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    B 1038 SUPERIOR Search Results

    B 1038 SUPERIOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    iW3662-01-QFN5 Renesas Electronics Corporation Low Voltage SSL LED Driver for MR16 Applications Offers Universal Transformer Compatibility and Superior Dimmer Compatibility Visit Renesas Electronics Corporation
    iW3662-00-QFN5 Renesas Electronics Corporation Low Voltage SSL LED Driver for MR16 Applications Offers Universal Transformer Compatibility and Superior Dimmer Compatibility Visit Renesas Electronics Corporation
    ADC1038CIWM Rochester Electronics LLC ADC, Successive Approximation, 10-Bit, 1 Func, 8 Channel, Serial Access, PDSO20, SOP-20 Visit Rochester Electronics LLC Buy
    MSS1038-105KLC Coilcraft Inc General Purpose Inductor, 1000uH, 10%, 1 Element, Ferrite-Core, SMD, 4039, ROHS COMPLIANT Visit Coilcraft Inc
    MSS1038-152NLB Coilcraft Inc General Purpose Inductor, 1.5uH, 30%, 1 Element, Ferrite-Core, SMD, 4039, ROHS COMPLIANT Visit Coilcraft Inc

    B 1038 SUPERIOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MADP-007224-01072T

    Abstract: MADP-007224-01072
    Text: MADP-007224-01072T Non Magnetic MELF PIN Diode Features Rectangular MELF SMQ Hermetically Sealed Low Loss Low Distortion High Isolation Passivated PIN Diode Chips Full Face Bonds Ultra Low Non-Magnetic Packages Suitable for MRI Applications • High Power Handling Capability


    Original     		PDF MADP-007224-01072T MADP-007224-01072T 100mA MADP-007224-01072 100VDC 100MHz MADP-007224-01072

    TL139

    Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
    Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PDF PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145

    atc200b104kw50

    Abstract: TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147
    Text: PTFB183404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PDF PTFB183404F PTFB183404F 340-watt atc200b104kw50 TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147

    TL139

    Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PDF PTFB183404E PTFB183404F PTFB183404F 340-watt H-36275-8 H-37275-6/2 TL139 TL205 PTFB183404 transistor TL131

    HFBR-1414 receiver application notes

    Abstract: hp HFBR-1414 application notes Driver circuit hfbr-2412 HFBR-0400 HFBR-0414 HFBR-0416 HFBR-14X2 HFBR-14X4 HFBR-24X6 log RX2 1040
    Text: Low Cost, Miniature Fiber Optic Components with ST , SMA, SC and FC Ports Technical Data HFBR-0400 Series Features Applications • Meets IEEE 802.3 Ethernet and 802.5 Token Ring Standards • Low Cost Transmitters and Receivers • Choice of ST®, SMA, SC or


    Original     		PDF HFBR-0400 Reliabil0400 MIL-STD-883 HFBR-1414 receiver application notes hp HFBR-1414 application notes Driver circuit hfbr-2412 HFBR-0414 HFBR-0416 HFBR-14X2 HFBR-14X4 HFBR-24X6 log RX2 1040

    ultem 1010

    Abstract: hp HFBR-1414 application notes SMA-905 drawing HFBR-1414T HFBR-2414 pt100 schematic HFBR-2416 receiver application notes HFBR-0416 HFBR 04X0 HFBR-1414 receiver application notes
    Text: Low Cost, Miniature Fiber Optic Components with ST , SMA, SC and FC Ports Technical Data HFBR-0400 Series Features Applications • Meets IEEE 802.3 Ethernet and 802.5 Token Ring Standards • Low Cost Transmitters and Receivers • Choice of ST®, SMA, SC or


    Original     		PDF HFBR-0400 Reliabil0400 MIL-STD-883 ultem 1010 hp HFBR-1414 application notes SMA-905 drawing HFBR-1414T HFBR-2414 pt100 schematic HFBR-2416 receiver application notes HFBR-0416 HFBR 04X0 HFBR-1414 receiver application notes

    TL172

    Abstract: TL170
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications


    Original     		PDF PTFB183404E PTFB183404F PTFB183404E PTFB183404F 340-watt H-37275-6/2 TL172 TL170

    Mosfet

    Abstract: SSPL2015
    Text: SSPL2015 200V N-Channel MOSFET Main Product Characteristics VDSS 200V RDS on 0.13ohm(typ.) ID 18A ① TO - 220 Schematic Diagram Marking and Pin Assignment Features and Benefits   Advanced Process Technology Special designed for PWM, load switching and


