B 342 D TRANSISTOR Search Results

transistor 342 G

Abstract: buz 342 G C67078-S3135-A2 transistor 342 pf buz 342 transistor
Contextual Info: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω

Contextual Info: BUZ 342 Infine on t*c h o ologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated •d v /d / rated 1 VPT051SB 2 J • Ultra low on-resistance • 175"C operating temperature D G Type BUZ 342 h Vds 60 A 50 V f lDS on 0.01 n

C67078-S3135-A2

Abstract: transistor 342 G BUZ342
Contextual Info: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175˚C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω

buz 342 G

Abstract: transistor 342 G transistor 342 pf buz 342 transistor FR 220 ph c5 diode siemens fog
Contextual Info: SIEMENS BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/df rated • Ultra low on-resistance • 175°C operating temperature Type BUZ 342 Vds 50 V h 60 A flbS on Package Ordering Code 0.01 Q TO-218 AA C67078-S3135-A2

GA200SA60SP

Abstract: GA200SA60S
Contextual Info: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

CGC SWITCH

Abstract: transistor 342 pf GA200SA60SP
Contextual Info: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

b342d

Abstract: information applikation applikation heft mikroelektronik Heft 12 information applikation mikroelektronik Transistoren DDR VEB mikroelektronik "information applikation" mikroelektronik Heft 10 ITT transistoren
Contextual Info: m n t k if ^ s j e le lK t e n a r iH - c g|B Information Applikation in n f B = a n iis ö lH W b n a n lK Information Applikation Heft: 28 Transistorarrays Iweb Halbleiterwerk frankfurt/oder | betrieb im veto kombinet mikroelektronik KAMMER DER TECHNIK Bezirksvorstand Frankfurt/O.

Contextual Info: Medium Power Bipolar Transistors -i : . ,*&• M l VCE Pm dBM TYP (dBM) VCE (V) fc <mA> (V) (mA) Mm m. / -fr:.; λ TYP 'rrtifria' (dB) r. JH H S L 2.0 12.5 100 19 27 10 100 9.8 5.5 100 NE46134 1.0 . 12.5 100 20.5 27.5 10 50 9 5.5 100 ] 250 NE461M02 1.0

NE68018

Abstract: 814T
Contextual Info: Medium Power Bipolar Transistors Pide MAQ fr I TEST Hfe Fax on dBM TYP (dBM) NE46100 2.0 12.5 100 19 27 10 100 9.8 5.5 100 250 Chip 00 D 314 NE46134 1.0 12.5 100 20.5 27.5 10 50 9 5.5 100 250 SOT-89 34 D 314 NE85634 1.0 10 40 13 22 10 40 11 6.5 120 100 SOT-89

ep 1387

Abstract: 2SA738 2SA681 2SA682 i705 2SA683 2SC1361
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SC793

Abstract: 2SC633A 2SA653 2SC1060 C633A 138B 2SC1061 2SC1213 2SC519 2SC520
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

318F

Abstract: AN569 MMBT2131T1
Contextual Info: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value

Contextual Info: MOTOROLA Order this document by MMBT2131T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2131T1 MMBT2131T3 Product Preview General Purpose Transistors PNP Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.

Contextual Info: MOTOROLA Order this document by MMBT2132T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2132T1 MMBT2132T3 Product Preview General Purpose Transistors NPN Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (T q = 25°C unless otherwise noted)

bipolar junction transistor

Abstract: motorola an569 thermal MOTOROLA TRANSISTOR 318F AN569 MMBT2131T1 MMBT2131T3 AN569 in Motorola Power Applications
Contextual Info: MOTOROLA Order this document by MMBT2131T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2131T1 MMBT2131T3 Product Preview General Purpose Transistors PNP Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.

318F

Abstract: AN569 MMBT2131T1 MMBT2131T3
Contextual Info: ON Semiconductort MMBT2131T1 MMBT2131T3 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS – V(BR)CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

318F

Abstract: AN569 MMBT2132T1 MMBT2132T3 318F-03
Contextual Info: ON Semiconductort MMBT2132T1 MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS – V BR CEO 342 mW (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating 6 Symbol Value

MOTOROLA TRANSISTOR T2

Abstract: motorola an569 thermal motorola an569 MOTOROLA TRANSISTOR TRANSISTOR MOTOROLA 318F AN569 MMBT2132T1 MMBT2132T3
Contextual Info: MOTOROLA Order this document by MMBT2132T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2132T1 MMBT2132T3 Product Preview General Purpose Transistors NPN Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Contextual Info: M O T O R O L A S C O I O D E S / O P T O J " 3 4 6367255 MOTOROLA SC D È T | 3 k b ? E S 34c DIODES/OPTO S □ □ 3 7 T b t . 37966 fi D 7 “'< 3 3 " O f SILICON POWER TRANSISTOR DICE (continued) MJEC13009 DIE NO. — NPN LINE SOURCE — PL500.E586

TRANSISTOR BIPOLAR 400V 20A

Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
Contextual Info: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .

318F

Abstract: AN569 MMBT2131T1
Contextual Info: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value

Contextual Info: MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor http://onsemi.com Features • Pb−Free Package is Available 0.7 AMPS 30 VOLTS − V BR CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage

ilpi 215

Abstract: C1 1OOUF ilc 150 eth transistor k41 brush dc motor control 200v 20a h-bridge igbt pwm k3900 82340 ilpi -115 transistor k42
Contextual Info: □OB' PWR-82340 and PWR-82342 ILC DATA DEVICE CORPORATION _ SMART POWER H-BRIDGE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82340 and PWR-82342 are 30A H-bridge motor drive hybrids. The PWR-82340 has a 200V rating and uses MOSFETs in the output stage while the

AN569

Abstract: MMBT2131T1 MMBT2131T1G 318F
Contextual Info: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS − V(BR)CEO 342 mW Features • Pb−Free Package is Available