B 557 PNP TRANSISTOR Search Results

B 557 PNP TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
2SA1943	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N

B 557 PNP TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BC557A Abstract: BC556B BC558B transistor BC 557B BC556 BC557 BC557C BC558 transistor BC 557 BC558 MOTOROLA Text: MOTOROLA Order this document by BC556/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC556,B PNP Silicon BC557A,B,C BC558B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Symbol BC 556 BC 557 BC 558 Unit Collector – Emitter Voltage VCEO –65 –45	Original	BC556/D BC556 BC557A BC558B BC556/D* BC556B BC558B transistor BC 557B BC557 BC557C BC558 transistor BC 557 BC558 MOTOROLA	PDF
transistor BC 557B Abstract: BC557A BC556B BC557 MOTOROLA BC557C 557B BC557/558 BC 557 PNP TRANSISTOR circuits operation of BC557 TRANSISTOR pin out TRANSISTOR bc557 Text: MOTOROLA Order this document by BC556/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC556,B PNP Silicon BC557A,B,C BC558B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Symbol BC 556 BC 557 BC 558 Unit Collector – Emitter Voltage VCEO –65 –45	Original	BC556/D BC556 BC557A BC558B BC556/D* transistor BC 557B BC556B BC557 MOTOROLA BC557C 557B BC557/558 BC 557 PNP TRANSISTOR circuits operation of BC557 TRANSISTOR pin out TRANSISTOR bc557	PDF
BC5578 Abstract: transistor Bc 557 transistor bc557 pins details information of BC558 transistor bc 557 datasheet transistor bc 558 pnp BC557 equivalent transistor bc 556 datasheet C 557 transistor bc 558 application Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC 556, A, B BC 557, 8, A, B, C TO-92 EBC APPLICATION PNP General Purpose Transistors, Especially Suited For Use in Driver Stages of Audio	Original	BC556 C-120 BC5578 transistor Bc 557 transistor bc557 pins details information of BC558 transistor bc 557 datasheet transistor bc 558 pnp BC557 equivalent transistor bc 556 datasheet C 557 transistor bc 558 application	PDF
TRANSISTOR C 557 B Abstract: operation of BC557 TRANSISTOR TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR transistor 557 b free BC557 transistor bc558 features of pnp transistor BC557 transistor c 557 transistor c 558 Text: UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 Lead-free: BC556L/BC557L/BC558L Halogen-free:BC556G/BC557G/BC558G ORDERING INFORMATION Normal BC556-x-T92-B	Original	BC556/557/558 BC556, BC556L/BC557L/BC558L BC556G/BC557G/BC558G BC556-x-T92-B BC556-x-T92-K BC557-x-T92-B BC557-x-T92-K BC558-x-T92-B BC558-x-T92-K TRANSISTOR C 557 B operation of BC557 TRANSISTOR TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR transistor 557 b free BC557 transistor bc558 features of pnp transistor BC557 transistor c 557 transistor c 558	PDF
bc557 Abstract: BC557A BC557 MOTOROLA transistor BC 557B bc556b bc556 motorola BC 557 PNP TRANSISTOR circuits BC556 BC557C BC558B Text: MOTOROLA Order this document by BC556/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC556,B PNP Silicon BC557A,B,C BC558B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Symbol BC 556 BC 557 BC 558 Unit Collector – Emitter Voltage VCEO –65 –45	Original	BC556/D BC556 BC557A BC558B BC556/D* bc557 BC557 MOTOROLA transistor BC 557B bc556b bc556 motorola BC 557 PNP TRANSISTOR circuits BC557C BC558B	PDF
BC557A Abstract: BC557 MOTOROLA BC558B BC 557 PNP TRANSISTOR circuits BC558 motorola bc556b transistor BC 557B Text: MOTOROLA Order this document by BC556/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC556,B PNP Silicon BC557A,B,C BC558B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Symbol BC 556 BC 557 BC 558 Unit Collector – Emitter Voltage VCEO –65 –45	Original	BC556/D BC556 BC557A BC558B 226AA) BC558 BC558ZL1 O-226) \\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000817\08162000 BC557 MOTOROLA BC558B BC 557 PNP TRANSISTOR circuits BC558 motorola bc556b transistor BC 557B	PDF
