BA 09 H Search Results

Contextual Info: Drop-In Circulator 0.06 to 18GHz The content of this specification may change without notification 11/01/09 Drop- In Drop- In Circulator 0. 06 to 18GHz Fr eq. Ba nd Ins e rtion Ran ge Width Los s Is olation G Hz (MHz) (dB) (d B) max m in JX WBH X-D-6 0-1 2 0-2 0 -3 0

1t17

Contextual Info: Wideband Circulator 0.61 to 18GHz The content of this specification may change without notification 11/01/09 Coaxial Wideband Circulator 0.61 to 18GHz Fre q. Ba nd Ins e rtion Is ola tion Ra nge Wi Los s GHz (MHz ) (dB) (dB) m ax mi n V SWR For wa rd Re ve rse

1300313

Abstract: JE 13003
Contextual Info: b7 {DISCRETE/OPTO} 9 09 725 0 T OS HI BA D eT| TOTVHSG 000^355 5 | ~ D IS C R E T E / O P T O 6 7c 09355 ; D " Silicon EpitaxiaL P la n a r Ty pe 1SV100 Variable Capacitance Diode AM RADIO BAND TUNING APPLICATIONS. Unit in mm 4 .2 MAX. FEATURES: . High Capacitance Ratio : C]_v/c9V= 17(Min.)

Contextual Info: 2 ISO VIEW DA T E REV. E CN A P P ' D BY 3-3-09 B2 8677 TS 7-10-09 B3 8779 TRM NOTES: 1 . PLUG K I T C O N S I S T S OF: P R E - 1 N S E R T E D P L U G BODY W I T H S H I E L D L O A D BA R 2. MATERIALS: P L U G B O D Y : C L E A R P O L Y C A R B O N A T E , UL 9 4 - V O

BE-2RQ1-A4

Abstract: 1HP-125VAC 6201A
Contextual Info: CATALOG LISTING MICRO SWITCH FREEPORT I LLI NOI S. U S A A DI VI S I ON OF B E - 2RQ1- A 4 SW ITCH -BA SIC HONEYWELL F E D . M FG. C O D E 91#2B HA RD EN ED STEEL PLUNGER - 1 5 / 3 2 - 3 2 UNS THREAD TO W ITHIN .094 OF SHOULDER < i — LOCKNUT .62 A C R O SS F L A T S X .09 T H IC K 2 / 2 \

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9 09 72 50 TO SHI BA Sb DI SCR ETE/OPTO DE | ^ C H 7 2 S 0 S'ÓC U7553 2SC2553 SIL IC O N NPN T R IP L E D IF F U S E D TYPE INDUSTRIAL S W IT C H IN G S W IT C H IN G R E G U L A T O R AND H IG H VO LT A G E A P P L IC A T IO N S .

Contextual Info: 2 DA T E REV. E CN A P P ' D BY 4-25-06 B4 7598 TRM 7-10-09 B5 8779 TRM NOTES: I . PLUG K I T C O N S I S T S OF: P R E - 1 N S E R T E D P L UG BODY W I T H S H I E L D L O A D BA R G R OMM E T 36 2. MATERIALS: P L U G B O D Y : C L E A R P O L Y C A R B O N A T E , UL 9 4 -V 0

Contextual Info: 2 DA T E REV. E CN A P P ' D BY 1-6-06 B1 7426 TRM 7-10-09 B2 8779 TRM ISO VIEW NOTES: I . PLUG K I T C O N S I S T S OF: P R E - 1 N S E R T E D P L UG BODY W I T H S H I E L D L O A D BA R .35 2. MATERIALS: P L U G B O D Y : C L E A R P O L Y C A R B O N A T E , UL 9 4 - VO

IS42S16160

Abstract: 42S16160
Contextual Info: IS42S16160 16Meg x16 256-MBIT SYNCHRONOUS DRAM SEPTEMBER 2009 FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and

Contextual Info: IS42S83200B IS42S16160B ISSI 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM PRELIMINARY INFORMATION SEPTEMBER 2005 • Clock frequency: 166, 143 MHz OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed • Fully synchronous; all signals referenced to a

Contextual Info: ISSI IS45S32400B 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 143, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge PRELIMINARY INFORMATION SEPTEMBER 2005

Contextual Info: IS42S32800D IS45S32800D 8M x 32 256Mb SYNCHRONOUS DRAM DECEMBER 2009 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed

IS42S32400L-10BI

Contextual Info: IS42S16800L IS42S32400L ISSI 8Meg x16 & 4Meg x 32 128-MBIT PowerSaver SYNC DYNAMIC RAM FEATURES • Clock frequency: 143, 100, MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply

IS42S32800D

Abstract: is42s32800d-75ebl
Contextual Info: IS42S32800D IS45S32800D 8M x 32 256Mb SYNCHRONOUS DRAM APRIL 2009 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed

IS42S32400E-6TL

Abstract: IS42S32400E IS42S32400E-7T IS42S32400E-7TL IS45S32400E-7TLA1
Contextual Info: IS42S32400E IS45S32400E 4M x 32 128Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION JANUARY 2009 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge

IS45S32400B

Abstract: 45S32400B 1MX32X4 6ba1
Contextual Info: IS45S32400B 4Meg x 32 128-MBIT SYNCHRONOUS DRAM NOVEMBER 2009 FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed

IS42S32400D

Abstract: 42S32400D is42s32400d-6bli IS42S32400D-7TLI
Contextual Info: IS42S32400D 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge MARCH 2009 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed

IS42S32800D

Abstract: IS42S32800D-7BLI IS45S32800D IS42S32800D-7TL IS42S32800D-7TLI IS42S32800D-6TLI IS42S32800D7BLI IS42S32800D-7B is42s32800d-75ebl IS42S32800D-6BLI
Contextual Info: IS42S32800D IS45S32800D 8M x 32 256Mb SYNCHRONOUS DRAM DECEMBER 2009 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed

IS42S32400B

Abstract: 42S32400B IS42S32400B-6BLI IS42S32400B-7TLI
Contextual Info: IS42S32400B 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge PRELIMINARY INFORMATION MARCH 2009

Contextual Info: IS42S16160 16Meg x16 256-MBIT SYNCHRONOUS DRAM MAY 2008 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply IS42S16160 OVERVIEW

IS42S16160D

Abstract: IS42S16160D-7TLI
Contextual Info: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed

IS42S32160B

Abstract: IS42S32160B-6TL is42s32160 IS42S32160B-75EBLI
Contextual Info: IS42S32160B IS45S32160B 16M x 32 512Mb SYNCHRONOUS DRAM DECEMBER 2009 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed

IS42S81600

Abstract: IS42S16800-7TL
Contextual Info: IS42S81600 IS42S16800 16M x 8, 8M x16 MARCH 2009 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and

is42s16320

Abstract: IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130
Contextual Info: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed