B3B75SL Search Results

mcm511000

Abstract: MCM511000-85 511000 dram MCM511000-10 MCM511000P12
Contextual Info: MOTOROLA 6367251 SC {MEMORY/A S I O Tt, MOTOROLA S C MOTOROLA 96D MEMORY/ AS I C •i SEMICONDUCTOR « TECHNICAL DATA D e J b3b75Sl 0D774Sb 0 | 77426 D s r mi—— MCM511000 Advance Information 1 M x 1 C M O S Dynam ic RAM P PACKAGE PLASTIC C A S E 707A

6A17

Abstract: 3E-17 IC KA 2312
Contextual Info: M OTOROLA SC -CMEMORY/ASIC} öO DE^b3t.75Sl OOVSHTl 3 | T-46-23- 12 IT u C R r 1 2 1 2 8 ¿Jn 16K BIT STATIC RAM The MCM2128 is a 16,384-bit Static Random Access Memory organized as 2048 words by 8 bits, fabricated using Motorola's Highperformance silicon-gate MOS HMOS technology. It uses an in­

Contextual Info: b 'ìE T> I L,3b7251 ODÖTS'ifl flbl « M 0 T 3 MOTOROLA l ^ ' ’R 0 L A SC Order this document by MCM516160A/D Î1EM0RY/ASIC SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family F a s t P a g e M o d e , x 1 6 a n d x 1 8

4170B

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54170B MCM5L4170B MCM5V4170B Product Preview 256K x 16 CMOS Dynamic RAM Fast Page Mode - 1 CAS, 2 Write Enables The M C M 54170B is a 0 .6 |i C M OS high-speed dynam ic random a ccess m em ory. It is organized a s 2 62,144 sixteen-bit w ords and fabricated with C M OS silicon-gate process

Contextual Info: MOTOROLA SC M E M O R Y / A S I C MbE D m b3b?2Sl 0060613 T EIM0T3 Order this data sheet by MCM6206C/D MOTOROLA S E M IC O N D U C TO R C TECHNICAL DATA Advance Information M C M 6208C 32K x 8 Bit S tatic R A M Industrial Temperature Range: -4 0 to 85°C

M9409

Abstract: transistor 342 G motorola 2N5643
Contextual Info: MOTOROLA SC XST RS/ R F 4bE D L3 b 7 2 S4 OGIMÜTE 2 MOTOROLA . ' P - 3 3 " 11 • S E M IC O N D U C T O R TECHNICAL DATA 2N5643 The RF Line 40 W - 175 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR designed p rim a rily fo r w id e b a n d large-signal a m p lifie r stages in

Contextual Info: MOTOROLA SC M E M O R Y / A S I C MbED El b3b72Sl 0000013 IM0T3 T Order this data sheet by MCM6206C/D MOTOROLA m SEM ICO N D U CTO R ^ TECHNICAL DATA MCM6208C Advance Information 32K x 8 Bit Static RAM Industrial Temperature Range: -40 to 85°C The MCM6206C is a 262,144 bit static random access memory organized as

Contextual Info: MOTOROLA SC {tlEflO RY/ASI LSE D WÊ t . 3 b ? 2 S l MOTOROLA DSPRAM 8K x 24 Bit Fast Static RAM ELECTRICALLY TESTED PER: MPG56824A The 56824A is a 196,608 bit static random access m em ory organized as 8,192 words of 24 bits, fabricated using M otorola’s high perform ance silicon-gate CMOS

M5C4

Abstract: transistor m5c CMLA01 OAI211 OA211 A021H CMA019
Contextual Info: Order this Data Sheet by M5C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M5C SERIES Advanced Information M5C SERIES CMOS ARRAYS The M5C Series arrays feature performance optimized 3.3 V and mixed-voltage I/O capability, high-speed interfaces, and analog PLLs for chip-to-chip clock

motorola 30-pin simm memory dynamic

Abstract: MCM81000AS10 MCM81000 8L1000 MCM81000S MCM81000-80
Contextual Info: MOTOROLA SC M E M O R Y / A S I C MOTOROLA SIE D • b3b?2Sl H SEM ICO ND U C TO R ^ DDÖ3535 134 * 1 1 0 1 3 r~ f g L TECHNICAL DATA I k "■ Ö MCM81000 MCM8L1000 1Mx8 Bit Dynamic Random Access Module The MCM81000 and MCM8L1000 are 8M dynamic random access memory

PA1712

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MPA17000 Serial EPROMs MPA17128 MPA1765 The MPA17128 and MPA1765 are serial OTP EPROMs. They provide a compact, low pin count, non-volatile configuration store for the MPA1000 devices. MPA17000 devices can be cascaded for increased memory capacity