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    a10u

    Abstract: B724e
    Text: O K I Semiconductor MSM514101B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.


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    PDF MSM514101B/BL 304-Word MSM514101B/BL 1024cycles/16ms, 128ms a10u B724e

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components OCM 1X0, 1X1 SERIES Unidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM1XO and OCM1X1 Series are unidirectional DC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS


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    PDF 10-mA Pfl140/1 b7E4240 b7242L

    MSM5117800

    Abstract: TSOP28-P-400
    Text: O K I Semiconductor MSM5 1 17800 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117800 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 8-bit configuration. The technology used to fabricate the MSM5117800 is OKI's CMOS silicon gate process technology.


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    PDF MSM5117800 152-Word MSM5117800 cycles/32ms A0-A10 b724240 TSOP28-P-400

    msc23136c

    Abstract: DS1060 MSC23136
    Text: O K I Semiconductor MSC2 3 1 3 6 C/CL-XXBS1 0 /P S 10 1,048,576-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23136C/CL-xxBS10/DS10 is a fully decoded 1,048,576-w ord x 36-bit CMOS Dynamic Random Access M emory M odule com posed of eight 4-Mb DRAMs 1M x 4 in SOJ


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    PDF MSC23136C/CL-XXBS10/DS10 576-Word 36-Bit MSC23136C/CL-xxBS10/DS10 72-pin MSC23136C/CL-xxBS10: msc23136c DS1060 MSC23136

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM514900/SL 524,288-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE GENERAL DESCRIPTION The M SM 514900/SL is a new generation dynamic RAM organized as 524,288 words by 9 bits. The technology used to fabricate the MSM514900/SL is OKI's CMOS silicon gate process


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    PDF MSM514900/SL 288-Word 514900/SL MSM514900/SL cycles/16ms, 1024cycles/128ms L72MEMD Q015flbb

    514100A

    Abstract: 20-PIN 26-PIN ZIP20-P-400-W1 AOA10
    Text: O K I Semiconductor MSM5 1 41OOA/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100A/AL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100A/AL is OKI's CMOS silicon gate process technology.


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    PDF MSM514100 304-Word MSM514100A/AL 1024cycles/16ms, 1024cycles/128ms A0-A10 514100A 20-PIN 26-PIN ZIP20-P-400-W1 AOA10