B20100
Abstract: B20100 diode MBRF20100CT
Text: MBRF20100CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF20100CT
AN1040.
B20100
B20100 diode
MBRF20100CT
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b20100
Abstract: B20100 diode MBRF20100CT
Text: MBRF20100CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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MBRF20100CT
AN1040.
b20100
B20100 diode
MBRF20100CT
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b20100
Abstract: b20100 transistor b20100 32 b20100 g B20100 diode 221D AN1040 MBRF20100CT MBRF20100CT-D
Text: MBRF20100CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide
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MBRF20100CT
r14525
MBRF20100CT/D
b20100
b20100 transistor
b20100 32
b20100 g
B20100 diode
221D
AN1040
MBRF20100CT
MBRF20100CT-D
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b20100
Abstract: B20100 diode b20100 32 MBRB20100CTT4 MBRB20100CT
Text: MBRB20100CT Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the use of the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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MBRB20100CT
O-220
b20100
B20100 diode
b20100 32
MBRB20100CTT4
MBRB20100CT
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b20100
Abstract: MBRF20100CTG
Text: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF20100CT
MBRF20100CT/D
b20100
MBRF20100CTG
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b20100
Abstract: MBRF20100CTG 221D-03 B20100 diode
Text: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF20100CT
MBRF20100CT/D
b20100
MBRF20100CTG
221D-03
B20100 diode
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b20100
Abstract: B20100 diode MBRB20100CTT4 b20100 32
Text: MBRB20100CT Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the use of the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features:
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MBRB20100CT
O-220
b20100
B20100 diode
MBRB20100CTT4
b20100 32
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b20100
Abstract: MBRB20100CT MBRB20100CTT4 B20100 diode SMD310 b20100 32 b20100 g
Text: MBRB20100CT Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the use of the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features:
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MBRB20100CT
r14525
MBRB20100CT/D
b20100
MBRB20100CT
MBRB20100CTT4
B20100 diode
SMD310
b20100 32
b20100 g
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b20100
Abstract: b20100 transistor MBRB20100CT MBRB20100CTT4 D2Pak Package B20100 diode SMD310 MBRB201 MBRB20100
Text: MBRB20100CT Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the use of the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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MBRB20100CT
O-220
MBRB20100CT/D
b20100
b20100 transistor
MBRB20100CT
MBRB20100CTT4
D2Pak Package
B20100 diode
SMD310
MBRB201
MBRB20100
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B20100G
Abstract: B20100G diode B20100G AKA AKA B20100 B20100G on aka AKA B20100G B20100 AKA b20100 g B20100G diode AKA b20100
Text: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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MBRF20100CT
MBRF20100CT/D
B20100G
B20100G diode
B20100G AKA
AKA B20100
B20100G on aka
AKA B20100G
B20100 AKA
b20100 g
B20100G diode AKA
b20100
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B20100G
Abstract: B20100G diode AKA B20100 B20100G AKA B20100G on aka AKA B20100G B20100G diode AKA B20100 AKA B20100G to220 b20100
Text: MBRF20100CT SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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MBRF20100CT
MBRF20100CT/D
B20100G
B20100G diode
AKA B20100
B20100G AKA
B20100G on aka
AKA B20100G
B20100G diode AKA
B20100 AKA
B20100G to220
b20100
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b2060 aka
Abstract: AKA B20100
Text: MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT MBR2060CT and MBR20100CT are Preferred Devices SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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MBR2060CT,
MBR2080CT,
MBR2090CT,
MBR20100CT
MBR2060CT
MBR20100CT
b2060 aka
AKA B20100
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B20100G
Abstract: B20100G diode MBRF20100CTG AKA B20100G b20100 b20100 g B20100G AKA B20100G on aka AKA B20100 B20100G diode AKA
Text: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRF20100CT
MBRF20100CT/D
B20100G
B20100G diode
MBRF20100CTG
AKA B20100G
b20100
b20100 g
B20100G AKA
B20100G on aka
AKA B20100
B20100G diode AKA
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B20100G
Abstract: B20100G diode
Text: MBRJ20100CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide
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MBRJ20100CTG
MBRJ20100CT/D
B20100G
B20100G diode
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AKA B20100
Abstract: B20100 AKA B20100 b2060 aka mbr20100ct B20100 diode mbr2060ct B2080 B2090
Text: MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT MBR2060CT and MBR20100CT are Preferred Devices SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features:
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MBR2060CT,
MBR2080CT,
MBR2090CT,
MBR20100CT
MBR2060CT
MBR20100CT
AKA B20100
B20100 AKA
B20100
b2060 aka
B20100 diode
B2080
B2090
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b20100g
Abstract: No abstract text available
Text: MBRB20100CTG, NRVBBS20100CTT4G, NRVBB20100CTT4G SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal.
