B 595 TRANSISTOR Search Results

B 595 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

B 595 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TRANSISTOR S1d Abstract: SCT-595 Contextual Info: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking SMBTA 42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595	Original	VPW05980 SCT-595 Oct-14-1999 EHP00842 EHP00843 TRANSISTOR S1d SCT-595	PDF
NPN S2D Abstract: SCT-595 SCT59 Contextual Info: SMBTA 92M PNP Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 42M NPN 3 2 1 VPW05980 Type Marking SMBTA 92M s2D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595	Original	VPW05980 SCT-595 Oct-14-1999 EHP00881 EHP00882 NPN S2D SCT-595 SCT59	PDF
SCT-595 Abstract: VPW05980 Contextual Info: SMBTA 06M NPN Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 56M PNP 3 2 1 VPW05980 Type Marking SMBTA 06M s1G Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595 Maximum Ratings	Original	VPW05980 SCT-595 EHP00821 EHP00819 EHP00820 EHP00815 Oct-14-1999 SCT-595 VPW05980	PDF
VPW05980 Contextual Info: SMBTA 56M PNP Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 06M NPN 3 2 1 VPW05980 Type Marking SMBTA 56M s2G Pin Configuration 1=B 2=C 3=E Package 4 n.c. 5 = C SCT-595 Maximum Ratings	Original	VPW05980 SCT-595 Package10 Oct-14-1999 EHP00852 EHP00850 EHP00851 EHP00846 VPW05980	PDF
Q62702-A3473 Abstract: SCT-595 Contextual Info: SMBTA 06M NPN Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 56M PNP 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 06M s1G Q62702-A3473 Package 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595	Original	VPW05980 Q62702-A3473 SCT-595 EHP00821 EHP00819 EHP00820 EHP00815 Jun-08-1998 Q62702-A3473 SCT-595	PDF
Q62702-A3474 Abstract: SCT-595 Contextual Info: SMBTA 56M PNP Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 06M NPN 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 56M s2G Q62702-A3474 Package 1 = B 2 = C 3 = E 4 n.c. 5 = C SCT-595	Original	VPW05980 Q62702-A3474 SCT-595 EHP00852 EHP00850 EHP00851 EHP00846 Q62702-A3474 SCT-595	PDF
SCT-595 Abstract: W331 marking E1 SCT-595 Contextual Info: BCP 70M PNP Silicon AF Power Transistor 4 For AF driver and output stages High collector current 5 Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking BCP 70M PBs Pin Configuration Package 1 = E1 2 = C 3 = E2 4 = B 5 = C SCT-595 Maximum Ratings E1 and E2 connected externaly	Original	VPW05980 SCT-595 Feb-02-2000 SCT-595 W331 marking E1 SCT-595	PDF
Contextual Info: 8 -3 2 U N C-2A DIM MILLIMETER A 5.71 H 1 1.52 26.16 J K L .38R 19.05 o 9.52 DIA 0.13 1.78 4.06 15.11 2.92 LD B C D E F G TOL INCHES .13 .13 .02 .13 .13 MAX .38 .225 .375 DIA .005 .070 .165 .595 .115 .005 .005 .001 .005 .005 MAX .015 .13 .38 5' .060 1.030	OCR Scan	55GT8R	PDF
2N6665 Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953 Contextual Info: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed	OCR Scan	SL42E05 M220S 0001fl11 2N6665 MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953	PDF
21E sot Abstract: IC 3263 1303 SOT23 Contextual Info: M an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • D esigned for 3-5 Volt O peration • U seable to 6 GHz in Oscillators • U seable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz	OCR Scan	MA4T3243 MA4T324335 21E sot IC 3263 1303 SOT23	PDF
MA42181-510 Abstract: 2N5054 2N6665-509 Contextual Info: M a n A M P icom pany General Purpose Low Noise Bipolar Transistors V3.00 Case Styles Features • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed	OCR Scan		PDF
Contextual Info: an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz	OCR Scan	MA4T3243 MA4T324335	PDF
sot23 1303 Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335 Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers	Original	MA4T3243 OT-23 MA4T324335 sot23 1303 IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335	PDF
TRANSISTOR K 1507 Contextual Info: Preliminary Specifications 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2.00 SOT-23 Features ● ● ● ● ● 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel Description The MA4T6310 series of low current, high fT silicon NPN	Original	MA4T6310 OT-23 MA4T631039 OT-143 MA4T631039 TRANSISTOR K 1507	PDF