operation of BC557 TRANSISTOR Abstract: TRANSISTOR C 557 B transistor c 557 BC557 SWITCHING TRANSISTOR transistor 557 b of pnp transistor BC557 B 557 PNP TRANSISTOR transistor bc558 features free BC557 TRANSISTOR 557 Text: UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 ORDERING INFORMATION Normal BC556-x-T92-B BC556-x-T92-K BC557-x-T92-B BC557-x-T92-K BC558-x-T92-B	Original	BC556/557/558 BC556, BC556-x-T92-B BC556-x-T92-K BC557-x-T92-B BC557-x-T92-K BC558-x-T92-B BC558-x-T92-K BC556L-x-T92-B BC556L-x-T92-K operation of BC557 TRANSISTOR TRANSISTOR C 557 B transistor c 557 BC557 SWITCHING TRANSISTOR transistor 557 b of pnp transistor BC557 B 557 PNP TRANSISTOR transistor bc558 features free BC557 TRANSISTOR 557	PDF
APPLICATION OF BC548 transistor Abstract: BC547 BC548 BC548 B 001 BC548 pnp transistor bc547 pnp transistor bc547 features pnp bc547 transistor BC546 for bc548 npn transistor Text: SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES ᴌHigh Voltage : BC546 VCEO=65V. ᴌFor Complementary With PNP Type BC556/557/558. N E K G J D MAXIMUM RATING Ta=25ᴱ	Original	BC546/7/8 BC546 BC556/557/558. BC547 BC548 BC546 APPLICATION OF BC548 transistor BC547 BC548 BC548 B 001 BC548 pnp transistor bc547 pnp transistor bc547 features pnp bc547 transistor for bc548 npn transistor	PDF
BC5578 Abstract: BC556-558 BC556 BC557 BC558 T1 BC558 Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC 556, A, B BC 557, 8, A, B, C TO-92 EBC Boca Semiconductor Corp.	Original	BC556 BC5578 BC556-558 BC556 BC557 BC558 T1 BC558	PDF
APPLICATION OF BC548 transistor Abstract: bc547 pnp BC547 BC548 pnp transistor pnp bc547 transistor bc548 pnp BC548 BC548 TRANSISTOR BC546 for bc548 npn transistor Text: SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES ・High Voltage : BC546 VCEO=65V. ・For Complementary With PNP Type BC556/557/558. N E K G J D MAXIMUM RATING Ta=25℃	Original	BC546/7/8 BC546 BC556/557/558. BC547 BC548 BC546 100MHz APPLICATION OF BC548 transistor bc547 pnp BC547 BC548 pnp transistor pnp bc547 transistor bc548 pnp BC548 BC548 TRANSISTOR for bc548 npn transistor	PDF
TRANSISTOR C 557 B Abstract: transistor c 557 B 557 PNP TRANSISTOR transistor 557 b Transistor Bc556 bc556 transistor transistor c 558 ic 558 of pnp transistor BC557 PNP BC558 Text: UTC BC556/557/558 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL Collector-base voltage	Original	BC556/557/558 BC556, BC556 BC557 BC558 QW-R201-051 TRANSISTOR C 557 B transistor c 557 B 557 PNP TRANSISTOR transistor 557 b Transistor Bc556 bc556 transistor transistor c 558 ic 558 of pnp transistor BC557 PNP BC558	PDF
transistor c 557 Abstract: TRANSISTOR C 557 B B 560 PNP TRANSISTOR transistor B 560 transistor c 558 TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR Text: BC556/557/558/559/560 PNP Epitaxial Silicon Transistor Features • Switching and Amplifier • High Voltage: BC556, VCEO = -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings	Original	BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor c 557 TRANSISTOR C 557 B B 560 PNP TRANSISTOR transistor B 560 transistor c 558 TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR	PDF
BC557 Abstract: transistor marking bc557 BC557BTA BC557 TRANSISTOR application BC557BTF information of BC557 Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 BC557 transistor marking bc557 BC557BTA BC557 TRANSISTOR application BC557BTF information of BC557	PDF
of transistor bc558 Abstract: bc558 transistor BC 458 transistor bc558 features information of BC558 TRANSISTOR C 557 B BC558TAR bc560 Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 of transistor bc558 bc558 transistor BC 458 transistor bc558 features information of BC558 TRANSISTOR C 557 B BC558TAR bc560	PDF