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MBRB20100CTG,
NRVBBS20100CTT4G,
NRVBB20100CTT4G
MBRB20100CT/D
b20100g
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B20100G
Abstract: B20100G diode B20100G on aka B20100G AKA AKA B20100G AKA B20100 B20100 AKA B20100G to220 B20100 B20100G diode AKA
Text: MBRB20100CT Preferred Device SWITCHMODEt Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com
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MBRB20100CT
O-220
MBRB20100CT/D
B20100G
B20100G diode
B20100G on aka
B20100G AKA
AKA B20100G
AKA B20100
B20100 AKA
B20100G to220
B20100
B20100G diode AKA
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b2060
Abstract: schottky DIODE MOTOROLA B20100 b20100 schottky rectifier motorola mbr motorola b2060 b2060 Motorola b2080 b2070 B2090 MBR2080CT
Text: MOTOROLA Order this document by MBR2060CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR2060CT MBR2070CT MBR2080CT MBR2090CT MBR20100CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features:
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MBR2060CT/D
MBR2060CT
MBR2070CT
MBR2080CT
MBR2090CT
MBR20100CT
MBR2060CT
b2060
schottky DIODE MOTOROLA B20100
b20100
schottky rectifier motorola mbr
motorola b2060
b2060 Motorola
b2080
b2070
B2090
MBR2080CT
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b20100
Abstract: AKA B20100 B20100 AKA B2090 2060CT
Text: MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT MBR2060CT and MBR20100CT are Preferred Devices SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features:
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MBR2060CT,
MBR2080CT,
MBR2090CT,
MBR20100CT
MBR2060CT
MBR20100CT
r14525
MBR2060CT/D
b20100
AKA B20100
B20100 AKA
B2090
2060CT
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b20100
Abstract: MBRB20100CT MBRB20100CTT4 B20100 diode SMD310
Text: MBRB20100CT Preferred Device SW ITCHM O DE Power Rectifier D2PAK Surface Mount Power Package ON Semiconductor “ The D2PAK Power Rectifier employs the use of the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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MBRB20100CT
O-220
r14525
MBRB20100CT/D
b20100
MBRB20100CT
MBRB20100CTT4
B20100 diode
SMD310
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PDF
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B20100
Abstract: rf20100ct F20100CT BRF20100C
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SW ITCHMODE S c h o ttk y P o w e r R e c tifie rs M B R F20100C T M otorola Preferred Device The SW ITCHMO DE Power Rectifier employs the Schottky Barrier principle in a large area m e ta l-to -silico n power diode. S ta te -o f-th e -a rt geom etry features
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRF20100CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF20100CT The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features
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MBRF20100CT/D
MBRF20100CT
b3b72SS
MBRF201
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PDF
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schottky DIODE MOTOROLA B20100
Abstract: B20100
Text: MOTOROLA Order this document by MBRF201OOCT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE S chottky Pow er R ectifier MBRF201OOCT The SW ITCHM O DE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. S tate-of-th e-art geometry features
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OCR Scan
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MBRF201OOCT/D
MBRF20100CT/D
schottky DIODE MOTOROLA B20100
B20100
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PDF
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B20100
Abstract: B2060 b2090 motorola b2060 B20100 diode b20100 g b2060 Motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR2060CT MBR2070CT MBR2080CT MBR2090CT MBR20100CT S w itc h m o d e P o w e r R ectifiers . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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MBR2060CT
MBR2070CT
MBR2080CT
MBR2090CT
MBR20100CT
MBR20100CT
MBR2060CT,
MBR2070CT,
MBR2080CT,
B20100
B2060
b2090
motorola b2060
B20100 diode
b20100 g
b2060 Motorola
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