ZENER B18
Abstract: b18 zener
Text: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “ Characteristics ” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
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BZX55B
ZENER B18
b18 zener
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BZX55
Abstract: BZX55-B82 ZENER B18 zener b27 BZX 3,3 B2V7 BZX55-B15 BZX55B Zener B12 b2v4
Text: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “ Characteristics ” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
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BZX55B
BZX55
BZX55-B82
ZENER B18
zener b27
BZX 3,3
B2V7
BZX55-B15
BZX55B
Zener B12
b2v4
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BZX55
Abstract: zener b27 b16 zener b2v4 B20 zener diode glass BZX55B zener BZX 180 b9v1 B2V7
Text: BZX55B min. 27.5 SILICON PLANAR ZENER DIODES max. 2.9 White Cathode Band Part No. Black Color 1.9 min. 27.5 max. max. 0.5 Glass case JEDEC DO-34 Dimensions in mm Absolute Maximum Ratings Ta = 25 oC Parameter Symbol Power Dissipation Ptot Value Unit 1) mW
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BZX55B
DO-34
BZX55
zener b27
b16 zener
b2v4
B20 zener diode glass
BZX55B
zener BZX 180
b9v1
B2V7
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BZX55
Abstract: BZX55-B15 zener b27 bzx b27 bzx55 024 BZX55B equivalent ZENER B18 zener B51 BZX b18 bzx b22
Text: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “Characteristics” Power Dissipation C C 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
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BZX55B
BZX55
BZX55-B15
zener b27
bzx b27
bzx55 024
BZX55B equivalent
ZENER B18
zener B51
BZX b18
bzx b22
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bzx55 024
Abstract: zener b27 ZENER B18 b16 zener BZX55 bzx b27 b2v4 b5v6 diode zener B16 BZX55B
Text: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “Characteristics” Power Dissipation C C 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
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BZX55B
bzx55 024
zener b27
ZENER B18
b16 zener
BZX55
bzx b27
b2v4
b5v6
diode zener B16
BZX55B
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MBC50-10B12
Abstract: 68b1 MBC50-8B1 MBC50-20B12 MBC50-82B1
Text: Capacitors: MNOS Series Bare Die • Low leakage current The Aeroflex / Metelics MIS capacitors utlize a silicon nitride dielectric over a thermally grown silicon dioxide base. The resultant composite dielectric exhibits low leakage current and insertion loss with excellent long-term stability. The
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MC2DXXX010-010
MC2DXXX01
MC2DXXX020-020
MSS20
MSS39
MBC50-10B12
68b1
MBC50-8B1
MBC50-20B12
MBC50-82B1
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zener diode b27
Abstract: 5B1 zener diode B20 zener diode smd 5b1 zener Diode B22 diode zener B16 zener smd marking EA smd diode code B12 6b2 zener diode smd transistor marking ey
Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)
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MM3ZB39
OD-323
OD-323
zener diode b27
5B1 zener diode
B20 zener diode
smd 5b1
zener Diode B22
diode zener B16
zener smd marking EA
smd diode code B12
6b2 zener diode
smd transistor marking ey
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smd 5b1
Abstract: smd transistor 5B1 5B1 zener diode smd transistor marking ey B20 zener diode planar transistor 5B1 ez 724 zener diode 4B3 B15 diode smd b36 smd diode
Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)
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MM3ZB39
OD-323
OD-323
smd 5b1
smd transistor 5B1
5B1 zener diode
smd transistor marking ey
B20 zener diode
planar transistor 5B1
ez 724
zener diode 4B3
B15 diode smd
b36 smd diode
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MSPD2018
Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
