Untitled
Abstract: No abstract text available
Text: 2N4261UBC Compliant PNP Small Signal Silicon Transistor Qualified Levels: JANS Qualified per MIL-PRF-19500/511 DESCRIPTION This 2N4261UBC small signal transistor features ceramic bodied construction with a ceramic lid for military grade products per MIL-PRF-19500/511. It is also available with the standard
|
Original
|
PDF
|
2N4261UBC
MIL-PRF-19500/511
2N4261UBC
MIL-PRF-19500/511.
2N4261
T4-LDS-0150-2,
|
Untitled
Abstract: No abstract text available
Text: 2N4261UB Compliant available PNP Small Signal Silicon Transistor Qualified per MIL-PRF-19500/511 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N4261UB small signal transistor features ceramic bodied construction with a metal lid for military grade products per MIL-PRF-19500/511. It is also available with a ceramic lid in the
|
Original
|
PDF
|
2N4261UB
MIL-PRF-19500/511
2N4261UB
MIL-PRF-19500/511.
2N4261
T4-LDS-0150-1,
|
BF512
Abstract: Transistors specification with hybrid marking code 513 BF510 BF511 BF513
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel silicon field-effect transistors
|
Original
|
PDF
|
BF510
BF510)
BF511)
BF512)
BF512
Transistors specification with hybrid
marking code 513
BF511
BF513
|
TBA311
Abstract: TCA511 TCA 420 s0212 vertical section horizontal section of tv and the block diagram transistor horizontal section tv s0214
Text: TCA 511 LINEAR INTEGRATED CIRCUIT TV HORIZONTAL AND VERTICAL PROCESSOR The TCA 511 is a silico n m on olithic integrated circ u it in a 16-lead dual in -lin e plastic package. It incorporates the follow ing fun ctions: high sta b ility horizontal oscilla to r,
|
OCR Scan
|
PDF
|
16-lead
TBA311
TCA511
TCA 420
s0212
vertical section
horizontal section of tv and the block diagram
transistor horizontal section tv
s0214
|
RUR30100
Abstract: rur30100 Diode 30a 1000v RUR3070 RUR3080 RUR3090 VRWM-700V
Text: RUR3070/30Q0, B U R 3090/30100 HARRIS HARRIS SEMICOND SECTOR 5bE D • 43D2271 00423^5 511 I HAS May 1992 Features 30A Ultrafast Diode With Soft Recovery Characteristic Package 3 - / 7 T0-220AC • Ultrafast with Soft Recovery Characteristic {tfr < 110ns
|
OCR Scan
|
PDF
|
43D2571
110ns)
RUR3070,
RUR3080,
RUR3090,
RUR30100
RUR3080.
RUR3090RUR30100
rur30100 Diode
30a 1000v
RUR3070
RUR3080
RUR3090
VRWM-700V
|
NE511B
Abstract: SE511B SE511R NE511r ne511 monolithic amplifier 11
Text: BignDtiGS DUAL DIFFERENTIAL AMPLIFIER LINEAR INTEGRATED CIRCUITS PIN CONFIGURATIONS_ DESCRIPTION T he 511 is a m onolithic dual high frequency differential amplifier with associated constant current source transistors B PACKAG E T op V iew and biasing diode. It is useful from D C to 1 00 M H z. The
|
OCR Scan
|
PDF
|
|
1rf510
Abstract: 1RF51
Text: • M3DE271 0DS3Tfl3 g H A R R IS ÖÖO ■ HAS IRF510/511/512/513 IRF51OR/511R/512R/513R N-Channel Power MOSFETs Avalanche Energy Rated* August 19 91 Package Features • T 0 -2 2 0 A B 4.9A and 5.6A, 80V - 100V TOP VIEW • rD S °n) = 0 -5 4 0 and 0 .7 4 ÎÏ
