Untitled
Abstract: No abstract text available
Text: DIODES INC 35E D Bi SfiMÖTTB DQQQ3S4 H • DII BRIDGE RECTIFIERS STORAGE/OPERATING TEMPERATURE RANGE -55°C to +150°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum Forward Peak Surge Current @ 8.3ms
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B1005
MB101
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DIODE B82
Abstract: MDT 1200 DD50GB60L DD50GB-L B82 diode SANSHA DD50GB40L DD50GB40M DD50GB60M 106c
Text: S ANSHA ELECTRIC HFG ÇQ 5bE D 7TÌ1SM3 0QQQMb5 5 7 3 M S E C U DD50GB-L M T '2 3 - O J DD50GB-L, M are high power switching device which has two serial connected high speed diodes. • High Speed L /M type tr r 0 .7 /0 .8 /z s 93.S MAX -S>- !
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DD50GB-L,
DD50GB40L
DD50GB40M
DD50GB60L
DD50GB60M
DIODE B82
MDT 1200
DD50GB-L
B82 diode
SANSHA
DD50GB60M
106c
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smd JSs
Abstract: smd JSs diode
Text: SK50GB065 B- I JK L$M 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$OG BP I JK L$ C$ BP I TJK L$ C$XY IGBT Module SK50GB065 *'-) RSS N KU V B- I WS L$ US V RS V Z JS N BP I TJK L$ TS _- B- I JK L$ RU V B- I WS L$ UW V C$XYI J : C$0%&
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SK50GB065
smd JSs
smd JSs diode
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DIODE B82
Abstract: No abstract text available
Text: SK50GAL065 B- I JK L$M 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$OG BP I JK L$ C$ BP I TJK L$ C$XY RSS N KU V B- I WS L$ US V RS V Z JS N BP I TJK L$ TS _- B- I JK L$ Ka V B- I WS L$ [W V TSS V BP I TKS L$ UUS V B- I JK L$
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SK50GAL065
SK50GAR065
DIODE B82
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ZENER B18
Abstract: b18 zener
Text: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “ Characteristics ” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
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BZX55B
ZENER B18
b18 zener
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BZX55
Abstract: BZX55-B15 zener b27 bzx b27 bzx55 024 BZX55B equivalent ZENER B18 zener B51 BZX b18 bzx b22
Text: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “Characteristics” Power Dissipation C C 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
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BZX55B
BZX55
BZX55-B15
zener b27
bzx b27
bzx55 024
BZX55B equivalent
ZENER B18
zener B51
BZX b18
bzx b22
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bzx55 024
Abstract: zener b27 ZENER B18 b16 zener BZX55 bzx b27 b2v4 b5v6 diode zener B16 BZX55B
Text: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “Characteristics” Power Dissipation C C 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
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BZX55B
bzx55 024
zener b27
ZENER B18
b16 zener
BZX55
bzx b27
b2v4
b5v6
diode zener B16
BZX55B
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BZX55
Abstract: BZX55-B82 ZENER B18 zener b27 BZX 3,3 B2V7 BZX55-B15 BZX55B Zener B12 b2v4
Text: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “ Characteristics ” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
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BZX55B
BZX55
BZX55-B82
ZENER B18
zener b27
BZX 3,3
B2V7
BZX55-B15
BZX55B
Zener B12
b2v4
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BZX55
Abstract: zener b27 b16 zener b2v4 B20 zener diode glass BZX55B zener BZX 180 b9v1 B2V7
Text: BZX55B min. 27.5 SILICON PLANAR ZENER DIODES max. 2.9 White Cathode Band Part No. Black Color 1.9 min. 27.5 max. max. 0.5 Glass case JEDEC DO-34 Dimensions in mm Absolute Maximum Ratings Ta = 25 oC Parameter Symbol Power Dissipation Ptot Value Unit 1) mW
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BZX55B
DO-34
BZX55
zener b27
b16 zener
b2v4
B20 zener diode glass
BZX55B
zener BZX 180
b9v1
B2V7
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diode B61
Abstract: b84 diode SO56-2 diode b81 diode b84 b71 DIODE b81 diode B7414 DIODE B82 diode b83
Text: FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • The FCT162344AT/CT/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This highspeed, low power device provides the ability to fanout to
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IDT54/74FCT162344AT/CT/ET
FCT162344AT/CT/ET
MIL-STD-883,
SO56-1)
SO56-2)
SO56-3)
E56-1)
162344AT
diode B61
b84 diode
SO56-2
diode b81
diode b84
b71 DIODE
b81 diode
B7414
DIODE B82
diode b83
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D bfc.53131 002 ^ 3 4 T37 APX Philips Components 1 N 5 8 1 7 /1 N 5 8 1 8 /1 N 5 8 1 9 D a ta s h e e t s ta tu s Preliminary specification d a te o f is s u e F e b ru a ry 1 99 0 Schottky barrier diodes DESCRIPTION Schottky barrier diodes in hermetic
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1N5817
100K/W.
