Untitled
Abstract: No abstract text available
Text: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications
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ERB32
et-01
ERB32
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diode b32
Abstract: ERB32 marking B32 diode
Text: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications
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ERB32
diode b32
ERB32
marking B32 diode
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B3202
Abstract: diode b32 ERB32 marking code 12A DIODE b32 01 Diode marking code b32
Text: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications
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ERB32
ERB32
B3202
diode b32
marking code 12A
DIODE b32 01
Diode marking code b32
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U30100
Abstract: B3202 diode b32 ERB32 b32 diode Diode marking code b32 DIODE b32 01
Text: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications
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ERB32
ERB32
U30100
B3202
diode b32
b32 diode
Diode marking code b32
DIODE b32 01
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FS150R06KL4
Abstract: No abstract text available
Text: Technische Information / technical information FS150R06KL4 IGBT-Module IGBT-modules Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values !" " # # # " 0* 8 = " + > = # !" " " # $%& ' * +,-.
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FS150R06KL4
FS150R06KL4
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FS150R06KL4
Abstract: No abstract text available
Text: Technische Information / technical information FS150R06KL4 IGBT-Module IGBT-modules Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values !" " # # # " 0* 8 = " + > = # !" " " # $%& ' * +,-.
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FS150R06KL4
FS150R06KL4
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F4-150R12KS4
Abstract: No abstract text available
Text: Technische Information / technical information F4-150R12KS4 IGBT-Module IGBT-modules Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values !" " # # / # " /* 7 8 > " + ? > # !" " " # $%& ' *
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F4-150R12KS4
F4-150R12KS4
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FS150R06KL4 IGBT-Module IGBT-modules Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values !" " # # # " 0* 8 = " + > = # !" " " # $%& ' * +,-.
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FS150R06KL4
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FS150R06KL4 IGBT-Module IGBT-modules Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values !" " # # # " 0* 8 = " + > = # !" " " # $%& ' * +,-.
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FS150R06KL4
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F4-150R12KS4
Abstract: No abstract text available
Text: Technische Information / technical information F4-150R12KS4 IGBT-Module IGBT-modules Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values !" " # # / # " /* 7 8 > " + ? > # !" " " # $%& ' *
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F4-150R12KS4
F4-150R12KS4
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"# 6$1B%3DE1322E14DDD &' 6 6*+,
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DDB6U25N16VR
3DE1322E14DD
2313B
32E36
26323D
32B612
4256F
223DB6
6323D
223DB64B6
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MBRS320
Abstract: No abstract text available
Text: MBRS320 DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS320
100OC
MBRS320
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MBRS320
Abstract: No abstract text available
Text: MBRS320 DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS320
MBRS320
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Untitled
Abstract: No abstract text available
Text: N AMER PH IL IPS/D ISCR ETE b'lE » bb53T31 0030733 b32 « A P X Product Specification Philips Semiconductors BUK482-100A PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface
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bb53T31
BUK482-100A
OT223
Fig-14
riin76ter
bb53R31
DD3D736
OT223.
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diode b32
Abstract: b32 diode BAS21 dual COMMON cathode low leakage diodes DIODE b32 01
Text: 5bE D I TÎ7057Ô 0007053 b32 « Z E T B SEMICONDUCTOR DICE SWITCHING DIODES Dice type BAS21 Description High voltage single diode "V- o \ " 0 5 ^ ZETEX SEMICONDUCTORS Trr V BR v F Min. Max. at Volts Volts mA HA Volts 250 1.0 100 0.1 200 50* G 24 1.0 75
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BAS21
100S2
100il,
diode b32
b32 diode
dual COMMON cathode
low leakage diodes
DIODE b32 01
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Untitled
Abstract: No abstract text available
Text: MODULES SSE 3 m 4551030 üül5 ^ H O NE YW EL L b32 • H0N1 Honeywell INC/ MICRO ~T~-V - 91 TRANSMITTER The H F M 2 0 1 0 and H F M 2 0 2 5 transmitter modules are designed to provide a tri-level 50% duty cycle optical output. With data formats compatible with Manchester encoded as well as NR Z. The H F M 20 10 , H F M 20 25 and H F M 21 10 allow the user to
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10Mbps.
HFM2010
HFM2025
HFM2110
HFM1010
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C2241
Abstract: HFM1010 7C127 c2431
Text: MODULES SSE » " 4S51fi3D D015b2R HO N E Y W E L L b32 « H O N l H O Iie V W e ll INC/ MICRO TRA N SM ITTER - r - Yt - 91 The H F M 20 10 and H F M 2 0 2 5 transmitter modules are designed to provide a tri-level 50% duty cycle optical output. With data formats compatible with M anchester encoded as well as N R Z. The H F M 20 10 , H F M 20 25 and H F M 21 10 allow the user to
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4S51fi3G
D015b2R
HFM2010
HFM2025
HFM2010,
HFM2110
C2241
HFM1010
7C127
c2431
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se024
Abstract: diode b32 b32 diode
Text: COLLHER SEMICONDUCTOR I NC 4flE 223A7T2 » D0017M2 SE024 o .95 A 'T o 'V - w Outline Drawings SCHOTTKY BARRIER DIODE • Features m Surface m ount device • Low VF • Super high speed switching. • 6 bT « C O L Connection Diagram High reliability by planer design.
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223A7T2
D0017M2
SE024
500ns
D001743
22367R2
D0G1744
diode b32
b32 diode
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marking B32 diode SCHOTTKY
Abstract: ERA81-004 E23371
Text: ERA81-004 1A Outline Drawing SCHOTTKY BARRIER DIODE • Marking ■ Features • Lo w V f • Super high speed switching Color code : Silver • High reliability by planer design 1 Voltage class ■ Applications o -§ o • High speed power switching Lot No.
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ERA81-004
DO-41
500ns,
marking B32 diode SCHOTTKY
ERA81-004
E23371
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Untitled
Abstract: No abstract text available
Text: PA.RCH.LD s e m ic o n d u c t o r Tm MBRS320 SCHOTTKY POW ER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS320
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SE024
Abstract: 15X15
Text: COLLNER SEMICONDUCTOR INC MAE D • Q0Ü17M5 fibT « C O L SE024 o .9 5 A '-'Po'VOutline D ra w in g s SCHOTTKY BARRIER DIODE ■ Features m Surface m ount device • Low V F • Super high speed sw itching. • High reliability by planer design. C onnection D iagram
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SE024
500ns
15X15
15X15
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Untitled
Abstract: No abstract text available
Text: FAIRCHILD S E M IC O N D U C T O R tm MBRS320 SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS320
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MBRS320
Abstract: SMC Package
Text: MBRS320 FAIRCH.LD M IC D N D U C T Q R Tm DISCR^CPH ro“ SIGNAL SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS320
SMC Package
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KV1650
Abstract: Variable Capacitance Diodes kv1250
Text: TO KO A M E R I C A INC 17E D TOKO IÌ42Ì V A R IA B LE C A P A C IT A N C E DIODES 4 .5 V Series Variable Capacitance Diodes for A M Description These variable capacitance diodes were specially developed for use as tuning elements in card radios, radio cassettes,
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KV1250
KV1550
KV1550N
KV1250
490pF
200Min.
KV1550
KV1650
Variable Capacitance Diodes
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