|
OCR Scan
|
PDF
|
M3DE271
IRF510/511/512/513
IRF51OR/511R/512R/513R
IRF510,
IRF511,
IRF512,
IRF513
IRF510R,
IRF511R,
IRF512R
1rf510
1RF51
|
1RF511
Abstract: IRFS10 IRF 4020 1RF510 IRF 511 MOSfet Irf510 mosfet circuit diagram 1rf510 n-channel IRF511 LS 2512 04 IRF51
Text: IRF510/511/512/513 IRF51 OR/511R/512R/513R S3 HARRIS N-Channei Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -22 0 A B • 4.9A and 5.6A , 8 0 V - 10 0V TOP VIEW • fD S ion = 0 .5 4 0 and 0 .7 4 fl DRAIN • S ingle Pulse Avalanche E nergy R ated*
|
OCR Scan
|
PDF
|
IRF510/511/512/513
IRF510R/511R/512R/513R
IRFS10,
IRF511,
IRF512,
IRF513
IRF510R,
1RF511R,
IRF512R
IRF513R
1RF511
IRFS10
IRF 4020
1RF510
IRF 511 MOSfet
Irf510 mosfet circuit diagram
1rf510 n-channel
IRF511
LS 2512 04
IRF51
|
S321RDB
Abstract: s 316 hwb S321HWB S315GWA 7 segment cc S511GWA infra red 11 pin 7 segment LED pin configuration s322 10NOPIN
Text: EVERLIGHT ELECTRONICS • BM D 3 M 15703 I ■ INFRA RED/SUPER-INFRARED LEDS J / - ^ j 00G D 002 3 ■ EVEC LED INDICATOR LAMPS 1 SILICON PIN PHOTODIODES PHOTO TRANSISTORS | 50 30 G IB f Jjîl jjfty “ ■ fl t 3 PT 331 C PT 202 C 7 - SEGMENT DIGIT DISPLAYS
|
OCR Scan
|
PDF
|
3M15703
S315GWA
S321RDB
s 316 hwb
S321HWB
S315GWA
7 segment cc
S511GWA
infra red
11 pin 7 segment LED pin configuration
s322
10NOPIN
|
2N6665
Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
Text: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed
|
OCR Scan
|
PDF
|
SL42E05
M220S
0001fl11
2N6665
MA42001-509
2N6665-509
MA42181-510
2n5054
RF NPN POWER TRANSISTOR C 10-50 GHZ
2N2857 Model
MA42001
ma42 transistor
2N3953
|
transistor K 2056
Abstract: MA42120 K 2056 transistor 2N6665 MA42001-509 2N5054 2n5651 MA42005 MA-42120 2N2857 Model
Text: /yfaom Silicon Low Noise Bipolar T ransistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz
|
OCR Scan
|
PDF
|
|
MA42181-510
Abstract: 2N5054 2N6665-509
Text: M a n A M P icom pany General Purpose Low Noise Bipolar Transistors V3.00 Case Styles Features • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed
|
OCR Scan
|
PDF
|
|
FCD830
Abstract: B 511 transistor diode 513 FCD810C FCD810D FCD820B FCD820C FCD825A FCD825D FCD830A
Text: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>
|
OCR Scan
|
PDF
|
FCD810B<
FCD810CÂ
FCD810DÂ
FCD820B
FCD820CÂ
FCD82Saturation
FCD830,
FCD830
B 511 transistor
diode 513
FCD810C
FCD810D
FCD820C
FCD825A
FCD825D
FCD830A
|
FCD830C
Abstract: FCD810C FCD810D FCD820B FCD820C FCD825A FCD825D FCD830 FCD830A FCD830B
Text: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>
|
OCR Scan
|
PDF
|
FCD810B<
FCD810CÂ
FCD810DÂ
FCD820B
FCD820CÂ
FCD82Saturation
FCD830,
FCD830C
FCD810C
FCD810D
FCD820C
FCD825A
FCD825D
FCD830
FCD830A
FCD830B
|
|
|
MA42056
Abstract: 42056
Text: Silicon Low Noise Bipolar Transistors MA42050 Series Description Nominal fT - 1.8 GHz Nominal Current Range - 1 to 5 mA Iq Max. - 40 mA Frequency Range - 10 MHz to 600 GHz Geometry - 55 The MA42050 series of NPN silicon planar transistors will give high gain and low noise figure characteristics in VHF
