. This module |
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EBS11RC4ACNA EBS11RC4ACNA EDS2504ACN) 168-pin 20inch) 133MHz M01E0107 E0106E20 | |
Contextual Info: DATA SHEET 512MB Unbuffered SDRAM S.O.DIMM HB52RF649DC-B 64M words x 72 bits, 2 bank HB52RD649DC-B (64M words × 72 bits, 2 bank) Description Features The HB52RF649DC, HB52RD649DC are a 64M × 72 × 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 18 |
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512MB HB52RF649DC-B HB52RD649DC-B HB52RF649DC, HB52RD649DC 144-pin M01E0107 E0223H30 | |
Contextual Info: PRELIMINARY DATA SHEET 512MB Registered SDRAM DIMM EBS51RC4ACFC 64M words x 72 bits, 1 bank Description Features The EBS51RC4ACFC is 64M words × 72 bits, 1 bank Synchronous Dynamic RAM Registered Module, mounted 18 pieces of 256M bits SDRAM (EDS2504ACTA) sealed in TSOP package. This |
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512MB EBS51RC4ACFC EBS51RC4ACFC EDS2504ACTA) 168-pin 20inch) 133MHz M01E0107 E0108E20 | |
transistor c118
Abstract: HB52RD328GB-A6
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256MB HB52RF328GB-B HB52RD328GB-B HB52RF328GB HB52RD328GB HM522805BTB/BLTB) 144-pin M01E0107 E0202H10 transistor c118 HB52RD328GB-A6 |