B3B7B55 Search Results
B3B7B55 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCR12 SERIES* Advance Information •Motorola preferred devices Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 400 thru 800 VOLTS Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor |
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MCR12 T0-220AB b3b7B55 | |
MC68836
Abstract: resonant frequency equation crystal generator 1GHz MC12032A MC12032B MC145XXX MMBV105GL
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MC12032A MC145XXX MC12032B MC68836 resonant frequency equation crystal generator 1GHz MMBV105GL | |
b1545
Abstract: BR1545 BR1545CT MBR1535CT b1535 b1545 diode b1545 motorola BR1535C
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MBR1535CT/D MBR1535CT MBR1545CT 26SIONING -220A b3b7B55 b1545 BR1545 BR1545CT b1535 b1545 diode b1545 motorola BR1535C | |
Contextual Info: MOTOROLA Order this document by MJW21192/D SEMICONDUCTOR TECHNICAL DATA NPN MJW21192 Complementary Silicon Plastic Power Transistors PNP Specifically designed for power audio output, or high power drivers in audio amplifiers. • • • • DC Current Gain Specified up to 8.0 Amperes at Temperature |
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MJW21192/D MJW21192 O-247AE MJW21191 340K-03 O-247AE) | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02LT1 Motorola Preferred Device Low rDS on Sm all-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Part of the GreenLine Portfolio of devices with energyconserving traits. |
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MGSF1P02LT1 | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High V oltage Transistor PNP Silicon MMBT5401LT1 colle3ctor Motorola Preferred Device 2 EMITTER CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO -150 Vdc Collector-Base Voltage |
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MMBT5401LT1 1N914 b3b7255 |