MA4T636500 Abstract: MA4T6365 Contextual Info: M an A M P com pany Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • D esigned for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and	OCR Scan	MA4T6365 MA4T6365 OT-143 MA4T636539 MA4T636500	PDF
Contextual Info: VMÂCQM Preliminary Specifications m an AM P company 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V1.A SOT-23 Features • • • • • 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel	OCR Scan	MA4T6310 OT-23	PDF
MA4T636533 Abstract: transistor sot-23 2613 MA4T6365 Contextual Info: Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features ● ● ● ● ● ● Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and	Original	MA4T6365 MA4T6365 OT-143 MA4T636539 MA4T636533 transistor sot-23 2613	PDF
mount chip transistor 332 Abstract: SOT-23 TRANSISTOR 548 MA4T64500 Contextual Info: Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series MA4T645 Series Silicon Bipolar High fT Low Noise Microwave Transistors Features • • • • • • • Case Style fT to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available	Original	MA4T645 mount chip transistor 332 SOT-23 TRANSISTOR 548 MA4T64500	PDF
MA4TF50 Abstract: MA4TF5005 RS 434 071 x-band transistor transistor mesfet Contextual Info: General Purpose 0.5 µm N-Type GaAs MESFET Transistors MA4TF50 Series V3.00 Case Styles Features ● ● ● ● ● Low Noise Figure High Associated Gain High Maximum Available Gain Designed for Battery Operation Useful to Ku-Band Description The MA4TF50 is an n-type GaAs depletion mode Metal	Original	MA4TF50 MA4TF5005, MA4TF5000, MA4TF5005 MA4TF5005 RS 434 071 x-band transistor transistor mesfet	PDF
MA4T64500 Contextual Info: M an A M P com pany Silicon Bipolar High fT Low Noise Microwave Transistors MA4T645 V3.00 Case Styles Features • • • • • • fT to 9 GHz Low Noise Figure High A ssociated Gain Hermetic and Surface Mount Packages Available Can be Screened to JANTX, JANTXV Equivalent Levels	OCR Scan	MA4T645 MA4T645 MA4T64539 OT-143 MA4T64500	PDF
b 595 transistor Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335 Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor	Original	MA4T243 MA4T24300 b 595 transistor transistor 5 Amp 700 volt transistor b 595 MA4T24335	PDF
gs 069 0605 Abstract: MA4TF50 MA4TF5005 transistor mesfet x-band transistor Contextual Info: M a n A M P c o m p an y General Purpose 0.5 \|im N-Type GaAs MESFET Transistors MA4TF50 Series V3.00 Case Styles Features • • • • • Low Noise Figure High A ssociated Gain High Maximum Available Gain D esigned for Battery Operation Useful to Ku-Band	OCR Scan	MA4TF50 4TF5005, MA4TF5000, MA4TF5000 MA4TF5005 gs 069 0605 MA4TF5005 transistor mesfet x-band transistor	PDF
t636 Abstract: 557 sot143 T636 A S 223 858 015 636 Contextual Info: an A M P com pany Low Operating Voltage, High FT Bipoiar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and	OCR Scan	MA4T6365 MA4T6365 OT-143 MA4T636539 t636 557 sot143 T636 A S 223 858 015 636	PDF
TRANSISTOR K 1507 Contextual Info: Preliminary Specifications an A M P company 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2 .00 Features • • • • • SOT-23 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel	OCR Scan	MA4T6310 OT-23 TRANSISTOR K 1507	PDF

B 595 TRANSISTOR Search Results

B 595 TRANSISTOR Result Highlights (5)

B 595 TRANSISTOR Datasheets Context Search

TRANSISTOR S1d

NPN S2D

SCT-595

VPW05980

Q62702-A3473

Q62702-A3474

SCT-595

2N6665

21E sot

MA42181-510

sot23 1303

TRANSISTOR K 1507

MA4T636500

MA4T636533

mount chip transistor 332

MA4TF50

MA4T64500

b 595 transistor

gs 069 0605

t636

TRANSISTOR K 1507