Text: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for
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A17084
MSPD2018
m21 sot23 transistor
MSPD1012-H50
MSPD1000-E50/E50SM
mpn7620-et47
MSPD1012-E50
mpn7610
mbd1057
MMD0840
MPN7345
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5B1 zener diode
Abstract: 6b2 zener diode zener diode 4B3 B20 zener diode smd diode b13 zener diode b27 b16 zener b36 smd diode zener b27 smd diode code B12
Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)
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MM3ZB39
OD-323
OD-323
5B1 zener diode
6b2 zener diode
zener diode 4B3
B20 zener diode
smd diode b13
zener diode b27
b16 zener
b36 smd diode
zener b27
smd diode code B12
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ZENER B18
Abstract: b16 zener zener b27 zener 5B6 5B1 IR zener 5B1 zener 6b8 zener 3b9 zener B13 zener b30
Text: MM3Z2B4 . MM3B47 200 mW - 2% MM3Z2B4 . MM3B47 (200 mW - 2%) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2012-08-22 Maximum power dissipation Maximale Verlustleistung 1.7±0.1 1±0.1 Nominal Z-voltage – Nominale Z-Spannung
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MM3B47
OD-323
UL94V-0
ZENER B18
b16 zener
zener b27
zener 5B6
5B1 IR
zener 5B1
zener 6b8
zener 3b9
zener B13
zener b30
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Untitled
Abstract: No abstract text available
Text: 2BZX84B3V0 . 2BZX84B47 300 mW 2BZX84B3V0 . 2BZX84B47 (300 mW) Surface mount Silicon Planar Dual Zener Diodes Silizium-Planar-Zener-Doppel-Dioden für die Oberflächenmontage Version 2014-04-04 Maximum power dissipation Maximale Verlustleistung 2.9 1.1
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2BZX84B3V0
2BZX84B47
OT-23
O-236)
UL94V-0
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LHIR3333-T50
Abstract: No abstract text available
Text: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only INFRARED EMITTING DIODES LHIR3333-T50 DATA SHEET DOC. NO : QW0905-LHIR3333-T50 REV. : A A DATE : 08 - Dec - 2004 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/4 PART NO. LHIR3333-T50 Package Dimensions
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LHIR3333-T50
QW0905-LHIR3333-T50
54TYP
LHIR3333-T50
MIL-STD-202:
MIL-STD-750:
MIL-STD-883:
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LVIR3333
Abstract: DSA004298
Text: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only OFFICE:7F.,NO.208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien,Taiwan R.O.C TEL: 02 22677686(REP) FAX:(02)22675286,(02)22695616 INFRARED EMITTING DIODES LVIR3333 DATA SHEET DOC. NO : QW0905-LVIR3333 REV.
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LVIR3333
QW0905-LVIR3333
54TYP
MIL-STD-202:
MIL-STD-750:
MIL-STD-883:
LVIR3333
DSA004298
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Untitled
Abstract: No abstract text available
Text: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only INFRARED EMITTING DIODES Pb Lead-Free Parts LH13330-PF DATA SHEET DOC. NO : QW0905- LH13330-PF REV. : A DATE : 10 - Jul. - 2008 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/5 PART NO. LH13330-PF
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LH13330-PF
QW0905-
54TYP
MIL-STD-202:
MIL-STD-750:
MIL-STD-883:
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Untitled
Abstract: No abstract text available
Text: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only INFRARED EMITTING DIODES LHIR13743-T50 DATA SHEET DOC. NO : QW0905-LHIR13743-T50 REV. : B DATE : 30 - May - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/4 PART NO. LHIR13743-T50 Package Dimensions
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LHIR13743-T50
QW0905-LHIR13743-T50
54TYP
LHIR13743-T50
MIL-STD-202:
MIL-STD-750:
MIL-STD-883:
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Untitled
Abstract: No abstract text available
