25C20
Abstract: C541U A65 SMD BDP 281 od3 tube datasheet PSB 21150 F pin rd-58 S44 SMD sei smd resistors smd code aux n ba
Text: D at a S h ee t, D S 1, O ct . 20 01 SIUC-BA S in gl e C hi p I S D N U S B Co nt ro ll er - Basic PSB 2155 Version 1.3 Wired C o m m u n i ca t i o n s N e v e r s t o p t h i n k i n g . Edition 2001-10-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
|
Original
|
PDF
|
D-81541
25C20
C541U
A65 SMD
BDP 281
od3 tube datasheet
PSB 21150 F pin
rd-58
S44 SMD
sei smd resistors
smd code aux n ba
|
78H68
Abstract: sj 7ba ba 10 g 8a acgf
Text: <9.%$7%$5!M <4968<CB""!$9MTDO"=O@LPHPQMO 31'6&5 6/ / $3: 2D@QROD * ;4 A A 8? '*3 +* M !A ;4 A 68@ 8A F@ B78 *<K"^]# +/. \ B: < 6 ( 8H8? '< +*(- 8 H'LG,0-'- N BC8D4 F< A : F8@ C8D4 FGD8 H4 ? 4 A 6;8 D4 F87(! 72 S `PbTS/24; =97<&8>77455=>6:<9?= 310,()*.&)&)(
|
Original
|
PDF
|
PbTS/24;
78H68
sj 7ba
ba 10 g 8a
acgf
|
Untitled
Abstract: No abstract text available
Text: 3B=*'/@6 #<?5"#&E$&9-88&53:-8'=-:>5>?;= $=;0@/?&@99-=D 7MI[\YMZ 9I SG4?* 6;4AA8? ' 9I"^]#$\Pf SA;4A68@8AF@B78 S&B:<6?8H8? /D4F87 %+ K ) =I / 0( \ ) =I / )+( $9 %*&( 6 S-CDBF86F87 F=%JIEF%. S+G4?<9<87466BD7<A:FB+
|
Original
|
PDF
|
D4F87
CDBF86F87
|
8h bm
Abstract: acgf 4a68 6BAA86F bc8d
Text: # # "%&$!"# &! # # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 6LHZ[XLY 1 ;J S E<A: ? 8 + ;4AA8?' B: <6 ' 8H8? . . BA@ 4J S A;4A68@ 8AF@ B78 S , G4? <9<87 466BD7<A: % # 9BDF4D : 8F4CC?<64F <BAE L 1 */ ,&* \" 1 */
|
Original
|
PDF
|
466BD
8h bm
acgf
4a68
6BAA86F
bc8d
|
Untitled
Abstract: No abstract text available
Text: # # &! ##:A0<&<,9=4=>:< #<:/?.>%?88,<C 6LHZ[XLY 1 ;J SE<A:?8+ ;4AA8?'B:<6'8H8? . .BA@4J S A;4A68@8AF@B78 L 1 */ ,&* \ 1 */ .&0 # S,G4?<9<87466BD7<A:% 9BDF4D:8F4CC?<64F<BAE
|
Original
|
PDF
|
|
E78E
Abstract: 6GDG ABV MARKING marking 4f6 bg marking FG-46 b787
Text: 3B=* +@6 # <?5" # & E $ & 9 -88& 53: -8 '=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ 9I S G4? * 6;4AA8? ' 9I"^]#$\Pf S A;4A68@ 8AF@ B78 S & B: <6 ?8H8? / D4F87 +( K ) =I / ),( \" ) =I / *+( $9 %)&- 6 S - CDBF86F87 F=%JIEF%. S + G4?<9<87 466BD7<A: +
|
Original
|
PDF
|
466BD
E78E
6GDG
ABV MARKING
marking 4f6
bg marking
FG-46
b787
|
marking 8d
Abstract: marking 8E 8d4f marking IBW 8D marking MARKING 3B
Text: 3B=*'/@6 # <?5" # & E $ & 9 -8 8& 53: -8'=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ 9I S G4? * 6;4AA8? ' 9I"^]#$\Pf S A;4A68@ 8AF@ B78 S & B: <6 ?8H8? / D4F87 %+ K ) =I / 0( \" ) =I / )+( $9 %*&( 6 S - CDBF86F87 F=%JIEF%. S + G4?<9<87 466BD7<A: FB +
|
Original
|
PDF
|
466BD
marking 8d
marking 8E
8d4f
marking IBW
8D marking
MARKING 3B
|
78H68
Abstract: marking 5U MARKING IBW marking A9 62b21
Text: 3C=*' C? @Y\R>@Cc ' : .99' 64;.9 >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ) ;I S ) 6;4AA8? ' ;I"^]#$\Pf S A;4A68@ 8AF@ B78 S ' B: <6 ?8H8? / D4F87 +( K ) >I / *- \" ) >I / +0 $; /&) 7 S H4?4A6;8 D4F87 S 7/ 'S. D4F87 + " .- * + S + 5 9D88 ?
