TSX NANO CABLE
Abstract: TSX NANO PL7-07 SES N 2402 capteur LDR TSX 07 31 2428 TSX NANO CABLE TSX 07 TSX 07 31 1628 GMOV schneider pl7
Text: B12 Automatismes programmables industriels Automates TSX Nano Automates TSX Nano Introduction Le TSX Nano est un automate programmable au service des petits automatismes présent dans tous les secteurs d’activité. Ses caractéristiques principales sont la
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Untitled
Abstract: No abstract text available
Text: 12E D I SANYO SEMICONDUCTOR CORP 7 cH 7 Q 7 b 0003530 5 '1|!b12Ö§ 3054A M onolithic Digital IC High-Voltage High-Current Darlington Driver 1904B Functions and Features . 4-channel, high-voltage 65V , high-current (1.5A) Darlington driver . PNP input low-active type
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1904B
054A-D16FIC
7097KI/6275KI
00D3531
LB1206
100mA
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lm2490
Abstract: lm2490 5V regulator schematic diagram 12V to 3V dc voltage regulator LM2990 lm2490 -5 10801 LM2940 LM2990S-15 LM2990T-12 LM2990T-15
Text: LM2990 Negative Low Dropout Regulator General Description The LM2990 is a three-terminal low dropout 1 ampere negative voltage regulator available with fixed output voltages of b5 b5 2 b12 and b15V The LM2990 uses new circuit design techniques to provide low dropout and low quiescent current The dropout voltage
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LM2990
LM2990
20-3A
lm2490
lm2490 5V regulator
schematic diagram 12V to 3V dc voltage regulator
lm2490 -5
10801
LM2940
LM2990S-15
LM2990T-12
LM2990T-15
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Untitled
Abstract: No abstract text available
Text: 020 SPDT DC TO 18 SMA 023DNH SPDT, HOT DC TO 36 N 123 SPDT DC TO 18 SMA FAILSAFE, 28V ✓ 025-A234-A1D-4C0 123D SPDT DC TO 18 SMA FAILSAFE, 28V ✓ 026-A12-A1D-4C0 123T SPDT DC TO 18 SMA FAILSAFE, 28V 020-B2-A1D-4A0 123L SPDT DC TO 18 SMA LATCHING, 28V 026-B12-A1D-4A0
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023DNH
026-A12-A1D-4C0
020-B2-A1D-4A0
026-B12-A1D-4A0
123LT
025-A234-A1D-4C0
025-A0-A1D-4C0
062-D12-A1D-4C2
130-A2-A1D-4C1
130-A234-A1D-4C1
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RM3 transistors
Abstract: B13 transistors
Text: BIPOLAR TRANSISTORS E q u ivalen t Circuit F W D : F ree w h e e l d io d e S U D . S p e e d u p d io d e F R D : F ast re c o v e ry d iode Fig. A1 Fig. B1 Fig. B2 Fig. B3 Fig. B4 Fig. B5 Fig. B6 Fig. B8 Fig. B9 Fig. B11 Fig. B12 D io d e Diode Fig. B10
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B21oE2
B1oE20oE2
RM3 transistors
B13 transistors
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Untitled
Abstract: No abstract text available
Text: RF2312 • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations 3 The RF2312 is a general purpose, low cost high linearity
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RF2312
RF2312
1000MHz,
001GHz
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DIODE W1 SMD
Abstract: DIODE B12 B12 DIODE smd diode code B12 W1 diode diode w1 TSS0230L smd diode w1 smd diode b12 smd diode code A
Text: TSS0230L SMD Schottky Barrier Diode Small Signal Diode 0402（DFN1006） Features Halogen free low forward voltage Designed for mounting on small surface Extremely thin/leadless package Majority carrier conduction Green compound Halogen free with suffix "G" on
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TSS0230L
0402DFN1006
C/10s
MIL-STD-202,
DIODE W1 SMD
DIODE B12
B12 DIODE
smd diode code B12
W1 diode
diode w1
smd diode w1
smd diode b12
smd diode code A
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marking B12 diode SCHOTTKY
Abstract: DIODE B12 smd diode code B12 B12 DIODE smd marking b12 marking B12 diode smd diode b12 diode marking code B12 TSC Date Code marking smd diode marking code g
