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    B9D TRANSISTOR Search Results

    B9D TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    B9D TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    B9D TRANSISTOR

    Abstract: PNP Transistor b9d transistor B9C B9C transistor PNP Epitaxial Silicon Transistor sot-23 S8550LT1 hfe pnp transistor 500ma 40v pnp sot23/B9C transistor
    Text: S8550LT1 PNP EPITAXIAL SILICON TRANSISTORS HIGH VOLTAGE TRANSISTOR: PNP SOT— —23 FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mW（Tamb=25℃） Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V 1. BASE 2. EMITTER 3. COLLECTOR


    Original     		S8550LT1 OT--23 225mWTamb 150mA 500mA 500mA, B9D TRANSISTOR PNP Transistor b9d transistor B9C B9C transistor PNP Epitaxial Silicon Transistor sot-23 S8550LT1 hfe pnp transistor 500ma 40v pnp sot23/B9C transistor PDF

    B9D TRANSISTOR

    Abstract: PNP Transistor b9d SOT-23 marking B9D transistor B9C marking b9d sot-23 Marking B9C MARKING B9E HMBT8550 MARKING B9C HMBT8050
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2002.10.25 Page No. : 1/3 HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. Features SOT-23 • High DC Current: hFE=150-400 at IC=150mA


    Original     		HE6813 HMBT8550 HMBT8550 OT-23 150mA HMBT8050 B9D TRANSISTOR PNP Transistor b9d SOT-23 marking B9D transistor B9C marking b9d sot-23 Marking B9C MARKING B9E MARKING B9C HMBT8050 PDF

    B9D TRANSISTOR

    Abstract: PNP Transistor b9d SOT-23 marking B9D transistor B9C HMBT8050 HMBT8550 B9C MARK B9C transistor sot-23 Marking B9C
    Text: HI-SINCERITY Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2004.08.17 Page No. : 1/4 MICROELECTRONICS CORP. HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current: hFE=150-400 at IC=150mA


    Original     		HE6813 HMBT8550 HMBT8550 OT-23 150mA HMBT8050 183oC 217oC 260oC B9D TRANSISTOR PNP Transistor b9d SOT-23 marking B9D transistor B9C HMBT8050 B9C MARK B9C transistor sot-23 Marking B9C PDF

    10W class a audio power amplifier

    Abstract: No abstract text available
    Text: / = 7 SGS-THOMSON ^ 7 # . K Æ D M tEüi »*© TDA7298 28W Hi-Fi AUDIO POWER AMPLIFIER WITH MUTE /STAND-BY PRODUCT PREVIEW . SUPPLY VOLTAGE RANGE UP TO ±22V • SPLIT SUPPLY OPERATION ■ HIGH OUTPUT POWER UP TO 28W MUSIC POWER ■ LOW DISTORTION . MUTE/STAND-BY FUNCTION


    OCR Scan     		TDA7298 TDA7298 10W class a audio power amplifier PDF

    B9D TRANSISTOR

    Abstract: 4009UB 4010B 4009U
    Text: r z 7 s g s -th o m s o n ^7# h c c /h c f 4 o o 9 u b HCC/HCF4010B HEX BUFFER/CONVERTERS 4009U B -IN V ER TIN G TYPE 4O IOB-NON INVERTING TYPE • ■ ■ ■ . ■ . . ■ CMOS TO DTL7TTL HEX CONVERTER HIGH-TO-LOW LEVEL LOGIC CONVERSION M ULTIPLEXER: 1-TO-6 OR 6-TO-1


    OCR Scan     		HCC/HCF4010B 4009U 100nA HCC/HCF4009UB GC33330 GC33350 B9D TRANSISTOR 4009UB 4010B PDF

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159 PDF

    Untitled

    Abstract: No abstract text available
    Text: 123455667 DC-Motor Controller 89ABCD9E7 CPU o o MelexCM CPU Dual RISC CPU – 5MIPS o LIN protocol controller o 16-bit application CPU90 Internal RC-Oscillator Memories o o 2kbyte RAM, 30kbyte Flash, 128 byte EEPROM Flash for series production Periphery


    Original     		89ABCD9E7 16-bit CPU90 30kbyte 100-kBaud 100Hz 100kHz 16-channel 10-bit PDF

    TCA160

    Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
    Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;


    OCR Scan     		AC187 BC157 BC158 BC159 BC186 BC187 BD201 BD202 BD203 BD204 TCA160 BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300 PDF