B42 TRANSISTOR Search Results

ad654 spice

Abstract: DARLINGTON TRANSISTOR ARRAY AD75019
Contextual Info: ANALOG DEVICES INC 51E D • OfllbflQQ 0 0 3 7 3 T M b42 ■ ANA - H7.-e>\ i r ■ MIXED SIGNAL M U M ' >Jlil\Ul' J.;! r l □ Q ANALOG DEVICES * ANALOG DEVICES INC 51E D ■ OfllbBOD 0 0 3 7 3 ^ 5 Table of Contents 1 Summary 2 ASIC Processes 5 LC2MOS Cell Library

transistor t07

Abstract: NEX2303 NE 2301 02cj NEX2300 NEX2301 NEX230187 NEX2302 NEX230265 NEX230365
Contextual Info: NEC/ CALIFORNIA NEC b42?m4 0001202 S 1SE D .7 -3 3 r < 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H PO W ER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad­ vanced Stepped Electrode Transistor SET structure with

NEX2301

Abstract: NEX2303 NEX2300 NEX230187 NEX2302 NEX230265 NEX230365
Contextual Info: N E C / CALIFORNIA NEC 1SE b42?m4 D 0001202 S .7 -3 3 r< 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIG H POWER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad­ vanced Stepped Electrode Transistor SET structure with

nec v70

Abstract: NEC V60 NEC V20 hardware nec v30 PD70632 nec v20 32-bit microprocessor pipeline architecture 4 BIT ALU IC IEEE754 8 BIT ALU design by cmos
Contextual Info: N E C ELECTRONICS INC 3QE D • b42?S25 002532b T ■ ¿/PD70632 V 70 3 2 -B it, High-lntegration CM OS M icroprocessor Z V liC . NEC Electronics Inc. Description Features The ixPD70632 (V70'") is the second implementation of NEC’s 32-bit V-Serles architecture. Like its predecessor,

1601a

Abstract: 1B01A SY 356 10PIN CXA1389AQ SBX1601A SBX1602A SMPTE 352 A2JG
Contextual Info: 0 3 0 2 3 0 3 0 0 0 5 5 2 2 b42 « S O N Y SONY Serial Interface/Transmission Encoder Description SBX1601A Package Outline Unit : mm The SBX1601A is a hybrid IC encoder that converts the parallel data into serial form for the purpose of interface or transmission of digital video or audio data.

sbx16

Contextual Info: 0 3 0 2 3 0 3 0 0 0 5 5 2 2 b42 « S O N Y SONY Serial Interface/Transmission Encoder Description SBX1601A Package Outline Unit : mm The SBX1601A is a hybrid IC encoder that converts the parallel data into serial form for the purpose of interface or transmission of digital video or audio data.

pa1437h

Contextual Info: N E C ELECTRONICS INC = & 6427525 N E C ELECTRONICS DEI b42?S2S 0011143 S INC 98D 19143 D T *Y3 z s /u P A I 4 3 7 H PNP SILICON EPITAXIAL! POWER T R A N S I S T O R . A R R A '* LOW S P E E D ' S W I T C H I N G D A R L I N G T O N ) DESCRIPTION , The ^PA1437H Is an array of four darlington power transistors. It is

IFN424

Abstract: IFN425 IFN426 transistor B42 electrometers
Contextual Info: Databook.fxp 1/14/99 12:22 PM Page B-42 B-42 01/99 IFN424, IFN425, IFN426 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Very High Impedance Differential Amplifiers ¥ Electrometers Device Dissapation Derate 3.2 mW/°C to 50°C

PACKAGE PANASONIC

Abstract: AN90B01S DIP018-P transistor B42 AN90B22 AN90B60
Contextual Info: General Purpose Linear ICs I Transistor Arrays >AN90B00/S Series V çe = 2 4 V , Iç =25m A (Note) Pin numbers in □ show those o f SO Package. Equivalent Circuits AN90B01S : 5 Circuits (SOP016-P-0225) è— -G aa Ä Ä AN90B10 : 8 Circuits (DIP018-P-0300E)

transistor B42

Abstract: smd transistor b44 b42 smd transistor B42 350 MARKING SMD PNP TRANSISTOR 2a B44 transistor marking b42 marking B44 b42 transistor B43 marking
Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB1475 Features Super miniature package. High DC current IC DC =500mA max. Low VCE(sat): VCE(sat)=-60mV at -100mA 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

