B2 FERROXCUBE Search Results

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Catalog Datasheet	Type	Document Tags	PDF
ferrite n67 Abstract: TDK pc40 Ferroxcube cross reference tdk ferrite pc40 FERRITES N67 ferrite H5B TDK 3C90 H5B2 N67 FERRITES ferrite n41 Text: SOFT FERRITES MATERIALS CROSS REFERENCE POWER FERRITE EMI FILTER FERRITE Radius Power RP01 RP38 RP95 RP90 RP97 EPCOS N41 3C81 3C91 N67 3C90 3F3 T65 T35 T37 3E4 3E25 3E26 Magnetics F R J - - AVX - B2 A5 A4 A3 TDK - PC40 H5S2 H5B H5B2 3000 2100 5000 6000	Original		PDF
microstrip Abstract: microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier	Original	MRF282SR1 MRF282ZR1 microstrip microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS	PDF
imd 5210 Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282SR1 MRF282ZR1 imd 5210 MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL	PDF
100B270JCA500X Abstract: 100B390JCA500X 100B201JCA500X GX03005522 MRF282 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282SR1 MRF282ZR1 100B270JCA500X 100B390JCA500X 100B201JCA500X GX03005522 MRF282	PDF
MJD310 Abstract: mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282 Text: Freescale Semiconductor Technical Data Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282SR1 MRF282ZR1 MJD310 mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282	PDF
MRF282 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF282-1 Rev. 16, 10/2008 RF Power Field Effect Transistor MRF282SR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282--1 MRF282SR1 MRF282--1 MRF282	PDF
RE65G1R00 Abstract: 56-590-65/3B ferroxcube ferrite beads CDR33BX104AKWS MRF282SR1 MRF282ZR1 Arlon mjd310 MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 RE65G1R00 56-590-65/3B ferroxcube ferrite beads CDR33BX104AKWS MRF282ZR1 Arlon mjd310 MRF282	PDF
27271SL Abstract: MALLORY CAPACITORS MALLORY VARIABLE CAPACITORS RE65G1R00 MALLORY 150 CAPACITORS C18 ph GX-0300-55-22 GX-0300 ph c15 mjd310 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 27271SL MALLORY CAPACITORS MALLORY VARIABLE CAPACITORS RE65G1R00 MALLORY 150 CAPACITORS C18 ph GX-0300-55-22 GX-0300 ph c15 mjd310	PDF
transistor z4 n Abstract: NPN transistor mhz s-parameter mjd310 MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282/D transistor z4 n NPN transistor mhz s-parameter mjd310 MRF282	PDF
MRF282 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 MRF282	PDF
MRF282 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1 MRF282ZR1 DEVICEMRF282/D MRF282	PDF
100B201JT500XT Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282 Text: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282--2 MRF282ZR1 458C-03, NI-200Z MRF282--2 100B201JT500XT CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282	PDF
transistor marking z9 Abstract: Arco Variable Capacitors MRF282 Text: Freescale Semiconductor Technical Data MRF282 Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282 MRF282SR1 MRF282ZR1 transistor marking z9 Arco Variable Capacitors	PDF
MRF282 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282 MRF282SR1 MRF282ZR1 MRF282SR1 MRF282	PDF

ferroxcube for ferrite beads Abstract: MRF282 Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 14, 5/2005 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282 MRF282SR1 MRF282ZR1 MRF282 ferroxcube for ferrite beads	PDF
GX03005522 Abstract: 200S CDR33BX104AKWS MRF282SR1 MRF282ZR1 GX0300-55-22 MRF282 Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 GX03005522 200S CDR33BX104AKWS MRF282ZR1 GX0300-55-22 MRF282	PDF
ferroxcube ferrite beads Abstract: C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414 Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282 MRF282SR1 MRF282ZR1 MRF282SR1 ferroxcube ferrite beads C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414	PDF
Arlon Abstract: MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1* MRF282ZR1* RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1* MRF282ZR1* DEVICEMRF282/D Arlon MRF282	PDF
300 uF 450 VDC Mallory Capacitor Abstract: 365 pF variable capacitor variable capacitor 1 pf Capacitor dimensions MRF282S MRF282Z MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282S MRF282Z RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282S MRF282Z MRF282S 300 uF 450 VDC Mallory Capacitor 365 pF variable capacitor variable capacitor 1 pf Capacitor dimensions MRF282Z MRF282	PDF
J297 Abstract: balun 300 75 ohm transistor bd136 150 watts power amplifier layout Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF899 Designed for 26 Volt UHF large–signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM / AM equipment operating in the range 800 – 960 MHz.	Original	MRF899 J297 balun 300 75 ohm transistor bd136 150 watts power amplifier layout	PDF
TL12 Abstract: 2052-1618 mrf650 Text: MOTOROLA Order this document by MRF650/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF650 Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz.	Original	MRF650/D MRF650 MRF650 TL12 2052-1618	PDF
vk200 ferrite bead Abstract: MRF650 JMC5501 2052161802 RCA 1648 JMC501 TL11 TL12 VK200 c3b5 Text: MOTOROLA Order this document by MRF650/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF650 Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics	Original	MRF650/D MRF650 vk200 ferrite bead MRF650 JMC5501 2052161802 RCA 1648 JMC501 TL11 TL12 VK200 c3b5	PDF
GX-0300 Arlon Abstract: MJD320 ATC 116 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF282S MRF282Z RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier	OCR Scan	MRF282S MRF282Z GX-0300 Arlon MJD320 ATC 116	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices	Original	MRF1550T1/D MRF1550T1 MRF1550FT1	PDF

B2 FERROXCUBE Search Results

B2 FERROXCUBE Datasheets Context Search

ferrite n67

microstrip

imd 5210

100B270JCA500X

MJD310

MRF282

RE65G1R00

27271SL

transistor z4 n

MRF282

MRF282

100B201JT500XT

transistor marking z9

MRF282

ferroxcube for ferrite beads

GX03005522

ferroxcube ferrite beads

Arlon

300 uF 450 VDC Mallory Capacitor

J297

TL12

vk200 ferrite bead

GX-0300 Arlon

Untitled