B 754 Search Results

Contextual Info: 13 10 12 .188 REF 4X R — •193 2Xÿ 4~9Ö REF 1 1SO 60.96 RECOMMENDED PANEL CUTOUT MAX PANEL THICKNESS .080/2.03 i znn + nns 2X 5.99 ±0.13 1 nqz 1S54 REF .236 5.99 REF 'S II* B B Is . B B .754 19.16 B '“ w ^ E F B 2X 5.84 ±0.13 RECOMMENDED PCB LAYOUT

507c

Abstract: 407C 307C 5l32
Contextual Info: |zstruv p~vstruvq 3}.y/ w-,1/-*y/ z64>?<6= B D[YZ U`cd aWbX`b^S_UW B MaWU[S] [_dWYbSdW U[bUe[d. bW][ST]W B M`][V TScW VWc[Y_. cdST]W cdbeUdebW B Q[aWb Sed`^Sd[U a`c[d[`_[_Y [^a]W^W_dSd[`_ 1@;7548 v;8754>7:9= Q[aWb U`_db`] w|v/vw1y/}01}w0 H`b^[_S] f`]dSYW

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

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M5M44400

Abstract: b859
Contextual Info: MITSUBISHI LSIs DRAM MODULE MH2M36CYJ-5,-6,-7/ M H2M36CNYJ-5,-6,-7 F A ST PAG E M O DE 75497472-B IT(2097152-W O R D B Y 36-B IT ) DYN A M IC RAM DESCRIPTION The MH2M36CYJ/CNYJ is 2097152-w ord x 36 -b it dynamic RAM and consists of 18 industry standard 1M x 4 dynamic

SN 754538

Abstract: 75451B B 722 P 55450B 55451B 75450B 75452B 75453BTC transistor ac 125 equivalent 75452BTC
Contextual Info: 55/75450B • 55/75451B • 55/75452B 55/75453B • 55/75454B DUAL HIGH SPEED PERIPHERAL DRIVERS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R IP TIO N - T he 5 5 /7 5 4 5 0 B , 5 5 /7 5 4 5 1 B, 5 5 /7 5 4 5 2 B , 5 5 /7 5 4 5 3 B and 5 5 /7 5 4 5 4 B are Dual High Speed General Purpose Interface

304P

Abstract: XB 805 V8754 svfsuwv
Contextual Info: ~vtustv xy*v3},{ .y*v3 z64>?<6= q M`][V TScW VWc[Y_. cdST]W cdbeUdebW q HSdeb[_Y U[bUe[d. cdST]W S_V bW][ST]W aWbX`b^S_UWc q MebXSUW ^`e_d[_Y dWUZ_`]`Yi. SVfS_UWV UbSXdg`b\ 0@;7548 v;8754>7:9= @W]Si[_Y U`_db`] `X ]S^a + bSV[Sd`b w|v.vw0y.}/0}w/ I`b^[_S] f`]dSYW

100MN

Contextual Info: 13 10 12 5.84 ±0.13 ir m RECOMMENDED PCB LAYOUT COMPONENT VIEW TOLERANCES ARE NON-ACCMULATIVE 1 09? .154 REF 2XÇ1 Ï 9 Ï REF is . B II* B REF B .754 19.16 B .236 REF 5.99 n il n | -Y- MX 1 58.42 N O TE S : 1. M A T E R IA L S : HOUSING: P O L Y E S T E R P B T , G L A S S F IL L E D , U L 9 4 V - 0 ,

03E1

Abstract: 00CF ISD33000 b0334 04D5
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g554

Contextual Info: 55/75450B-F.N • 55/75451 B /2 B /3 B /4 B -N .T DESCRIPTION FEATURES Series 55450B/75450B d ual pe riphe ral d riv ­ ers are a fa m ily o f versatile devices designed fo r use in system s th a t e m p lo y T T L o r DTL logic. The 55450B/75450B fa m ily is fu n c ­

Contextual Info: Ether net cabling Contents Page B – Ethernet cabling Ethernet cabling overview B2 Profil-specific Cabling 4-wires IP 20 B.1 8 IP 65 / IP 67 B.1 22 Cables B.1 96 Tools B.1 104 Structured Cabling 8-wires IP 20 B.2 8 IP 65 / IP 67 B.2 22 Cables B.2 90

ABB B45

Contextual Info: 1 2345567823495671 81B647456B743374B45387B 16 B3B743!8534B6A4B B B "BF87BA4#69B$456873B%&' B5#B 8A4B974 B "B*6+ " "B(537!334#B!4787A594B 5,3B8B'-.453/B49 588+B