|
Original
|
PDF
|
|
BD74
Abstract: No abstract text available
Text: 3A@* ,? %!$"#%a % 8 ,77% 429,7& <,9=4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY S * ;4AA8? S A;4A68@ 8AF@ B78 9H J ' 9H"^]#$\Pf (&0 W %(&.* 6 $9 S & B: <6 ?8H8? S BBFCD<AF4A7 C<AA<A: 6B@ C4F<5?8 I <F; , ) - , GC8D, ) - C46>4: 8E H8%-1 S H4?4A6;8 D4F87
|
Original
|
PDF
|
|
bd 9h
Abstract: ga6f
Text: 3CB0 @ c %!$"#% ' : .99' 64;.9 >.;?6?@<> $ ><1 A0@' A: : .>E 7NJ\]ZN[ ) 9H S * ;4AA8? %*-( J ) " %(&), 6 ' 9H"^]#$\Pf S A;4A68@ 8AF@ B78 & B: <6 ?8H8? $9 S H4?4A6;8 D4F87 S * 5 9D88 ?847 C?4F<A: + B" , 6B@ C?<4AF F=%H8-1 S BBFCD<AF6B@ C4F<5?8 FB , ) -
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: P0.A<I8EF4?0"ACHG03080D/4 P0 BJ8E046GBE0BEE86G870 P0?B4G<A:07=HFG45?80BHEG;0 HGCHG P0%BJ0)EB9<?80C.0!<:; *<0&5/*70 *,1*276010F440-(&7-326 46GBEL0HGB@4G<BA -8FG020&84FHE8@8AG %<:;G0"A7HFGE<4?0DH<C@8AG 30*0,8E<8F B00GB0CB00 *H470(HGCHG0)BJ8E0,HCC?<8F0
|
Original
|
PDF
|
ACHG03
46GBE0
BEE86G870
HFG45
276010F440-(
46GBEL0
-8FG020
84FHE8
B00GB0C
84GHE8F04A70
|
M5M4V16S30DTP
Abstract: M5M4V16S40 M5M4V16s30
Text: SDRAM Rev. 1.03E . «* „ 16M Synchronous DRAM „„ M5M4V1 6S20DTP-7,-8A,-8,-1 0 (2-BANK x 2097152-W ORD x 4-BIT) P relim inary M 5 M 4 V 1 6 S 3 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2-BANK x 1048576-WORD x 8-BIT) M IT S U B IS H I L S Is M 5 M 4 V 1 6 S 4 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2 - b a n k x 5 2 4 2 8 8 - w o r d x 16 -b it)
|
OCR Scan
|
PDF
|
6S20DTP-7
097152-W
1048576-WORD
M5M4V16S20DTP
152-word
M5M4V16S30DTP
576-word
M5M4V16S40DTP
288-word
16-bit.
M5M4V16S40
M5M4V16s30
|
Untitled
Abstract: No abstract text available
Text: Preliminary Speo. M it s u b is h i lsis Some contents are subject to change w ithout notice. MH2S64DKD -7,-8A,-8,-10 _ 134217728-BIT 2097152-WORD BY 64-Bm SvnchronousDR AM DESCRIPTION The MH2S64DKD is 2097152-word by 64-bit
|
OCR Scan
|
PDF
|
MH2S64DKD
134217728-BIT
2097152-WORD
64-Bm
64-bit
MIT-DS-0173-0
|
AD-009
Abstract: ta1282
Text: MITSUBISHI LSIs Preliminary I Some contents are subject to change w ithout notice. MH2S72DMD-7,-8A,-8,-10 150994944-BIT 2097152-WORD BY 72-BIT SynchronousDRAM DESCRIPTION The MH2S72DLD is 2097152-word by 72-bit Synchronous DRAM module. This consists of nine
|
OCR Scan
|
PDF
|
MH2S72DMD-7
150994944-BIT
2097152-WORD
72-BIT
MH2S72DLD
100MHz
125MHz
AD-009
ta1282
|
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH32S72AFA -8A,-8,-10 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH32S72AFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist
|
OCR Scan
|
PDF
|
MH32S72AFA
104-BIT
432-WORD
72-BIT
MIT-DS-0148-0
|
8A550
Abstract: No abstract text available
Text: MITSUBISHI LSIs Some contents are subject to change without notice. MH4S72AAPG -8A,-8,-10 301989888-BIT 4194304 - WORD BY 72-BIT SynchronousDRAM DESCRIPTION The MH4S72AAPG is 4194304 - word by 72-bit Synchronous DRAM module. This consists of five industry standard 4Mx16 Synchronous DRAMs in
|
OCR Scan
|
PDF
|
MH4S72AAPG
301989888-BIT
72-BIT
4Mx16
85pin
94pin
10pin
125MHz
8A550