Text: RB520G-30 Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-723F B Features A C Ultra smail mold type,high reliability,low IR low VF Surface device type mounting D Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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RB520G-30
OD-723F
OD-723F
MIL-STD-202,
C/10s
marking B12 diode SCHOTTKY
DIODE B12
smd diode code B12
B12 DIODE
smd marking b12
marking B12 diode
smd diode b12
diode marking code B12
TSC Date Code marking
smd diode marking code g
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Untitled
Abstract: No abstract text available
Text: RB520G-30 Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-723F B Features A C Ultra smail mold type,high reliability,low IR low VF Surface device type mounting D Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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RB520G-30
OD-723F
OD-723F
MIL-STD-202,
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transistor package SOT-723
Abstract: SOT-723 723 ic
Text: 2SA2029-Q/R/S PNP bipolar Transistor Small Signal Diode SOT-723 A F B E Features Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on
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2SA2029-Q/R/S
OT-723
MIL-STD-202,
C/10s
31TYP
-50mA
transistor package SOT-723
SOT-723
723 ic
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marking B12 diode SCHOTTKY
Abstract: MBRS120T3 diode marking code B12
Text: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS120T3
marking B12 diode SCHOTTKY
MBRS120T3
diode marking code B12
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marking B12 diode SCHOTTKY
Abstract: MBRS120T3 marking b12 rectifier diode B12
Text: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS120T3
Re120T3
marking B12 diode SCHOTTKY
MBRS120T3
marking b12
rectifier diode B12
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Untitled
Abstract: No abstract text available
Text: TESDC24V Bi-directional ESD Protection Diode Small Signal Diode SOD-323 Features Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) Protects one birectional I/O line Working Voltage : 24V Pb free version, RoHS compliant, and Halogen free
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TESDC24V
OD-323
IEC61000-4-2
IEC61000-4-4
OD-323
MIL-STD-202,
C/10s
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DIODE B12 51
Abstract: heat exchanger power led heat sink ASM01C020 ASM14 australia heat sink ASM02C040 ASM05C060 44In42Sn14Cd
Text: Industrial Microphotonics Company CW Laser Diode Array Submodules SILVER BULLET TM • Packaged 1, 2, 3 Bar Laser Diode Array · Easily Soldered to a Heat Exchanger · Available Wavelengths 785-1064nm PRODUCT CHARACTERISTICS The Silver BulletTM is a fundamental building block for constructing high-power diode
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785-1064nm)
laser2000
B-12/99
DIODE B12 51
heat exchanger
power led heat sink
ASM01C020
ASM14
australia heat sink
ASM02C040
ASM05C060
44In42Sn14Cd
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DIODE B12
Abstract: B12 diode ERB12-02 Diode Mark B12 DIODE 1.0A 1000V ERB12-10 rectifier diode B12 b12 marking erb12 general purpose diode marking code -06
Text: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1
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ERB12
ERB12-01
ERB12-02
ERB12-04
ERB12-06
ERB12-10
ERB12
DIODE B12
B12 diode
ERB12-02
Diode Mark B12
DIODE 1.0A 1000V
ERB12-10
rectifier diode B12
b12 marking
general purpose diode marking code -06
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Diode Mark B12
Abstract: B12 diode DIODE B12 marking B12 diode ERB12-02 ERB12-06 ERB12 B12 mark diode marking code B12 DIODE ERB12
Text: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1
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ERB12
ERB12-01
ERB12-02
ERB12-04
ERB12-06
ERB12-10
ERB12
Diode Mark B12
B12 diode
DIODE B12
marking B12 diode
ERB12-02
ERB12-06
B12 mark