1N5817/1N5818/1N5819
1N5819
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diode b81
Abstract: diode B61 diode b84 DIODE B82 b84 diode DIODE B34 diode b73 SO56-2
Text: FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • The FCT162344AT/CT/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This highspeed, low power device provides the ability to fanout to
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IDT54/74FCT162344AT/CT/ET
FCT162344AT/CT/ET
MIL-STD-883,
SO56-1)
SO56-2)
SO56-3)
E56-1)
162344AT
diode b81
diode B61
diode b84
DIODE B82
b84 diode
DIODE B34
diode b73
SO56-2
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DIODE B82
Abstract: DIODE B34 DIODE B44 B14 DIODE b34 diode SO56-2 diode b83 B82 diode diode b81
Text: FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • The FCT162344AT/CT/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This highspeed, low power device provides the ability to fanout to
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IDT54/74FCT162344AT/CT/ET
FCT162344AT/CT/ET
MIL-STD-883,
SO56-1)
SO56-2)
E56-1)
162344AT
162344CT
DIODE B82
DIODE B34
DIODE B44
B14 DIODE
b34 diode
SO56-2
diode b83
B82 diode
diode b81
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Untitled
Abstract: No abstract text available
Text: CMZB68~CMZB390 TOSHIBA Zener Diode Silicon Junction CMZB68~CMZB390 Communication, Control and Measurement Equipment Constant Voltage Regulation • Zener voltage: VZ = 68 to 390 V • Suitable for high-density board assembly due to the use of a small surface-mount package, M−FLATTM
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CMZB68
CMZB390
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ON B34
Abstract: DIODE B82 DIODE B34 diode b84 max 3249 DIODE B44 74FCT163344 b84 diode DATASHEET B34 DIODE B23
Text: 3.3V CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT163344/A/C ADVANCE INFORMATION Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • Typical tSK o (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)
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IDT54/74FCT163344/A/C
250ps
MIL-STD-883,
200pF,
SO56-1)
SO56-2)
E56-1)
ON B34
DIODE B82
DIODE B34
diode b84
max 3249
DIODE B44
74FCT163344
b84 diode
DATASHEET B34
DIODE B23
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Untitled
Abstract: No abstract text available
Text: CMZB68~CMZB390 TOSHIBA Zener Diode Silicon Junction CMZB68~CMZB390 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation 0.65 ± 0.2 Unit: mm • Zener voltage: VZ = 68 to 390 V • Suitable for high-density board assembly due to the use of a small
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CMZB68
CMZB390
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DIODE MARKING B82
Abstract: CMZB100 CMZB330 CMZB75
Text: CMZB68~CMZB390 TOSHIBA Zener Diode Silicon Junction CMZB68~CMZB390 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation 0.65 ± 0.2 Unit: mm • Zener voltage: VZ = 68 to 390 V • Suitable for high-density board assembly due to the use of a small
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CMZB68
CMZB390
DIODE MARKING B82
CMZB100
CMZB330
CMZB75
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Untitled