AN90b21

Abstract: 90B108
Contextual Info: General Purpose Linear ICs 1 Transistor Arrays •A N 9 0 B 0 0 /S Sériés V c e = 24V, le = 25mA (Note) Pin num bers in □ show those of SO Package Equivalent C ircuits AN 90B 01S : 5 Circuits (SO - 16D) AN 90B 10 : 8 Circuits (18 — DIP) K D — A N 90B 20 : 8 C ircuits (18 -

2SC2338

Abstract: NE567 NE56787 NE56708 NE56700 S21E T-31-21 transistor 7350 IC CHIP 5270 IC NE567
Contextual Info: NEC/ CALIFORNIA 15E D bM27M14 0 0 0 14 05 b NE56700 NE56708 NE56787 NPN SILICON HIGH FREQUENCY TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES • HIGH GAIN BANDWIDTH PRODUCT PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 25 VCEO Collector to Emitter Voltage

DTC124EK

Abstract: DTC124EK equivalent b42 transistor
Contextual Info: DTC124EK NPN Digital Transistor -I 1 u I with built-in bias resistor. This allows inverter circuit con­ figuration without external resistors for input. 3 - 0 .1 5 - > The pin configuration is the following: rin 1 = Collector/OUT 1.3 18+0 2 bottom view

photo transistor application

Abstract: PH108 "Photo Interrupter" cd photo detector SE308 photo transistor high current photo interrupter PHOTO SENSOR of application
Contextual Info: N E C ELECTRONICS INC 3GE J> • b4a?52S OOETSTB T ■ PHOTO TRANSISTO R PH108 PHOTO TRA N SISTO R DESCRIPTION The PH 108 is a photo transistor in a plastic molded package, and very suitable for a detector of a photo interrupter with combination of the SE308.

30E Transistor

Abstract: PH107 b42 transistor photo transistor
Contextual Info: N E C ELEC TR ON IC S INC 30E D b457S25 0 G 2 tìS,ìl S • PHOTO TRANSISTOR PHI 07 D A R LIN G T O N PHOTO T R A N S IS T O R The PH 107 is a darlington photo transistor in a plastic molded package, P A C K A G E D IM E N S IO N S and very suitable for a detector of a photo interrupter.

Contextual Info: FMMT2907 FMMT2907A SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2907 - 2B FMMT2907A - 2F FMMT2907R - 4P FMMT2907AR - 5P ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

SE304

Abstract: PHOTO TRANSISTOR current to voltage PH103 T-41-63 transistor TAG 854
Contextual Info: N E C ELEC TR ON IC S INC 30E I • 1.427555 OOBISftl 2 ■ T -* ll-¿ 3 / PHOTO T R A N S IS T O R PH103 D A R L IN G T O N PH O TO T R A N S IS T O R The PH 103 is a darlington photo transistor in a plastic molded package, P A C K A G E D IM E N S IO N S

Contextual Info: 5 7 . SGS-1H0MS0N SD5000 ’ EL[ RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS PRELIM INARY DATA GOLD METALLIZATION EMITTER SITE BALLASTING INTERNAL INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC PACKAGE COMMON EMITTER CONFIGURATION P out = 1.5 W MIN. WITH 9.5 dB GAIN

2N2369A

Abstract: 2n2369a philips TU-T2
Contextual Info: N AMER PHILIPS/DISCRETE bTE bbSBTBl DDEÔDT? ?Db WM APX 11 2N2369A | i SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-18 metal envelope primarily intended for high-speed saturated switching and high frequency amplifier applications. QUICK REFERENCE DATA

BFR29

Abstract: mosfet vn 10
Contextual Info: 7110â2b DQb7b21 a?T • P H I N BFR29 N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope w ith the substrate connected to the case. It is intended fo r linear applications in the audio as well as the i.f. and v.h.f. frequency region, and in

Contextual Info: N AUER PHILIPS/DISCRETE bTE J> m bbSB'lBl DDEfiOT? ?Qb « A P X 2N2369A SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-18 metal envelope prim arily intended for high-speed saturated switching and high frequency am plifier applications. Q U IC K R E F E R E N C E D A T A

MRF317

Abstract: transistor MRF317
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed prim arily for w ideband large-signal output am plifier stages in 3 0 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W

RZB06050W

Abstract: transistor B42 Transistor 2TD 476 capacitor 100B102KP50X capacitor 476
Contextual Info: P h ilip s S e m icon d u ctors Prelim inary sp ecification NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal input prematching networks allow an easier design

transistor B42

Contextual Info: ^ -3 3 - 0 1 Philips Sem iconductors NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal Input prematching networks allow an easier design of circuits