|
OCR Scan
|
PDF
|
MA42050
MA42051
MA42052
MA42056
11unless
MIL-STD-750
42056
|
BF512
Abstract: BF510 marking code 513
Text: Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and
|
OCR Scan
|
PDF
|
BF510)
BF511)
BF512)
BF513)
BF510
BF511
BF512
BF513
BF510
MAM33S
BF512
marking code 513
|
B 511 transistor
Abstract: FCD810C FCD810D FCD820B FCD820C FCD825 FCD825A FCD825D FCD830 FCD830A
Text: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>
|
OCR Scan
|
PDF
|
FCD810B<
FCD810CÂ
FCD810DÂ
FCD820B
FCD820CÂ
FCD820
B 511 transistor
FCD810C
FCD810D
FCD820C
FCD825
FCD825A
FCD825D
FCD830
FCD830A
|
Untitled
Abstract: No abstract text available
Text: BF510 to 513 _ J \_ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special
|
OCR Scan
|
PDF
|
BF510
BF510)
BF511)
BF512)
BF513)
BF511;
BF512
BF513;
|
marking code 513
Abstract: BF510 BF512 BF511 BF513 7Z96B8S
Text: • fafaS3*ï31 N AMER □Q2Mb21 7TD H A P X PHILIPS/DISCRETE b?E BF510 to 513 D A_ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special
|
OCR Scan
|
PDF
|
0G24L21
BF510
BF510)
BF511)
BF512)
BF513)
7z74942a
CI02Mti2S
marking code 513
BF512
BF511
BF513
7Z96B8S
|
FCD810
Abstract: FCD810C FCD810D FCD820B FCD820C FCD825A FCD825D FCD830 FCD830A FCD830C
Text: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>
|
OCR Scan
|
PDF
|
FCD810B<
FCD810CÂ
FCD810DÂ
FCD820B
FCD820CÂ
FCD82he
FCD810
FCD810C
FCD810D
FCD820C
FCD825A
FCD825D
FCD830
FCD830A
FCD830C
|
FCD820D
Abstract: FCD820B FCD820 FCD810C FCD810D FCD820C FCD825A FCD825D FCD830 FCD830A
Text: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>
|
OCR Scan
|
PDF
|
FCD810B<
FCD810CÂ
FCD810DÂ
FCD820B
FCD820CÂ
FCD82t
FCD820
FCD820D
FCD810C
FCD810D
FCD820C
FCD825A
FCD825D
FCD830
FCD830A
|
Untitled
Abstract: No abstract text available
Text: Silicon Low Noise Bipolar Transistor MA42140 Series Description Nominal fT - 4.5 GHz Nominal Current Range - 1 to 10 mA Iq Max. - 50 mA Frequency Range - 300 MHz to 2.0 GHz Geometry - 63 The MA42140 series of NPN silicon planar transistors features excellent high frequency current gain at medium
|
OCR Scan
|
PDF
|
MA42140
MA42141
MA42142
MA42143
2N5651
2N5662
MIL-STD-750
|
a935
Abstract: transistor a935 a935 transistor 2SK2157 7824 5A oasis T460 MEI-603
Text: "r N E C — • is — h r ^ MOS Field Effect Transistor 2 S K 2 1 5 7 MOS FET 2SK2157liN9l -V7-JI'«i MOSFETT, 5 V ® S * IC ® tH * • y ?> 7 m ?T T * < X -f y *>, 4 t m m m $ L : mm) * m s ,m > 5.7 ± 0.1 fc &b, 7 " 7 3- n . 2 . — 1.5 ± 0.1 DC/DCu > / < - * £ ¿ilC®3ii-?To
|
OCR Scan
|
PDF
|
2SK2157
2SK2157liN9l
a935
transistor a935
a935 transistor
2SK2157
7824 5A
oasis
T460
MEI-603
|
Halbleiterbauelemente DDR
Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
Text: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der
|
OCR Scan
|
PDF
|
|