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs Some contents are subject to change without notice. MH4S64AAPG -8A,-8,-10 268435456-BIT 4194304 - WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH4S64AAPG is 4194304 - word by 64-bit Synchronous DRAM module. This consists of four industry standard 4Mx16 Synchronous DRAMs in
|
OCR Scan
|
PDF
|
MH4S64AAPG
268435456-BIT
64-BIT
4Mx16
125MHz
100MHz
|
Untitled
Abstract: No abstract text available
Text: 128M Synchronous D RA M SDRAM Rev. 0.60E Oct. '98 M2V28S20TP-7,-8Al-8,-10 M2V28S30TP-7,-8A,-8,-10 M2V28S40TP-7,-8A,-8,-10 Preliminary M ITSUBISHI LS Is PRELIM INARY (4-BANK X 8,388,608-WORD x 4-BIT) (4-BANK X 4,194,304-WORD x 8-BIT) (4-BANKx 2,097,152-WORD x 16-BIT)
|
OCR Scan
|
PDF
|
M2V28S20TP-7
M2V28S30TP-7
M2V28S40TP-7
608-WORD
304-WORD
152-WORD
16-BIT)
2V28S20TP
M2V28S30TP
|
8L-10L
Abstract: No abstract text available
Text: MITSUBISHI LSIs SDRAM Rev.1.3 Mar'98 M5M4V64S40ATP-8A,-8L,-8, -10L, -10 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM Some of contents are subject to change without notice. PIN CONFIGURATION (TOP VIEW) DESCRIPTION The M5M4V64S40ATP is a 4-bank x 1048576-word x 16-bit
|
OCR Scan
|
PDF
|
M5M4V64S40ATP-8A
1048576-WORD
16-BIT)
M5M4V64S40ATP
16-bit
125MHz,
51ndersea
8L-10L
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH4S72DFA -7,-8A,-8,-10 301,989,888-BIT 4,194,304-WORD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH4S72DFA is 4194304 - word x 72-bit Synchronous DRAM stacked structural module. This consist
|
OCR Scan
|
PDF
|
MH4S72DFA
888-BIT
304-WORD
72-BIT
72-bit
100MHz
125MHz
100MHzC
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH4S72DMD-7,-8A,-8,-10 301989888-BIT 4194304-WORD BY 72-BIT SynchronousDRAM DESCRIPTION The MH4S72DMD is 4194304-word by 72-bit Synchronous DRAM module. This consists of eighteen industry standard 2Mx8 Synchronous DRAMs in TSOP and one industory standard
|
OCR Scan
|
PDF
|
MH4S72DMD-7
301989888-BIT
4194304-WORD
72-BIT
MH4S72DMD
72-bit
100MHz
125MHz
|
Untitled
Abstract: No abstract text available
Text: 2Q H RHRP870, RHRP880, RHRP890, RHRP8100 A R R IS S E M I C O N D U C T O R 8A, 700V - 1000V Hyperfast Diodes April 1995 Package Features • Hyperfast with Soft Recovery. <60ns JEDEC T0220AC • Operating Temperature. +175°C
|
OCR Scan
|
PDF
|
RHRP870,
RHRP880,
RHRP890,
RHRP8100
T0220AC
RHRP890
TA49060)
|
9912E
Abstract: No abstract text available
Text: MITSUBISHI LSIs Some contents are subject to change without notice. MH4S64DMD-7,-8A,-8,-10 268435456-BIT 4194304-WQRD BY 64-BIT SynchronousDRAM DESCRIPTION The MH4S64DMD is 4194304-word by 64-bit Synchronous DRAM module. This consists of sixteen industry standard 2Mx8 Synchronous DRAMs in
|
OCR Scan
|
PDF
|
MH4S64DMD-7
268435456-BIT
4194304-WQRD
64-BIT
MH4S64DMD
4194304-word
100MHz
125MHz
9912E
|
Untitled
Abstract: No abstract text available
Text: Preliminary Speo. MITSUBISHI LSIs Some contents are subject to change w ithout notice. MH4S72AAPG -8A,-8,-10 301989888-BIT 4194304 - WORD BY 72-BIT SynchronousDRAM DESCRIPTION The MH4S72AAPG is 4194304 - word by 72-bit Synchronous DRAM module. This consists of five
|
OCR Scan
|
PDF
|
MH4S72AAPG
301989888-BIT
72-BIT
72-bit
125MHz
100MHz
|