Contextual Info: i H I R DA N G L EP R O J E C T I O NI ALTERATION I S S U E ITEM CODE ECWHA3Cl02 B 1 3C112 ( )B H 3C1220B 1 3C132()B 1 3C1520B f I 3C1620B f I 3C1820B f I 3C2020B 1 3C222 0 B H 3C2420B H 3C272 ( )B H 3C3020B 1 3C332 0 B H 3C362 0 B 1 1 3C392 0 B H 3C4320B

ADC hard radiation

Abstract: 28/ADC hard radiation EEPROM 16MB SCS750 HSN-3000 79LV2040 29F0408 rad-pak 358 9240LP XP-40
Contextual Info: Microelectronics’ Product List Product Description Part Number Radiation Technology Package Screening Style Level FP DIP QFP Specification Status S or B Equivalent Data Sheet Active S, B, I, E S, B, I, E S, B, I, E S, B, I, E S, B, I, E Data Sheet Data Sheet

Contextual Info: Typical Performance • MALLOriY Disc Ceramic Capacitors i B i a i i B i s i s c * i i B B X i i i « « H i R B i i * i « R « i i i « * f l « i 8 B i a i i i B « a a i i i 9 S i i S 8 B i i s i CLASS 1 Capacitance vs. Temperature NPO N80 N150 N220 N330

2T908A

Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
Contextual Info: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,

108 046f

Abstract: 03e1 046F 044f 03C24 b 0334 046b
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u6055b

Abstract: Telefunken Electronic u6055b U6056B TELEFUNKEN El 156 Telefunken Electronic 6050B 6052B U6055B-FP U6056B-FP SMQ Series 510 DIODE
Contextual Info: • M4E D E3 a^aoo^b 0Q10A52 2 E3ALGG TELEFUNKEN ELECTRONIC U 6055 B • U 6056 B MICROCOMPUTER CONTROLLED LOCAL MULTIPLEX SYSTEM Technology: Bipolar Application: Transmitter U6055 B and receiver (U 6056 B) for "parallel-seriai-parallel"-conversion of a 8 or 16 bit

304P

Contextual Info: |ztustx q~vtustxr xy*v3},{ .y*v3 z64>?<6= o M`][V TScW VWc[Y_. cdST]W cdbeUdebW o GSdeb[_Y U[bUe[d. cdST]W S_V bW][ST]W aWbX`b^S_UWc o MebXSUW ^`e_d[_Y dWUZ_`]`Yi. SVfS_UWV UbSXdg`b\ 0@;7548 v;8754>7:9= @W]Si[_Y U`_db`] `X ]S^a + bSV[Sd`b w|v.vw0y.}/0}w/

3bdaa

Abstract: A45B 50B06 D876
Contextual Info: 123455617897A66666 81983B6 6!"B6##47456!"B7433$74B45387B B B 1 %99$7!9&B447B'!5B2 B B54!7B*478B 1 6 6!"B8$$B+,B 1 -94""45B744!!6"6&.B4/45B4"81BDB!B 1 ,!"67!40B!50B4A47!$74B98A453!40B 1 -94""45B"85 47AB3!6"6&B

456B

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b675

Abstract: .c15
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B 527

Abstract: 304P
Contextual Info: |ztust{ q~vtust{r xy*v3},{ .y*v3 z64>?<6= o M`][V TScW VWc[Y_. cdST]W cdbeUdebW o GSdeb[_Y U[bUe[d. cdST]W S_V bW][ST]W aWbX`b^S_UWc o MebXSUW ^`e_d[_Y dWUZ_`]`Yi. SVfS_UWV UbSXdg`b\ 0@;7548 v;8754>7:9= @W]Si[_Y U`_db`] `X ]S^a + bSV[Sd`b w|v.vw0y.}/0}w/

dvr circuit diagram

Abstract: st l 9302 transistor d145 mos 9368 9374 f 9368 7 seg bcd 74LS49 D133 D142
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE I26 75492, 9664 124 9613 [14 □ IN D 13 □ OUT 12 □ OUT 11 □ Vss 10 □ OUT 9 O UT □ 8 □ IN C 8 OUTPUT A □ V cc 7 2 +IN A Q □ OUT B 6 3 -IN A ^ □ +IN B 5 4 GND □ -IN B CONTROL p VOLTAGE 4 - D