    Original     		PDF SSPL2015 13ohm O-220 to175 Mosfet SSPL2015

    walkie talkie circuit diagram

    Abstract: Telemecanique XS1 walkie talkie circuit diagram using op amp XS2D12PA140D simple walkie talkie circuit diagram xs1-d08pa140 XSA-V11801 TF Telemecanique xsc TSX NANO CABLE XS8E1A1PAL01M12
    Text: Proximity Sensors x File 9006 CONTENTS Schneider Electric Brands Description Page Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 Auto-adaptable and Standard Flat Inductive Proximity Sensor . . . . . . . . . . . . . . . 206


    Original     		PDF 5-4-199X) LR46094 LR44087 E39291 E39281 walkie talkie circuit diagram Telemecanique XS1 walkie talkie circuit diagram using op amp XS2D12PA140D simple walkie talkie circuit diagram xs1-d08pa140 XSA-V11801 TF Telemecanique xsc TSX NANO CABLE XS8E1A1PAL01M12

    MAPK3000

    Abstract: No abstract text available
    Text: 2000 Volt and 3000 Volt PIN Diodes MA4PK2000, 3000 KILOVOLT Series V3.00 Features ● ● ● ● ● ● ● Voltage Ratings to 3000 Volts 25 Ampere Current Rating Designed for HF, Multi-Kilowatt Switches Low Loss, Low Distortion Design Rugged, Hermetically Sealed Packaging


    Original     		PDF MA4PK2000, carrier02 MAPK3000

    TCXO mtbf

    Abstract: transistor c333 AN-932 MIL-PRF-55310 spec OS-68338 DOC200103 radiation cots cmos B A date sheet 2011 VECTRON 2501 manufacturer list cots radiation
    Text: REV B DESCRIPTION DATE 7/1/08 CO-11365 PREP SM APPD HW VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY S. Murphy 6/19/08 Specification, Hybrid TCXO QUALITY R. Smith 6/19/08 Hi-Rel Standard ENGINEERING H. Wilson 6/19/08 CODE IDENT NO SIZE


    Original     		PDF CO-11365 DOC200103 M55342) M55342 TCXO mtbf transistor c333 AN-932 MIL-PRF-55310 spec OS-68338 DOC200103 radiation cots cmos B A date sheet 2011 VECTRON 2501 manufacturer list cots radiation

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.


    Original     		PDF PTFB183408SV PTFB183408SV 340-watt

    DOC200103

    Abstract: transistor c331 transistor c333 bipolar cots radiation HT-67849 MIL-PRF-55310 OS-68338 MIL-PRF-55310 spec TCXO mtbf M55365
    Text: REV C DESCRIPTION DATE 7/15/09 CO-15263 PREP SM APPD HW VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY S. Murphy 6/19/08 Specification, Hybrid TCXO QUALITY R. Smith 6/19/08 Hi-Rel Standard ENGINEERING H. Wilson 6/19/08 CODE IDENT NO SIZE


    Original     		PDF CO-15263 DOC200103 M55342) M55342 DOC200103 transistor c331 transistor c333 bipolar cots radiation HT-67849 MIL-PRF-55310 OS-68338 MIL-PRF-55310 spec TCXO mtbf M55365

    Untitled

    Abstract: No abstract text available
    Text: REV D DESCRIPTION DATE 11/5/14 CO-24284 PREP HLW APPD DF Specification, Hybrid TCXO Hi-Rel Standard MOUNT HOLLY SPRINGS, PA 17065 THE RECORD OF APPROVAL FOR THIS DOCUMENT IS MAINTAINED ELECTRONICALLY WITHIN THE ERP SYSTEM CODE IDENT NO SIZE 00136 A DWG. NO.


    Original     		PDF CO-24284 DOC200103 M55342 Mil-STD-981.