Text: 12E D I SANYO SEMICONDUCTOR CORP 7 cH 7 Q 7 b 0003530 5 '1|!b12Ö§ 3054A M onolithic Digital IC High-Voltage High-Current Darlington Driver 1904B Functions and Features . 4-channel, high-voltage 65V , high-current (1.5A) Darlington driver . PNP input low-active type
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1904B
054A-D16FIC
7097KI/6275KI
00D3531
LB1206
100mA
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Untitled
Abstract: No abstract text available
Text: 020 SPDT DC TO 18 SMA 023DNH SPDT, HOT DC TO 36 N 123 SPDT DC TO 18 SMA FAILSAFE, 28V ✓ 025-A234-A1D-4C0 123D SPDT DC TO 18 SMA FAILSAFE, 28V ✓ 026-A12-A1D-4C0 123T SPDT DC TO 18 SMA FAILSAFE, 28V 020-B2-A1D-4A0 123L SPDT DC TO 18 SMA LATCHING, 28V 026-B12-A1D-4A0
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023DNH
026-A12-A1D-4C0
020-B2-A1D-4A0
026-B12-A1D-4A0
123LT
025-A234-A1D-4C0
025-A0-A1D-4C0
062-D12-A1D-4C2
130-A2-A1D-4C1
130-A234-A1D-4C1
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Untitled
Abstract: No abstract text available
Text: QSFCT2X3244 PRELIMINARY 3.3 Volt CMOS 16-BÌt Ô QS74FCT2X3244 Buffer/Line Driver FEATURES/BENEFITS • • • • • Pin and function compatible to the QSFCT2X244 Available in 40-pin QVSOP Undershoot clamp diodes on all inputs Ground bounce controlled outputs
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QSFCT2X3244
QS74FCT2X3244
QSFCT2X244
40-pin
FCT2X3244
16-bit
2X3244
2X3244A
DSL-00063-00
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Untitled
Abstract: No abstract text available
Text: QSFCT2X3244 PRELIMINARY Q 3.3 Volt CMOS 16-BÌt Buffer/Line Driver QS74FCT2X3244 FEATURES/BENEFITS • • • • • Pin and function compatible to the QSFCT2X244 Available in 40-pin QVSOP Undershoot clamp diodes on all inputs Ground bounce controlled outputs
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QSFCT2X3244
QS74FCT2X3244
QSFCT2X244
40-pin
FCT2X3244
16-bit
2X3244
2X3244A
MDSL-00063-00
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Untitled
Abstract: No abstract text available
Text: QSFCT2X3244 PRELIMINARY 3.3 Volt CMOS 16-Bit Buffer/Line Driver Q QS74FCT2X3244 FEATURES/BENEFITS Pin and function compatible to the QSFCT2X244 Available in 40-pin QVSOP Undershoot clamp diodes on all inputs Ground bounce controlled outputs Low power QCMOS: 0.07 |aW typ static
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QSFCT2X3244
16-Bit
QS74FCT2X3244
QSFCT2X244
40-pin
FCT2X3244
006in.
003in.
MO-154BB
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SD1100C02L
Abstract: SD1500C14L SD1700C25K
Text: International @»SRectifier Diodes Standard Recovery 910-2330 Amps lF AV @ ÎH S Part Number Vr r m (V) SD1100C02L SD1100C04L SD1100C06L SD1100C08L SD1100C10L SD1100C12L SD1100C14L SD1100C16L SD1100C18L SD1100C20L SD1100C22L SD1100C24L SD1100C25L SD1100C26L
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SD1100C02L
SD1100C04L
SD1100C06L
SD1100C08L
SD1100C10L
SD1100C12L
SD1100C14L
SD1100C16L
SD1100C18L
SD1100C20L
SD1500C14L
SD1700C25K
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Untitled
Abstract: No abstract text available
Text: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cG R lc IcM = 20 T oase = 25 /80 °C R ge T oase = 25 /80 °C; tp = 1 ms V ges Ptot per IGBT, T oase = 25 °C Tj, Tstg) Visol humidity climate V V A A V W °C V 1200 1200
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mp 1008
Abstract: No abstract text available
Text: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LIG ITE K OFFICE:7F.,NO.208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien.Taiwan R.O.C TEL: 02 22677686(REP) FAX: (02)22675286, (02)22695616 INFRARED EMITTING DIODES LSIR3333/H0 DATA SHEET DOC. NO : QW0905-LSIR3333/H0
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LSIR3333/H0
QW0905-LSIR3333/H0
54TYP
10min)
L-STD-202:
MIL-STD-750:
MIL-STD-883:
mp 1008
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