2SB1557 Abstract: 2SD2386 Text: TO SH IBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX High Breakdown Voltage : VcEO = —140 V (Min.) Complementary to 2SD2386 3.2 ±0.2 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SB1557 2SD2386 2SB1557	PDF
Untitled Abstract: No abstract text available Text: 2SB1557 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2386 ¿ 3 .2 ±0.2 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SB1557 2SD2386	PDF
2SB1557 Abstract: 2SD2386 Text: TO SH IBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 03.2 ±0.2 1 5.9 M A X . High Breakdown Voltage : VcEO = —140 V (Min.) Complementary to 2SD2386 MAXIMUM RATINGS (Tc = 25°C)	OCR Scan	2SB1557 2SD2386 2SB1557	PDF
BC 247 b transistor Abstract: C558B transistor BC 247 transistor BC 245 bc 558 equivalent bc560 bc556b equivalent BC 247 Transistor - BC 547, CL 100 transistor 557 b Text: - 25C D • Ô235b05 O O O m ^ b □ H S I E 6 - Q PNPSiliconTransistors B C 5 5 6 -B C 5 6 0 ' SIEMENS AKTIENGESELLSCHAF- 2 % - 2 . 1 for AF input and driver stages BC 556, BC 557, BC 558, BC 559, and BC 560 are epitaxial PNP silicon Planartransistors in	OCR Scan	235b05 BC556' BC556VI BC556A BC556B BC5571 BC557VI BC557A BC557B BC5581 BC 247 b transistor C558B transistor BC 247 transistor BC 245 bc 558 equivalent bc560 bc556b equivalent BC 247 Transistor - BC 547, CL 100 transistor 557 b	PDF
transistor BC 667 Abstract: transistor BC 247 transistor BC 245 TRANSISTOR bc 657 BC 667 bc667 transistor bc 658 transistor BC 567 transistor BC 660 BC 247 Text: - asc î • öE35bG5 o o o m ^ b a « s i e û - D PNPSiliconTransistors B C 5 5 6 -B C 5 6 0 SIEMENS AKTIEN6ESELLSCHAF- f"-2$ - 2./ ' for AF input and driver stages BC 556, BC 557, BC 558, BC 559, and BC 560 are epitaxial PNP silicon Planartransistors in	OCR Scan	235b05 BC556-BC560 BC5561' Q62702-C692 BC556VI Q62702-C692-V3 BC556A Q62702-C692-V1 BC556B Q62702-C692-V2 transistor BC 667 transistor BC 247 transistor BC 245 TRANSISTOR bc 657 BC 667 bc667 transistor bc 658 transistor BC 567 transistor BC 660 BC 247	PDF
BC557 Abstract: TRANSISTOR C 557 B transistor BC557 base collector emitter bc558 transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC Text: MCC TO-92 P lastic-E n capsu late T ran sisto rs BC556,B/BC557,A,B,C/BC558,B TRANSISTOR PNP FEATU RES dissipation 0.6 2 5 W (T am b=25'C ) Pcm : current IcM : -0.1 A BC 556 : -80 V V cbo; BC 557 : -50V BC 558 : -30 V storage junction temperature range Tj.Tstg: -5 5 ° C to + 150°C	OCR Scan	BC556 B/BC557 C/BC558 BC557 BC558 BC556 BC558 TRANSISTOR C 557 B transistor BC557 base collector emitter transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC	PDF
TOSHIBA Transistor Silicon PNP Epitaxial Type Abstract: 2SB1557 2SD2386 Text: 2SB1557 TOSHIBA TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE D ARLING TO N POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 3.2 ± 0 .2 15.9M AX High Breakdown Voltage : VcEO = —140V (Min.) Complementary to 2SD2386 M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SB1557 --140V 2SD2386 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1557	PDF
transistor B 560 Abstract: BC 557 PNP TRANSISTOR transistor bc 558 pnp TRANSISTOR C 557 B transistor c 557 transistor bc 557 c le transistor 557 b B 557 PNP TRANSISTOR TRANSISTOR 557 TRANSISTOR BC 560 Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER • HIGH VO LTAG E: BC556, V CEo = -65V • LO W NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase C apacitance	OCR Scan	BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor B 560 BC 557 PNP TRANSISTOR transistor bc 558 pnp TRANSISTOR C 557 B transistor c 557 transistor bc 557 c le transistor 557 b B 557 PNP TRANSISTOR TRANSISTOR 557 TRANSISTOR BC 560	PDF
Untitled Abstract: No abstract text available Text: SYMSEMI SEMICONDUCTOR T O -92 Plastic Encapsulate Transistors BC 556 ,A ,B ,C BC 557 , B BC 558 , B TRANSISTOR PNP TO — 92 f1 — q> ei s j FEATURES Power d is s ip a tio n Pcm : 0.625 W (Tamb=25 °C) C o lle c to r c u rre n t I cm : “0. 1 A C o lle c to r base v o lta g e	OCR Scan	BC558 BC556 270TYP 050TYP	PDF
transistor bc 488 Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B Text: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .	OCR Scan	BCW94 BC317P. transistor bc 488 transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B	PDF

B 557 PNP TRANSISTOR Search Results

B 557 PNP TRANSISTOR Result Highlights (5)

B 557 PNP TRANSISTOR Datasheets Context Search

BC557A

transistor BC 557B

BC5578

TRANSISTOR C 557 B

bc557

BC557A

operation of BC557 TRANSISTOR

APPLICATION OF BC548 transistor

BC5578

APPLICATION OF BC548 transistor

TRANSISTOR C 557 B

transistor c 557

BC557

of transistor bc558

2SB1557

Untitled

2SB1557

BC 247 b transistor

transistor BC 667

BC557

TOSHIBA Transistor Silicon PNP Epitaxial Type

transistor B 560

Untitled

transistor bc 488