    3SK59

    Abstract: 3SK59-GR diode jn7 dual 1038 Transistor
    Text: 2/U □ 3 h 3SK SILICON N-CHANNEL DEPLETION DUAL GATE MOS FIELD EFFECT TRANSISTOR O rMfa BF.MIXJI3 , VHF «Jirtlffl Unit in mm PM TUNER,VHF Amplifier Applications. -to AQC&fS&B: < AGCHfKi 'Vi ; 0res = C103pF Typ. &ntTj- ; NF = 2.2 dB (Typ .) C t— 100MHz )


    OCR Scan     		PDF 100MHz 3SK59 3SK59-GR diode jn7 dual 1038 Transistor

    ma40208

    Abstract: MA400 MA40052 MA40268-276
    Text: Chip and Packaged Silicon Schottky Detector Diodes Features • WIDE SELECTION OF PACKAGES FOR STRIPLINE, COAXIAL AND WAVEGUIDE DETECTORS ■ CHIP DIODES AVAILABLE 120 ■ BOTH P AND N TYPE DIODES 276 I ■ EXCELLENT SENSITIVITY THROUGH Ka-BAND ■ LOW 1/f NOISE


    OCR Scan     		PDF

    B 1038 superior

    Abstract: irfp9240
    Text: PD-9.481C International IrâRi Rectifier IRFP9240 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Description


    OCR Scan     		PDF IRFP9240 O-247 O-218 B 1038 superior irfp9240

    CD 1517

    Abstract: IRFP9240
    Text: PD-9.481C International S Rectifier IRFP9240 HEXFET P o w e r M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Description


    OCR Scan     		PDF IRFP9240 -200V O-247 T0-220 O-218 CD 1517 IRFP9240

    Untitled

    Abstract: No abstract text available
    Text: International Rectifier HEXFET Power M O S FE T 465S452 OOlSSSb D71 • INR PD-9.481C IRFP9240 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan     		PDF 465S452 IRFP9240 O-247 T0-220 O-247 QG155bl 150KA

    MA4PK2004

    Abstract: MA4PK3001
    Text: an A M P com pany 2000 Volt and 3000 Volt PIN Diodes MA4PK2000, 3000 KILOVOLT Series V3.00 Features • • • • • • • Voltage Ratings to 3000 Volts 25 Ampere Current Rating Designed for HF, Multi-Kilowatt Switches Low Loss, Low Distortion Design


    OCR Scan     		PDF MA4PK2000, resis30 MA4PK2004 MA4PK3001

    MA4PK2004

    Abstract: LM 072 MA4P diode mri pin switch MA4PK3003 100 mhz hf diode 50 ampere MA4PK3004 MA4PK2000 MA4PK2001 MA4PK2002
    Text: an A M P com pany 2000 Volt and 3000 Volt PIN Diodes MA4PK2000, 3000 KILOVOLT Series V3.00 Features • Voltage Ratings to 3000 Volts • 2 5 Ampere Current Rating • Designed for HF, Multi-Kilowatt Switches • Low Loss, Low Distortion Design • Rugged, Hermetically Sealed Packaging


    OCR Scan     		PDF carrie05 MA4PK3003 MA4PK3004 MA4PK2004 LM 072 MA4P diode mri pin switch MA4PK3003 100 mhz hf diode 50 ampere MA4PK3004 MA4PK2000 MA4PK2001 MA4PK2002

    6-40 UNF

    Abstract: No abstract text available
    Text: M an A M P com pany 2000 Volt and 3000 Volt PIN Diodes MA4PK2000, 3000 KILOVOLT Series V3.00 Features • • • • • • • Voltage Ratings to 3000 Volts 25 Ampere Current Rating D esigned for HF, Multi-Kilowatt Switches Low Loss, Low Distortion Design


    OCR Scan     		PDF MA4PK2000, 6-40 UNF

    d 2331

    Abstract: half adder ic number of half adder ic with full specification vts 7070
    Text: VITESSE SEMICONDUCTOR MflE D VITESSE FEATURES • Superior performance: high speed/low power • Array performance: - D flip-flop toggle rates: >1 GHz - Typical gate delay: 177 ps @ 1.1 mW 2-Input NOR, F.O. = 3 ,1 .5 mm wire - TTL/CM O S inputs/outputs to support up to


    OCR Scan     		PDF T502331 00D0574 LT117A LT117A d 2331 half adder ic number of half adder ic with full specification vts 7070

    FET 3N143

    Abstract: maximum drain voltage of FET 3N143 3n128 air variable capacitor 3N143 RCA-3N128 JV3I transistor 3N128 equivalent RCA Solid State amplifier AN-3193
    Text: G E SOLI] STATE “ 3875081 G E SOLID STATE Di” DE pflTSDfll D D m i a M 2 | l * B“ 01E 14.984 Uj *7-31-«*5“ Small-Signal MOSFETs. .


    OCR Scan     		PDF 3N128, 3N143 3N143 3N128 FET 3N143 maximum drain voltage of FET 3N143 air variable capacitor RCA-3N128 JV3I transistor 3N128 equivalent RCA Solid State amplifier AN-3193