B2B DIODE Search Results

philips pin diode

Abstract: B2B diode philips Schottky diode Philips diode BAT56 Diode, Schottky, SOD123
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE Philips Semiconductors bbSBTBl □02b'i?3 • Low leakage current • Low turn-on and high breakdown voltage • Ultra-fast switching speed. I APX Preliminary specification Schottky barrier diode FEA TU RES b2b BAT56

LH1514

Abstract: solid-state DRIVE ACCESS CONTROL
Contextual Info: A T & T Mi''.EC I C L4E D • 005002b 000^050 b2b MA TT E! Preliminary Data Sheet = ' = ? Microelectronics LH1514 — 2 Form A, High-Frequency Solid-State Relay Features Parameter Load Voltage Load Current Typical R on Description LH1514 15 150 5 Units

Contextual Info: N AUER P H IL IP S /D IS C R E T E bTE D b b S B ^ l □Q2b‘173 b2b • APX Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES • Low leakage current BAT56 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MAX. UNIT 60 V • Ultra-fast switching speed.

LH1514

Abstract: DC solid state relay ssr diagram LH1514AAC LH1514AB led and photodiode pair
Contextual Info: A T & T M l '.EC I C b4E D m OOSOO^b ODOROSO b2b •AT T E ! Preliminary Data Sheet É ^ A T gT ■— —• Microelectronics LH1514 — 2 Form A, High-Frequency Solid-State Relay Features Parameter Load Voltage Load Current Typical R o n Description

Bluelab SDK

Abstract: 2022-1-B2B Bluelab BlueCore02 BlueGiga 2022-1 BlueCore 3 Command CSR BLUECORE VIRTUAL MACHINE bluetooth transmitter receiver parallel chip THor 72 qualcomm msm
Contextual Info: WRAP THOR 2022-1-B2B D a t a S h e e t V e r s i o n M o n d a y , 2 . 0 J u n e 0 6 , 2 0 0 5 Copyright 2000-2005 Bluegiga Technologies All rights reserved. Bluegiga Technologies assumes no responsibility for any errors, which may appear in this manual. Furthermore, Bluegiga Technologies reserves the right to alter the hardware,

HFE4807

Abstract: HFE4846 HFE4848 hfe4811 hfd3801 HFD3805 hfe4053 HFD-3000 HFD3850 HFD3882
Contextual Info: HONFYIIIFLL I N C / h u il« y W e il MICRO 5SE » • M 5S 1A 30 0D lS b2b ^23 H H O N 1 CONNECTORIZED C O M K U iN tiN io ■"T-Hi-<r>7 SMA Low-Profile Style SMA-LP LEDs and Integrated Transmitters The SMA-LP devices consist of a Base Part mounted in a Metal SMA Low Profile style connector. LEDs and integrated

Contextual Info: PM6613N 2 to 4-cell Li-Ion, Li-FePO4 battery charger with SMBus interface, N-channel RBFET and BATFET MOSFET selectors Datasheet - production data Applications • Mobile PC: – UMPC/MID and tablets – Netbook and notebook computers Description VFQFPN 3x3 20L

4VQ09CT

Abstract: 4VQ09CTF 4VQ10CT 4VQ10CTF 100V schottky diode
Contextual Info: SCHOTTKY BARRIER DIODE 4VQ09CT 4VQ10CT 4VQ09CTF 4VQ10CTF 4 .4 A / 9 0 ~ 1 0 0 V 6.71264 * 6.4 .252)' ,5-35(.211). 2.38MAX 1.094) FEATURES •TO-251AA Case 2.38MAX (.094) ll.27i.05) Im a x n o TO-252AA Case, Surface Mount Device 6.22Í.245) 5.98Í.235) 0.9Í.035)

5b2 diode

Abstract: specification diode BY 127 diode BY 127 SPECIFICATION BB130 diode
Contextual Info: Philips Semiconductors Product specification AM variable capacitance diode BB130 FEATURES • Matched to 3% k • Leaded plastic package • C28: 18 pF; ratio: 27. - ' - 1 3 -Ih MAM222 APPLICATIONS Fig. 1 Simplified outline {SOD69; TO-92 variant and symbol.

Contextual Info: HARRIS SEMICON» SECTOR rn H A R R IS <1J S E M I C O N D U C T O R bâE » • M3QEE71 GDSDmb TIT ■ HAS RUHUT0040, HUHUIUUbU RURU1Û060 100A, 400V - 600V Ultrafast Diodes December 1993 Features Package J E D E C S T Y L E S IN G L E L E A D TO-218 TO P VIEW

