IP173
Abstract: kuka 3 phase bridge fully controlled rectifier diode 1600 rectifier B6HK EUPEC tt 105 N 16 100N B6U 205 3 phase bridge rectifier B6u 08
Text: kuka-2003-inhalt.qxd 17.04.2003 IGBT 10:34 Uhr Seite 20 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 20 IsoPACK Bridge Rectifier Type 3 phase bridge rectifier, uncontrolled DD B6U 85 N 1 DD B6U 145 N 1) DD B6U 205 N 1) DD B6U 215 N 2)
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kuka-2003-inhalt
IP173
kuka
3 phase bridge fully controlled rectifier
diode 1600 rectifier
B6HK
EUPEC tt 105 N 16
100N
B6U 205
3 phase bridge rectifier
B6u 08
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B6U 145 n
Abstract: B6U 145 B6U145N B6U 220
Text: Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 145 N 12.18 ISOPACK N B6 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung VRRM
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45l/s)
90l/s)
B6U 145 n
B6U 145
B6U145N
B6U 220
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KM-17
Abstract: heatsink KM 60 B6U 145
Text: Technische Information / Technical Information Netz-Dioden-Modul Rectifier Diode Module DD B6U 145 N 12.18 ISOPACK N B6 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung VRRM
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45l/s)
90l/s)
KM-17
heatsink KM 60
B6U 145
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B43875
Abstract: 20/j1nac3 semikron SKS SKHI 20 SKHI 20 opa semikron SKD 75 gal CAPACITOR B43875 j1nac3 B6CI 16 V12 LA 125
Text: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMIX Stack 1 Three-phase inverter SKS 100F B6U+B6CI+E1CIF 80 V12 SEMiX 352 GB 128 SEMiX 302 GAL 126 SKD 145/16 P122 / 550 Vcemax fswmax fSWmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb
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10min
B43875
A9478
20/j1nac3
semikron SKS
SKHI 20
SKHI 20 opa
semikron SKD 75 gal
CAPACITOR B43875
j1nac3
B6CI 16 V12
LA 125
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B6U145N
Abstract: B6HK TDB6HK135N B6HK135N B6U 205 100N B6U215N TDB6HK165N rectifier bridge 9 v TT 80 N 1200
Text: Click on outline no. IsoPACK Bridge Rectifier & AC-Switches VDRM, VRRM Type V VDSM = VDRM VRSM = VRRM+100V IFRMSM IFSM Id/Tc ITRMSM (ITSM) A/°C A A 10 ms, Tvj max IRMS/TC V(TO) rT RthJC Tvj max V Tvj=Tvj max mΩ °C Tvj=Tvj max °C/W per arm outline A/°C
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B6U215N
B6U145N
B6HK
TDB6HK135N
B6HK135N
B6U 205
100N
TDB6HK165N
rectifier bridge 9 v
TT 80 N 1200
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b6u100
Abstract: B6U SKS b6u 500 semikron semikron SKS
Text: SKS 160F B6U 100 V16 Characteristics Symbol Conditions min. typ. max. Unit 161 A 119 179 A 106 212 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Diode Three phase uncontrolled
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Px120/120F
b6u100
B6U SKS
b6u 500 semikron
semikron SKS
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD B6U 144 N 10.16.R ECONO 80 104,8 80 70,4 60,96 15,24 N- 5,5 P+ R NS P+ T 3,81 11,43 57,15 93±0,2 max. 107,5 P+ 13 R 1-4 S 5-8 T 9-12 P+ 16 N- 14 N- 17 VWK Sep. 1996
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D-59581
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Untitled
Abstract: No abstract text available
Text: Fast Asymmetric Thyristors T ype V drm V rrm Itrsm Itsm l i 2dt Itavm^ c V V A kA A2s 10ms 10ms tvj max tvj max *103 A /°C 180° el sin V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) 400 2,5 30 V(TO) rT (d i/d t)cr V m i2 A / jjs tvj = tvi = DIN I EC
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0D021A4
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD B6U 144 N 10.16.R ECONO 80 104,8 80 70,4 60,96 15,24 N- 5,5 P+ R NS P+ T 3,81 11,43 57,15 93±0,2 max. 107,5 P+ 13 R 1-4 S 5-8 T 9-12 P+ 16 N- 14 N- 17 VWK Sep. 1996
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B2HKF
Abstract: b2hkf70n CS 13001 IC 7476 DDB6U110N AD60F DD86 ac switches isoPACK B6U60 TDB6HK165N
Text: Fast Asymmetric Thyristors Type V V drm V V dsm = rrm V V drm V It r s m A rrm C tq = 1 p S It s m i i 2dt kA A2s 10ms 10ms tyj max tyj max It a v m ^ c V (TO ) rT V m ii (di/dt)cr tq 1 ) (dv/dt)cr V gt Igt A/ps MS V/|JS DIN IEC 747-6 V mA tvj = 1 8 0 °
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skiip 613 gb
Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Text: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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transistor b2u
Abstract: No abstract text available
Text: Section 12: SEMISTACK Power Semiconductor Assemblies with Diodes, Thyristors, SEMIPACK Modules or SEMIPONT Bridge Rectifiers as well as SEMITRANSIGBT, MOSFET and Darlington Transistor Modules from 10 to 1000’s of Amps; 12 Voc to over 1000 Vrms mains using
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semiconductor
Abstract: hirect H507CH Hirect diode H400TB
Text: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5
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UPC 494 Application Note
Abstract: DC-20 TGF2022-48 lg 7607 36078
Text: Advance Product Information September 19, 2005 DC - 20 GHz Discrete power pHEMT TGF2022-48 Key Features and Performance • • • • • • • • Product Description Frequency Range: DC - 20 GHz > 37 dBm Nominal Psat 58% Maximum PAE 45 dBm Nominal OIP3
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TGF2022-48
360-600mA
360mA
1200mA)
TGF2022-48
DC-20
0007-inch
UPC 494 Application Note
lg 7607
36078
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