Abstract: No abstract text available
Text: SKM 800GA176D .0 2 RE Q8? * 5 + %41(/:-+( +;(0-=-(D Absolute Maximum Ratings Symbol Conditions IGBT 789, .S 2 RE Q8 B8 .S 2 PEH Q8 B8XY Trench IGBT Modules SKM 800GA176D 4;+0 PFHH 7 UVH C .0 2 UH Q8 EWH C PRHH C [ RH 7 PH ^+ .0 2 RE Q8 @VH C .0 2 UH Q8 ``H
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800GA176D
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SV-03 diode
Abstract: diode sv 03
Text: SKM 200GB176D .0 2 ME N8? * 5 + %41(/:-+( +;(0-=-(D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 ME N8 B8 .O 2 QEH N8 QFHH 7 M@H C .0 2 RH N8 QRH C UHH C W MH 7 QH [+ .0 2 ME N8 MQH C .0 2 RH N8 Q]H C UHH C .O 2 QEH N8 QQHH C .03+( 2 ME N8 MQH
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200GB176D
SV-03 diode
diode sv 03
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Untitled
Abstract: No abstract text available
Text: SKM 400GB126D . .0 2 GH I8? * 5 + %41(/:-+( +;(0-=-(D Absolute Maximum Ratings Symbol Conditions IGBT 789, .J 2 GH I8 B8 .J 2 LHM I8 LGMM 7 NOM C .03+( 2 PM I8 QQM C @MM C U GM 7 LM Y+ .03+( 2 GH I8 NMM C .03+( 2 PM I8 GOM C @MM C .J 2 LHM I8 GGMM C .03+( 2 GH I8
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400GB126D
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2N3904 A30
Abstract: 2N3904 A52 2N3904 a27 2N3904 B28 Mec R68 2N3904 A41 intel c206 MCH 2N3904 a26 intel c202 MCH 2N3904 B21
Text: R Intel 840 Chipset Platform Memory Expansion Card MEC Design Guide July 2000 Document Number: 298239-001 ® Intel 840 Chipset Platform MEC R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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diode u2 a54
Abstract: b34 DIODE schottky b37 diode 6CE3300KX B48 SOD diode b27 SOD-123 a34 WSL20105L000FEA b74 DIODE schottky SOD-123 B34
Text: 19-1009; Rev 0; 10/07 MAX5960L Evaluation Kit/ Evaluation System The MAX5960L evaluation kit EV kit is a fully assembled and tested surface-mount quad hot-plug controller printed-circuit board (PCB) with four PCI Express hotplug slots. The circuit uses a MAX5960L IC in an 80-pin
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MAX5960L
80-pin
MAX5960L
MAX5959A/MAX5959L/MAX5960A/MAX5960L
diode u2 a54
b34 DIODE schottky
b37 diode
6CE3300KX
B48 SOD
diode b27
SOD-123 a34
WSL20105L000FEA
b74 DIODE schottky
SOD-123 B34
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DIODE B74
Abstract: DIODE ON SEMICONDUCTOR B34 56-PIN diode b73 diode B61 OEX 15 diode
Text: PI74FCT162344T Address/Clock Driver PI74FCT162344T
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PI74FCT162344T
PI74FCT
tSK21
PS2047B
DIODE B74
DIODE ON SEMICONDUCTOR B34
56-PIN
diode b73
diode B61
OEX 15 diode
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IDT74LVC16344A
Abstract: LVC16344A
Text: IDT74LVC16344A 3.3V CMOS ONE-TO-FOUR ADDRESS/CLOCK DRIVER INDUSTRIAL TEMPERATURE RANGE 3.3V CMOS ONE-TO-FOUR ADDRESS/CLOCK DRIVER WITH 3-STATE OUTPUTS AND 5 VOLT TOLERANT I/O IDT74LVC16344A DESCRIPTION: FEATURES: The LVC16344A is a 1:4 address/clock driver built using advanced dual
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IDT74LVC16344A
LVC16344A
IDT74LVC16344A
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