Contextual Info: Bulletin 12096/A International SRectifier sd700c .l s e rie s STANDARD RECOVERY DIODES Hockey Puk Version Features • W ide cu rre n t range ■ High voltage ratings up to 4500V ■ High surge current ca p a bilitie s ■ Diffused junction ■ H ockey Puk version

quanta

Abstract: foxconn DD0ZL1LC301 ICH4 MTW355 USBP220 RN901
Contextual Info: 1 2 3 4 5 6 7 8 5VPCU 5V / 3.3V / 12V 3V_ALWAYS Page : 10 +12V Centrino CLOCK GEN CYPRESS CY28346-2 Page : 10 +5V 3V_S5 INTEL Mobile_479 CPU CLOCK S/S ICS *IC91718 A 5V_S5 3VSUS Page : 10 HOST BUS 400MHz CLK_SDRAM0~5, CLK_SDRAM0~5# 2.5VSUS Page : 10 Page : 2 , 3

quanta

Abstract: dd0zl1lc107 foxconn USBP411 LM358ADR2 PC97551 20493-21 socket 479 intel 855gme PC491 MONTARA-GME KESTREL
Contextual Info: 1 2 3 4 5 6 7 8 5VPCU 5V / 3.3V / 12V 3V_ALWAYS Page : 10 +12V Centrino CLOCK GEN CYPRESS CY28346-2 +5V Page : 10 3V_S5 INTEL Mobile_479 CPU CLOCK S/S ICS *IC91718 A 5V_S5 3VSUS Page : 10 HOST BUS 400MHz CLK_SDRAM0~5, CLK_SDRAM0~5# 2.5VSUS Page : 10 Page : 2 , 3

5167PBTL

Abstract: T6969 YC-160R CN52 T6969-A JEITA-RC9131 T7093A VR51 ZWS240PAF T7094
Contextual Info: DENSEI-LAMBDA ZW S240PAF Series INSTRU CTIO N M ANUAL ZWS240PAF Series Instruction Manual BEFORE USING THE POWER SUPPLY UNIT Pay attention to all warnings and cautions before using the unit. Incorrect usage could lead to an electrical shock, damage to the unit or a fire hazard.

TPS3700DDC

Abstract: TPS25910RSAR
Contextual Info: TPS25910 www.ti.com SLUSAR6C – SEPTEMBER 2012 – REVISED MAY 2013 3-V to 20-V High-Current Load Switch with Programmable Inrush Slew Rate Check for Samples: TPS25910 FEATURES DESCRIPTION • • • The TPS25910 provides highly integrated hot-swap power management and superior protection in

IXSN35N120

Contextual Info: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings

Contextual Info: 5Ü GEC PLESSEY o c to b e riq q g S E M I C O N D U C T O R S DS4178-3.6 DNB61 RECTIFIER DIODE APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. KEY PARAMETERS VRRM 2500V lF Av, 2880A U 32000A ■ Welding. ■

tp 192

Contextual Info: 102b672 00G2432 T6E TH 7999A DRIVE CLOCK SEQUENCER FOR TH 7871 AND TH 7371 CCDs DESCRIPTION TH 7999A drive clock sequencer and TV synchronization generator is dedicated to TH 7871 and TH 7371 CCD sen­ sors. It delivers all the necessary logic CMOS level and

TPS3700DDC

Contextual Info: TPS25910 www.ti.com SLUSAR6A – SEPTEMBER 2012 – REVISED SEPTEMBER 2012 3-V to 20-V High-Current Load Switch with Programmable Inrush Slew Rate Check for Samples: TPS25910 FEATURES DESCRIPTION • • • The TPS25910 provides highly integrated hot-swap

Contextual Info: TPS25910 www.ti.com SLUSAR6B – SEPTEMBER 2012 – REVISED MARCH 2013 3-V to 20-V High-Current Load Switch with Programmable Inrush Slew Rate Check for Samples: TPS25910 FEATURES DESCRIPTION • • • The TPS25910 provides highly integrated hot-swap power management and superior protection in

Contextual Info: TPS25910 www.ti.com SLUSAR6D – SEPTEMBER 2012 – REVISED JANUARY 2014 6.5-A, 20-V Integrated Hotswap with Programmable Inrush Slew Rate Check for Samples: TPS25910 FEATURES DESCRIPTION • • • The TPS25910 device provides highly integrated hotswap power management and superior protection in

NMF3000

Contextual Info: NMF3000, NMF3010 Dual−Stage, Differential Lines Filter with ESD Protection The NMF3000 and the NMF3010 are a dual−stage, differential line ESD and filtering protection scheme for input signals into portable devices. The NMF3000 is the first stage and is located at or very near

BSM200GA100D

Abstract: bsm200ga100 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 GA100D stt25
Contextual Info: bOE D fl23SbD5 OOMS^OM 4Tb • S I E G ■ SIEMENS SIEMENS AKTIENGESELLSCHAF BSM 200 GA 100 D IGBT Module Preliminary Data V CE = 1000 V J c = 2 7 5 A at r c = 25 C / c = 200 A at T c = 80 C • • • • • Power module Single switch Including fast free-wheel diodes

B2B diode

Abstract: NMF3000 NMF3010FCT1G NMF3000FCT1G NMF3010 B-500 diode 499AF
Contextual Info: NMF3000, NMF3010 Dual−Stage, Differential Lines Filter with ESD Protection The NMF3000 and the NMF3010 are a dual−stage, differential line ESD and filtering protection scheme for input signals into portable devices. The NMF3000 is the first stage and is located at or very near