diode marking code B12
DIODE ERB12
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ERB12-02
Abstract: Diode Mark B12 h2 marking general purpose diode marking code -06 ERB12-10
Text: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1
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ERB12
ERB12-01
ERB12-02
ERB12-04
ERB12-06
ERB12-10
ERB12
Diode Mark B12
h2 marking
general purpose diode marking code -06
ERB12-10
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MBD4448HSDW
Abstract: mbd4448ht MBD4448
Text: MBD4448HAQW/HADW/HCDW/HSDW/HTW Switching Diode Small Signal Diode SOT-363 Features Fast switching speed Surface device type mounting Moisture sensitivity level 1 High Conductance Power Dissipation For General Purpose Switching Applications Pb free version and RoHS compliant
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MBD4448HAQW/HADW/HCDW/HSDW/HTW
OT-363
OT-363
MIL-STD-202,
MBD4448HSDW
mbd4448ht
MBD4448
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BAV99W RFG
Abstract: No abstract text available
Text: BAV99W Switching Diode Array Preliminary Small Signal Diode SOT-323 A F B Features E Surface device type mounting Moisture sensitivity level 1 C G D Matte Tin Sn lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on
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BAV99W
OT-323
OT-323
MIL-STD-202,
C/10s
BAV99W RFG
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marking B12 diode SCHOTTKY
Abstract: b12 marking MBRS120T3 DIODE B12 51 DIODE B12 B12 diode b12 diodes on semiconductor marking B12 diode
Text: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS120T3
r14525
MBRS120T3/D
marking B12 diode SCHOTTKY
b12 marking
MBRS120T3
DIODE B12 51
DIODE B12
B12 diode
b12 diodes on semiconductor
marking B12 diode
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Mbd4448
Abstract: W1 sot 363 HSDW Sot-363 11* SOT-363 mbd4448ht 208 SOT-363 MBD4448HTW MBD4448HAQW P0 sot 363
Text: MBD4448HAQW/HADW/HCDW/HSDW/HTW Switching Diode Small Signal Diode SOT-363 Features Fast switching speed Surface device type mounting Moisture sensitivity level 1 High Conductance Power Dissipation For General Purpose Switching Applications Pb free version and RoHS compliant
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MBD4448HAQW/HADW/HCDW/HSDW/HTW
OT-363
OT-363
MIL-STD-202,
C/10s
051BSC
083BSC
Mbd4448
W1 sot 363
HSDW
Sot-363
11* SOT-363
mbd4448ht
208 SOT-363
MBD4448HTW
MBD4448HAQW
P0 sot 363
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Untitled
Abstract: No abstract text available
Text: TSZU52C2V0 – TSZU52C39 Pb RoHS 150mW SMD Zener Diode COMPLIANCE 0603 Features 150mW Power dissipation. High voltages from 2 ~ 39V Designed for mounting on small surface Extremely thin/leadless package Pb free product Mechanical Data
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TSZU52C2V0
TSZU52C39
150mW
MIL-STD-750,
TSZU52C18
TSZU52C20
TSZU52C22
TSZU52C24
TSZU52C27
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DIODE B12
Abstract: B12 diode CCD77-00 DIODE B12 45 21-B12 Scientific Imaging Technologies essex 8027 e2v ccd ccd 512 x 512
Text: CCD77-00 Front Illuminated High Performance IMO Device FEATURES * 512 by 512 Image Format * Image Area 12.3 x 12.3 mm * Full-Frame Operation * 24 mm Square Pixels * Low Noise Output Amplifiers * 100% Active Area * Inverted Mode Operation APPLICATIONS * Spectroscopy
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CCD77-00
CCD77
DIODE B12
B12 diode
DIODE B12 45
21-B12
Scientific Imaging Technologies
essex 8027
e2v ccd
ccd 512 x 512
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ZENER B18
Abstract: b18 zener
Text: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “ Characteristics ” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
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BZX55B
ZENER B18
b18 zener
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