B32 DIODE Search Results

Contextual Info: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications

diode b32

Abstract: ERB32 marking B32 diode
Contextual Info: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications

B3202

Abstract: diode b32 ERB32 marking code 12A DIODE b32 01 Diode marking code b32
Contextual Info: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications

U30100

Abstract: B3202 diode b32 ERB32 b32 diode Diode marking code b32 DIODE b32 01
Contextual Info: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications

Contextual Info: N AMER PH IL IPS/D ISCR ETE b'lE » bb53T31 0030733 b32 « A P X Product Specification Philips Semiconductors BUK482-100A PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface

Contextual Info: irr BAS 19 BAS 21 Silicon Switching Diodes 32E D • Ö 23 b32 0 QQlb5Q2 3 M S I P SIEMEN S/ SPCLi SEMICONDS # High-speed, high-voltage switch Type Marking BAS 19 BAS 20 BAS 21 JP JR JS Ordering code for versions in bulk Q62702-A242 Q62702-A707 Q62702-A708

diode b32

Abstract: b32 diode BAS21 dual COMMON cathode low leakage diodes DIODE b32 01
Contextual Info: 5bE D I TÎ7057Ô 0007053 b32 « Z E T B SEMICONDUCTOR DICE SWITCHING DIODES Dice type BAS21 Description High voltage single diode "V- o \ " 0 5 ^ ZETEX SEMICONDUCTORS Trr V BR v F Min. Max. at Volts Volts mA HA Volts 250 1.0 100 0.1 200 50* G 24 1.0 75

Contextual Info: MODULES SSE 3 m 4551030 üül5 ^ H O NE YW EL L b32 • H0N1 Honeywell INC/ MICRO ~T~-V - 91 TRANSMITTER The H F M 2 0 1 0 and H F M 2 0 2 5 transmitter modules are designed to provide a tri-level 50% duty cycle optical output. With data formats compatible with Manchester encoded as well as NR Z. The H F M 20 10 , H F M 20 25 and H F M 21 10 allow the user to

C2241

Abstract: HFM1010 7C127 c2431
Contextual Info: MODULES SSE » " 4S51fi3D D015b2R HO N E Y W E L L b32 « H O N l H O Iie V W e ll INC/ MICRO TRA N SM ITTER - r - Yt - 91 The H F M 20 10 and H F M 2 0 2 5 transmitter modules are designed to provide a tri-level 50% duty cycle optical output. With data formats compatible with M anchester encoded as well as N R Z. The H F M 20 10 , H F M 20 25 and H F M 21 10 allow the user to

FS150R06KL4

Contextual Info: Technische Information / technical information FS150R06KL4 IGBT-Module IGBT-modules Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values !" " # # # " 0* 8 = " + > = # !" " " # $%& ' * +,-.

FS150R06KL4

Contextual Info: Technische Information / technical information FS150R06KL4 IGBT-Module IGBT-modules Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values !" " # # # " 0* 8 = " + > = # !" " " # $%& ' * +,-.

F4-150R12KS4

Contextual Info: Technische Information / technical information F4-150R12KS4 IGBT-Module IGBT-modules Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values !" " # # / # " /* 7 8 > " + ? > # !" " " # $%& ' *

Contextual Info: Technische Information / technical information FS150R06KL4 IGBT-Module IGBT-modules Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values !" " # # # " 0* 8 = " + > = # !" " " # $%& ' * +,-.

Contextual Info: Technische Information / technical information FS150R06KL4 IGBT-Module IGBT-modules Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values !" " # # # " 0* 8 = " + > = # !" " " # $%& ' * +,-.

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"#6$1B%3DE1322E14DDD &' 6 6*+,

se024

Abstract: diode b32 b32 diode
Contextual Info: COLLHER SEMICONDUCTOR I NC 4flE 223A7T2 » D0017M2 SE024 o .95 A 'T o 'V - w Outline Drawings SCHOTTKY BARRIER DIODE • Features m Surface m ount device • Low VF • Super high speed switching. • 6 bT « C O L Connection Diagram High reliability by planer design.

marking B32 diode SCHOTTKY

Abstract: ERA81-004 E23371
Contextual Info: ERA81-004 1A Outline Drawing SCHOTTKY BARRIER DIODE • Marking ■ Features • Lo w V f • Super high speed switching Color code : Silver • High reliability by planer design 1 Voltage class ■ Applications o -§ o • High speed power switching Lot No.

MBRS320

Contextual Info: MBRS320 DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

Contextual Info: PA.RCH.LD s e m ic o n d u c t o r Tm MBRS320 SCHOTTKY POW ER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

SE024

Abstract: 15X15
Contextual Info: COLLNER SEMICONDUCTOR INC MAE D • Q0Ü17M5 fibT « C O L SE024 o .9 5 A '-'Po'VOutline D ra w in g s SCHOTTKY BARRIER DIODE ■ Features m Surface m ount device • Low V F • Super high speed sw itching. • High reliability by planer design. C onnection D iagram

Contextual Info: FAIRCHILD S E M IC O N D U C T O R tm MBRS320 SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

MBRS320

Abstract: SMC Package
Contextual Info: MBRS320 FAIRCH.LD M IC D N D U C T Q R Tm DISCR^CPH ro“ SIGNAL SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

KV1650

Abstract: Variable Capacitance Diodes kv1250
Contextual Info: TO KO A M E R I C A INC 17E D TOKO IÌ42Ì V A R IA B LE C A P A C IT A N C E DIODES 4 .5 V Series Variable Capacitance Diodes for A M Description These variable capacitance diodes were specially developed for use as tuning elements in card radios, radio cassettes,

MBRS320

Contextual Info: MBRS320 DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.